An ultraviolet light fluid treatment device that can enhance treatment effects is provided. The ultraviolet light fluid treatment device includes an inlet and an outlet of fluid; a flow channel connecting the inlet and the outlet and including a plurality of branch flow channels branching from the inlet, and a merged flow channel connected to a downstream side of each of the branch flow channels; a first light source configured to emit ultraviolet light to the merged flow channel; and a plurality of second light sources configured to emit the ultraviolet light to the plurality of respective branch flow channels.
B01J 19/12 - Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
C02F 1/32 - Treatment of water, waste water, or sewage by irradiation with ultraviolet light
Provided is a method of treating a post-harvest plant after harvest, the method in- cluding: irradiating a harvested plant with light having a peak wavelength in a wavelength range from 270 to 290 nm and/or light having a peak wavelength in a wavelength range from 370 to 400 nm at an irradiance effective to increase an amount of at least one rare cannabinoid compound and/or at least one terpene compound in the harvested plant, wherein an irradiance of light of all wavelengths in a wavelength range from 410 to 700 nm received by the harvested plant during the irradiation is less than 20% of the irradiance of the light having a peak wavelength in the wavelength range from 270 to 290 nm and/or less than 20% of the irradiance of the light having a peak wavelength in the wavelength range from 370 to 400 nm.
A23N 15/00 - Machines or apparatus for other treatment of fruits or vegetables for human purposes; Machines or apparatus for topping or skinning flower bulbs
A23L 5/00 - Preparation or treatment of foods or foodstuffs, in general; Food or foodstuffs obtained thereby; Materials therefor
A23L 33/105 - Plant extracts, their artificial duplicates or their derivatives
A light emitting device manufacturing method includes: disposing n pieces of light emitting elements in m rows on a substrate block, where an interval between a kth light emitting element from one end of rows and a (k+1)th light emitting element has a first distance; disposing a phosphor member on the light emitting elements; disposing a frame member to surround the light emitting elements; disposing a cover member in each area surrounded by the frame member to cover lateral surfaces of the light emitting elements and the phosphor members while forming recesses at an upper surface between the kth light emitting elements and the (k+1)th light emitting elements apart by the first distance; disposing a light shielding member in each recess; and cutting the light shielding members, the cover members, and the substrate block between the light emitting elements that are apart by the first distance.
F21S 41/40 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades
F21K 9/60 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
A light emitting device includes: one or more semiconductor laser elements, each configured to emit laser light; one or more light-reflecting parts, each having a light-reflecting surface configured to reflect the laser light emitted from a corresponding one of the one or more semiconductor laser elements; and a fluorescent part having a light-receiving surface configured to be irradiated with the laser light reflected at the light-reflecting surface of each of the one or more light-reflecting parts; wherein an irradiated region is formed on the light-reflecting surface when the light- reflecting surface is irradiated with the laser light, the irradiated region including a first end and a second end opposite the first end; and wherein the light-reflecting surface of each of the one or more light-reflecting parts is arranged such that a portion of the laser light reflected at at least a first end of the irradiated region and a portion of the laser light reflected at a location other than the first end of the irradiated region are overlapped with each other on the light-receiving surface.
F21K 9/60 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
F21K 9/00 - Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
F21K 9/68 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction - Details of reflectors forming part of the light source
An object of the present invention is to provide a method that can effectively/efficiently increase the amount of a phenolic compound such as a polyphenol. The invention provides a method for increasing an amount of a phenolic compound in a plant, or a method for producing a plant containing an increased amount of a phenolic compound, the method comprising irradiating the/a plant with ultraviolet light, wherein a fluence at wavelengths of 270 to 290 nm is 1500 to 50000 µmol/m2 and a fluence at wavelengths of 310 to 400 nm is less than 50% of that at wavelengths of 270 to 290 nm.
NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY (Japan)
OSAKA UNIVERSITY (Japan)
NICHIA CORPORATION (Japan)
Inventor
Torimoto, Tsukasa
Kameyama, Tatsuya
Kishi, Marino
Miyamae, Chie
Kuwabata, Susumu
Uematsu, Taro
Oyamatsu, Daisuke
Niki, Kenta
Abstract
Provided is a semiconductor nanoparticle that demonstrates band-edge luminescence and that has a short light emission peak wavelength. The semiconductor nanoparticle comprises Ag, In, Ga and S, and the ratio of the number of Ga atoms to the total number of In atoms and Ga atoms is 0.95 or less. Moreover, the semiconductor nanoparticle has a light emission peak wavelength within a range between at least 500 nm and less than 590 nm, and emits light having a light emission peak half-width of 70 nm or less. The average particle size is 10 nm or less.
An optical component includes: a light transmissive member having an upper face, a lower face, and at least one lateral face; and a light reflecting member that surrounds the at least one lateral face of the light transmissive member, wherein the light reflecting member is made of a ceramic that contains a plurality of pores, and wherein the plurality of pores are localized in a vicinity of the light transmissive member in a cross section that extends through the light transmissive member and the light reflecting member.
G02B 1/02 - Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semiconductors
G02B 17/00 - Systems with reflecting surfaces, with or without refracting elements
C04B 35/00 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
8.
LIGHT-EMITTING DEVICE AND PACKAGE FOR LIGHT-EMITTING DEVICE
A light-emitting device includes a base body; light-emitting elements mounted on an upper surface of the base body; a frame body bonded to the upper surface of the base body, the frame body including inner lateral surfaces, outer lateral surfaces, and first through-holes that extend through the frame body in a lateral direction; lead terminals that extend through the first through-holes, and each of which is electrically connected to the light-emitting elements; a cover bonded to the frame body; plate bodies bonded to an outer lateral surface or inner lateral surface of the frame body, each of the plate bodies having one or more second through-holes, wherein each of the lead terminals extends through a respective through-hole; and fixing members, each of which is disposed in a second through-hole and fixes a respective one of the one or more lead terminals.
A light-emitting device includes a base including a conductive wiring; a light-emitting element mounted on the base and configured to emit light; a light reflective film provided on an upper surface of the light-emitting element; and a encapsulant covering the light-emitting element and the light reflective film. A ratio (H/W) of a height (H) of the encapsulant to a width (W) of a bottom surface of the encapsulant is less than 0.5.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/54 - Encapsulations having a particular shape
A light emitting device includes a light emitting element adapted to emit blue light, quantum dots that absorb part of the blue light emitted from the light emitting element to emit green light, and at least one of a KSF phosphor adapted to absorb part of the blue light emitted from the light emitting element to emit red light and a MGF phosphor adapted to absorb part of the blue light emitted from the light emitting element to emit red light.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
A light emitting device includes a light emitting element adapted to emit blue light, quantum dots that absorb part of the blue light emitted from the light emitting element to emit green light, and at least one of a KSF phosphor adapted to absorb part of the blue light emitted from the light emitting element to emit red light and a MGF phosphor adapted to absorb part of the blue light emitted from the light emitting element to emit red light.
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
A light emitting device includes a substrate member and at least one light emitting element. The substrate member has a groove portion defined between two wiring portions spaced apart from each other. The groove portion includes a first groove portion, a second groove portion, and a third groove portion. The first groove portion extends in a direction that forms a slanted angle with respect to a first direction, the second groove portion is spaced apart from the first groove and extends in a direction that forms a slanted angle with respect to the first direction, and the third groove portion is interconnected with the first groove portion and the second groove portion. The light emitting element is disposed over the third groove portion.
F21S 4/20 - Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports
F21S 4/26 - Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports flexible or deformable, e.g. into a curved shape of rope form, e.g. LED lighting ropes, or of tubular form
F21V 19/00 - Fastening of light sources or lamp holders
F21V 33/00 - Structural combinations of lighting devices with other articles, not otherwise provided for
A semiconductor light emitting device, has a package constituted by the lamination of a first insulating layer having a pair of positive and negative conductive wires formed on its upper face, an inner-layer wire below the first insulating layer, and a second insulating layer below the inner-layer wire; a semiconductor light emitting element that has a pair of positive and negative electrodes on the same face side and that is disposed with these electrodes opposite the conductive wires; and a sealing member that covers the semiconductor light emitting element, wherein part of the conductive wires is formed extending in the outer edge direction of the sealing member from directly beneath the semiconductor light emitting element, on the upper face of the first insulating layer, and is connected to the inner-layer wire via a conductive wire disposed in the thickness direction of the package, and the inner-layer wire is disposed so as to be spaced apart from the outer periphery of the semiconductor light emitting element in a see-through view of the package from the upper face side of the first insulating layer.
A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A join region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.
H01S 5/323 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
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