Abstract

According to the embodiment, an HDC receives a plurality of data segments from a host, and executes generation and addition of a first code and output of a data segment to which the first code is added to each data segment. An HDC calculates exclusive OR with respect to the first codes, and outputs obtained first information. The RWC performs data conversion and calculation of exclusive OR on the plurality of data segments to which the first code is added, and outputs the plurality of data segments after the data conversion and a track parity obtained by the calculation of the exclusive OR. The RWC acquires the first code from the plurality of data segments. The RWC calculates exclusive OR with respect to a group of the second codes which are the acquired first codes to acquire second information. The RWC compares the first information with the second information.

IPC Classes  ?

• G11B 20/00 - Signal processing not specific to the method of recording or reproducing; Circuits therefor
• G11B 5/09 - Digital recording
• G11B 19/04 - Arrangements for preventing, inhibiting, or warning against, double recording on the same blank, or against other recording or reproducing malfunctions
• G11B 20/12 - Formatting, e.g. arrangement of data block or words on the record carriers
• G11B 20/18 - Error detection or correction; Testing

Abstract

According to one embodiment, an antenna tuning IC includes a power level detection circuit, a signal level determination circuit, and a consumption current control circuit. The power level detection circuit detects a power level of an antenna line through which a high-frequency signal received by an antenna is transmitted. The signal level determination circuit determines a signal level detected by the power level detection circuit. The consumption current control circuit generates a switch gate control signal for controlling an ON/OFF operation of an RF switch circuitry, and reduces a first consumption current generated when the power level is a low input voltage more than a second consumption current generated when the power level is a high input voltage based on a determination result of the signal level determination circuit.

IPC Classes  ?

• H04B 1/44 - Transmit/receive switching
• H01Q 3/24 - Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the orientation by switching energy from one active radiating element to another, e.g. for beam switching

Abstract

The gas-circuit-breaker includes a container, opposing part, movable-part, and nozzle. An arc-extinguishing gas fills the container. The opposing-part is housed in the container and includes an opposing-arc-contact and an exhaust stack. The movable-part is housed in the container and includes a movable-arc-contact coming in contact with the opposing-arc-contact in a connected-state and separating from the opposing-arc-contact in an open-state; and a pressure-accumulation-part where an arc-extinguishing gas pressure increases. The nozzle is housed in the container and includes a space where arc-discharge occurs between the movable-arc-contact and the opposing-arc-contact. The nozzle includes a middle-part where the opposing-arc-contact is inserted and one or more jet-holes that eject, toward the space, partial arc-extinguishing gas flowing in from a flow-passage between the pressure-accumulation-part and the middle-part. The arc-extinguishing gas whose pressure increases in the pressure-accumulation-part flows into the space via the flow-passage and the jet-holes to extinguish the arc-discharge.

IPC Classes  ?

• H01H 33/91 - Switches with separate means for directing, obtaining, or increasing flow of arc-extinguishing fluid the flow of arc-extinguishing fluid being produced or increased by movement of pistons or other pressure-producing parts this movement being effected by, or in conjunction with, the contact-operating mechanism the arc-extinguishing fluid being air or gas
• H01H 33/56 - Gas reservoirs

Abstract

According to one embodiment, a power conversion device includes: a plurality of DC-DC converter circuits configured to generate AC voltages at both ends of a plurality of first inductors by switching on a DC voltage and rectifies the AC voltages to output DC voltages; and a plurality of second inductors respectively magnetically coupled to the plurality of first inductors of the plurality of DC-DC converter circuits, wherein inputs and outputs of the plurality of DC-DC converter circuits are respectively connected in series and the plurality of second inductors are connected in parallel between two nodes.

IPC Classes  ?

• H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion

Abstract

A semiconductor device according to an embodiment includes a first electrode, a second electrode, a silicon carbide layer provided between the first electrode and the second electrode and including a first silicon carbide region of n type, a titanium nitride layer provided between the first electrode and the first silicon carbide region, and an intermediate layer provided between the titanium nitride layer and the first silicon carbide region and containing silicon nitride.

IPC Classes  ?

• H01L 29/872 - Schottky diodes
• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/47 - Schottky barrier electrodes
• H01L 29/66 - Types of semiconductor device

Abstract

According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fourth magnetic layers, and first to fifth non-magnetic layers. The fourth magnetic layer includes a first element and at least one of Fe, Co or Ni. The first element including at least one selected from the group consisting of Cr, V, Mn, Ti, N and Sc. The fourth non-magnetic layer including at least one selected from the group consisting of Cu, Au, Cr, Al, V and Ag. The fifth non-magnetic layer includes at least one selected from the group consisting of Cu, Au, Cr, Al, V and Ag.

IPC Classes  ?

• G11B 5/187 - Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to, the recording medium; Pole pieces; Gap features
• G11B 5/127 - Structure or manufacture of heads, e.g. inductive
• G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film
• G11B 5/49 - Fixed mountings

Abstract

According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fifth magnetic layers. A differential electric resistance of the magnetic element when a voltage between the first magnetic pole and the second magnetic pole being changed includes a first positive peak and a second positive peak. The voltage corresponding to the first positive peak is a first positive peak voltage. The voltage corresponding to the second positive peak is a second positive peak voltage. The second positive peak voltage is higher than the first positive peak voltage. An element voltage applied between the first magnetic pole and the second magnetic pole in a recording operation is higher than the second positive peak voltage.

IPC Classes  ?

• G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film

Abstract

A purchase data analysis apparatus includes processing circuitry. The processing circuitry is configured to: acquire, on a customer-by-customer basis, customer information including an action time of a purchase-related action relating to purchase; generate, on a customer-by-customer basis, a customer representation representing an action pattern of a customer, based on the action time; generate, on a store-by-store basis, a store representation representing a representation of a customer coming to a store, based on the customer representation; and cluster stores by using the store representation.

IPC Classes  ?

• G06Q 30/0201 - Market modelling; Market analysis; Collecting market data

Abstract

A semiconductor chip includes a semiconductor layer, a first electrode located between a first conductive member and the semiconductor layer, a first gate pad located between the first conductive member and the semiconductor layer, a second gate pad located between the first conductive member and the semiconductor layer, and a second electrode located between the semiconductor layer and a second conductive member. A plurality of terminals includes a first gate terminal electrically connected to the first gate pad via the interconnection member, a second gate terminal electrically connected to the second gate pad via the interconnection member, and a sense terminal electrically connected to the first conductive member via the interconnection member. The sense terminal is located between the first gate terminal and the second gate terminal in a plan view perpendicular to a first direction.

IPC Classes  ?

• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices

Abstract

A sonic inspection device of an embodiment includes: a sonic probe including a transducer configured to execute at least one of transmission and reception of a sound wave; and a contact member including: a first sheet-like member containing an elastomer and having a first surface that comes into contact with a sonic function surface of the sonic probe directly or with an intermediate member therebetween and a second surface opposite the first surface; and a second sheet-like member having a plurality of openings and provided in contact with the second surface of the first sheet-like member. The second sheet-like member includes a high-hardness member provided in at least a part in contact with the second surface and containing at least one selected from a polymer, a metal member, and a ceramic member higher in Young's modulus at room temperature than the first sheet-like member.

IPC Classes  ?

• G01N 29/24 - Probes
• G01N 29/04 - Analysing solids

Abstract

According to one embodiment, a sensor includes an element section including a first base and a first element. The first element includes a first fixed member fixed to the first base, a first connecting member supported by the first fixed member, and a first film portion supported by the first connecting member. A first gap is provided between the first base and the first film portion. The first film portion includes a first resistance layer, a first conductive layer, and a first conductive member. The first resistance layer does not overlap the first conductive layer in a first direction from the first base to the first fixed member. The first conductive member overlaps the first resistance layer and the first conductive layer in the first direction. A first electrical resistance of the first resistance layer changes according to a state of a detection target around the first element.

IPC Classes  ?

• G01N 27/04 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance

Abstract

A semiconductor device includes first and second electrodes, first to sixth semiconductor regions, and a gate electrode. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The second semiconductor region includes a first part and a second part. The second part is located on a portion of the first part. The third semiconductor region is located on an other portion of the first part. The fourth semiconductor region separated from the third semiconductor region with the second part interposed. The fifth semiconductor region is located on the third semiconductor region. The sixth semiconductor region is located on the fifth semiconductor region. The gate electrode faces the portion of the fifth semiconductor region via a gate insulating layer. The second electrode is located on the fifth and sixth semiconductor regions.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/66 - Types of semiconductor device
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

According to one embodiment, a sensor includes an element portion including a first base and a first element. The first element includes, a first fixed member fixed to the first base, a first resistance connecting member supported by the first fixed member, a first conductive connecting member supported by the first fixed member, and a first film portion supported by the first resistance connecting member and the first conductive connecting member. A first gap is provided between the first base and the first film portion. The first film portion includes a first resistance layer and a first conductive layer. The first resistance connecting member includes a first resistance wiring electrically connected to the first resistance layer. The first conductive connecting member includes a first conductive wiring electrically connected to the first conductive layer.

IPC Classes  ?

• G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
• G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups

Abstract

A neural network device according to an embodiment includes a plurality of neuron circuits, a plurality of synapse circuits, and a plurality of random number circuits. Each of the random number circuits outputs a random signal. Each of the synapse circuits receives the random signal from one of the random number circuits and updates a synaptic weight with a probability generated on the basis of the received random signal. The synapse circuits are divided into synapse groups. Each of two or more synapse circuits belonging to a first synapse group receives the random signal output from a first random number circuit. Each of two or more synapse circuits outputting output signals to a first neuron circuit belongs to a synapse group differing from a synapse group, to which other synapse circuits outputting the output signal to the first neuron circuit, belong.

IPC Classes  ?

• G06N 3/08 - Learning methods
• G06N 3/047 - Probabilistic or stochastic networks
• G06N 3/049 - Temporal neural networks, e.g. delay elements, oscillating neurons or pulsed inputs
• G06N 3/063 - Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means

Abstract

According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fifth magnetic layers, and first to sixth non-magnetic layers. The fifth magnetic layer includes a first element and at least one of Fe, Co or Ni. The first element includes at least one selected from the group consisting of Cr, V, Mn, Ti, N and Sc. The fifth non-magnetic layer includes at least one selected from the group consisting of Ru, Ir, Ta, Rh, Pd, Pt and W. The sixth non-magnetic layer includes at least one selected from the group consisting of Cu, Au, Cr, Al, V and Ag.

IPC Classes  ?

• G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film
• G11B 5/027 - Analogue recording

Abstract

According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fifth magnetic layers, and first to sixth non-magnetic layers. The sixth non-magnetic layer is provided between the fifth magnetic layer and the second magnetic pole. The sixth non-magnetic layer includes at least one selected from the group consisting of Cu, Au, Cr, Al, V and Ag.

IPC Classes  ?

• G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film
• G11B 5/027 - Analogue recording

Abstract

A semiconductor device includes a semiconductor layer, first and second electrodes, a control electrode, and a connection region. The semiconductor layer includes first to third semiconductor regions. The connection region is positioned between the first electrode and the first semiconductor region. The connection region includes a compound of a first metallic element and Si, and a compound of Pt and Si. The first metallic element is at least one selected from the group consisting of Ti, V, Cr, Zr, Mo, Hf, Ta, and W. The connection region includes a first part adjacent to an n-type region of the semiconductor layer in a first direction. A peak position of a concentration distribution of the first metallic element in the first direction of the first part is between the n-type region and a peak position of a concentration distribution of Pt in the first direction of the first part.

IPC Classes  ?

• H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• H01L 29/45 - Ohmic electrodes
• H01L 29/66 - Types of semiconductor device
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fifth magnetic layers, and first to sixth non-magnetic layers. The sixth non-magnetic layer is provided between the fifth magnetic layer and the second magnetic pole. The sixth non-magnetic layer includes at least one selected from the group consisting of Ru, Ir, Ta, Rh, Pd, Pt and W.

IPC Classes  ?

• G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film
• G11B 5/027 - Analogue recording

Abstract

According to one embodiment, a sensor includes an element section including a first base and a first element. The first element includes a first fixed member fixed to the first base, a first connecting member supported by the first fixed member, and a first film portion supported by the first connecting member. A first gap is provided between the first base and the first film portion. The first film portion includes a first resistance layer, a first conductive layer, and a first conductive member provided between the first resistance layer and the first conductive layer. A potential of the first conductive member is fixed. A first electrical resistance of the first resistance layer is configured to change according to a state of a detection target around the first element.

IPC Classes  ?

• G01N 27/04 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance

Abstract

A cell degradation level calculation device for electrochemical cell stack according to an embodiment includes: a first calculation unit that calculates a first target voltage value based on first characteristics data; a second calculation unit that calculates a second target voltage value based on second characteristics data; and a third calculation unit that calculates a cell degradation level showing a degradation level of a cell based on the first target voltage value and the second target voltage value. The first target voltage value is the voltage value at which a voltage-value decrease rate reaches a first threshold value in a second time slot of the first characteristics data. The second target voltage value is the voltage value at which the voltage-value decrease rate reaches a second threshold value in a fourth time slot of the second characteristics data.

IPC Classes  ?

• H01M 8/04664 - Failure or abnormal function
• H01M 8/04537 - Electric variables

Abstract

According to one embodiment, a key management device includes an acquiring circuitry and a processor. The acquiring circuitry is configured to: acquire identity verification data of a remote QKD key generated by a remote QKD device, and remote QKD device identification information identifying the remote QKD device, from another key management device via a classical communication channel. The processor is configured to: collect a local QKD key generated by a local QKD device and local QKD device identification information identifying the local QKD device; generate identity verification data of the local QKD key; and map, when the identity verification data of the remote QKD key matches the identity verification data of the local QKD key, the remote QKD device identification information to the local QKD device identification information.

IPC Classes  ?

• H04L 9/08 - Key distribution

Abstract

A solid-state imaging device includes a semiconductor substrate that includes a first region in which a plurality of first photodiodes are arranged along a first direction, and a second region in which a plurality of second photodiodes are arranged along the first direction, and an insulating film that is disposed on the semiconductor substrate to cover the first region and the second region. The insulating film includes an optical path changing portion that changes an optical path of light incident on the insulating film on the first region and directed to the second region in at least an intermediate region between a first edge photodiode closest to the second region among the plurality of first photodiodes and a second edge photodiode closest to the first region among the plurality of second photodiodes.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A semiconductor device includes first and second electrodes, first to fourth semiconductor regions, first and second control electrodes, and first and second electrode pads. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The fourth semiconductor region is located on a portion of the third semiconductor region. The first control electrode faces the second, third, and fourth semiconductor regions via a first insulating film. The second control electrode faces the second and third semiconductor regions via a second insulating film. The first electrode pad is electrically connected with the first control electrode. The second electrode pad is electrically connected with the second control electrode. The second electrode pad has a different planar shape from the first electrode pad.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect

Abstract

A semiconductor device includes a semiconductor layer including an element region, and a termination region; a first electrode; a second electrode; a semi-insulating film located on the termination region; an insulating film located between the semiconductor layer and the semi-insulating film; and a protective film located on the semi-insulating film. The insulating film includes an inner perimeter portion, the inner perimeter portion being located between an end portion of the first electrode positioned at the termination region side and an end portion of the second semiconductor part positioned at the termination region side, an outer perimeter portion located between the second electrode and the semiconductor layer, and an intermediate portion located between the inner perimeter portion and the outer perimeter portion. A thickness of the intermediate portion is less than a thickness of the inner perimeter portion and a thickness of the outer perimeter portion.

IPC Classes  ?

• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Abstract

A semiconductor device includes first and second electrodes, a first interconnect, a semiconductor layer, first and second control electrodes. The second electrode is disposed in an element region. The first interconnect is disposed in a first interconnect region. The semiconductor layer is provided between the first electrode and the second electrode and between the first electrode and the first interconnect. The semiconductor layer includes first to seventh semiconductor regions. The second semiconductor region is provided between the first electrode and the first semiconductor region. The first semiconductor region includes a first semiconductor portion disposed in the first interconnect region and a second semiconductor portion disposed in the element region. The seventh semiconductor region is disposed in the element region. The first control electrode is arranged with the first and second semiconductor regions. The second control electrode is arranged with the first, second and seventh semiconductor regions.

IPC Classes  ?

• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/861 - Diodes

Abstract

According to one embodiment, a sensor includes a fixed member, a movable member, a first counter electrode, a second counter electrode, a first resistance element, a second resistance element, and a control device. The control device includes a controller. The controller performs a first correction operation in a state where the movable member does not receive an external force. In the first correction operation, the controller causes the movable member to generate a first vibration. In the first correction operation, the controller derives a first correction value based on a first detection result of a first component and a second detection result of a second component. The first correction value includes at least one of a first resistance correction value, a second resistance correction value, a first voltage correction value, or a second voltage correction value such that the movable member vibrates along the first direction.

IPC Classes  ?

• G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure

Abstract

According to one embodiment, a magnetic disk device comprises a control part configured to execute a cache control based on accompanying information included in a command wherein the command includes a data write command to a disk or a data read command from the disk.

IPC Classes  ?

• G06F 3/06 - Digital input from, or digital output to, record carriers
• G06F 12/0802 - Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches

Abstract

In one embodiment, a heat storage power generation system includes a heater to heat first fluid, and a heat storage to be heated by the first fluid, and heat second fluid with heat stored in the heat storage. The system further includes a generator to generate electric power by using the second fluid, and one or more first path switchers provided on a first path through which the first fluid is circulated between the heater and heat storage. The system further includes one or more second path switchers provided on a second path through which the second fluid is circulated between the heat storage and generator, one or more third path switchers provided on a third path through which at least one of the first and second fluids is circulated between the heater and generator, and a switching controller to control the first, second and third path switchers.

IPC Classes  ?

• F28D 20/00 - Heat storage plants or apparatus in general; Regenerative heat-exchange apparatus not covered by groups or
• F28D 20/02 - Heat storage plants or apparatus in general; Regenerative heat-exchange apparatus not covered by groups or using latent heat

Abstract

A granulated particle for cold storage material particle according to an embodiment includes: a rare earth oxysulfide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, or a rare earth oxide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; and carbon having a concentration of 0.001 wt % or more and 50 wt % or less, in which the granulated particle has a relative density of 10% or more and 50% or less.

IPC Classes  ?

• C09K 5/14 - Solid materials, e.g. powdery or granular
• A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
• F28D 20/00 - Heat storage plants or apparatus in general; Regenerative heat-exchange apparatus not covered by groups or
• G01R 33/38 - Systems for generation, homogenisation or stabilisation of the main or gradient magnetic field

Abstract

According to one embodiment, a semiconductor device includes a first transistor, a first circuit, and a second circuit. A source of the first transistor is coupled to a first terminal. A gate of the first transistor is coupled to a first node. The first circuit includes a first comparator and a current limiting circuit. The second circuit includes a second comparator, a second transistor, a third transistor, and a third circuit. A source of the second transistor is grounded. A drain of the second transistor is coupled to the first node. The third circuit is configured to turn on the second transistor and the third transistor for a first time period based on an output of the second comparator.

IPC Classes  ?

• H02H 3/20 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage
• H02H 1/00 - EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS - Details of emergency protective circuit arrangements

Abstract

According to an embodiment, in an air-cooled cooling structure that cools the heating element with air, the air-cooled cooling structure includes a support member that supports the heating element on the inner face and an air guide portion. The air guide portion generates a spiral air flow with the extension direction of the support member as an axis. Furthermore, the air guide portion may include a fan that forcibly generates the air flow.

IPC Classes  ?

• H01Q 1/02 - Arrangements for de-icing; Arrangements for drying-out
• H01Q 1/42 - Housings not intimately mechanically associated with radiating elements, e.g. radome

Abstract

According to one embodiment, an emotion estimation apparatus includes processing circuitry. The processing circuitry is configured to acquire medium data of a target user in which a medium of the target user is recorded, extract medium features from the medium data of the target user, calculate an emotion feature based on the extracted medium features and an emotion feature extraction model denoting a reference for the medium features of the target user, and estimate an emotion of the target user based on the calculated emotion feature.

IPC Classes  ?

• G10L 25/63 - Speech or voice analysis techniques not restricted to a single one of groups specially adapted for particular use for comparison or discrimination for estimating an emotional state
• G10L 15/02 - Feature extraction for speech recognition; Selection of recognition unit

Abstract

According to one embodiment, an encoder includes a first element part and a controller. The first element part includes a first qubit, a second qubit couplable with the first qubit, a third qubit couplable with the second qubit, a fourth qubit couplable with the third qubit, a fifth qubit couplable with the fourth qubit, a sixth qubit couplable with the fifth qubit, a seventh qubit couplable with the sixth qubit, an eighth qubit couplable with the seventh qubit, and a ninth qubit couplable with the eighth qubit. The controller is configured to perform a first control. The first control includes encoding a surface code having a code distance of 3.

IPC Classes  ?

• G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
• H03M 13/31 - Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes combining coding for error detection or correction and efficient use of the spectrum

Abstract

According to one embodiment, a secondary battery provided with a negative electrode including a negative electrode active material-containing layer, a positive electrode including a positive electrode active material-containing layer, a separator located between the negative electrode and the positive electrode, and an aqueous electrolyte is provided. The separator includes a composite layer containing inorganic solid particles and a polymeric material. A particle size distribution of the inorganic solid particles in the composite layer has at least two peaks. A frequency FPS of a peak top PS of a peak on a smallest particle diameter side and a frequency FPL of a peak top PL of a peak on a largest particle diameter side in the particle size distribution have a relationship of 0.9≤FPS/FPL≤5. A porosity of the composite layer is less than both of a porosity of the negative electrode active material-containing layer and a porosity of the positive electrode active material-containing layer, and is 1% or more and less than 15%.

IPC Classes  ?

• H01M 50/451 - Separators, membranes or diaphragms characterised by the material having a layered structure comprising layers of only organic material and layers containing inorganic material
• H01M 4/36 - Selection of substances as active materials, active masses, active liquids
• H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• H01M 50/491 - Porosity

Abstract

According to one embodiment, a training method computes a first feature map and a first attention map from a first image, and computes a second feature map and a second attention map from a second image, by inputting the first image, which does not include a defective area of a target, and the second image, which includes the defective area of the target, to a machine learning model. The training method computes a first loss, based on the first attention map. The training method computes a class classification of the target, based on the second feature map and the second attention map. The training method computes a second loss, based on the class classification. The training method computes a total loss, based on the first loss and the second loss. The training method updates a parameter of the machine learning model so as to minimize the total loss.

IPC Classes  ?

• G06V 10/771 - Feature selection, e.g. selecting representative features from a multi-dimensional feature space
• G06T 7/00 - Image analysis
• G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects

Abstract

According to one embodiment, a learning system includes a plurality of local devices and a server. The plurality of local devices each includes processing circuitry configured to determine a federated local training condition indicating a training condition in federated learning of a local model based on preliminary local training information including a preliminary local training condition and a preliminary local training result in a case where a model is preliminarily trained using local data. The server includes processing circuitry configured to determine a global training condition of a global model based on the preliminary local training information.

IPC Classes  ?

• G06N 3/098 - Distributed learning, e.g. federated learning

Abstract

An anomaly detection device according to an embodiment includes a parameter set storage unit, a detection unit, an information input unit, and a processing unit. The parameter set storage unit stores a plurality of parameter sets used for detecting an anomaly in at least one piece of target data. The detection unit detects an anomaly in the at least one piece of target data using at least one parameter set selected from the parameter sets, and acquires at least one detection result. The information input unit receives an input of teaching information corresponding to the at least one detection result. The processing unit performs at least one of update, addition, and deletion of the parameter set based on the teaching information.

IPC Classes  ?

• G06F 11/07 - Responding to the occurrence of a fault, e.g. fault tolerance

Abstract

According to one embodiment, a carbon dioxide adsorbent is provided. The carbon dioxide adsorbent is capable of adsorbing and desorbing carbon dioxide and includes one or more cyclic disulfide structures.

IPC Classes  ?

• B01J 20/22 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material
• B01D 53/02 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography
• B01J 20/34 - Regenerating or reactivating

Abstract

According to one embodiment, an image encoding method includes selecting a motion reference block from an already-encoded pixel block. The method includes selecting an available block including different motion information from the motion reference block, and selecting a selection block from the available block. The method includes generating a predicted image of the encoding target block using motion information of the selection block. The method includes encoding a prediction error between the predicted image and an original image. The method includes encoding selection information identifying the selection block by referring to a code table decided according to a number of the available block.

IPC Classes  ?

• H04N 19/513 - Processing of motion vectors
• H04N 19/105 - Selection of the reference unit for prediction within a chosen coding or prediction mode, e.g. adaptive choice of position and number of pixels used for prediction
• H04N 19/109 - Selection of coding mode or of prediction mode among a plurality of temporal predictive coding modes
• H04N 19/119 - Adaptive subdivision aspects e.g. subdivision of a picture into rectangular or non-rectangular coding blocks
• H04N 19/124 - Quantisation
• H04N 19/137 - Motion inside a coding unit, e.g. average field, frame or block difference
• H04N 19/139 - Analysis of motion vectors, e.g. their magnitude, direction, variance or reliability
• H04N 19/15 - Data rate or code amount at the encoder output by monitoring actual compressed data size at the memory before deciding storage at the transmission buffer
• H04N 19/159 - Prediction type, e.g. intra-frame, inter-frame or bidirectional frame prediction
• H04N 19/176 - Methods or arrangements for coding, decoding, compressing or decompressing digital video signals using adaptive coding characterised by the coding unit, i.e. the structural portion or semantic portion of the video signal being the object or the subject of the adaptive coding the unit being an image region, e.g. an object the region being a block, e.g. a macroblock
• H04N 19/182 - Methods or arrangements for coding, decoding, compressing or decompressing digital video signals using adaptive coding characterised by the coding unit, i.e. the structural portion or semantic portion of the video signal being the object or the subject of the adaptive coding the unit being a pixel
• H04N 19/52 - Processing of motion vectors by encoding by predictive encoding
• H04N 19/61 - Methods or arrangements for coding, decoding, compressing or decompressing digital video signals using transform coding in combination with predictive coding
• H04N 19/70 - Methods or arrangements for coding, decoding, compressing or decompressing digital video signals characterised by syntax aspects related to video coding, e.g. related to compression standards
• H04N 19/96 - Tree coding, e.g. quad-tree coding

Abstract

According to one embodiment, a control circuit includes a capacitive element connected between an output terminal of an output-switching transistor circuit and a control electrode, and a charge circuit charges the capacitive element when the ON/OFF switching signal is switched from an OFF command to an ON command, delay improvement circuit shortens a delay time from OFF to ON of the transistor circuit by setting the ON/OFF control voltage of the transistor circuit to the first switching threshold in conjunction with the operation of the charge circuit.

IPC Classes  ?

• H03K 17/0412 - Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
• H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
• H03K 19/0185 - Coupling arrangements; Interface arrangements using field-effect transistors only

Abstract

A measurement method includes determining a first relationship by measuring a reverse recovery charge of a semiconductor element at a plurality of conditions of a measurement device. The measurement device has mutually-different parasitic inductances at the plurality of conditions. The semiconductor element includes a diode component. The first relationship is between the parasitic inductance and a measured value of the reverse recovery charge. The method includes estimating a true value of the reverse recovery charge when the parasitic inductance is zero based on the first relationship.

IPC Classes  ?

• G01R 31/26 - Testing of individual semiconductor devices

Abstract

According to one embodiment, an information processing apparatus includes a processor configured to acquire information indicating a position of an antenna that radiates a control signal for controlling a moving vehicle using a radio wave, information indicating a position of an object in a space, and information indicating radio wave transmittance of the object, the radio wave transmittance indicating a degree of transmission of the radio wave through the object, and to evaluate a propagation environment of the radio wave in the space based on the information indicating the position of the antenna, the information indicating the position of the object, and the information indicating the radio wave transmittance of the object.

IPC Classes  ?

• G05D 1/02 - Control of position or course in two dimensions
• G01S 13/931 - Radar or analogous systems, specially adapted for specific applications for anti-collision purposes of land vehicles
• H04W 4/44 - Services specially adapted for particular environments, situations or purposes for vehicles, e.g. vehicle-to-pedestrians [V2P] for communication between vehicles and infrastructures, e.g. vehicle-to-cloud [V2C] or vehicle-to-home [V2H]

Abstract

An electronic circuitry includes: a comparison circuit to detect a first voltage at a first node relating to a first end of a semiconductor switching element and output a first signal in response to the first voltage larger than a predetermined voltage or equal to; a first filter including a first switch between the first node and a second end of the element, the first filter turning on the first switch for a first time based on a control signal indicating conduction of the element; and a second filter to, in response to the first signal output for at least a second time, generate a second signal indicating an overcurrent of the element, wherein the electronic circuitry changes at least one of: a first waveform related to driving of the semiconductor switching element based on the control signal; the second time; the first time; or the predetermined voltage.

IPC Classes  ?

• H02H 7/122 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
• H02H 1/00 - EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS - Details of emergency protective circuit arrangements

Abstract

A chemical sensor includes a sensor element; a first electrode electrically connected to the sensor element; a second electrode electrically connected to the sensor element; an aptamer located on a surface of the sensor element; a solution covering the surface of the sensor element and the aptamer; and a tropane derivative having a tropane skeleton and contained in the solution.

IPC Classes  ?

• G01N 27/327 - Biochemical electrodes

Abstract

According to one embodiment, a troubleshooting support apparatus includes processing circuitry. The processing circuitry acquires multiple pieces of document data which describe content of a problem relating to multiple articles or services. The processing circuitry extracts, from the multiple pieces of document data, multiple first keywords relating to the multiple articles or services together with attribute information. The processing circuitry records the multiple first keywords in a memory for the respective pieces of attribute information. The processing circuitry determines, based on a rate of occurrence of each of multiple second keywords relating to predetermined attribute information among the first keywords recorded in the memory, a display manner of first data relating to each of the multiple second keywords.

IPC Classes  ?

• G06Q 30/016 - After-sales

Abstract

According to one embodiment, a processing device includes a processor. The processor is configured to acquire first radar echoes from a plurality of first antennas, generate a first radar image by calculating a spatial correlation between the first radar echoes represented by complex numbers, acquire second radar echoes from a plurality of second antennas, generate a second radar image by calculating a spatial correlation between the second radar echoes represented by complex numbers, and generate a third radar image by applying at least one of a first synthesis method by synthesis of pixel values represented by complex numbers or a second synthesis method by image synthesis to the generated first and second radar images.

IPC Classes  ?

• G01S 13/90 - Radar or analogous systems, specially adapted for specific applications for mapping or imaging using synthetic aperture techniques

Abstract

A semiconductor device includes first to third conductive portions, a first insulating portion, and a semiconductor portion. The semiconductor portion includes a first semiconductor region provided between the first conductive portion and the second conductive portion, and a second semiconductor region provided between the second conductive portion and the first insulating region. The second conductive portion includes a first conductive region in Schottky junction with the first semiconductor region, and a second conductive region in Schottky junction with the second semiconductor region. When the first conductivity-type is an n-type, a work function of the first conductive region is smaller than a work function of the second conductive region. When the first conductivity-type is a p-type, the work function of the first conductive region is larger than the work function of the second conductive region.

IPC Classes  ?

• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• H01L 29/40 - Electrodes
• H01L 29/47 - Schottky barrier electrodes

Abstract

According to one embodiment, a communication control device included in a first communication device is provided. The communication control device includes an acquisition unit, a first processing unit, a request unit and a first memory unit. The acquisition unit acquires data transmitted from the first communication device to a second communication device or data transmitted from the second communication device to the first communication device. The first processing unit performs an encryption process or a decryption process on the data by using key data in a case where the data belongs to a flow. The request unit requests transfer of key data for each flow via an internal bus. The first memory unit stores the key data transferred in response to the request.

IPC Classes  ?

• G06F 21/79 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data in semiconductor storage media, e.g. directly-addressable memories
• G06F 21/82 - Protecting input, output or interconnection devices

Abstract

According to one embodiment, an information processing apparatus includes a first processing circuit. The first processing circuit is configured to specify a first route along which a first mobile object is moving in a case where a state signal regarding a state of the first mobile object moving based on a first control signal regarding movement of the first mobile object is not received, specify a second mobile object different from the first mobile object based on the specified first route, and generate a second control signal regarding movement of the specified second mobile object.

IPC Classes  ?

• G05D 1/02 - Control of position or course in two dimensions

Abstract

According to one embodiment, a control system includes first and second control devices. The first control device includes a management unit that manages global time, a first generation unit that generates local time, a control unit that controls an operation of the first control device based on the global time, the local time, and operation control information, and a second generation unit that generates time error information based on the global time and the local time. The second control device includes an acquisition unit that acquires the time error information, and a correction unit that corrects the operation control information based on the time error information.

IPC Classes  ?

• H04J 3/06 - Synchronising arrangements

Abstract

A semiconductor device of embodiments includes: a transistor region including a semiconductor layer having a first face and a second face opposite to the first face, a first transistor having a first gate electrode provided on a first face side of the semiconductor layer, and a second transistor having a second gate electrode provided on a second face side of the semiconductor layer; and an adjacent region adjacent to the transistor region and including the semiconductor layer and a third transistor having a third gate electrode electrically connected to the second gate electrode and provided on the second face side of the semiconductor layer and the third transistor having an absolute value of a threshold voltage smaller than an absolute value of a threshold voltage of the second transistor.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/861 - Diodes

Abstract

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1<1). The second semiconductor region includes Alx2Ga1-x2N (0

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/66 - Types of semiconductor device

Abstract

An information processing device according to an embodiment includes a risky vulnerability detection unit, a technical similarity calculation unit, a risk score calculation unit, and an output unit. The risky vulnerability detection unit detects, as a risky vulnerability, a vulnerability having the possibility of being attacked for an object system executing information processing. For each vulnerability registered in advance, the technical similarity calculation unit calculates a technical similarity representing a technical similarity to the risky vulnerability. For each vulnerability, the risk score calculation unit calculates a risk score representing the level of the risk of attack on each vulnerability in the object system, based on the technical similarity. The output unit determines at least one of the vulnerabilities as a target vulnerability to be dealt with, based on the risk score for each vulnerability, and outputs identification information for identifying the target vulnerability.

IPC Classes  ?

• G06F 21/57 - Certifying or maintaining trusted computer platforms, e.g. secure boots or power-downs, version controls, system software checks, secure updates or assessing vulnerabilities

Abstract

According to one embodiment, an information processing apparatus includes a processor. The processor modifies graph data to generate two pieces of new graph data. The processor extracts, by an extraction model, features of respective nodes in the graph data. The processor calculates a contrastive loss by using similarity between the extracted features. The processor calculates a structural loss by using between the extracted features. The processor updates the extraction model using the contrastive loss and the structural loss.

IPC Classes  ?

• G06Q 50/00 - Systems or methods specially adapted for specific business sectors, e.g. utilities or tourism

Abstract

An axial fan includes: an impeller including a rotating part, and a blade part connected to the rotating part; a bellmouth including a flat part orthogonal to an extension direction of a rotation axis of the rotating part; a rising part rising from the flat part; and an opening along which the rising part extends, the impeller being located in the opening, the rising part surrounding the impeller, the bellmouth including a plurality of grooves located at a surface of the bellmouth, the surface of the bellmouth being connected to an inner surface of the rising part, the inner surface of the rising part facing the blade part of the impeller, the plurality of grooves being located in at least a corner portion connecting the flat part and the rising part, the plurality of grooves extending in a direction crossing the flat part.

IPC Classes  ?

• F04D 29/52 - Casings; Connections for working fluid for axial pumps
• F04D 19/00 - Axial-flow pumps specially adapted for elastic fluids
• F04D 29/54 - Fluid-guiding means, e.g. diffusers

Abstract

The RNN training apparatus includes a storage and processing circuitry. The storage stores a hidden state of an RNN for the N sequences. The processing circuitry selects M (M

Abstract

A driver circuitry includes first-fifth inverters which have lower withstand voltage, and first-sixth transistors which have higher withstand voltage. In the first transistor, a first voltage is applied to a first end, and a second end is connected to the high withstand voltage element. The second transistor is connected to the first transistor. The second inverter is connected to the first inverter and the first transistor. The third inverter is connected to the first inverter. The third transistor is connected to the second inverter. The fourth transistor is connected to the third transistor. The fifth transistor is connected to the third inverter. The sixth transistor is connected to the fifth transistor. The fourth inverter is connected to the sixth transistor and the second transistor. The fifth inverter is connected to the fourth transistor, the fourth inverter, and the fourth inverter.

IPC Classes  ?

• H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
• H03K 17/0412 - Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
• H03K 19/0185 - Coupling arrangements; Interface arrangements using field-effect transistors only
• H03K 19/0948 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET using CMOS

Abstract

According to one embodiment, an abnormal noise detection device includes a first processing circuit. The first processing circuit is configured to collect an operating noise of a moving body by a first microphone installed in the moving body; detect an abnormal noise in the operating noise; input position information of the moving body; and store history information in which a detection result of detecting the abnormal noise and the position information are associated with each other in a first memory. The first processing circuit is configured to determine presence or absence of abnormality of the moving body by integrating the detection result for each piece of the position information on a basis of the history information.

IPC Classes  ?

• B66B 5/00 - Applications of checking, fault-correcting or safety devices in elevators
• B66B 1/34 - Control systems of elevators in general - Details
• B66B 3/00 - Applications of devices for indicating or signalling operating conditions  of elevators
• H04R 1/02 - Casings; Cabinets; Mountings therein
• H04R 1/40 - Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by combining a number of identical transducers
• H04R 3/00 - Circuits for transducers

Abstract

According to one embodiment, an information processing apparatus includes a processor configured to acquire first reception power of a first signal radiated from an antenna when the first signal is received at a first point, acquire second reception power of a second signal radiated from the antenna, the second signal being different from the first signal, when the second signal is received at a second point, and determine, based on a difference between periodicity of the acquired first reception power and periodicity of the acquired second reception power, presence or absence of an object in a space facing the antenna with the second point interposed between the antenna and the space.

IPC Classes  ?

• G01V 3/12 - Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination or deviation operating with electromagnetic waves

Abstract

According to one embodiment, a sensing system includes a reflective optical element, and an optical device. The reflective optical element includes a plurality of optical structures arranged along a first plane. The optical device includes an element face. The optical device is configured to perform a first operation and a second operation. The optical device is configured to emit infrared rays from the element face in the first operation. The optical device is configured to detect the infrared rays reflected by the reflective optical element and incident on the element face in the second operation.

IPC Classes  ?

• G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
• G02B 1/00 - Optical elements characterised by the material of which they are made; Optical coatings for optical elements
• G02B 17/00 - Systems with reflecting surfaces, with or without refracting elements
• H01S 5/00 - Semiconductor lasers
• H01S 5/34 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

Abstract

According to one embodiment, when a control unit is notified of information in at least one second signal received by one of first and second wireless communication units after the control unit provides the second wireless communication unit with a command to transmit a first signal containing first address information and before a waiting time elapses and when the at least one second signal contains second address information assigned to an authentication apparatus having received the first signal, then the control unit provides the first wireless communication unit with a command to transmit a third signal for a connection request with the second address information set in a destination address.

IPC Classes  ?

• G07C 9/27 - Individual registration on entry or exit involving the use of a pass with central registration
• G07C 9/20 - Individual registration on entry or exit involving the use of a pass
• H04L 5/00 - Arrangements affording multiple use of the transmission path
• H04L 9/40 - Network security protocols
• H04W 12/06 - Authentication
• H04W 84/12 - WLAN [Wireless Local Area Networks]

Abstract

According to one embodiment, a semiconductor device includes a base, a first silicon carbide region, and a second silicon carbide region. The first silicon carbide region includes at least one selected from the group consisting of nitrogen, phosphorus and arsenic. The second silicon carbide region includes at least one selected from the group consisting of boron, aluminum and gallium. The first silicon carbide region is provided between the base and the second silicon carbide region. At least a part of the first silicon carbide region includes fluorine.

IPC Classes  ?

• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

According to one embodiment, a sound absorption apparatus includes a front plate, a back plate, a diaphragm, a supporting member, a second frame, and a third frame. The front plate has a sound hole. The back plate faces the front plate. The diaphragm is provided between the front plate and the back plate. The supporting member supports the diaphragm. The supporting member includes a first frame attached to the diaphragm, a first member located inside the first frame and attached to the diaphragm, and a connecting member connecting the first frame and the first member. The second frame forms a first space between the front plate and the diaphragm. The third frame forms a second space between the back plate and the diaphragm.

IPC Classes  ?

• G10K 11/172 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using resonance effects

Abstract

A semiconductor device includes a semiconductor layer, an insulating film, a first conductive portion, and a second conductive portion. The first conductive portion is provided in the semiconductor layer. The insulating film is provided in the semiconductor layer. The insulating film is provided between the semiconductor layer and the first conductive portion. The second conductive portion is provided in the semiconductor layer. The second conductive portion is disposed such that the first conductive portion is located between the second conductive portion and the insulating film. The second conductive portion is electrically connected to the first conductive portion. The second conductive portion has residual stress with force components in directions opposite to directions of force components of residual stress of the first conductive portion.

IPC Classes  ?

• H01L 29/94 - Metal-insulator-semiconductors, e.g. MOS
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions

Abstract

According to one embodiment, a solar module system includes: a support member that has a principal surface; a solar module arranged on the principal surface; a first terminal arranged on the support member and electrically connected with an electrode of the solar module; a frame member configured to hold the support member such that the solar module opposes to a transparent member; and a second terminal arranged on the frame member and electrically connected with the first terminal of the support member being held by the frame member.

IPC Classes  ?

• H02S 40/34 - Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
• H02S 30/10 - Frame structures

Abstract

An information processing apparatus includes processing circuitry configured to specify a first consent record that includes an identifier for a first business operator, which identifies the related party and which is assigned exclusively to the first business operator, and consent of the related party allowing the first business operator to execute a first handling of the data of the related party, and detect a related party identifier corresponding to the identifier for the first business operator included in the first consent record; and searching circuitry configured to search the first storage system for a second consent record that includes consent of the related party allowing a second business operator to execute a second handling of the data, wherein the processing circuitry is configured to generate an audit record including a record identifier that identifies the first consent record and information regarding the presence or absence of the second consent record.

IPC Classes  ?

• G06F 21/64 - Protecting data integrity, e.g. using checksums, certificates or signatures
• H04L 9/00 - Arrangements for secret or secure communications; Network security protocols

Abstract

A magnetic component of an embodiment has a resin-made hollow container that houses a doughnut-shaped magnetic core, and the resin forming the hollow container exhibits a white color to gray color having a chromatic value C of 0 (achromatic) to 2 and a lightness V or 8 or higher as defined by JIS Z8721 “Color specification—Specification according to their three attributes”. The hollow container has an inner wall portion formed to form a hollow portion, an outer wall portion formed to surround the inner wall portion, and a bottom portion provided at one end of each of the inner wall portion and the outer wall portion to close a space between the inner wall portion and the outer wall portion, and houses the doughnut-shaped magnetic core between the inner wall portion and the outer wall portion.

IPC Classes  ?

• H01F 27/25 - Magnetic cores made from strips or ribbons

Abstract

According to one embodiment, a signal processing circuit includes a first voltage setting circuit that sets a reference voltage on an input side of an isolator, a variable gain amplifier circuit that amplifies an output signal of the isolator, a DC offset adjustment circuit that adjusts an offset of the variable gain amplifier circuit, a second voltage setting circuit that sets a reference voltage on an output side of the isolator, and a control circuit that controls the DC offset adjustment circuit in response to a result of comparison of an output voltage of the variable gain amplifier circuit with an output voltage of the second voltage setting circuit.

IPC Classes  ?

• H03F 3/45 - Differential amplifiers
• H01P 1/36 - Isolators
• H03G 3/30 - Automatic control in amplifiers having semiconductor devices
• H03K 5/24 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude

Abstract

An indoor position information storage processing system of an embodiment includes an electric power apparatus, a first transmitter, a first receiver, a position detector, and a first information processing device. The first information processing device processes information based on the distance-measurement waves and a position of the first receiver. The first distance calculation unit calculates a distance between the first transmitter and the first receiver on the basis of distance-measurement waves received by the first receiver. The first position calculation unit calculates a position of the first transmitter on the basis of the calculated distance and a position of the first receiver. The first storage processing unit stores the calculated position of the first transmitter in a storage unit as a position of the electric power apparatus.

IPC Classes  ?

• G06Q 30/0204 - Market segmentation
• G01S 5/14 - Determining absolute distances from a plurality of spaced points of known location

Abstract

According to one embodiment, a magnetic head includes first to fourth shields, first to fourth terminals, and first magnetic member. The third shield includes a first partial region and a second partial region. The fourth shield includes a third partial region and a fourth partial region. The first magnetic member is provided between a portion of the first shield and a portion of the second shield in a first direction from the first shield to the second shield. The first magnetic member is provided between the first partial region and the third partial region in a second direction crossing the first direction. The portion of the first shield is located between the second partial region and the fourth partial region in the second direction.

IPC Classes  ?

• G11B 5/11 - Shielding of head against electric or magnetic fields
• G11B 5/127 - Structure or manufacture of heads, e.g. inductive
• G11B 5/48 - Disposition or mounting of heads relative to record carriers

Abstract

In a device, a first transistor has a gate connected to an input. A first resistance is connected between one end of the first transistor and a first power supply line. A second resistance is connected between the other end of the first transistor and the second power supply line. A second transistor has a gate connected to a first node between the first transistor and the first resistance, and one end thereof is connected to the first power supply line. A current source is connected to the other end of the second transistor and the second power supply line. An inverter circuit has an input part connected to a second node between the second transistor and the current source, has an output part connected to an output, and outputs a voltage on any of the first power supply line or the second power supply line from the output.

IPC Classes  ?

• H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
• H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Abstract

A laser cleaning process for removing a foreign matter from a processing portion of a base material includes: determining that the foreign matter is on the processing portion; determining a state of the foreign matter; determining whether the foreign matter can be removed from the processing portion; and removing from the processing portion the foreign matter that has been determined to be removable from the processing portion.

IPC Classes  ?

• B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass
• B23K 26/03 - Observing, e.g. monitoring, the workpiece
• B23K 26/064 - Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms

Abstract

A computer program product includes a computer-readable recording medium on which programmed instructions causing a computer to perform the following processing are recorded. The computer specifies a reference coordinate system of a three-dimensional position. The computer detects, from an image data, an area in which a designated target object is included. The computer extracts, from three-dimensional point cloud data, extraction point cloud data representing a three-dimensional position of an object in a target area. The computer generates target object information. A shape and an orientation of a first portion of the designated target object are defined. The orientation is defined for one of coordinate axes in the reference coordinate system. The computer generates the target object information by fitting the target object model to the extraction point cloud data under a condition that an orientation of the target object model matches an orientation defined for the first portion.

IPC Classes  ?

• G06T 7/564 - Depth or shape recovery from multiple images from contours
• G06T 7/73 - Determining position or orientation of objects or cameras using feature-based methods
• G06T 17/00 - 3D modelling for computer graphics

Abstract

According to an embodiment, a magnetic disk device includes: a magnetic disk; an arm; a support member provided at a distal end of the arm; a magnetic head provided on the support member and configured to access the magnetic disk; a first actuator configured to rotate the arm; a second actuator configured to drive the support member; and one or more processors configured to implement a controller configured to perform seek control of the magnetic head. The controller includes: a feedback controller configured to control a first command value for driving the first actuator so as to reduce an error between a position of the magnetic head and a target position; and an iterative learning controller configured to receive an input value based on the error and output a second command value for driving the second actuator by iterative learning.

IPC Classes  ?

• G11B 5/48 - Disposition or mounting of heads relative to record carriers
• G11B 5/56 - Disposition or mounting of heads relative to record carriers with provision for moving the head for the purpose of adjusting the position of the head relative to the record carrier, e.g. manual adjustment for azimuth correction or track centering

Abstract

An analysis method may determine the presence of affection of at least any one of breast cancer, pancreatic cancer, lung cancer, gastric cancer, and colorectal cancer. The analysis method may include quantifying at least any one of hsa-miR-205-5p, hsa-miR-30e-5p, hsa-miR-106b-5p, hsa-miR-3613-5p, hsa-miR-483-5p, hsa-miR-574-3p, hsa-miR-125b-5p, hsa-miR-223-5p, hsa-miR-3613-3p, hsa-miR-941, hsa-miR-324-3p, hsa-miR-193a-5p, hsa-miR-4433a-3p, hsa-miR-29c-3p, hsa-miR-190a-5p, hsa-miR-885-5p, hsa-miR-194-5p, hsa-miR-29a-3p, hsa-miR-142-5p, hsa-miR-142-3p, hsa-miR-122-5p, hsa-miR-34a-5p, and hsa-miR-375-3p in a sample derived from an object.

IPC Classes  ?

• C12Q 1/6886 - Nucleic acid products used in the analysis of nucleic acids, e.g. primers or probes for diseases caused by alterations of genetic material for cancer
• C12Q 1/6851 - Quantitative amplification

Abstract

A ceramic copper circuit board according to an embodiment includes a ceramic substrate, and a copper circuit part bonded to at least one surface of the ceramic substrate via a brazing material layer. The brazing material layer includes one or two selected from Cu, Ti, Sn, or In. The brazing material layer includes a bonding part located between the ceramic substrate and the copper circuit part, and a first jutting part located at a periphery of the bonding part; and a titanium content of the first jutting part is within a range of not less than 70 mass % and not more than 100 mass %. It is favorable for the total of the titanium content and the nitrogen content of the first jutting part to be not less than 99 mass % and not more than 100 mass %.

IPC Classes  ?

• H05K 1/03 - Use of materials for the substrate
• H05K 1/02 - Printed circuits - Details
• H05K 3/02 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding

Abstract

A semiconductor device of embodiments includes: a semiconductor layer having a first face and a second face opposite to the first face and including a first trench, a second trench, and a third trench provided on a first face side; a first gate electrode in the first trench; a second gate electrode in the second trench; a third gate electrode in the third trench; a fourth gate electrode and a fifth gate electrode provided on a second face side; a first electrode contacting the first face; a second electrode contacting the second face; a first electrode pad electrically connected to the first gate electrode; a second electrode pad electrically connected to the second gate electrode; a third electrode pad electrically connected to the third gate electrode; a fourth electrode pad electrically connected to the fourth gate electrode; and a fifth electrode pad electrically connected to the fifth gate electrode.

IPC Classes  ?

• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H03K 17/567 - Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

A voltage of a third gate electrode of a first semiconductor device transitions from a first off-voltage that is not more than a threshold voltage to a second off-voltage lower than the first off-voltage during a period from when a pulse signal for turning off a first gate electrode and a second gate electrode of the first semiconductor device is input to a drive device to when any one of a first gate electrode, a second gate electrode, and a third gate electrode of a second semiconductor device reaches an on-voltage.

IPC Classes  ?

• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched

Abstract

An inductor includes a magnetic member comprising a first core, a second core, a third core, and a connecting portion connecting the first core, the second core and the third core; a first winding wound around the first core; a second winding wound around the second core; and a third winding wound around the third core and connected between the first winding and the second winding. A direction of a magnetic flux generated in the third core by a current flowing through the first winding and a direction of a magnetic flux generated in the third core by a current flowing through the second winding are opposite to each other.

IPC Classes  ?

• H01F 27/30 - Fastening or clamping coils, windings, or parts thereof together; Fastening or mounting coils or windings on core, casing, or other support
• H01F 27/26 - Fastening parts of the core together; Fastening or mounting the core on casing or support
• H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only

Abstract

According to an embodiment, a tray for a physical distribution sorter includes a frame body, first and second pulleys, first and second rotating plates, and a wire. The frame body moves in a predetermined direction on a track of the physical distribution sorter. The first and second pulleys rotate about a predetermined axis with respect to the frame body. The first rotating plates rotate with rotation of the first pulley. The second rotating plate rotates with rotation of the second pulley. The wire is wound around the first and second pulleys. When the wire is unwound from the second pulley and wound around the first pulley, the first and second rotating plates rotate and close. When the wire is unwound from the first pulley and wound around the second pulley, the first and second rotating plates rotate and open in a double-open manner.

IPC Classes  ?

• B65G 17/34 - Individual load-carriers having flat surfaces, e.g. platforms, grids, forks
• B65G 47/51 - Devices for discharging articles or materials from conveyors with distribution, e.g. automatically, to desired points according to unprogrammed signals, e.g. influenced by supply situation at destination
• B65G 47/61 - Devices for transferring articles or materials between conveyors, i.e. discharging or feeding devices to or from conveyors of the suspended, e.g. trolley, type for articles

Abstract

According to one embodiment, a magnetic head comprises a main pole, an auxiliary magnetic pole provided with the main pole with a write gap therebetween, and a multi-layer provided between the main pole and the auxiliary magnetic pole, by which electric conductivity is enabled from the main pole to the auxiliary magnetic pole. The multi-layer includes a first cooling layer and a first conductive layer, orderly provided on a surface of the main pole opposed to the auxiliary magnetic pole, and the first cooling layer cools the main pole by Peltier effect when electric current is applied, and a length thereof in a track width is longer than a length in a track width of the main pole.

IPC Classes  ?

• G11B 5/127 - Structure or manufacture of heads, e.g. inductive
• G11B 5/00 - Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor

Abstract

According to an embodiment, a magnetic disk is provided with a servo sector in which a preamble and a burst pattern are recorded. A recording frequency of the preamble is different from an even multiple of a recording frequency of the burst pattern. A controller determines a demodulation period of the burst pattern while a magnetic head passes through the servo sector. The controller acquires a first phase of a demodulation signal of the burst pattern and acquires first position information of the magnetic head, by demodulating the burst pattern in the demodulation period. The controller corrects the first position information on the basis of the first phase. The controller executes positioning control of the magnetic head on the basis of second position information that is post-correction first position information.

IPC Classes  ?

• G11B 5/596 - Disposition or mounting of heads relative to record carriers with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on disks

Abstract

A method for performing disk access operations in a disk drive includes: storing commands to perform disk access operations in a command queue for the disk drive; determining a first total cost for performing a first command stored in the command queue, wherein the first total cost is based on at least a first energy cost associated with starting execution of the first command; determining a second total cost for performing a second command stored in the command queue, wherein the second total cost is based on at least a second energy cost for the second command; and in response to determining that the first total cost is less than the second total cost, selecting the first command to be the next command stored in the command queue that is to be performed by the disk drive.

IPC Classes  ?

• G06F 3/06 - Digital input from, or digital output to, record carriers

Abstract

A processing system includes an imaging part, a detecting part, an identifying part, a tracking part, and a calculator. The imaging part acquires an image by imaging a work site from above. The detecting part detects a person visible in the image and acquires a coordinate of the person in the image. The identifying part identifies the person and associates identification information with the detected person. The tracking part tracks the person associated with the identification information by using the coordinate. The calculator calculates a dwell time of the person in a work area set in the work site by using a result of the tracking.

IPC Classes  ?

• G06V 20/52 - Surveillance or monitoring of activities, e.g. for recognising suspicious objects
• G06T 5/50 - Image enhancement or restoration by the use of more than one image, e.g. averaging, subtraction
• G06T 7/20 - Analysis of motion
• G06V 10/74 - Image or video pattern matching; Proximity measures in feature spaces

Abstract

A communication device includes a storage, and one or more hardware processors. The storage stores, for each of a plurality of servers, setting information including identification information of the server, authentication information used for connecting to the server, permission information indicating permitted communication with the server, and a priority. The hardware processors select, based on the priority, a first server that is one of the servers. The hardware processors perform, according to the permission information for the first server, communication with the first server that is connected based on the identification information and the authentication information.

IPC Classes  ?

• H04L 9/40 - Network security protocols
• H04L 69/40 - Network arrangements, protocols or services independent of the application payload and not provided for in the other groups of this subclass for recovering from a failure of a protocol instance or entity, e.g. service redundancy protocols, protocol state redundancy or protocol service redirection

Abstract

In an embodiment, in a processing method for a battery, whether a target battery is regenerable without separating an electrode active material serving as a positive electrode active material and an electrode active material serving as a negative electrode active material of the target battery from an electrode group, based on the analysis result of measurement data for the target battery.

IPC Classes  ?

• H01M 10/54 - Reclaiming serviceable parts of waste accumulators
• H01M 10/42 - Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells

Abstract

According to one embodiment, a radar device includes an oscillator configured to generate a reference signal, a first unit group, and a second unit group. The first unit group includes first and second units configured to transmit/receive based on a reference signal. The second unit group includes third and fourth units configured to transmit/receive based on the reference signal. The first and third units are connected to the oscillator via first and second signal lines, respectively. The second and fourth units are connected to the first and third units via third and fourth signal lines, respectively.

IPC Classes  ?

• G01S 7/40 - Means for monitoring or calibrating

Abstract

A semiconductor device includes a conductive member, a solder layer, a chip, a coating film, an insulating part, and a sealing resin. The solder layer is located on the conductive member. The chip is located on the solder layer. The coating film is insulative. The coating film is located on the chip. The coating film includes a first covering part. The first covering part covers an outer perimeter edge of an upper surface of the chip. The insulating part is located on the coating film. The sealing resin seals the solder layer, the chip, the coating film, and the insulating part.

IPC Classes  ?

• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 21/784 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being a semiconductor body
• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices

Abstract

According to one embodiment, a transmitting device includes an encryption key pre-fetching unit and an encryption chunk generation unit. The encryption key pre-fetching unit acquires the encryption key for encrypting plaintext data from a key management system before receiving the plaintext data. The encryption chunk generation unit generates a packet in which first encrypted data acquired by encrypting first plaintext data using a first encryption key and a first key ID of the first encryption key are stored, and a second key ID of a second encryption key used for encrypting second plaintext data transmitted after the first plaintext data, is embedded. A receiving device includes an encryption chunk analysis unit and a decryption key pre-fetching unit. The encryption chunk analysis unit analyzes the packet and reads the second key ID. The decryption key pre-fetching unit acquires the second encryption key corresponding to the second key ID read by the encryption chunk analysis unit from the key management system.

IPC Classes  ?

• H04L 9/08 - Key distribution

Abstract

Provided is an examination method wherein a measurement target is produced in a reaction field within a container and reacted with a reagent to cause light emission which is received, and the optical characteristics thereof detected by a detection unit. The reaction field contains a plurality of pieces in a solution in which the reagent dissolves, the pieces being capable of adsorbing the reagent and gradually releasing the adsorbed reagent for reaction with the measurement target. The container is arranged on the detection unit such that the detection unit faces the reaction field.

IPC Classes  ?

• C12M 1/34 - Measuring or testing with condition measuring or sensing means, e.g. colony counters
• C12M 1/00 - Apparatus for enzymology or microbiology
• C12M 1/12 - Apparatus for enzymology or microbiology with sterilisation, filtration, or dialysis means
• C12Q 1/6897 - Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids involving reporter genes operably linked to promoters
• D01D 5/00 - Formation of filaments, threads, or the like
• G01N 21/64 - Fluorescence; Phosphorescence

Abstract

According to one embodiment, an antenna device includes a waveguide. The waveguide includes a feed point, and a first region around the feed point. The waveguide is configured to guide a high-frequency signal supplied to the feed point. The waveguide includes a plurality of radiating parts located in the first region. The first region includes a first partial region and a second partial region. The feed point is between the first partial region and the second partial region. A first waveguide wavelength in the waveguide in the first partial region is less than a second waveguide wavelength in the waveguide in the second partial region.

IPC Classes  ?

• H01Q 13/26 - Surface waveguide constituted by a single conductor, e.g. strip conductor
• H01Q 3/04 - Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system using mechanical movement of antenna or antenna system as a whole for varying one co-ordinate of the orientation
• H01Q 3/14 - Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system using mechanical relative movement between primary active elements and secondary devices of antennas or antenna systems for varying the relative position of primary active element and a refracting or diffracting device

Abstract

A learning control device according to one embodiment includes a memory and a hardware processor. The memory stores a correction value to be used in a learning trial. The processor generates a feedback signal on the basis of a tracking error for a target state of a control target. The feedback signal is used for causing an operation result state of the control target to track the target state. The feedback signal is generated such that a control target waveform of transition of an output signal representing the operation result state becomes a waveform obtained by calculating a coefficient on the whole of a base control target waveform. The processor outputs, to a feedback communication path, a calculation result obtained by calculating the coefficient on the correction value. The processor updates the correction value stored in the memory in accordance with a signal communicated through the feedback communication path.

IPC Classes  ?

• G05B 13/02 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
• G05B 23/02 - Electric testing or monitoring

Abstract

According to one embodiment, an antenna device includes a first antenna part, a first power divider, and a first control circuit. The first antenna part includes first antenna elements, first phase shifters for left-handed circular polarized wave, and first phase shifters for right-handed circular polarized wave. The plurality of first antenna elements performs a first transmitting operation of transmitting a transmitting-left-handed circularly polarized wave, and a second transmitting operation of transmitting a transmitting-right-handed circularly polarized wave. The first power divider is couplable with the plurality of first phase shifters for left-handed circular polarized wave and the plurality of first phase shifters for right-handed circular polarized wave. The first control circuit controls phase shift amounts of the plurality of first phase shifters for left-handed circular polarized wave and controls phase shift amounts of the plurality of first phase shifters for right-handed circular polarized wave.

IPC Classes  ?

• H01Q 1/22 - Supports; Mounting means by structural association with other equipment or articles
• H01Q 1/44 - ANTENNAS, i.e. RADIO AERIALS - Details of, or arrangements associated with, antennas using equipment having another main function to serve additionally as an antenna
• H01Q 23/00 - Antennas with active circuits or circuit elements integrated within them or attached to them

Abstract

A friction stir welding tool member including: a shoulder portion; and a probe portion. A helical concavo-convex portion including a ridge and a valley is provided on a side peripheral surface of the probe portion. In a cross-section passing through a rotation axis of the probe portion, a differential rate of areas of valley parts adjacent along an axis parallel to the rotation axis out of the valley is within a range of 5% or more and 30% or less. A difference between pitches of ridge parts adjacent along the axis parallel to the rotation axis out of the ridge is preferably within a range of 0.01 mm or more and 0.2 mm or less. A difference between depths of valley parts adjacent along the axis parallel to the rotation axis out of the valley is preferably within a range of 0.01 mm or more and 0.1 mm or less.

IPC Classes  ?

• B23K 20/12 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding

Abstract

According to one embodiment, a treatment solution is provided. The treatment solution is used for treating halosilanes having a cyclic structure. The treatment solution includes at least one of an inorganic base or an organic base and being basic.

IPC Classes  ?

• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• A62D 3/36 - Detoxification by using acid or alkaline reagents
• A62D 101/40 - Inorganic substances
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
• C23C 16/56 - After-treatment
• C30B 19/10 - Controlling or regulating
• C30B 19/12 - Liquid-phase epitaxial-layer growth characterised by the substrate
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

In an embodiment, a package conveyance apparatus includes first, second, and third side-alignment conveyors each receiving packages conveyed in an irregularly arranged state in a conveyance direction and a direction intersecting the conveyance direction. The first, second, and third side-alignment conveyors convey the packages in first, second, and third conveyance directions while side-aligning the packages in first, second, and third directions, respectively. The package conveyance apparatus includes first, second, and third auxiliary conveyance belts provided on respective side-alignment direction sides of the first, second, and third side-alignment conveyors, applying conveyance force to the packages in the first, second, and third directions, respectively, and differing in conveyance speeds from the first, second, and third side-alignment conveyors, respectively.

IPC Classes  ?

• B65G 47/31 - Devices influencing the relative position or the attitude of articles during transit by conveyors arranging the articles, e.g. varying spacing between individual articles during transit by a series of conveyors by varying the relative speeds of the conveyors forming the series

Abstract

In one embodiment, a thermal energy storage power plant includes a thermal accumulator to accumulate thermal energy and heat a thermal medium with the thermal energy, and a steam generator to generate steam using the thermal medium. The plant further includes a first path to convey the thermal medium from the accumulator to the generator, and a second path to convey the thermal medium from the generator to the accumulator. The plant further includes an auxiliary module provided on the first path, and a bypass path to convey the thermal medium flowing through the second path to the auxiliary module by bypassing the accumulator, wherein the auxiliary module is supplied with a first thermal medium from the accumulator via the first path, supplied with a second thermal medium from the second path via the bypass path, and supplies a third thermal medium to the generator via the first path.

IPC Classes  ?

• F01K 3/08 - Use of accumulators, the plant being specially adapted for a specific use
• F01K 3/18 - Plants characterised by the use of steam or heat accumulators, or intermediate steam heaters, therein having heaters
• F01K 15/00 - Adaptations of steam engine plants for special use

Abstract

According to one embodiment, an antenna device includes a transmitting antenna including a plurality of transmitting elements, and a receiving antenna including a plurality of receiving elements. A maximum value of a mutual coupling between the plurality of receiving elements is less than a maximum value of a mutual coupling between the plurality of transmitting elements.

IPC Classes  ?

• G01S 7/35 - RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - Details of systems according to groups , , of systems according to group - Details of non-pulse systems
• G01S 7/02 - RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - Details of systems according to groups , , of systems according to group
• H01Q 5/49 - Combinations of two or more dipole type antennas with parasitic elements used for purposes other than for dual-band or multi-band, e.g. imbricated Yagi antennas
• H01Q 13/10 - Resonant slot antennas

Abstract

According to one embodiment, a magnetic recording device includes a magnetic recording medium group and a magnetic head group. The magnetic recording medium group includes a first magnetic recording medium, a plurality of second magnetic recording media, and a plurality of third magnetic recording media. The magnetic head group includes a first magnetic head, a plurality of second magnetic heads, and a plurality of third magnetic heads. The first magnetic head is configured to record data on the first magnetic recording medium by a first method. One of the plurality of second magnetic heads is configured to record data on one of the plurality of second magnetic recording media by a second method different from the first method. One of the plurality of third magnetic heads is configured to record data on one of the plurality of third magnetic recording media by the second method.

IPC Classes  ?

• G11B 5/00 - Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
• G11B 5/012 - Recording on, or reproducing or erasing from, magnetic disks
• G11B 5/48 - Disposition or mounting of heads relative to record carriers
• G11B 13/08 - Recording simultaneously or selectively by methods or means covered by different main groups; Record carriers therefor; Reproducing simultaneously or selectively therefrom using near-field interactions or transducing means and at least one other method or means for recording or reproducing
• G11B 33/14 - Reducing influence of physical parameters, e.g. temperature change, moisture, dust