Femtometrix, Inc.

United States of America

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IPC Class
G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited 26
H01L 21/66 - Testing or measuring during manufacture or treatment 21
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined 18
G01N 21/88 - Investigating the presence of flaws, defects or contamination 14
G01R 29/24 - Arrangements for measuring quantities of charge 13
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Status
Pending 14
Registered / In Force 26

1.

APPARATUS AND METHOD OF INCREASING PRECISION CONTROL OF CHARGE DEPOSITION ONTO A SEMICONDUCTOR WAFER SUBSTRATE

      
Application Number 18350250
Status Pending
Filing Date 2023-07-11
First Publication Date 2024-03-21
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Shtykov, Anatoly A.
  • Wong, Timothy M.

Abstract

The present invention relates to corona charge deposition systems that use High Voltage (HV) amplifiers for precisely controlling corona charge deposition. Some implementations, provide a corona charge deposition system that uses multiple voltage sources to maintain specified voltages applied on several electrodes to precisely control the corona current required to deposit a desired amount of charge on a sample. The HV amplifiers are able to source and sink currents to maintain stable voltages applied on control electrodes in the presence of a higher voltage applied on a needle electrode. The proposed apparatus and method of monitoring multiple signals, controlling multiple voltages, and predicting charge profile deposited on a sample can precisely control charge deposition processes.

IPC Classes  ?

2.

METHOD AND APPARATUS FOR NON-INVASIVE, NON-INTRUSIVE, AND UN-GROUNDED, SIMULTANEOUS CORONA DEPOSITION AND SHG MEASUREMENTS

      
Application Number 18350249
Status Pending
Filing Date 2023-07-11
First Publication Date 2024-03-14
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Wong, Timothy M.
  • Howland, William H.

Abstract

Apparatus is described for performing simultaneous corona deposition and surface electric field induced second harmonic (EFISH) measurements. Example designs include systems including corona guns having a focus tube for deposition of corona charge with windows therein for passage of a laser beam incident on and reflected from a sample surface. Various designs may also employ masks proximal the distal end of the focusing tube and/or proximal the sample surface. In some implementations, the apparatus is used to make ungrounded and therefore non-invasive measurements, for example, on dielectric on semiconductor such as, e.g., interface state density (Dit), flatband voltage (Vfb) and/or lifetime measurements.

IPC Classes  ?

3.

METHOD AND APPARATUS FOR MAIN DETECTOR SYNCHRONIZATION OF OPTICALLY BASED SECOND HARMONIC GENERATION MEASUREMENTS

      
Application Number US2023073564
Publication Number 2024/054856
Status In Force
Filing Date 2023-09-06
Publication Date 2024-03-14
Owner FEMTOMETRIX, INC. (USA)
Inventor
  • Shtykov, Anatoly A.
  • Orozco, Michael Brandon

Abstract

oo) involves accurate temporal alignment between optical excitation and detection of the resulting SHG signal. Various disclosed systems and methods use high-speed Pockels Cell (PC) for controlling incident light, and precision electronics for synchronization.

IPC Classes  ?

  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01R 29/24 - Arrangements for measuring quantities of charge
  • H01L 21/66 - Testing or measuring during manufacture or treatment

4.

METHOD AND APPARATUS FOR MAIN DETECTOR SYNCHRONIZATION OF OPTICALLY BASED SECOND HARMONIC GENERATION MEASUREMENTS

      
Application Number 18462073
Status Pending
Filing Date 2023-09-06
First Publication Date 2024-03-14
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Shtykov, Anatoly A.
  • Orozco, Michael Brandon

Abstract

Methods are disclosed for improving one or more of jitter/timing, signal-to-noise ratio, signal integrity, stability, and repeatability of generation and measurement of Second Harmonic Generation (SHG) signals generated by a sample upon illumination by a light beam. The method may use precision hardware to control the generation of SHG signal and synchronize it with the optical detection process to improve the reliability and accuracy of measured SHG signals. A precise measurement of the initial SHG signal (Io) involves accurate temporal alignment between optical excitation and detection of the resulting SHG signal. Various disclosed systems and methods use high-speed Pockels Cell (PC) for controlling incident light, and precision electronics for synchronization.

IPC Classes  ?

  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited

5.

METHOD AND APPARATUS FOR SEPARATION OF THE SECOND HARMONIC GENERATION COMPONENTS, THROUGH VARIATION IN THE INPUT PROBING LASER POLARIZATION

      
Application Number 18462208
Status Pending
Filing Date 2023-09-06
First Publication Date 2024-03-14
Owner FemtoMetrix, Inc. (USA)
Inventor Wong, Timothy M.

Abstract

When a high intensity Second Harmonic Signal (SHG) probing laser is incident on a wafer surface under test, the SHG response is generally the combination of a few components: contributions from interfaces between material types (e.g., the semiconductor/dielectric interface), contributions from material non-centrosymmetric bulk regions, and/or contribution from the electric field near material interfaces. To separate the various components, SHG measurements can be performed as a function of the input probing laser polarization. Described herein are methods of acquiring an SHG versus polarization curve in a manner to expedite the measurement time.

IPC Classes  ?

  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/21 - Polarisation-affecting properties
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G02F 1/37 - Non-linear optics for second-harmonic generation

6.

METHOD AND APPARATUS FOR SEPARATION OF THE SECOND HARMONIC GENERATION COMPONENTS, THROUGH VARIATION IN THE INPUT PROBING LASER POLARIZATION

      
Application Number US2023073482
Publication Number 2024/054802
Status In Force
Filing Date 2023-09-05
Publication Date 2024-03-14
Owner FEMTOMETRIX, INC. (USA)
Inventor Wong, Timothy M.

Abstract

When a high intensity Second Harmonic Signal (SHG) probing laser is incident on a wafer surface under test, the SHG response is generally the combination of a few components: contributions from interfaces between material types (e.g., the semiconductor/dielectric interface), contributions from material non-centrosymmetric bulk regions, and/or contribution from the electric field near material interfaces. To separate the various components, SHG measurements can be performed as a function of the input probing laser polarization. Described herein are methods of acquiring an SHG versus polarization curve in a manner to expedite the measurement time.

IPC Classes  ?

  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N 21/21 - Polarisation-affecting properties
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer
  • G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

7.

DIMENSIONAL METROLOGY USING NON-LINEAR OPTICS

      
Application Number 18335485
Status Pending
Filing Date 2023-06-15
First Publication Date 2024-03-07
Owner FemtoMetrix, Inc. (USA)
Inventor Adler, David L.

Abstract

Systems and methods are disclosed for using second-harmonic generation of light to monitor the manufacturing process for changes that can affect the performance or yield of produced devices and/or determining critical dimensions of the produced device.

IPC Classes  ?

  • G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
  • H01L 21/66 - Testing or measuring during manufacture or treatment

8.

METHOD AND APPARATUS FOR NON-INVASIVE SEMICONDUCTOR TECHNIQUE FOR MEASURING DIELECTRIC/SEMICONDUCTOR INTERFACE TRAP DENSITY USING SCANNING ELECTRON MICROSCOPE CHARGING

      
Application Number 18350643
Status Pending
Filing Date 2023-07-11
First Publication Date 2024-02-29
Owner FemtoMetrix, Inc. (USA)
Inventor Wong, Timothy M.

Abstract

A non-invasive semiconductor technique for measuring dielectric/semiconductor interface trap density can be performed by charging the dielectric by creating charges on the top surface of the dielectric layer over the wafer using Scanning Electron Microscope (SEM) charging. This charging can induce an accumulated, a depleted and/or an inverted semiconductor surface. The states of the semiconductor surface can subsequently be measured, identified, and/or quantified using Electric Field Induced Second Harmonic generation (EFISH). From the measured/acquired EFISH versus SEM charge curve, the interface state density (Dit) can be extracted. A large working distance provides the ability to create charge and measure the Second Harmonic Generation (SHG) at the same semiconductor surface spot without the needing to move the wafer.

IPC Classes  ?

  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof - Details
  • H01J 37/22 - Optical or photographic arrangements associated with the tube
  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

9.

METHOD AND APPARATUS FOR NON-INVASIVE SEMICONDUCTOR TECHNIQUE FOR MEASURING DIELECTRIC/SEMICONDUCTOR INTERFACE TRAP DENSITY USING SCANNING ELECTRON MICROSCOPE CHARGING

      
Application Number US2023069967
Publication Number 2024/015795
Status In Force
Filing Date 2023-07-11
Publication Date 2024-01-18
Owner FEMTOMETRIX, INC. (USA)
Inventor Wong, Timothy M.

Abstract

itit) can be extracted. A large working distance provides the ability to create charge and measure the Second Harmonic Generation (SHG) at the same semiconductor surface spot without the needing to move the wafer.

IPC Classes  ?

  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
  • H01L 21/66 - Testing or measuring during manufacture or treatment

10.

Surface Sensing Systems and Methods for Imaging a Scanned Surface of a Sample Via Sum-Frequency Vibrational Spectroscopy

      
Application Number 18476919
Status Pending
Filing Date 2023-09-28
First Publication Date 2024-01-18
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Hunt, Jeffrey H.
  • Shi, Jianing
  • Changala, John Paul

Abstract

Surface sensing methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy are disclosed herein. The methods include exposing a sampled location of the scanned surface to a visible light beam and exposing the sampled location to a tunable infrared beam such that the tunable infrared beam is at least partially coincident with the visible light beam. The methods also include varying a frequency of the tunable infrared beam an inducing optical resonance within an imaged structure that extends at least partially within the sampled location. The methods further include receiving at least a portion of an emitted light beam from the sampled location and scanning the visible light beam and the runnable infrared beam across the scanned portion of the scanned surface. The methods also include generating an image of the scanned portion of the scanned surface based upon the receiving and the scanning.

IPC Classes  ?

  • G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
  • G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
  • G01J 3/44 - Raman spectrometry; Scattering spectrometry
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N 21/65 - Raman scattering

11.

METHOD AND APPARATUS FOR NON-INVASIVE, NON-INTRUSIVE, AND UNGROUNDED, SIMULTANEOUS CORONA DEPOSITION AND SHG MEASUREMENTS

      
Application Number US2023069948
Publication Number 2024/015777
Status In Force
Filing Date 2023-07-11
Publication Date 2024-01-18
Owner FEMTOMETRIX, INC. (USA)
Inventor
  • Wong, Timothy M.
  • Howland, William H.

Abstract

itfbfb) and/or lifetime measurements.

IPC Classes  ?

  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N 21/67 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using electric arcs or discharges
  • G01R 29/24 - Arrangements for measuring quantities of charge
  • H01L 21/66 - Testing or measuring during manufacture or treatment

12.

APPARATUS AND METHOD OF INCREASING PRECISION CONTROL OF CHARGE DEPOSITION ONTO A SEMICONDUCTOR WAFER SUBSTRATE

      
Application Number US2023069955
Publication Number 2024/015784
Status In Force
Filing Date 2023-07-11
Publication Date 2024-01-18
Owner FEMTOMETRIX, INC. (USA)
Inventor
  • Shtykov, Anatoly A.
  • Wong, Timothy M.

Abstract

The present invention relates to corona charge deposition systems that use High Voltage (HV) amplifiers for precisely controlling corona charge deposition. Some implementations, provide a corona charge deposition system that uses multiple voltage sources to maintain specified voltages applied on several electrodes to precisely control the corona current required to deposit a desired amount of charge on a sample. The HV amplifiers are able to source and sink currents to maintain stable voltages applied on control electrodes in the presence of a higher voltage applied on a needle electrode. The proposed apparatus and method of monitoring multiple signals, controlling multiple voltages, and predicting charge profile deposited on a sample can precisely control charge deposition processes.

IPC Classes  ?

  • H01T 19/04 - Devices providing for corona discharge having pointed electrodes
  • H01J 37/32 - Gas-filled discharge tubes
  • H01J 49/16 - Ion sources; Ion guns using surface ionisation, e.g. field-, thermionic- or photo-emission

13.

DIMENSIONAL METROLOGY USING NON-LINEAR OPTICS

      
Application Number US2023068381
Publication Number 2023/245019
Status In Force
Filing Date 2023-06-13
Publication Date 2023-12-21
Owner FEMTOMETRIX, INC. (USA)
Inventor Adler, David L.

Abstract

Systems and methods are disclosed for using second-harmonic generation of light to monitor the manufacturing process for changes that can affect the performance or yield of produced devices and/or determining critical dimensions of the produced device.

IPC Classes  ?

  • G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
  • G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
  • G01N 21/65 - Raman scattering
  • G01N 21/67 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using electric arcs or discharges

14.

Surface sensing systems and methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy

      
Application Number 17942813
Grant Number 11808563
Status In Force
Filing Date 2022-09-12
First Publication Date 2023-01-05
Grant Date 2023-11-07
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Hunt, Jeffrey H.
  • Shi, Jianing
  • Changala, John Paul

Abstract

Surface sensing methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy are disclosed herein. The methods include exposing a sampled location of the scanned surface to a visible light beam and exposing the sampled location to a tunable infrared beam such that the tunable infrared beam is at least partially coincident with the visible light beam. The methods also include varying a frequency of the tunable infrared beam an inducing optical resonance within an imaged structure that extends at least partially within the sampled location. The methods further include receiving at least a portion of an emitted light beam from the sampled location and scanning the visible light beam and the runnable infrared beam across the scanned portion of the scanned surface. The methods also include generating an image of the scanned portion of the scanned surface based upon the receiving and the scanning.

IPC Classes  ?

  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
  • G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
  • G01J 3/44 - Raman spectrometry; Scattering spectrometry
  • G01N 21/65 - Raman scattering

15.

WAFER METROLOGY TECHNOLOGIES

      
Application Number 17667404
Status Pending
Filing Date 2022-02-08
First Publication Date 2022-12-29
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc
  • Changala, John

Abstract

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.

IPC Classes  ?

  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/94 - Investigating contamination, e.g. dust
  • G01R 31/265 - Contactless testing
  • G01R 31/26 - Testing of individual semiconductor devices
  • G01N 27/00 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
  • G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer

16.

SECOND-HARMONIC GENERATION FOR CRITICAL DIMENSIONAL METROLOGY

      
Application Number 17743284
Status Pending
Filing Date 2022-05-12
First Publication Date 2022-11-17
Owner FemtoMetrix, Inc. (USA)
Inventor Adler, David L.

Abstract

Systems and methods are disclosed for using second-harmonic generation of light to monitor the manufacturing process for changes that can affect the performance or yield of produced devices and/or determining critical dimensions of the produced device.

IPC Classes  ?

  • G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures

17.

SECOND-HARMONIC GENERATION FOR CRITICAL DIMENSIONAL METROLOGY

      
Application Number US2022029031
Publication Number 2022/241141
Status In Force
Filing Date 2022-05-12
Publication Date 2022-11-17
Owner FEMTOMETRIX, INC. (USA)
Inventor Adler, David L.

Abstract

Systems and methods are disclosed for using second-harmonic generation of light to monitor the manufacturing process for changes that can affect the performance or yield of produced devices and/or determining critical dimensions of the produced device.

IPC Classes  ?

  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/94 - Investigating contamination, e.g. dust
  • G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
  • G02F 1/37 - Non-linear optics for second-harmonic generation
  • H01L 21/66 - Testing or measuring during manufacture or treatment

18.

SYSTEMS FOR PARSING MATERIAL PROPERTIES FROM WITHIN SHG SIGNALS

      
Application Number 17454759
Status Pending
Filing Date 2021-11-12
First Publication Date 2022-10-06
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc Christopher
  • Changala, John Paul
  • Shi, Jianing

Abstract

Semiconductor metrology systems based on directing radiation on a wafer, detecting second harmonic generated (SHG) radiation from the wafer and correlating the second harmonic generated (SHG) signal to one or more electrical properties of the wafer are disclosed. The disclosure also includes parsing the SHG signal to remove contribution to the SHG signal from one or more material properties of the sample such as thickness. Systems and methods described herein include machine learning methodologies to automatically classify obtained SHG signal

IPC Classes  ?

  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • H01L 21/66 - Testing or measuring during manufacture or treatment

19.

Pump and probe type second harmonic generation metrology

      
Application Number 17449077
Grant Number 11821911
Status In Force
Filing Date 2021-09-27
First Publication Date 2022-08-18
Grant Date 2023-11-21
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc
  • Changala, John

Abstract

Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.

IPC Classes  ?

  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/94 - Investigating contamination, e.g. dust
  • G01R 31/265 - Contactless testing
  • G01R 31/26 - Testing of individual semiconductor devices
  • G01N 27/00 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
  • G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer

20.

HARMONIC F3X

      
Serial Number 97295162
Status Pending
Filing Date 2022-03-04
Owner FEMTOMETRIX, INC. ()
NICE Classes  ? 09 - Scientific and electric apparatus and instruments

Goods & Services

Optical frequency metrology devices

21.

Surface sensing systems and methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy

      
Application Number 17146192
Grant Number 11473903
Status In Force
Filing Date 2021-01-11
First Publication Date 2021-05-06
Grant Date 2022-10-18
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Hunt, Jeffrey H.
  • Shi, Jianing
  • Changala, John Paul

Abstract

Surface sensing methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy are disclosed herein. The methods include exposing a sampled location of the scanned surface to a visible light beam and exposing the sampled location to a tunable infrared beam such that the tunable infrared beam is at least partially coincident with the visible light beam. The methods also include varying a frequency of the tunable infrared beam an inducing optical resonance within an imaged structure that extends at least partially within the sampled location. The methods further include receiving at least a portion of an emitted light beam from the sampled location and scanning the visible light beam and the runnable infrared beam across the scanned portion of the scanned surface. The methods also include generating an image of the scanned portion of the scanned surface based upon the receiving and the scanning.

IPC Classes  ?

  • G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
  • G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
  • G01J 3/44 - Raman spectrometry; Scattering spectrometry
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N 21/65 - Raman scattering

22.

Pump and probe type second harmonic generation metrology

      
Application Number 16841324
Grant Number 11150287
Status In Force
Filing Date 2020-04-06
First Publication Date 2021-02-25
Grant Date 2021-10-19
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc
  • Changala, John

Abstract

Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.

IPC Classes  ?

  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
  • G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/94 - Investigating contamination, e.g. dust
  • G01R 31/265 - Contactless testing
  • G01R 31/26 - Testing of individual semiconductor devices
  • G01N 27/00 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
  • H01L 21/66 - Testing or measuring during manufacture or treatment

23.

Systems for parsing material properties from within SHG signals

      
Application Number 16724042
Grant Number 11199507
Status In Force
Filing Date 2019-12-20
First Publication Date 2020-12-31
Grant Date 2021-12-14
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc Christopher
  • Changala, John Paul
  • Shi, Jianing

Abstract

Semiconductor metrology systems based on directing radiation on a wafer, detecting second harmonic generated (SHG) radiation from the wafer and correlating the second harmonic generated (SHG) signal to one or more electrical properties of the wafer are disclosed. The disclosure also includes parsing the SHG signal to remove contribution to the SHG signal from one or more material properties of the sample such as thickness. Systems and methods described herein include machine learning methodologies to automatically classify obtained SHG signal.

IPC Classes  ?

  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • H01L 21/66 - Testing or measuring during manufacture or treatment

24.

Wafer metrology technologies

      
Application Number 16773693
Grant Number 11293965
Status In Force
Filing Date 2020-01-27
First Publication Date 2020-12-24
Grant Date 2022-04-05
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc
  • Changala, John

Abstract

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.

IPC Classes  ?

  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/94 - Investigating contamination, e.g. dust
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01R 31/265 - Contactless testing
  • G01R 31/26 - Testing of individual semiconductor devices
  • G01N 27/00 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
  • G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer

25.

Field-biased second harmonic generation metrology

      
Application Number 16703709
Grant Number 11415617
Status In Force
Filing Date 2019-12-04
First Publication Date 2020-11-05
Grant Date 2022-08-16
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc
  • Changala, John

Abstract

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.

IPC Classes  ?

  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/94 - Investigating contamination, e.g. dust
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 27/00 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • G01R 31/26 - Testing of individual semiconductor devices
  • G01R 31/265 - Contactless testing
  • G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer
  • G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

26.

SYSTEMS AND METHODS FOR DETERMINING CHARACTERISTICS OF SEMICONDUCTOR DEVICES

      
Application Number 16396455
Status Pending
Filing Date 2019-04-26
First Publication Date 2020-03-19
Owner FemtoMetrix, Inc. (USA)
Inventor Lei, Ming

Abstract

Second Harmonic Generation (SHG) can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. In some instances, SHG is used to evaluate an interfacial region such as between metal and oxide. Various parameters such as input polarization, output polarization, and azimuthal angle of incident beam, may affect the SHG signal. Accordingly, such parameters are varied for different types of patterns on the wafer. SHG metrology on various test structures may also assist in characterizing a sample.

IPC Classes  ?

  • G01R 31/265 - Contactless testing
  • G01R 31/26 - Testing of individual semiconductor devices
  • H01L 21/66 - Testing or measuring during manufacture or treatment

27.

FIELD-BIASED NONLINEAR OPTICAL METROLOGY USING CORONA DISCHARGE SOURCE

      
Application Number 16396227
Status Pending
Filing Date 2019-04-26
First Publication Date 2020-02-20
Owner
  • SK hynix Inc. (Republic of Korea)
  • FemtoMetrix, Inc. (USA)
Inventor
  • Ma, Seongmin
  • Kim, Sangmin
  • Cho, Jonghoi
  • Lei, Ming

Abstract

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation while other utilize four wave-mixing or multi-wave mixing. Corona discharge may be applied to the sample to provide additional information. Some approaches involve determining current flow from a sample illuminated with radiation.

IPC Classes  ?

  • G01R 31/265 - Contactless testing
  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01R 31/26 - Testing of individual semiconductor devices
  • G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer
  • G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

28.

SECOND HARMONIC GENERATION (SHG) OPTICAL INSPECTION SYSTEM DESIGNS

      
Application Number US2019032282
Publication Number 2019/222260
Status In Force
Filing Date 2019-05-14
Publication Date 2019-11-21
Owner FEMTOMETRIX, INC. (USA)
Inventor Lei, Ming

Abstract

Second Harmonic Generation (SHG) can be used to interrogate a surface of a sample such as a layered semiconductor structure. The SHG based sample interrogation systems may simultaneously collect different polarization components of the SHG signal at a time to provide different types of information. SHG imaging systems can provide SHG images or maps of the distribution of SHG signals over a larger area of a sample. Some such SHG imaging systems employ multiple beams and multiple detectors to capture SHG signals over an area of the sample. Some SHG imaging systems employ imaging optics to image the sample onto a detector array to form SHG images.

IPC Classes  ?

  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/01 - Arrangements or apparatus for facilitating the optical investigation

29.

FIELD-BIASED NONLINEAR OPTICAL METROLOGY USING CORONA DISCHARGE SOURCE

      
Application Number US2019029439
Publication Number 2019/210229
Status In Force
Filing Date 2019-04-26
Publication Date 2019-10-31
Owner
  • SK HYNIX INC. (Republic of Korea)
  • FEMTOMETRIX, INC. (USA)
Inventor
  • Ma, Seongmin
  • Kim, Sangmin
  • Cho, Jonghoi
  • Lei, Ming

Abstract

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation while other utilize four wave-mixing or multi-wave mixing. Corona discharge may be applied to the sample to provide additional information. Some approaches involve determining current flow from a sample illuminated with radiation.

IPC Classes  ?

  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • H01L 21/66 - Testing or measuring during manufacture or treatment

30.

SYSTEMS AND METHODS FOR DETERMINING CHARACTERISTICS OF SEMICONDUCTOR DEVICES

      
Application Number US2019029485
Publication Number 2019/210265
Status In Force
Filing Date 2019-04-26
Publication Date 2019-10-31
Owner FEMTOMETRIX, INC. (USA)
Inventor Lei, Ming

Abstract

Second Harmonic Generation (SHG) can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. In some instances, SHG is used to evaluate an interfacial region such as between metal and oxide. Various parameters such as input polarization, output polarization, and azimuthal angle of incident beam, may affect the SHG signal. Accordingly, such parameters are varied for different types of patterns on the wafer. SHG metrology on various test structures may also assist in characterizing a sample.

IPC Classes  ?

  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

31.

Surface sensing systems and methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy

      
Application Number 16352569
Grant Number 10928188
Status In Force
Filing Date 2019-03-13
First Publication Date 2019-07-11
Grant Date 2021-02-23
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Hunt, Jeffrey H.
  • Shi, Jianing
  • Changala, John Paul

Abstract

Surface sensing methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy are disclosed herein. The methods include exposing a sampled location of the scanned surface to a visible light beam and exposing the sampled location to a tunable infrared beam such that the tunable infrared beam is at least partially coincident with the visible light beam. The methods also include varying a frequency of the tunable infrared beam an inducing optical resonance within an imaged structure that extends at least partially within the sampled location. The methods further include receiving at least a portion of an emitted light beam from the sampled location and scanning the visible light beam and the runnable infrared beam across the scanned portion of the scanned surface. The methods also include generating an image of the scanned portion of the scanned surface based upon the receiving and the scanning.

IPC Classes  ?

  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
  • G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
  • G01J 3/44 - Raman spectrometry; Scattering spectrometry
  • G01N 21/65 - Raman scattering

32.

Pump and probe type second harmonic generation metrology

      
Application Number 15882433
Grant Number 10613131
Status In Force
Filing Date 2018-01-29
First Publication Date 2018-10-18
Grant Date 2020-04-07
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc
  • Changala, John

Abstract

Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.

IPC Classes  ?

  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/94 - Investigating contamination, e.g. dust
  • G01R 31/265 - Contactless testing
  • G01R 31/26 - Testing of individual semiconductor devices
  • G01N 27/00 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
  • G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer

33.

Field-biased second harmonic generation metrology

      
Application Number 15799594
Grant Number 10663504
Status In Force
Filing Date 2017-10-31
First Publication Date 2018-08-02
Grant Date 2020-05-26
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc
  • Changala, John

Abstract

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.

IPC Classes  ?

  • G01R 31/26 - Testing of individual semiconductor devices
  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/94 - Investigating contamination, e.g. dust
  • G01R 31/265 - Contactless testing
  • G01N 27/00 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
  • G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer

34.

Wafer metrology technologies

      
Application Number 15806271
Grant Number 10591525
Status In Force
Filing Date 2017-11-07
First Publication Date 2018-08-02
Grant Date 2020-03-17
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc
  • Changala, John

Abstract

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.

IPC Classes  ?

  • G01R 29/24 - Arrangements for measuring quantities of charge
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/94 - Investigating contamination, e.g. dust
  • G01R 31/265 - Contactless testing
  • G01R 31/26 - Testing of individual semiconductor devices
  • G01N 27/00 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited

35.

Surface sensing systems and methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy

      
Application Number 15388743
Grant Number 10274310
Status In Force
Filing Date 2016-12-22
First Publication Date 2018-06-28
Grant Date 2019-04-30
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Hunt, Jeffrey H.
  • Shi, Jianing
  • Changala, John Paul

Abstract

Surface sensing systems and methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy are disclosed herein. The systems include a sample holder, a visible light source configured to direct a visible light beam incident upon a sampled location of the scanned surface and a tunable IR source configured to direct a tunable IR beam coincident with the visible light beam upon the sampled location. The systems also include a scanning structure configured to scan the visible light beam and the tunable IR beam across the scanned surface, and a light filter configured to receive an emitted beam from the scanned surface and to filter the emitted beam to generate a filtered light beam. The systems further include a light detection system configured to receive the filtered light beam, and an alignment structure. The methods include methods of operating the systems.

IPC Classes  ?

  • G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
  • G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
  • G01J 3/44 - Raman spectrometry; Scattering spectrometry
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N 21/65 - Raman scattering

36.

SURFACE SENSING SYSTEMS AND METHODS FOR IMAGING A SCANNED SURFACE OF A SAMPLE VIA SUM-FREQUENCY VIBRATIONAL SPECTROSCOPY

      
Document Number 03047731
Status Pending
Filing Date 2017-12-18
Open to Public Date 2018-06-28
Owner
  • THE BOEING COMPANY (USA)
  • FEMTOMETRIX, INC. (USA)
Inventor
  • Hunt, Jeffrey H.
  • Shi, Jianing
  • Changala, John Paul

Abstract

Surface sensing systems and methods for imaging a scanned surface (32) of a sample (30) via sum-frequency vibrational spectroscopy are disclosed herein. The systems include a sample holder (20), a visible light source (40) configured to direct a visible light beam (42) incident upon a sampled location (34) of the scanned surface (32) and a tunable IR source (50) configured to direct a tunable IR beam (52) coincident with the visible light beam (42) upon the sampled location (34). The systems also include a scanning structure (60) configured to scan the visible light beam (42) and the tunable IR beam (52) across the scanned surface (32), and a light filter (70) configured to receive an emitted beam (38) from the scanned surface (32) and to filter the emitted beam (38) to generate a filtered light beam (72). The systems further include a light detection system (80) configured to receive the filtered light beam (72), and an alignment structure (90). The methods include methods of operating the systems.

IPC Classes  ?

  • G01N 21/65 - Raman scattering
  • G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited

37.

SURFACE SENSING SYSTEMS AND METHODS FOR IMAGING A SCANNED SURFACE OF A SAMPLE VIA SUM-FREQUENCY VIBRATIONAL SPECTROSCOPY

      
Application Number US2017067028
Publication Number 2018/118779
Status In Force
Filing Date 2017-12-18
Publication Date 2018-06-28
Owner
  • THE BOEING COMPANY (USA)
  • FEMTOMETRIX, INC. (USA)
Inventor
  • Hunt, Jeffrey, H.
  • Shi, Jianing
  • Changala, John, Paul

Abstract

Surface sensing systems and methods for imaging a scanned surface (32) of a sample (30) via sum-frequency vibrational spectroscopy are disclosed herein. The systems include a sample holder (20), a visible light source (40) configured to direct a visible light beam (42) incident upon a sampled location (34) of the scanned surface (32) and a tunable IR source (50) configured to direct a tunable IR beam (52) coincident with the visible light beam (42) upon the sampled location (34). The systems also include a scanning structure (60) configured to scan the visible light beam (42) and the tunable IR beam (52) across the scanned surface (32), and a light filter (70) configured to receive an emitted beam (38) from the scanned surface (32) and to filter the emitted beam (38) to generate a filtered light beam (72). The systems further include a light detection system (80) configured to receive the filtered light beam (72), and an alignment structure (90). The methods include methods of operating the systems.

IPC Classes  ?

  • G01N 21/65 - Raman scattering
  • G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
  • G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited

38.

SYSTEMS FOR PARSING MATERIAL PROPERTIES FROM WITHIN SHG SIGNALS

      
Application Number US2015060437
Publication Number 2016/077617
Status In Force
Filing Date 2015-11-12
Publication Date 2016-05-19
Owner FEMTOMETRIX, INC. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc, Christopher
  • Changala, John, Paul
  • Shi, Jianing

Abstract

Semiconductor metrology systems based on directing radiation on a wafer, detecting second harmonic generated (SHG) radiation from the wafer and correlating the second harmonic generated (SHG) signal to one or more electrical properties of the wafer are disclosed. The disclosure also includes parsing the SHG signal to remove contribution to the SHG signal from one or more material properties of the sample such as thickness. Systems and methods described herein include machine learning methodologies to automatically classify obtained SHG signal data from the wafer based on an electrical property of the wafer.

IPC Classes  ?

  • H01L 21/66 - Testing or measuring during manufacture or treatment

39.

Systems for parsing material properties from within SHG signals

      
Application Number 14939750
Grant Number 10551325
Status In Force
Filing Date 2015-11-12
First Publication Date 2016-05-12
Grant Date 2020-02-04
Owner FemtoMetrix, Inc. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc Christopher
  • Changala, John Paul
  • Shi, Jianing

Abstract

Semiconductor metrology systems based on directing radiation on a wafer, detecting second harmonic generated (SHG) radiation from the wafer and correlating the second harmonic generated (SHG) signal to one or more electrical properties of the wafer are disclosed. The disclosure also includes parsing the SHG signal to remove contribution to the SHG signal from one or more material properties of the sample such as thickness. Systems and methods described herein include machine learning methodologies to automatically classify obtained SHG signal data from the wafer based on an electrical property of the wafer.

IPC Classes  ?

  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined

40.

WAFER METROLOGY TECHNOLOGIES

      
Application Number US2015026263
Publication Number 2015/161136
Status In Force
Filing Date 2015-04-16
Publication Date 2015-10-22
Owner FEMTOMETRIX, INC. (USA)
Inventor
  • Koldiaev, Viktor
  • Kryger, Marc
  • Changala, John

Abstract

Various approached to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approached employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.

IPC Classes  ?

  • H01L 21/66 - Testing or measuring during manufacture or treatment