An online diagnostic system for a geothermal generation facility is discloses that includes an automatic steam measurement device for measuring a characteristic of steam to be supplied to a steam turbine from a steam-water separator at the geothermal generation facility that outputs analysis data. A monitor-control device controls an operation of the geothermal generation facility while monitoring the geothermal generation facility. A diagnostic device performs at least one of an evaluation of a steam characteristic at the geothermal generation facility, an evaluation of the steam-water separator, and an evaluation of pulsation and confluence of a production well based on the analysis data from the automatic steam measurement device and performance data of the geothermal generation facility from the monitor-control device. An operating status of the geothermal generation facility is diagnosed.
G06F 15/00 - Digital computers in general; Data processing equipment in general
2.
Integrated control circuit for controlling a switching power supply, switching power supply incorporating the same, and a method of controlling a switching power supply
An integrated control circuit for controlling a switching power supply, a switching power supply incorporating the same, and a method of controlling the switching power supply, where the control IC includes a current comparator that detects current flowing through a switching device, a flip-flop circuit that controls the ON-period of the switching device, an averaging circuit that converts the peak load current value to a time-average, a comparator that detects an overloaded state from the load current, a delay circuit that sets a time from detecting the overcurrent state to stopping the switching operation, a latch circuit that stops the switching operation for a period of time, a first reference voltage supply used in the current comparator, which has a higher voltage value than a second reference voltage supply used in the comparator.
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02H 7/122 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
A yield and productivity of a semiconductor module are improved. A sheet having electrical conductivity is fixed to a main surface of a semiconductor substrate on which a plurality of semiconductor devices having a surface structure and a rear surface electrode are arranged. The semiconductor substrate is divided into semiconductor chips on a first support stage in the state where the sheet is fixed to its main surface. The plurality of divided semiconductor chips are mounted on a second support stage via the sheet and further, the plurality of mounted semiconductor chips are continuously subjected to a dynamic characteristic test on the second support stage. The proposed semiconductor device evaluation method permits a fissure growing and propagating from a crack occurring in the dynamic characteristic test of the vertical semiconductor devices to be suppressed, and the yield and productivity of the semiconductor module to be improved.
A semiconductor device having high reliability and high load short circuit withstand capability while maintaining a low ON resistance is provided, by using a WBG semiconductor as a switching element of an inverter circuit. In the semiconductor device for application to a switching element of an inverter circuit, a band gap of a semiconductor material is wider than that of silicon, a circuit that limits a current when a main transistor is short circuited is provided, and the main transistor that mainly serves to pass a current, a sensing transistor that is connected in parallel to the main transistor and detects a microcurrent proportional to a current flowing in the main transistor, and a lateral MOSFET that controls a gate of the main transistor on the basis of an output of the sensing transistor are formed on the same semiconductor.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
A method of manufacturing a semiconductor device is disclosed, wherein a plating layer is formed on a first surface side of a semiconductor substrate stably and at a low cost, while preventing the plating liquid from being contaminated and avoiding deposition of uneven plating layer on a second surface side. An electrode is formed on the first surface of the semiconductor substrate, and another electrode is formed on the second surface. A curing resin is applied on the electrode on the second surface and a film is stuck on the curing resin, and the curing resin is then cured. After that, a plating process is conducted on the first surface. The film and the curing resin are then peeled off.
The present invention provides a sliding door opening/closing device for a vehicle that applies a sufficient opening/closing drive force to the left and right sliding doors and reduces a force necessary to lock and unlock the latch, despite a simple configuration of the device, and that facilitates the manufacturing process, improves operability and safety, and reduces noise. A lock device, against both sides of which locking portions abut, rotates a columnar permanent magnet so as to form magnetic locking circuits and fixes the locking portions by magnetic forces of the locking magnetic circuits. The rotational operation of the columnar permanent magnet is converted into the downward operation of a latch, and the lowered latch restrains the locking portions with respect to the lock device.
A cooling apparatus for semiconductor chips includes radiation fins formed on the opposite surface of metal base opposite to the surface of metal base, to which an insulator base board mounting semiconductor chips thereon, is disposed. The radiation fins, such as sheet-shaped fins having different lengths are arranged such that the surface area density of the fins becomes higher in the coolant flow direction, whereby the surface area density is the total surface area of radiation fins on a unit surface area of the metal base. As a result, the temperatures of semiconductor chips arranged along the coolant flow direction are closer to each other.
A power factor correction power supply unit for correcting a power factor includes a switching device, an input voltage detection circuit, an output voltage detection circuit, an error amplifier for outputting an error signal obtained by amplifying a difference between an output voltage detection signal and a reference voltage, an ON width generation circuit for generating an ON time width, an OFF width generation circuit for generating an OFF time width of the switching device, and a switching device driving circuit. The drive circuit conducts an ON/OFF control over the switching device upon receiving a turn-on timing signal for turning on the switching device as soon as the OFF time width is terminated and upon receiving a turn-off timing signal for turning off the switching device as soon as the ON time width is terminated.
G05F 1/00 - Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or val
9.
Uninterruptible power supply and method for tripping thereof
Performance failure in an uninterruptible power supply (UPS) is determined independently by itself. A selective tripping can be done within a shorter time than one cycle of an AC output. A UPS converts a DC voltage to an AC voltage and supplies the AC voltage to a load device. A UPS has a control unit conducting a failure determination by using an instantaneous value of an internal voltage and current. It is preferred that a UPS includes an inverter unit and a trip switch. The inverter unit includes a semiconductor bridge circuit generating a sinusoidal AC voltage by modulating a DC voltage with voltage instruction values, and a filter circuit inserted between the semiconductor bridge circuit and the load device. The trip switch connects and trips a connection between the inverter unit and the load device according to the failure determination of the control unit.
H02H 7/00 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm
10.
Uninterruptible power supply and method for selective tripping thereof
UPS performance failure is determined independently by itself. Selective tripping can be done within a shorter time than one cycle of an AC output. A UPS converts a DC voltage to an AC voltage and supplies the AC voltage to a load device. A UPS has a control unit identifying a resistance value of an internal resistance as an internal impedance of the UPS by using an instantaneous value of an internal voltage and current and conducting a failure determination by detecting abnormal fluctuation of the value. It is preferred that an identification of the internal impedance is done through a system identification unit.
A semiconductor device controls a switching power supply. The semiconductor device includes a current inflow terminal; a starter circuit to cause a starting current to flow from the current inflow terminal to a power supply terminal to charge a capacitor externally connected to the power supply terminal; a control unit which controls the starter circuit to turn on to charge the capacitor with the starting current and controls the starter circuit to turn off to perform brown-out detection; a comparator which detects a brown-out state while the starter circuit is turned off; and a brown-out detection unit which receives output signals from the comparator and the control unit as inputs. The brown-out detection is performed while the starter circuit is off, so that the current inflow terminal for the starter circuit is used in common as a voltage detection terminal for detection of the brown-out state.
A semiconductor device for switching power supply control limits the startup current supplied from a high-voltage input terminal, and prevents heat generation and combustion in case of an anomaly. A high-voltage input terminal is connected to the main winding of a transformer, and is supplied with a startup voltage upon input of a power supply to the switching power supply device. A power supply terminal is connected to a capacitor, and outputs a startup current to charge the capacitor after input of the power supply input. A startup circuit is connected between the high-voltage input terminal and the power supply terminal, and charges the capacitor while increasing the startup current with magnitude proportional to the voltage value of the power supply terminal, and after startup, turns off the startup current and supplies the power supply voltage only from the auxiliary winding of the transformer.
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
13.
Semiconductor device and method of producing the same
3, both inclusively. One principal surface of the substrate is irradiated with protons and then heat-treated to thereby form a broad buffer structure, namely a region in a first semiconductor layer where a net impurity doping concentration is locally maximized. Due to the broad buffer structure, lifetime values are substantially equalized in a region extending from an interface between the first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer to the region where the net impurity doping concentration is locally maximized. In addition, the local minimum of lifetime values of the first semiconductor layer becomes high. It is thus possible to provide a semiconductor device having soft recovery characteristics, in addition to high-speed and low-loss characteristics, while suppressing a kinked leakage current waveform.
A semiconductor device includes a resin case, a plurality of external connection terminals fixedly provided on the resin case, and at least one semiconductor element provided in the resin case. At least one terminal block has at least one wiring terminal for electrically connecting the semiconductor element and the external connection terminals.
A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are located on both sides of the above n-type semiconductor layer. A region where a source electrode is in contact with a channel layer is formed over the n-type semiconductor layer. A portion where the high-concentration region is in contact with the channel layer functions as a diode. The breakdown voltage of the diode is set lower than that of the device.
A current-mode switching power supply is provided, in which there is no unstable operation arising from the fact that signals to generate PWM signals are minute, even when a load is light and a switching frequency is high. In a switching power supply of this invention, an added slope signal is superposed in an early stage of a rise of a current detection signal, so that a combined signal Vsig is caused to reach a certain magnitude even when the load is light and the switching frequency is high, and consequently an output FB of an error amplifier ERRAMP which is balanced with the combined signal is also increased. By this means, even in a current mode, it is possible to eliminate unstable operation arising from the fact that the feedback signal FB which is the output of the error amplifier ERRAMP and the combined signal Vsig are minute.
G05F 1/565 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
G05F 1/595 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load semiconductor devices connected in series
17.
Insulating transformer and power conversion device
An insulating transformer includes a semiconductor substrate, an insulating substrate, a primary winding provided on one of the semiconductor substrate and the insulating substrate, a secondary winding provided on other of the semiconductor substrate and the insulating substrate, and an insulating spacer layer provided in between the semiconductor substrate and the insulating substrate for insulating and separating the primary winding and the secondary winding. The primary winding and the secondary winding are disposed to face each other. The insulating spacer layer maintains a constant interval between the semiconductor substrate and the insulating substrate.
A semiconductor device includes a first metal foil, an insulating sheet mounted on an upper surface of the first metal foil main, at least one second metal foil mounted on the insulating sheet, at least one solder layer mounted on the at least one second metal foil, and at least one semiconductor element mounted on the at least one second metal foil through the at least one solder layer. The at least one semiconductor has a thickness of 50 μm or greater and less than 100 μm.
H01L 23/485 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
A door driving apparatus includes a rotary actuator, a rotary transmission member integrally fixed to an output shaft extending from the rotary actuator, and a pair of linear transmission members opposed to each other via the rotary transmission member. The linear transmission members are configured to be in mesh with the rotary transmission member and to move approximately parallel to each other in opposite directions.
A switching power supply has a start-up circuit that includes a field effect transistor (JFET), which has a gate region (a p-type well region) formed in a surface layer of a p-type substrate and a drift region (a first n-type well region). A plurality of source regions (second n-type well regions) are formed circumferentially around the drift region. A drain region (a third n-type well region) is formed centrally of the source region. The drain region and the source regions can be formed at the same time. A metal wiring of the source electrode wiring connected to source regions is divided into at least two groups to form at least two junction field effect transistors.
H01L 31/112 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor
A semiconductor device is discloses that includes an n-type semiconductor substrate; an alternating conductivity type layer on semiconductor substrate, the alternating conductivity type layer including n-type drift regions and p-type partition regions arranged alternately; p-type channel regions on the alternating conductivity type layer; and trenches formed from the surfaces of the p-type channel regions down to respective n-type drift regions. The bottom of each trench is over the pn-junction between the p-type partition region and the n-type drift region. The semiconductor device facilitates preventing the on-resistance from increasing, obtaining a higher breakdown voltage, and reducing the variations caused in the characteristics thereof.
patents
