Polypropylene-based resin foamed particles (1) each include a foamed layer formed of a polypropylene-based resin composition. The polypropylene-based resin composition forming the foamed layer contains a polypropylene-based resin and rubbery bodies (G) containing an ethylene propylene-based rubber. The rubbery bodies are dispersed in the polypropylene-based resin. The foamed particles (1) have a melting point Tm of 130-162°C.
The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition which is capable of forming a film that has excellent bending resistance; a composition; and a polymer. This method for producing a semiconductor substrate comprises: a step for applying a resist underlayer film-forming composition directly or indirectly to a substrate; a step for forming a resist pattern directly or indirectly on the resist underlayer film that has been formed in the application step; and a step for performing etching using the resist pattern as a mask. With respect to this method for producing a semiconductor substrate, the resist underlayer film-forming composition contains a solvent and a polymer that has a structural unit represented by formula (1). (In formula (1), Ar1represents a divalent group that has an aromatic ring having 5 to 40 ring members; and X1represents a divalent group represented by formula (i).) (In formula (i), R1and R2 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, or these groups combine with each other to form a C3-20 divalent alicyclic hydrocarbon group together with the carbon atom to which these are bonded; and * and ** each denote a bonding hand in formula (1).)
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08G 8/02 - Condensation polymers of aldehydes or ketones with phenols only of ketones
The purpose of the present invention is to provide a method for forming a resist pattern having excellent pattern rectangularity. Provided is a method for forming a resist pattern, the method comprising: a step for applying a resist underlayer film-forming composition onto a substrate directly or indirectly; a step for forming a metal-containing resist film on the resist underlayer film formed by the resist underlayer film-forming composition application step; a step for exposing the metal-containing resist film to light; a step for preparing a developer solution; and a step for dissolving a light-exposed part in the metal-containing resist film that has been exposed to light using the developer solution to form a resist pattern.
C08F 232/08 - Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Provided are: a resist underlayer film-forming composition which enables the formation of a resist underlayer film having excellent resist pattern rectangularity when the composition is exposed to extreme ultraviolet ray; and a method for manufacturing a semiconductor substrate using the composition. The resist underlayer film-forming composition is a composition for forming an underlayer film for a resist film which is subjected to the exposure to extreme ultraviolet ray, the composition comprising a compound having a iodine atom and a solvent, in which the compound having a iodine atom is a polymer having a repeating unit represented by formula (1), an aromatic-ring-containing compound having a iodine atom and having a molecular weight of 750 to 3000 inclusive, or a combination thereof, and the content ratio of the compound having a iodine atom in components other than the solvent in the underlayer film-forming composition is 50% by mass or more. (In formula (1), Ar1represents a bivalent group having a 5- to 40-membered aromatic ring; R0represents a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms; and R1represents a monovalent organic group having 1 to 40 carbon atoms; in which at least one of Ar1, R0and R1 has a iodine atom.)
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Provided is a vector or vector set for analyzing the function of a functional molecule, said vector or vector set comprising: a polynucleotide that codes for an expression system of a candidate molecule for the functional molecule; a polynucleotide that codes for a translation control sequence or a transcription control sequence which is activated by a response in a given cell; and a polynucleotide that codes for a reporter system which is operably linked with the translation control sequence or the transcription control sequence. Also provided is a searching method for a functional molecule which causes a response in a cell, said method comprising: introducing the vector or vector set into a cell; and measuring expression in the cell of a reporter system included in the vector or vector set.
Provided are an antibacterial composition containing bacteria that exhibit antibacterial properties against bacteria having a positive correlation with a SCORAD value indicating the severity of atopic dermatitis, and a method for determining the administration of said antibacterial composition to a subject. The present invention comprises an antibacterial composition that contains resident skin bacteria as an active ingredient, the antibacterial composition acting against pro-inflammatory bacteria (excluding the resident skin bacteria).
C12Q 1/689 - Nucleic acid products used in the analysis of nucleic acids, e.g. primers or probes for detection or identification of organisms for bacteria
8.
RADIATION-SENSITIVE COMPOSITION, RESIST-PATTERN-FORMING METHOD, RADIATION-SENSITIVE ACID GENERATOR AND POLYMER
This radiation-sensitive composition comprises a polymer having an acid-dissociable group and a compound represented by formula (1). In formula (1), R5is a group obtained by removing (m+n+2) hydrogen atoms from a monocyclic or condensed aromatic hydrocarbon ring having r carbon atoms. L−33 −or –COO−. r is an integer of 6 to 14. A1is a single bond, –O–, –S– or –NR3–. R1is a hydrogen atom or a monovalent organic group. X1is a chlorine atom, a bromine atom or an iodine atom. m is an integer of 1 to (r–2). N is an integer of 0 to (r–3). R2is a substituted or unsubstituted monovalent hydrocarbon. M+ is a monovalent cation.
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
C08F 220/12 - Esters of monohydric alcohols or phenols
Provided are: a radioactive-ray-sensitive resin composition that can exhibit sufficient levels of sensitivity and CDU performance when a next-generation technology is applied to the composition; and a pattern formation method. The radioactive-ray-sensitive resin composition comprises an onium salt compound containing a structure represented by formula (1), a resin containing a structure unit (I) having a phenolic hydroxyl group or a group capable of providing a phenolic hydroxyl group by the action of an acid, and a solvent. (In formula (1), Rf1and Rf2each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a fluorine atom, or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms; R1, R2and R3122 each independently represent an integer of 0 to 4; X1and X2each independently represent an oxygen atom or a sulfur atom: L represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 10 carbon atoms; R4and R5each independently represent a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms; at least one of R4and R5represents a monovalent aromatic-ring-containing organic group containing a 5- to 40-membered aromatic ring; and Z+ represents a monovalent radioactive-ray-sensitive onium cation.)
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
C08F 220/12 - Esters of monohydric alcohols or phenols
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
The present invention pertains to a method for producing foamable particles by using, as a base resin material, a mixture obtained by mixing a polypropylene-based resin A which is not a recovered material and a polypropylene-based resin B which is a recovered object of a post consumption material. Provided is a foamable particle production method that makes it possible to produce foamable particles in which variability in the foam expansion rate and reduction in the closed-cell rate are suppressed, and to have excellent appearance for a foamable particle molded body obtained by molding said foamable particles. In the foamable particle production method: a mixture obtained by mixing a polypropylene-based resin A having a melting point of 130-155°C and a polypropylene-based resin B which is a recovered object of a post consumption material is used as a base resin material; in the mixture, the blended proportion of the polypropylene-based resin A is 40-97 wt% and the blended proportion of the polypropylene-based resin B is 3-60 wt% (the total of the polypropylene-based resin A and the polypropylene-based resin B is 100 wt%); the melting point difference (melting point of the polypropylene-based resin B - melting point of the polypropylene-based resin A) between the polypropylene-based resin A and the polypropylene-based resin B is 10-30°C; the ash content of the polypropylene-based resin B is 5 wt% or less with respect to 100 wt% of the polypropylene-based resin B; and, regarding a melt peak indicated in a DSC curve obtained through thermal flux differential scanning calorimetry of the polypropylene-based resin B, the difference (Tme-Tms) between an extrapolated melting start temperature (Tms) and an extrapolated melting ending temperature (Tme) of the melt peak is 30°C or higher.
One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, and an electronic device. The polymer has a repeating structural unit represented by formula (1). [R11represents a divalent substituted or unsubstituted nitrogen-containing heteroaromatic ring, R12independently represent a divalent substituted or unsubstituted aromatic hydrocarbon group, R13represents a C1-20 hydrocarbon group to which at least one group represented by formula (a1) other than the two R12is bonded, X1independently represent -O-, -S-, or -N(R14)-, * represents a bond to R13, and ** represents a bond with another structural unit in polymer (A).]
C08G 65/34 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
One embodiment of the present invention relates to a polymer, a composition, a cured product, or a display element. The composition comprises a polymer having a structural unit represented by formula (1). [In formula (1), A is a divalent group having an aromatic heterocyclic ring, B is a divalent group having an aromatic ring or an aromatic heterocyclic ring and having an alkali-soluble group, and X is independently -O-, -NH- or -S-.]
C08L 101/02 - Compositions of unspecified macromolecular compounds characterised by the presence of specified groups
C08G 65/34 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
G03F 7/023 - Macromolecular quinonediazides; Macromolecular additives, e.g. binders
G03F 7/032 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
13.
COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD
Provided are: a composition for chemical mechanical polishing; and a polishing method using the same. The composition allows rapid polishing of a polishing surface that contains a silver material for wiring, and makes it possible to obtain a polished surface having a high reflective property. This composition for chemical mechanical polishing comprises (A) abrasive grains, (B) a liquid medium, (C) an oxidizing agent, and (D) a nitrogen-containing hetrocyclic compound. The absolute value of the zeta potential of the (A) component of the composition for chemical mechanical polishing is 10 mV or more. When the content of the (C) component is noted as Mc (mass%) and the content of the (D) component is noted as Md (mass%), Mc/Md is 10 to 200.
A microbial carrier for a food waste treatment, wherein: a base resin constituting the microbial carrier contains a thermoplastic starch and/or an aliphatic polyester; the biodegradability of the microbial carrier in a biodegradability test according to JIS K6953 is 60% or more; and the shape of the microbial carrier is columnar.
C08J 9/04 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent
C12N 1/00 - Microorganisms, e.g. protozoa; Compositions thereof; Processes of propagating, maintaining or preserving microorganisms or compositions thereof; Processes of preparing or isolating a composition containing a microorganism; Culture media therefor
16.
MANUFACTURING METHOD FOR CONDUCTIVE FILM, LIQUID DISPERSION, RADIATION-SENSITIVE RESIN COMPOSITION, AND LIGHT EMITTING ELEMENT
The present invention provides a manufacturing method for a conductive film that has high conductivity and makes it possible to evenly fix a conductive carbon material over the entirety of a conductive film formation region. The present invention also provides a manufacturing method wherein it is possible to efficiently remove a dispersant that has remained in the conductive film, as well as a polymer that is in a section where a radiation-sensitive resin composition has not been subjected to light exposure. The present invention includes: a step (A) in which a liquid dispersion is applied on a main surface of a substrate and dried to form a first film, said liquid dispersion including a carbon material and a first polymer that has one type of functional group among a carboxyl group, a hydroxyl group, and a phenolic hydroxyl group; a step (B) in which a radiation-sensitive resin composition is applied on the first film to form a second film, said radiation-sensitive resin composition having an acid generating agent and a second polymer that has one type of functional group among a carboxyl group, a hydroxyl group, and a phenolic hydroxyl group; a step (C) in which the second film is exposed to light; and a step (D) in which, after the step (C), the first polymer and the second polymer are removed by developing.
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
B05D 1/36 - Successively applying liquids or other fluent materials, e.g. without intermediate treatment
B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
C09D 179/08 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
H05B 33/28 - Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
H10K 50/10 - OLEDs or polymer light-emitting diodes [PLED]
17.
ADDITIVES FOR METAL OXIDE PHOTORESISTS, POSITIVE TONE DEVELOPMENT WITH ADDITIVES, AND DOUBLE BAKE DOUBLE DEVELOP PROCESSING
A method for patterning a radiation sensitive material on a substrate involves the development of a material on a substrate based on a latent image in the material with irradiated regions and non-irradiated regions to form a physically patterned material on the substrate, in which the material comprises an organotin radiation sensitive patterning material and an additive. The additive is a photoacid generator, a quencher or a mixture thereof. Patterning improvements can be achieved using a series of a baking and development step followed by a second baking at a higher temperature and a second development step following the second baking step. A precursor solution for forming an organometallic radiation patterning material can comprise an organic solvent, a dissolved organotin composition having C-Sn bonds that can cleave in response to EUV radiation, and a quencher. The additive can comprise an onium cation.
Provided are a semiconductor substrate production method and film forming composition which are capable of forming a film having excellent etching resistance and excellent embedding properties. This semiconductor substrate production method involves a step for applying a film forming composition onto a substrate, wherein the film forming composition contains a metal compound, an aromatic compound, and a solvent; the aromatic compound has an aromatic hydrocarbon ring structure and a partial structure represented by formula (1) below; and the aromatic hydrocarbon ring structure has 6 or more carbon atoms. [Formula 1] (In formula (1), X is a group represented by formula (i), (ii), (iii), or (iv) below; and symbols * are sites binding respectively to adjacent two carbon atoms constituting the aromatic hydrocarbon ring structure.) [Formula 2] (In formula (i), R1is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms, and R2is a monovalent organic group having 1-20 carbon atoms. In formula (ii), R3is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms, and R4is a monovalent organic group having 1-20 carbon atoms. In formula (iii), R5is a monovalent organic group having 1-20 carbon atoms. In formula (iv), R6 is a monovalent organic group having 1-20 carbon atoms.)
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
The purpose of the present invention is to provide a method for manufacturing a semiconductor substrate using a composition capable of forming a film having excellent etching resistance; and to provide said composition. The composition according to the present invention comprises a solvent and a compound having a partial structure represented by formula (1) below, wherein the molecular weight of the compound is greater than or equal to 600. (In formula (1), Ar1is a substituted or unsubstituted monovalent aromatic group having 5-30 ring members. n is an integer of 1-3. Ar2is a portion of a substituted or unsubstituted aromatic ring structure having 5-60 ring members and is formed together with two adjacent carbon atoms in formula (1). X1 represents a single bond or a divalent linking group .Each * is a bonding site with the two adjacent carbon atoms constituting the substituted or unsubstituted aromatic ring having 5-60 ring members. ** is a bonding site with a portion other than the partial structure represented by formula (1) in the abovementioned compound. r is an integer of 0-4.)
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C07C 13/58 - Completely or partially hydrogenated anthracenes
C07C 13/62 - Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with more than three condensed rings
C07C 13/66 - Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with more than three condensed rings the condensed ring system contains only four rings
C07C 39/17 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings containing other rings in addition to the six-membered aromatic rings
The present invention provides a carrier which is for chromatography, which has a large dynamic binding capacity with respect to an antibody or a fragment thereof, and through which a protein ligand is unlikely to leak even when the carrier is repeatedly used for isolation of an antibody. Provided is a method for producing a carrier for chromatography, said method comprising the following steps A-1 and B. (Step A-1) A step for immobilizing, to porous particles, one or more ligands selected from protein A, protein G, protein L, and analogues thereof. (Step B) A step for reacting the porous particles to which the one or more ligands have been immobilized in the step A-1 and a compound which has at least one ligand reactive group selected from groups represented by -C(=O)-O-C(=O)-, carbodiimide groups, and cyclic ether groups.
C07K 1/22 - Affinity chromatography or related techniques based upon selective absorption processes
C07K 16/00 - Immunoglobulins, e.g. monoclonal or polyclonal antibodies
B01D 15/38 - Selective adsorption, e.g. chromatography characterised by the separation mechanism involving specific interaction not covered by one or more of groups , e.g. affinity, ligand exchange or chiral chromatography
B01J 20/24 - Naturally occurring macromolecular compounds, e.g. humic acids or their derivatives
B01J 20/281 - Sorbents specially adapted for preparative, analytical or investigative chromatography
B01J 20/30 - Processes for preparing, regenerating or reactivating
C07K 14/31 - Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from bacteria from Micrococcaceae (F) from Staphylococcus (G)
21.
THERAPEUTIC AGENT FOR OVARIAN CLEAR CELL CARCINOMA
Provided is a therapeutic agent that is effective for the treatment of ovarian clear cell carcinoma. The therapeutic agent for ovarian clear cell carcinoma contains a proteasome inhibitor as an active ingredient. Moreover, said proteasome inhibitor is a substance that reversibly or irreversibly binds to the 20s β5 subunit of a proteasome and inhibits chymotrypsin-like activity. Furthermore, said proteasome is 26s proteasome. The content ratio of the proteasome inhibitor in the therapeutic agent for ovarian clear cell carcinoma is 80 mass% or greater, 90 mass% or greater, or 100 mass%.
Provided are polyamide-based resin foam particles comprising a polyamide-based resin as a base material resin, the foam particles containing carbon nanotubes, wherein the closed-cell ratio of the foam particles is 70% or more.
This radiation-sensitive composition comprises a polymer having an acid-dissociable group and a compound represented by formula (1). L1represents a group having a (thio)acetal ring or the like. W1represents a single bond or a (b+1)-valent organic group having 1 to 40 carbon atoms. R1, R2, and R3each independently represent a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a fluorine atom, or a fluoroalkyl group. Rfrepresents a fluorine atom, or a fluoroalkyl group. a represents an integer of 0 to 8. b represents an integer of 1 to 4. d represents 1 or 2. When a represents 2 or more, a plurality of R1are same or different, and a plurality of R2are same or different. When d represents 2, a plurality of W1are same or different, and a plurality of b are same or different. M+ represents a monovalent cation.
The present invention provides polyamide resin foam particles which use, as a base material resin, a mixed resin of a polyamide resin A and a polyamide resin B, wherein: the polyamide resin A is an aliphatic polyamide; the polyamide resin B is a xylylene group-containing polyamide resin; and the mass ratio ((polyamide resin A):(polyamide resin B)) of the polyamide resin A to the polyamide resin B is 97:3 to 60:40.
C08L 77/00 - Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
25.
PHOTOCATALYTIC SYNTHESIS OF ALPHA, BETA UNSATURATED CARBONYL COMPOUNDS AND THEIR INTERMEDIATES
Described herein is a process of producing α,β unsaturated acids and amides and their intermediates via a photocatalytic reaction in the presence of a photocatalyst, oxygen, and optionally a solvent. The photocatalyst contains a tungstic acid or a salt of a tungstic acid. The process is simple, clean, and energy efficient, and provides good conversion, good selectivity, good turnover, and easy purification of end products.
C07C 51/367 - Preparation of carboxylic acids or their salts, halides, or anhydrides by reactions not involving formation of carboxyl groups by introduction of functional groups containing oxygen only in singly bound form
C07C 51/377 - Preparation of carboxylic acids or their salts, halides, or anhydrides by reactions not involving formation of carboxyl groups by hydrogenolysis of functional groups
C07C 409/04 - Peroxy compounds the —O—O— group being bound between a carbon atom, not further substituted by oxygen atoms, and hydrogen, i.e. hydroperoxides the carbon atom being acyclic
The present invention provides a method for producing a foam blow molded body, the method comprising a step for blow molding a foamed parison that is obtained by foaming a mixed resin of a polyolefin resin (A) and an olefin-based thermoplastic elastomer (B). With respect to this method for producing a foam blow molded body, the polyolefin resin (A) is composed of a branched homopolypropylene (a1) and a linear block polypropylene (a2); the mass ratio ((a1):(a2)) of the branched homopolypropylene (a1) to the linear block polypropylene (a2) is 50:50 to 93:7; the olefin-based thermoplastic elastomer (B) is a hydrogenated product of a triblock copolymer that is composed of a crystalline olefin polymer block and a polymer block of a conjugated diene compound; and the added amount of the olefin-based thermoplastic elastomer (B) relative to 100 parts by mass of the polyolefin resin (A) is 20 parts by mass to 40 parts by mass in the mixed resin.
C08J 9/04 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent
B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming
Provided is a composition that has exceptional salt resistance and is useful as a 3D printing support or a 3D cell culture support. A composition for a 3D printing support or a 3D cell culture support, the composition containing component (A) and component (B). (A) A polymer having structural units represented by formula (1). (B) An aqueous medium. [In formula (1), R1and R2each independently represent a hydrogen atom or a C1-10 alkyl group, or R1and R2 may bond to each other to form a C3-10 ring structure.]
B33Y 70/00 - Materials specially adapted for additive manufacturing
B33Y 80/00 - Products made by additive manufacturing
C08F 126/00 - Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
C08L 39/00 - Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocycli; Compositions of derivatives of such polymers
C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues
28.
NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR RESIN FILM HAVING PATTERN, RESIN FILM HAVING PATTERN, AND SEMICONDUCTOR CIRCUIT SUBSTRATE
A negative photosensitive resin composition comprising: a polymer (A); a crosslinking agent (B); and a photo-cation generator (C), wherein the polymer (A) has a structural unit represented by formula (a2) and has, at a terminal, a reactive group Y that reacts with the crosslinking agent (B) by the action of cations generated from the photo-cation generator (C) through light irradiation, and the photo-cation generator (C) includes a photo-cation generator (C1) that generates, through light irradiation, an acid having a pKa(1) of at least -3 and at most 3 as calculated using a Gaussian function based on the pKa of methanesulfonic acid in an aqueous solution of 25°C.
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
C08G 65/40 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols and other compounds
C08G 73/10 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
Provided is a radiation-sensitive resin composition comprising: a polymer which has a first structural unit represented by formula (1) and of which the solubility in a developing solution is changed by the action of an acid; a radiation-sensitive acid generator; and an acid diffusion regulator which has a monovalent radiation-sensitive onium cation and a monovalent organic acid anion.
An embodiment of the present invention relates to a photosensitive resin composition, a patterned resin film, a method for producing a patterned resin film, and a semiconductor circuit substrate. The photosensitive resin composition comprises: a polymer (A) that is at least one selection from the group consisting of polyimides and polyimide precursors, that contains a structural unit (a) containing a structural unit derived from an acid anhydride represented by formula (1) and contains a diamine-derived structural unit (b), and that has, e.g., a maleimide group, at a terminal on the polymer; (B) a photopolymerization initiator; and (D) a solvent. [In formula (1), L represents a single bond, etc.; R1to R3represents a hydrogen atom, etc., or represents an alkylene group formed by the bonding of the R1and R2(or R3) in the same ring with each other; n1and n2represent an integer from 0 to 3; and Y1represents a structure given by (Y1)(-Ar1-), etc.]
One aspect of the present invention relates to: a photosensitive resin composition; a resin film having a pattern; a method for producing a resin film having a pattern; and a semiconductor circuit board. The photosensitive resin composition contains: (A) a polymer which is at least one type selected from the group consisting of a polyimide and a polyimide precursor and which contains a structural unit (a) including a structural unit derived from an acid anhydride represented by formula (1) and a structural unit (b) derived from a diamine; (B) a naphthoquinonediazide compound; (C1) a crosslinkable compound having a methylol group or an alkoxymethyl group; and (D) a solvent. [In formula (1): L denotes a single bond or the like; R1to R3each denote a hydrogen atom or the like, or denote an alkylene group formed by bonding RＲ1and R2(or R3) of the same ring; n1to n2each denote an integer between 0 and 3; and Y1denotes a structure represented by a formula such as (Y1)(-Ar1-).]
The method for producing a vertical organic light-emitting transistor device includes: a step (A) in which a substrate having a main surface, on which the vertical organic light-emitting transistor device is to be formed, is prepared; a step (B) in which an organic material containing a polymer having a hydrocarbon group is applied onto the main surface of the substrate; a step (C) in which a dispersion liquid containing a dispersant and a carbon material is applied onto an organic material layer formed in the step (B); a step (D) in which a coating film formed in the step (C) is dried; and a step (E) in which after the step (D) is performed, a cleaning fluid is applied to remove the dispersant.
Provided are an exosome complex capable of achieving higher therapeutic effects than conventional products, and a manufacturing method thereof. This exosome complex contains an exosome and affinity molecules for a target cell, said affinity molecules including a hydrophobic moiety anchoring to the membrane surface of the exosome and an affinity moiety for the target cell, wherein 5 or more on average of the affinity molecules are contained per exosome.
C12N 15/115 - Aptamers, i.e. nucleic acids binding a target molecule specifically and with high affinity without hybridising therewith
C12N 15/88 - Introduction of foreign genetic material using processes not otherwise provided for, e.g. co-transformation using microencapsulation, e.g. using liposome vesicle
34.
METHOD FOR PRODUCING ELECTROCONDUCTIVE FILM, TOUCH PANEL, DISPLAY PANEL
Provided is a method for producing an electroconductive film that has high electroconductivity and is capable of evenly fixing an electroconductive carbon material over the entirety of an electroconductive film formation region. The method includes a step (A) for applying an organic resin material that contains a polymer having a hydrocarbon group to a base material and forming an organic resin layer, a step (B) for applying a liquid dispersion that contains a dispersant and carbon nanotubes to the organic resin layer and forming a coating film after step (A), a step (C) for drying the coating film after step (B), and a step (D) for implementing dispersant extraction to remove the dispersant from the coating film after step (C).
B05D 1/36 - Successively applying liquids or other fluent materials, e.g. without intermediate treatment
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
35.
POLYOLEFIN RESIN FOAM PARTICLES AND METHOD FOR MANUFACTURING SAME
This method for manufacturing polyolefin resin foam particles includes: a dispersion step for dispersing polyolefin resin particles in an aqueous medium; a foaming agent addition step for adding a physical foaming agent to inside an airtight container; and a foaming step for impregnating the resin particles with the physical foaming agent inside the airtight container, followed by releasing the resin particles from the airtight container together with the aqueous medium, and causing the resin particles to foam, thereby producing foam particles having an apparent density of 10 kg/m3to 80 kg/m3. The physical foaming agent contains a hydrofluoroolefin. The added amount of the hydrofluoroolefin in the foaming agent addition step is 10 to 30 parts by mass with respect to 100 parts by mass of resin particles.
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance and pattern circularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2) (excluding a compound corresponding to the first onium salt compound), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; m represents an integer of 0 to 8; and Z+represents a monovalent radiation-sensitive onium cation.) (In formula (2), R4represents a monovalent organic group having 1 to 40 carbon atoms; one of Rf21and Rf22represents a fluorine atom and the other represents a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar represents a monovalent organic group having a 5- to 40-membered aromatic ring; R5to R8122 each independently represent an integer of 1 to 6; and X represents a single bond or a bivalent hetero-atom-containing group.)
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance and pattern rectangularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises an onium salt compound represented by formula (1), a resin containing a structural unit having an acid-dissociable group, and an alcohol-type solvent having a boiling point of 90°C or higher. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, or a monovalent hydrocarbon group; one of Rf11and Rf1211 + represents a monovalent radiation-sensitive onium cation.)
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance, pattern circularity and LWR performance can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms or a group having such a structure that in which a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; one of Rf11and Rf1211 +represents a monovalent radiation-sensitive onium cation.) (In formula (2), R422 + represents a monovalent organic cation.)
Provided are: a radiation-sensitive resin composition from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed even when forming a resist pattern with a high aspect ratio; and a pattern formation method. The radiation-sensitive resin composition contains: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit that has an acid-dissociable group; and a solvent. (In formula (1), R1is a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group including a divalent heteroatom-containing group between the carbon-carbon bonds of the aforementioned hydrocarbon group. R2and R3are each a hydrogen atom or a monovalent hydrocarbon group. One of Rf11and Rf1211 +is a monovalent radiation-sensitive onium cation.) (In formula (2), R4is a monovalent organic group that includes a cyclic structure and has 3-40 carbon atoms. Rf21and Rf2222 + is a monovalent radiation-sensitive onium cation.)
Provided are: a radiation-sensitive resin composition with which it is possible to form a resist film that is capable of exhibiting sensitivity, LWR performance, water repellency, and development defect inhibitory ability at satisfactory levels; and a pattern formation method. A radiation-sensitive resin composition comprising an onium salt compound represented by formula (1), a first resin comprising structural units that have an acid-dissociable group, a second resin that has a higher fluorine content than the first resin and has an acid-dissociable group, and a solvent. (In formula (1), R1is a group comprising a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group comprising a divalent hetero atom-containing group between a carbon-carbon bond of said hydrocarbon group. Each of R2and R3is an independent hydrogen atom or a monovalent hydrocarbon group. When a plurality of R2s and a plurality of R3s exist, the plurality of R2s are the same as or different from each other and the plurality of R3s are the same as or different from each other. One of Rf11and Rf12is the fluorine atom and the other one thereof is the fluorine atom or a monovalent fluorinated hydrocarbon group. When a plurality of Rf11s and a plurality of Rf12s exist, the plurality of Rf11s are the same as or different from each other and the plurality of Rf1211 + is a monovalent radiation-sensitive onium cation.)
The present invention provides a radiation sensitive resin composition, a pattern forming method, etc., capable of achieving, at sufficient levels, sensitivity, LWR performance, and process window when next-generation technology is applied. This radiation sensitive resin composition comprises a resin that includes a repeating unit A having an acid dissociable group, an onium salt that has an organic acid anion moiety and an onium cation moiety, and a solvent, wherein the onium salt includes at least one group selected from the group consisting of a pentafluorosulfanyl group, a pentafluorosulfanyloxy group, and a pentafluorosulfanylthio group.
Provided are a radiation-sensitive resin composition and a pattern formation method by which sensitivity, critical dimension uniformity (CDU) performance, and development residue performance can be exhibited on a sufficient level when next-generation technology is applied. The radiation-sensitive resin composition comprises: a radiation-sensitive acid-generating resin including a structural unit A having an acid-dissociable group, and a structural unit D having a phenolic hydroxy group; and a solvent. The structural unit D has a phenolic hydroxy group and an alkyl group on the same aromatic ring, and in the aromatic ring of the structural unit D, the alkyl group is bonded to a carbon atom adjacent to the carbon atom to which the phenolic hydroxy group is bonded. The radiation-sensitive resin composition further satisfies at least one condition selected from the group consisting of the following conditions 1 and 2. Condition 1: The resin is a radiation-sensitive acid-generating resin further including a structural unit B including an organic acid anion moiety, and an onium cation moiety including an aromatic ring structure having a fluorine atom. Condition 2: An onium salt (excluding the radiation-sensitive acid-generating resin) including an organic acid anion moiety and an onium cation including an aromatic ring structure having a fluorine atom is further provided.
Provided are a method for producing a semiconductor substrate and a silicon-containing composition which are capable of forming a silicon-containing film with good resist pattern collapse suppression properties and good film thickness uniformity. This method involves a step for directly or indirectly coating a substrate with a silicon-containing composition, a step for coating, with a resist film forming composition, the silicon-containing film formed in the silicon-containing composition coating step, an exposure step for irradiating, with radioactive rays, the resist film formed in the resist film forming composition coating step, and a step for at least developing the exposed resist film, wherein the silicon-containing composition contains a silicon-containing compound, a polymer having a structural unit represented by formula (1) below, and a solvent, and the content ratio of the silicon-containing compound accounting for components other than the solvent in the silicon-containing composition is 50%-99.9% by mass. (In formula (1), RA1represents a hydrogen atom or a monovalent organic group having 1-20 carbon atoms. RA2 is a monovalent organic group having 1-20 carbon atoms.)
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
44.
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, COMPOSITION, AND COMPOUND
Provided are: a semiconductor substrate manufacturing method using a resist underlayer film-forming composition from which it is possible to form a film having excellent etching resistance, heat resistance, and bending resistance; a composition; and a compound. This semiconductor substrate manufacturing method comprises a step for directly or indirectly applying a resist underlayer film-forming composition on a substrate, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the application step, and a step for performing etching by using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound represented by formula (1). (In formula (1), Ar1, Ar2, Ar3, and Ar4each represent a substituted or unsubstituted monovalent group having an aromatic ring with 5-40 ring members, and at least one thereof has a group represented by formula (1-1) or (1-2).) (In formulae (1-1) and (1-2), Ar5, Ar6, and Ar7 each represent a substituted or unsubstituted aromatic ring that has 6-20 ring members and that forms a fused ring structure.)
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C07C 13/547 - Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with three condensed rings at least one ring not being six-membered, the other rings being at the most six-membered
C07C 33/36 - Polyhydroxylic alcohols containing six-membered aromatic rings and other rings
C07C 39/17 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings containing other rings in addition to the six-membered aromatic rings
C07C 39/23 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic, containing six-membered aromatic rings and other rings, with unsaturation outside the aromatic rings
C07C 43/215 - Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring having unsaturation outside the six-membered aromatic rings
C07D 207/335 - Radicals substituted by nitrogen atoms not forming part of a nitro radical
C07D 209/14 - Radicals substituted by nitrogen atoms, not forming part of a nitro radical
C07D 333/18 - Radicals substituted by singly bound hetero atoms other than halogen by sulfur atoms
The present invention provides: a method for producing a semiconductor substrate, the method using a resist underlayer film forming composition that is capable of forming a resist underlayer film having excellent pattern rectangularity; and a resist underlayer film forming composition. The present invention provides a method for producing a semiconductor substrate, the method comprising: a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate; a step in which a resist film forming composition is applied to a resist underlayer film that is formed by the above-described resist underlayer film forming composition application step; a step in which a resist film that is formed by the above-described resist film forming composition application step is subjected to light exposure by means of radiation; and a step in which at least the light-exposed resist film is developed. With respect to this method for producing a semiconductor substrate, the resist underlayer film forming composition contains a solvent and a polymer that has a repeating unit (1) which comprises an organic sulfonic acid anion moiety and an onium cation moiety.
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
46.
RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
This radiation-sensitive resin composition comprises a first polymer and a compound. The first polymer has a first structural unit that contains a substructure in which a hydrogen atom in a carboxy group, phenolic hydroxyl group, or amide group is substituted by a group with formula (1); has a second structural unit that contains a phenolic hydroxyl group; and has a solubility in developer that is modified by the action of acid. The compound has a monovalent organic acid anion and a monovalent radiation-sensitive onium cation that contains an aromatic ring in which at least one hydrogen atom is substituted by a fluorine atom or a fluorine atom-containing group.
The present invention provides: a composition for chemical mechanical polishing, the composition being capable of selectively polishing tungsten films by increasing the polishing rate of tungsten films with respect to silicon oxide films, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. The present invention also provides: a composition for chemical mechanical polishing, the composition being capable of polishing a silicon oxide film at a high polishing rate, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. A method for producing abrasive grains according to the present invention comprises a step in which particles each having a surface to which a hydroxyl group (-OH) is immobilized via a covalent bond, an alkoxysilane having an epoxy group, and a basic compound are mixed and heated.
This radiation-sensitive composition contains a polymer having an acid-dissociable group and a compound represented by formula (1). In formula (1), A1represents a (m+n+2)-valent aromatic ring group. In formula (1), "-OH" and "-COO-" are bound to the same benzene ring in A1. An atom to which "-OH" is bound is located adjacent to an atom to which "-COO-" is bound. R1represents a monovalent group having a cyclic(thio)acetal structure. M+ represents a monovalent organic cation.
Expanded beads comprising a linear low density polyethylene as a base resin, wherein: the linear low density polyethylene has a biomass degree of 40% or more as measured by ASTM D 6866; in a DSC curve obtained by heating from 23°C to 200°C at a heating rate of 10°C/min, the expanded beads have a crystal structure in which are present a melting peak (intrinsic peak) unique to the linear low density polyethylene, and one or more melting peaks (high temperature peaks) on a higher temperature side than the intrinsic peak; the total heat of fusion of the expanded beads is at least 70 J/g and at most 100 J/g; and the heat of fusion at the high temperature peak is at least 10 J/g and at most 50 J/g.
C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming
B29C 44/44 - Feeding the material to be shaped into a closed space, i.e. to make articles of definite length in the form of expandable particles or beads
50.
EXPANDED BEAD PRODUCTION METHOD, AND EXPANDED BEADS
A method for producing expanded beads having a bulk density of 10-240 kg/m3, the method expanding resin beads having, as the base resin, a mixed resin from at least two linear low density polyethylenes. The mixed resin contains a polyethylene A having a biomass degree of at least 50% and a melt flow rate (MFR) of 0.1-3 g/10min, and a polyethylene B. The difference between the MFR of A and the MFR of B is 0-2 g/10min, the mass ratio of A and B is 5/95-95/5, and the biomass degree of the mixed resin is 5% or more. In a DSC curve, the expanded beads have a crystal structure in which are present melting peaks unique to the linear low density polyethylenes and a high-temperature peak on the high-temperature side thereof, the heat of fusion at the high-temperature peak being 10-50 J/g.
B29C 44/44 - Feeding the material to be shaped into a closed space, i.e. to make articles of definite length in the form of expandable particles or beads
B29K 23/00 - Use of polyalkenes as moulding material
51.
METHOD FOR PRODUCING FOAMABLE POLYAMIDE-BASED RESIN PARTICLES, METHOD FOR PRODUCING POLYAMIDE-BASED RESIN FOAMED PARTICLES, AND POLYAMIDE-BASED RESIN FOAMED PARTICLES
A method for producing foamable polyamide-based resin particles according to the present invention includes impregnating polyamide-based resin particles with an inorganic physical foaming agent in a gas phase, wherein the polyamide-based resin particles have a water content of at least 2.5 mass% and contain 0.5-10 mass% of carbon black. The foamable polyamide-based resin particles are obtained by heating and foaming foamable polyamide resin particles.
The present invention causes a radiation-sensitive composition to contain a polymer including acid-labile group and a compound (Q) given by formula (1). In formula (1), L1represents an ester group, -CO-NR3-, a (thio) ether group, or a sulfonyl group. L2 represents a single bond or a divalent linking group.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
C07C 309/27 - Sulfonic acids having sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings of a carbon skeleton containing carboxyl groups bound to the carbon skeleton
C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
The present invention provides a method for producing a geopolymer foam, wherein: a reaction slurry that contains an aluminosilicate, an alkali metal silicate, aggregate and water is obtained; an expandable slurry is formed by adding a foaming agent to the reaction slurry; and a geopolymer foam is produced by heating the expandable slurry. This method for producing a geopolymer foam is characterized in that: mica which has an average particle diameter of 50-500 µm and a volume ratio (X) of particles having a particle diameter of 10 µm or less of 3% or less is used as the aggregate; and the reaction slurry has a viscosity of 3,000-15,000 Pa∙s at 23°C.
C04B 20/00 - Use of materials as fillers for mortars, concrete or artificial stone according to more than one of groups and characterised by shape or grain distribution; Treatment of materials according to more than one of the groups specially adapted to enhance their filling properties in mortars, concrete or artificial stone; Expanding or defibrillating materials
C04B 38/02 - Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by adding chemical blowing agents
54.
METHOD FOR PRODUCING THERMOPLASTIC RESIN FOAM PARTICLE MOLDED BODY
A method for producing a thermoplastic resin foam particle molded body according to the present invention comprises a crack filling step and an in-mold molding step. Foam particles (2) to be used in the crack filling step have a columnar shape, while having one or more defective parts of one or more kinds, the defective parts being selected from the group consisting of through holes and grooves. In cut surfaces of the foam particles (2) obtained by cutting each foam particle (2) by a plane that is perpendicular to the axial direction of the foam particle (2) at the center of the axial direction, the ratio Ca/A of the average cross-sectional area Ca of one defective part to the average cross-sectional area A of the foam particles (2) is 0.01 to 0.20, and the ratio Ct/A of the total cross-sectional area Ct of the defective parts to the average cross-sectional area A of the foam particles (2) is 0.02 to 0.20. The filling rate F of the foam particles (2) in a state where a mold (1) is completely closed is 125% to 220%.
B29C 44/44 - Feeding the material to be shaped into a closed space, i.e. to make articles of definite length in the form of expandable particles or beads
B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming
C08J 9/22 - After-treatment of expandable particles; Forming foamed products
55.
PRODUCTION METHOD FOR THERMOPLASTIC RESIN FOAMED PARTICLE MOLDED BODY
B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming
B29C 44/54 - Feeding the material to be shaped into an open space or onto moving surfaces, i.e. to make articles of indefinite length in the form of expandable particles or beads
C08J 9/22 - After-treatment of expandable particles; Forming foamed products
56.
PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE
The present invention provides a photosensitive resin composition which contains a polymer (A) that has an acid-cleavable group, a photoacid generator (B) and a solvent (C), wherein: the polymer (A) comprises a structural unit (I) that is represented by formula (1) and a structural unit (III) that has a glass transition temperature Tg of 50°C or less in the form of a homopolymer; and the photoacid generator (B) is a compound which generates an acid that has a van der Waals volume of 200 Å3or more when irradiated with active light or radiation. The present invention also provides: a method for forming a resist pattern film, the method using this photosensitive resin composition; and a method for producing a plated shaped article. The details of R1A and L in formula (1) are as described in the description.
The purpose of the present invention is to provide: a semiconductor substrate production method using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. This semiconductor substrate production method includes a step in which a resist underlayer film-forming composition is directly or indirectly applied to a substrate, a step in which a resist pattern is formed directly or indirectly on the resist underlayer film formed in the application step, and a step in which etching is performed using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound including a boron atom.
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
G03F 7/40 - Treatment after imagewise removal, e.g. baking
58.
RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
A radiation-sensitive composition contains: (A) a polymer; and (B) a radiation-sensitive acid generator composed of an onium cation having at least one group Rf1 selected from the group consisting of a fluoroalkyl group and a fluoro group (excluding the fluoro group in the fluoroalkyl group), and an organic anion containing four or more iodine atoms.
A radiation-sensitive composition contains: (A) a polymer including a structural unit (U) represented in formula (1); and (B) a radiation-sensitive acid generator composed of an onium cation having at least one group Rf1selected from the group consisting of a fluoroalkyl group and a fluoro group (excluding the fluoro group in the fluoroalkyl group), and an organic anion containing an iodine atom. In formula (1), R1is a hydrogen atom, a methyl group, or the like. X1is a single bond, an ether bond, an ester bond, or the like. Ar1is a cyclic group bonded to X1via an aromatic ring. A hydroxyl group or a –ORYgroup is bonded to the atom adjacent to the atom bonded to X1among the atoms constituting the aromatic ring in Ar1. RY is an acid-dissociable group.
[Problem] The present invention addresses the problem of providing: a photosensitive resin composition which has excellent volatility regarding a solvent therein and from which it is possible to produce a resist coating film in which the generation of coating bubbles is sufficiently suppressed; a method for producing a resist pattern film using the photosensitive resin composition; and a method for producing a plated shaped article using the resist pattern film. [Solution] A photosensitive resin composition characterized by comprising: a polymer (A) that has a structural unit having a phenolic hydroxyl group and a structural unit derived from a (meth)acrylate having an acid-dissociable group; a specific photoacid generator (B); and an organic solvent (C) that contains 3-ethoxyethyl propionate, wherein the solid content concentration is 30 mass% or more.
This radiation-sensitive resin composition contains a polymer which has a first structural unit represented by the following formula (1) and of which the solubility in a developer changes under the action of an acid, and a compound represented by the following formula (2).
Provided are a radiation-sensitive resin composition that has suitable storage stability and makes it possible to form a resist film with excellent sensitivity, LWR performance, water repellency, and development defect-suppressing performance, and a pattern formation method. The radiation-sensitive resin composition contains: a first resin including a structural unit (I) represented by formula (1), a structural unit (II) represented by formula (2) (excluding the structural unit represented by formula (1)), and a structural unit (III) having an acid-cleavable group; and a solvent. (In formula (1), RK1is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. L1is an alkanediyl group having 1-5 carbon atoms. Rf1is a monovalent fluorinated hydrocarbon group having 2-10 carbon atoms and 5-7 fluorine atoms. In formula (2), RK2is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. Lfis a fluorine-substituted or unsubstituted divalent organic group having 1-20 carbon atoms. L2is *-COO- or *-OCO-. * is a bond on the Lfside. p is an integer of 0-2. When a plurality of Lfand L2are present, the plurality of Lfand L2may be the same or different from each other. Rf2is a fluorine-substituted or unsubstituted monovalent organic group having 1-20 carbon atoms. Lfand Rf2 have a total of one or more fluorine atoms.)
Provided are a radiation-sensitive resin composition capable of forming a resist film with excellent sensitivity, LWR performance, water repellency, and suppression of development flaws, and having good storage stability; and a pattern forming method. A radiation-sensitive resin composition comprising a polymer comprising structural units (I) represented by formula (1) and structural units differing from said structural units (I); an onium salt represented by formula (i); and a solvent. (In formula (1), RK1is a hydrogen atom, a fluorine atom, a methyl group, or trifluoromethyl group. L1is a 1-5 carbon alkanediyl group. Rf1is a 2-10 carbon fluorinated hydrocarbon group with 5-7 fluorine atoms.) (In formula (i), Ra1is a substituted or unsubstituted 1-40 carbon monovalent organic group in which the atom adjacent to the sulfur atom is not bound to a fluorine atom or fluorinated hydrocarbon group. X+ is a monovalent onium cation.)
C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
C07D 317/72 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
The purpose of the present invention is to provide: a radiation-sensitive resin composition which enables the formation of a resist film having excellent sensitivity, LWR performance, water repellency and development defect reducing properties and has satisfactory storage stability; and a pattern formation method. Provided is a radiation-sensitive resin composition comprising: a polymer containing a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by formula (α); and a solvent. (In formula (1), RK1represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; L1represents an alkanediyl group having 1 to 5 carbon atoms; and Rf1represents a fluorinated hydrocarbon group having 5 to 7 fluorine atoms and also having 2 to 10 carbon atoms.) (In formula (α), RWrepresents a monovalent organic group containing a cyclic structure and having 3 to 40 carbon atoms; Rfaand Rfbeach independently represent a fluorine atom or a fluorinated hydrocarbon group having 1 to 10 carbon atoms; R11and R12each independently represent a hydrogen atom, a fluorine atom, a hydrocarbon group having 1 to 10 carbon atoms, or a fluorinated hydrocarbon group having 1 to 10 carbon atoms; n1 represents an integer of 1 to 4, in which, when n1 is 2 or more, a plurality of Rfa's and Rfb's are the same as or different from each other; n2 represents an integer of 0 to 4, in which, when n2 is 2 or more, a plurality of R11's and R12's are the same as or different from each other; no carbonyl group is interposed between a sulfur atom in a sulfonic acid ion and the cyclic structure in RW; and Z+ represents a monovalent onium cation.)
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
C07D 317/72 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
EXPANDED CRYSTALLINE-THERMOPLASTIC-RESIN PARTICLES, MOLDED OBJECT FROM EXPANDED CRYSTALLINE-THERMOPLASTIC-RESIN PARTICLES, AND PRODUCTION METHOD THEREFOR
A molded object from expanded crystalline-thermoplastic-resin particles which is obtained by mutually fusion-bonding columnar expanded crystalline-thermoplastic-resin particles (1) having no through-hole. The molded object from expanded crystalline-thermoplastic-resin particles has an expansion ratio of 15-90. The molded object from expanded crystalline-thermoplastic-resin particles has a closed-cell content of 90% or higher. The molded object from expanded crystalline-thermoplastic-resin particles has an open-cell content of 2-12%.
B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming
B29C 44/44 - Feeding the material to be shaped into a closed space, i.e. to make articles of definite length in the form of expandable particles or beads
66.
POLYPROPYLENE-BASED RESIN FOAM PARTICLES, METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN FOAM PARTICLES, AND LOGISTICS PACKAGING MATERIAL
Foam particles which have a mass ratio of foam core layer to coating layer of 97:3-88:12 and a bulking factor of 5-45 times, inclusive, and have a coating layer which comprises PE-LLD, wherein the melting point of the PE-LLD is 105-130°, inclusive, and the bend elastic constant Ms of the PE-LLD is 120-600MPa, inclusive. A logistics packaging material comprising a foam-particle molded body, wherein the scale factor of the molded body is 5-45 times, inclusive, the maximum flexural strength thereof is 0.3MPa or higher, the product of the tensile strength times the tensile elongation is 18MPa·% or higher, the coefficient of dynamic friction against a polyvinyl chloride sheet is at least 0.4 and less than 0.7, and the coefficient of static friction against a polyvinyl chloride sheet is less than 1.0.
NATIONAL UNIVERSITY CORPORATION, IWATE UNIVERSITY (Japan)
Inventor
Oishi Yoshiyuki
Tsukamoto Tadashi
Kadota Toshiaki
Iizuka Shunsuke
Okamoto Koichi
Abstract
This polymer consists of a repeating unit represented by formula (1). [In formula (1), -N(R')-RN(R')- is a structure derived from an unsubstituted or substituted dimer diamine, and R', R1and R2 are each independently a hydrogen atom, a halogen atom, an unsubstituted or substituted hydrocarbon group having 1-20 carbon atoms, or an unsubstituted or substituted heterocyclic aromatic group having 3-20 carbon atoms.]
C08G 73/06 - Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule; Polyhydrazides; Polyamide acids or similar polyimide precursors
68.
POLYMER, COMPOSITION, CURED PRODUCT, LAMINATED BODY, AND ELECTRONIC COMPONENT
One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminated body, or an electronic component, said composition including a polymer containing a repeating unit that is represented by formula (1). [In formula (1): -N(R')-R3-N(R')- is a structure derived from a dimer diamine substituted by an unsubstituted group or a substituted group; R', R1, and R2each independently represent a hydrogen atom, a halogen atom, a C1-20 hydrocarbon group substituted by an unsubstituted or a substituted group, a C3-20 heterocyclic aliphatic group substituted by an unsubstituted or a substituted group, or a C3-20 heterocyclic aromatic group substituted by an unsubstituted or a substituted group; and -NR1R2may be a nitrogen-containing heterocyclic group with 5-20 ring-forming atoms in which R1and R2 are bound to each other.]
C08L 79/04 - Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
B32B 27/42 - Layered products essentially comprising synthetic resin comprising condensation resins of aldehydes, e.g. with phenols, ureas or melamines
C08G 73/06 - Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule; Polyhydrazides; Polyamide acids or similar polyimide precursors
69.
METHOD FOR MANUFACTURING INTRAVASCULAR INDWELLING DEVICE, HOLDER FOR MANUFACTURING INTRAVASCULAR INDWELLING DEVICE, AND METHOD FOR EVALUATING INTRAVASCULAR INDWELLING DEVICE
In this method for manufacturing an intravascular indwelling device, there are used a cylindrical holder (1) for holding an intravascular indwelling device (20) in an interior space, and an outer cylindrical body (2) that has an inside diameter larger than the outside diameter of the holder (1). The holder (1) holding the intravascular indwelling device (20) is housed in the outer cylindrical body (2), and a suspension (S) of the target cells is fed into the outer cylindrical body (2). The outer cylindrical body (2) and the holder (1) are operated so that the suspension (S) flows relative to the intravascular indwelling device (20) while in contact with the intravascular indwelling device (20), and the target cells are cultured.
A lens is produced by a method comprising: a step for applying a radiation-sensitive composition onto a base material to form a coating film; a step for irradiating a portion of the coating film with a radioactive ray to generate an acid in an exposed portion; a step for developing the coating film that has been irradiated with the radioactive ray to form a pattern; a step for irradiating the pattern with a radioactive ray; and a step for heating the pattern after the irradiation of the pattern with the radioactive ray to form a lens. The radiation-sensitive composition comprises at least one polymer (A), a radiation-sensitive acid generator (B) and a solvent(C), in which the polymer (A) contains, in a single molecule or different molecules, a structural unit (a1) having a hydroxyl group bound to an aromatic ring and a structural unit (a2) having such a configuration that an acid-dissociating group is detached by the action of an acid to generate a carboxyl group.
Provided are: a method for producing a semiconductor substrate using a cleaning fluid excellent in terms of the property of cleaning peripheral portions of substrates and waste-liquid stability; a method for forming a resist underlayer film; and the cleaning fluid. This method for producing a semiconductor substrate comprises: a step in which a composition for resist underlayer film formation is applied directly or indirectly to a substrate; a step in which peripheral portions of the substrate are cleaned with a cleaning fluid; and a step in which after the cleaning step, a resist pattern is formed directly on or indirectly over the resist underlayer film formed in the application step. The composition for resist underlayer film formation includes a metal compound and a solvent, and the cleaning fluid includes an organic acid.
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Provided is an inorganic foam, a base material of the inorganic foam being an inorganic polymer having a leucite crystal structure. The area of a peak derived from the leucite crystal in an X-ray diffraction spectrum of the inorganic foam is characterized by satisfying Equation (1). (1): D(geo)/D(pur)≧0.5 (D(geo) denotes the area of a peak located at 2θ=27.3° derived from the leucite crystal in the X-ray diffraction spectrum of the inorganic foam, and D(pur) is the area of a peak located at 2θ=27.3° derived from the leucite crystal in an X-ray diffraction spectrum of a pure material of leucite.)
C04B 35/00 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
73.
RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, ACID GENERATOR, AND COMPOUND
Provided is a radiation-sensitive composition containing: a polymer having an acid dissociable group; and at least one compound (b) selected from the group consisting of a compound represented by formula (1) and a compound represented by formula (2). In formula (1), R1is a 1-20C monovalent organic group. R2is either a single bond, or is a 1-20C bivalent group that bonds to the N- in formula (1) through -CR4R5- or an aromatic ring. Ma+is an a-valent cation. In formula (2), R7is a group having a partial structure in which an iodine atom is bonded to an aromatic ring. Mb+ is a b-valent cation.
C07C 311/09 - Sulfonamides having sulfur atoms of sulfonamide groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton the carbon skeleton being further substituted by at least two halogen atoms
C07C 311/21 - Sulfonamides having sulfur atoms of sulfonamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the sulfonamide groups bound to a carbon atom of a six-membered aromatic ring
Provided is a radiation-sensitive composition comprising a polymer having a structural unit represented by formula (1) and a photodegradable base. In formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group, or the like. X1is an alkanediyl group, an oxygen atom, or a sulfur atom. Y1is a monovalent hydrocarbon group, a monovalent fluorinated hydrocarbon group, or a halogen atom. R2is a monovalent organic group. B1is a single bond or *1−COO−. R3is a substituted or unsubstituted divalent hydrocarbon group. Z1is a single bond, −O−, −COO−, −OCO−, −OCOO−, −CONR4−, −NR4CO−, −OCONR4-, −NR4COO−, or −NR4CONR5−. R4and R5 are hydrogen atoms or monovalent hydrocarbon groups.
The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. Provided is a method for producing a semiconductor substrate which includes a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the coating step, and a step for etching while using the resist pattern as a mask, wherein: the composition for forming the resist underlayer film contains a compound having a partial structure represented by formula (1), and a solvent; and the compound has at least one monovalent group which includes an aromatic heterocycle having a 5- to 20-membered ring. (In formula (1), Ar1and Ar2each independently represent a substituted or unsubstituted aromatic ring which has a 5- to 20-membered ring and forms a condensed ring structure and two adjacent carbon atoms in formula (1). R1 represents one or more groups selected from the group consisting of a monovalent ring including a substituted or unsubstituted aromatic ring having a 5- to 60-membered ring, and a monovalent group including an aromatic heterocycle having a 5- to 20-membered ring. L is a single bond or a divalent linking group. * and ** each represent a position which bonds to a section of said compound other than the partial structure represented by formula (1). m and n each independently represent an integer from 0 to 3. However, m+n is 1 or higher.)
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C07D 209/08 - Indoles; Hydrogenated indoles with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, directly attached to carbon atoms of the hetero ring
C07D 209/14 - Radicals substituted by nitrogen atoms, not forming part of a nitro radical
C08G 61/00 - Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY (Japan)
Inventor
Miyazaki Yuta
Arai Takayuki
Ito Masayoshi
Negishi Hashiru
Harashima Hideyoshi
Sato Yusuke
Abstract
A method for purifying a composition that comprises a step for dissolving the composition containing a compound represented by formula(1) [in formula (1): R1represents -N(R2)-R2(wherein R2represents a C1-C4 alkyl group); R3and R4represent a C3-C8 alkanediyl group; R5represents a hydroxyl group; R6represents -R7-OH (wherein R7represents a C4-C12 alkanediyl group) or a hydrogen atom; and n is an integer of 0 or 1] in an aqueous layer and performing liquid-liquid extraction, wherein an oil layer used in the liquid-liquid extraction contains one or more liquids selected from the group consisting of a ketone liquid, an ester liquid and an ether liquid each having a solubility parameter (SP value) of 14.8-20.5 (MPa1/2).
A61K 31/713 - Double-stranded nucleic acids or oligonucleotides
A61K 47/18 - Amines; Amides; Ureas; Quaternary ammonium compounds; Amino acids; Oligopeptides having up to five amino acids
A61K 47/24 - Organic compounds, e.g. natural or synthetic hydrocarbons, polyolefins, mineral oil, petrolatum or ozokerite containing atoms other than carbon, hydrogen, oxygen, halogen, nitrogen or sulfur, e.g. cyclomethicone or phospholipids
A61K 47/28 - Steroids, e.g. cholesterol, bile acids or glycyrrhetinic acid
A61K 47/34 - Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polyesters, polyamino acids, polysiloxanes, polyphosphazines, copolymers of polyalkylene glycol or poloxamers
C07C 219/06 - Compounds containing amino and esterified hydroxy groups bound to the same carbon skeleton having esterified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having the hydroxy groups esterified by carboxylic acids having the esterifying carboxyl groups bound to hydrogen atoms or to acyclic carbon atoms of an acyclic saturated carbon skeleton
C07C 219/08 - Compounds containing amino and esterified hydroxy groups bound to the same carbon skeleton having esterified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having at least one of the hydroxy groups esterified by a carboxylic acid having the esterifying carboxyl group bound to an acyclic carbon atom of an acyclic unsaturated carbon skeleton
C07C 229/12 - Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings to carbon atoms of acyclic carbon skeletons
C12N 15/113 - Non-coding nucleic acids modulating the expression of genes, e.g. antisense oligonucleotides
77.
RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING SUBSTRATE, AND COMPOUND
Provided are: a radiation-sensitive resin composition that can be formed into a resist film having satisfactory levels of sensitivity and CDU performance even when a next-generation technology is applied; and a pattern formation method. The radiation-sensitive resin composition contains a compound A represented by formula (I). [Chemical 1] (In the formula, R1is a (m+m')-valent organic group and has a cyclopropane ring skeleton, a cyclobutane ring skeleton, or both. X1is a group represented by formula (1-1) or a group represented by formula (1-2). X2is a group represented by formula (2-1) or a group represented by formula (2-2). Y+ is a monovalent onium cation. m is an integer of 1-2. m' is an integer of 0-1.) [Chemical 2] (In the formula, * represents a bond with another group.) The radiation-sensitive resin composition also contains a resin B including a structural unit having an acid-dissociable group, a radiation-sensitive acid generator other than the compound A, and a solvent.
C07C 59/11 - Saturated compounds having only one carboxyl group and containing hydroxy or O-metal groups containing rings
C07C 61/04 - Saturated compounds having a carboxyl group bound to a three- or four-membered ring
C07C 62/08 - Saturated compounds containing ether groups, groups, groups, or groups
C07C 62/24 - Saturated compounds containing keto groups the keto group being part of a ring
C07C 69/34 - Esters of acyclic saturated polycarboxylic acids having an esterified carboxyl group bound to an acyclic carbon atom
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
Provided are: a radiation-sensitive resin composition that can form a resist film that exhibits satisfactory levels of sensitivity, CDU performance, pattern circularity, LWR performance, and pattern rectangularity even when forming a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin containing a structural unit having an acid-dissociable group; and a solvent. (In formula (1), R1represents a C1-40 monovalent chain-shaped organic group. R2and R3are each a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group. Rf11and RF12are each a fluorine atom or a monovalent fluorinated hydrocarbon group. R4, R5, R6, R7and R8are each a hydrogen atom, a hydroxyl group, a halogen atom, or a C1-20 monovalent organic group. Alternatively, if a plurality of R8are present, two of the plurality of R8mutually combine to form a ring structure having 5-20 ring members and configured by also two carbon atoms of the benzene ring in formula (1) to which these moieties are bonded.) (In formula (2), RBdenotes a C3-40 monovalent organic group including a ring structure. Rf21and Rf22each denote a fluorine atom or a monovalent fluorinated hydrocarbon group. Z+ is a monovalent radiation-sensitive onium cation.)
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance, pattern circularity, LWR performance and pattern rectangularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. The radiation-sensitive resin composition comprises: an onium salt compound represented by formula (1); a resin containing a first structural unit having an acid-dissociating group and a second structural unit having a polycyclic lactone structure, a polycyclic sultone structure or a polycyclic carbonate structure; and a solvent. (In formula (1), R1represents a monovalent linear organic group having 1 to 40 carbon atoms; R2and R3independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; Rf11and Rf12122 independently represent an integer of 1 to 4; R4, R5, R6, R7and R8independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; when there are a plurality of R8's, two of the plurality of R81233 represents an integer of 1 to 5.)
The purpose of the present invention is to provide a production method for semiconductor substrates that makes it possible to achieve sufficient levels of sensitivity, LWR performance, and the like. According to the present invention, a production method for semiconductor substrates includes a step for directly or indirectly vapor depositing a metal or a metal compound on a substrate to form a metal-containing resist film and a step for exposing the resist film, the metal or metal compound including Au atoms, Cr atoms, Ag atoms, In atoms, or any of those.
This radiation-sensitive composition contains: a polymer having an acid dissociative group; and a compound represented by formula (1). In formula (1), R1is a monovalent group having an aromatic ring structure and 5-20 carbons. R1has an aromatic ring structure and is bonded to N-. R2represents a monovalent organic group having 1-20 carbons. Mn+ represents an n-valent cation. n represents 1 or 2.
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present invention contains abrasive grains (A) and an iron(III) compound (B), wherein the nitric acid ion concentration in the chemical-mechanical polishing composition is 200 ppm or less.
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present invention contains abrasive grains (A) and an iron(III) compound (B), wherein the iron(III) compound (B) is a chelate compound.
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present invention contains: abrasive grains (A); an iron(III) compound (B); and at least one type of metal atom selected from the group consisting of Al atoms, Mn atoms, and Zn atoms. The total Al, Mn, and Zn atom content is 0.1 ppm to 100 ppm, inclusive.
This method for manufacturing a polypropylene-based resin foamed particle molded article comprises: filling a forming mold with foamed particles (1) compressed by pressurized gas; and then supplying a heated medium in the forming mold to conduct in-mold molding of the foamed particles (1) in the forming mold. Each of the foamed particles (1) has a cylinder shape having a through-hole (11). The through-holes (11) have an average hole diameter d of not less than 0.1 mm but less than 1 mm. The ratio d/D of the average hole diameter d of the through-holes (11) with respect to the average outer diameter D of the foamed particles (1) is 0.4 or less. In a state where the forming mold is filled with the foamed particles (1), the compression percentage P of the foamed particles (1) is 20-80%.
B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming
B29C 44/44 - Feeding the material to be shaped into a closed space, i.e. to make articles of definite length in the form of expandable particles or beads
B29K 23/00 - Use of polyalkenes as moulding material
86.
CULTURE METHOD, CULTURE PRODUCT, SPHEROID, AND METHOD FOR SCREENING FOR TEST SUBSTANCE
This culture method includes culturing a spheroid of human neural cell-like cells in the presence of a tau protein aggregate and then culturing the culture product in a culture medium containing a lipid in an amount of 5 μg/mL or more, in which the lipid comprises at least one component selected from the group consisting of a glycerolipid, a glycerophospholipid and a sphingolipid. The culture method includes culturing a spheroid of human neural cell-like cells in the presence of a tau protein aggregate and then culturing the culture product in a culture medium containing a neurotrophic factor.
VERTEBRAL BODY ESTIMATION MODEL LEARNING DEVICE, VERTEBRAL BODY ESTIMATING DEVICE, FIXING CONDITION ESTIMATING DEVICE, VERTEBRAL BODY ESTIMATION MODEL LEARNING METHOD, VERTEBRAL BODY ESTIMATING METHOD, FIXING CONDITION ESTIMATING METHOD, AND PROGRAM
This vertebral body estimation model learning device comprises: a vertebral body estimation model executing unit for executing a vertebral body estimation model, which is a mathematical model for estimating, on the basis of image data of a vertebral body two-dimensional image being a two-dimensional image in which a vertebral body appears, positions of each vertex of the vertebral body and vectors at each vertex, the vectors being oriented from the vertices toward a center of the vertebral body, to thereby estimate the positions of the vertices of a vertebral body appearing in image data of a vertebral body two-dimensional image to be estimated, and the vectors at each vertex; and an updating unit for updating the vertebral body estimation model on the basis of the result of the estimation performed by the vertebral body estimation model executing unit.
Provided are a radiation-sensitive resin composition and a pattern formation method that make it possible to form a resist film that has excellent sensitivity, CDU performance, and storage stability, even when next-generation technology is applied. According to the present invention, a radiation-sensitive resin composition contains: a resin that includes a structural unit that is represented by formula (1) (in which R1is a hydrogen atom, a C1–5 alkyl group, or a C1–5 halogenated alkyl group, Rxis a monovalent C1–20 hydrocarbon group, n is an integer that is 0–14, and Ryis a fluorine atom, a C1–5 hydrocarbon group, or a C1–5 fluorinated hydrocarbon group, each Ry being the same or different); at least one type of salt that includes an organic acid anion portion and a cation portion; and a solvent. The salt includes a carboxylate anion in the organic acid anion portion, and at least a portion of the organic acid anion portion of the salt includes an iodine-substituted aromatic ring structure.
Polyethylene resin foam particles using a non-crosslinked linear low-density polyethylene as base resin. The density, the amount of melting heat, the melting point and the melt flow rate under the conditions of a temperature of 190°C and a load of 2.16 kg of the linear low-density polyethylene are within predetermined ranges. The average bubble diameter of the foam particles is from 50 μm to 180 μm.
Polyethylene resin foam particles using a mixed resin of virgin polyethylene (A) and recycled polyethylene (B) as base resin, and a method for producing said particles. The mixed resin contains a prescribed ratio of the virgin polyethylene (A) and the recycled polyethylene (B). The virgin polyethylene (A) is a linear low-density polyethylene (A1) having prescribed physical properties and polymerized using a metallocene polymerization catalyst. The recycled polyethylene (B) is a post-consumer material containing a linear low-density polyethylene (B1) and a low-density polyethylene (B2), the linear low-density polyethylene (B1) being the main component.
The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a resist underlayer film-forming composition from which it is possible to form a resist underlayer film that has excellent solvent resistance and excellent resist pattern rectangularity; and a resist underlayer film-forming composition. The method for producing a semiconductor substrate comprises: a step for directly or indirectly applying a resist underlayer film-forming composition to a substrate; a step for applying a resist film-forming composition to a resist underlayer film that is formed in the step for applying the resist underlayer film-forming composition; a step for exposing, to radiation, a resist film that is formed in the step for applying the resist film-forming composition; and a step for developing at least the exposed resist film. The resist underlayer film-forming composition contains a polymer that has a partial structure represented by formula (i), and a solvent. (In formula (i), Y1represents a divalent group selected from the group consisting of a sulfonyl group, a carbonyl group, and an alkanediyl group. Y2represents a divalent group selected from the group consisting of a sulfonyl group, a carbonyl group, and a single bond. Note that in the case where Y1represents an alkanediyl group, Y2represents a sulfonyl group or a carbonyl group. In the case where Y2represents a single bond, Y1represents a sulfonyl group or a carbonyl group. R1represents a monovalent organic group having 1-20 carbon atoms. X+ represents a monovalent onium cation.* represents a bond between the polymer and another structure.)
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
This biomimetic system includes a container and a film that contains cells similar to human cholangiocytes. The film that contains cells similar to human cholangiocytes includes a permeable substrate and two-dimensional tissue of cells similar to human cholangiocytes layered on one side of the permeable substrate. The film that contains cells similar to human cholangiocytes partitions the container into a first section and a second section; and the one side of the permeable substrate is exposed in the first section, while another side of the permeable substrate is exposed in the second section. The cells similar to human cholangiocytes express P-gp; and the efflux ratio calculated using formula (1) is at least 1.5. (1): Efflux ratio = (permeation speed of rhodamine 123 passing from the second section to the first section) / (permeation speed of rhodamine 123 passing from the first section to the second section)
Provided is a method for forming a metal-containing film, the method comprising a step for coating, on a substrate, a composition for forming a metal-containing film, and a step for heating the coated film formed by the coating step at 200-500°C, wherein: the composition for forming a metal-containing film contains a metal compound, a carbazic acid ester derivative, and a solvent; and the carbazic acid ester derivative comprises at least one compound selected from the group consisting of a compound represented by formula (1) and a compound represented by formula (2). Note that R11and R21are each independently a monovalent organic group having 1-20 carbons, R12, R13, R14, and R22are each independently a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1-10 carbons, and R23 is a substituted or unsubstituted divalent aliphatic hydrocarbon group having 1-10 carbons.
C23C 18/02 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
An information processing device (10) according to the present invention comprises a storage unit (201), a reception unit (101), a condition extraction unit (102), and an output control unit (103). The storage unit (201) stores experiment condition information including a plurality of experiment conditions for performance experiments regarding a lithography material to be used in a semiconductor lithography process, the experiment condition information being stored for each performance experiment. The reception unit (101) receives an input of utilization condition information including a plurality of utilization conditions in which the lithography material is to be utilized. The condition extraction unit (102) extracts experiment condition information similar to the inputted utilization condition information from among the plurality of experiment condition information stored in the storage unit (201). The output control unit (103) outputs the extracted experiment condition information.
METAL-CONTAINING FILM FORMATION COMPOSITION, METAL-CONTAINING FILM, METAL-CONTAINING FILM FORMATION METHOD, AND PRODUCTION METHOD OF METAL-CONTAINING FILM FORMATION COMPOSITION
Provided are: a metal-containing film formation composition from which a metal-containing film having excellent electric conductivity can be formed; a metal-containing film; a metal-containing film formation method; and a production method of a metal-containing film formation composition. This metal-containing film formation composition contains a metallic compound, a compound having an oxymethylene structure, and a solvent. The metallic compound is a metal salt or a metal complex. The compound having the oxymethylene structure generates an aldehyde structure when being degraded through heating. Metal atoms included in the metallic compound preferably belong to group 2 to group 14 and in third period to seventh period in the periodic table. The metal atoms are preferably those of copper.
C23C 18/08 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
98.
RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD
Provided are a radiation-sensitive resin composition and a pattern formation method that make it possible to form a resist film that exhibits an excellent sensitivity, CDU performance, and development defect performance, even when next-generation technology is applied. The radiation-sensitive resin composition comprises a resin A that contains, inter alia, a structural unit given by formula (1) (in the formula, R1 represents a hydrogen atom, C1-C5 alkyl group, C1-C5 halogenated alkyl group, etc.); a resin B that contains a structural unit having an acid-dissociable group; one or two or more salts containing an organic acid anion moiety and a cation moiety; and a solvent. The salt contains a carboxylic acid anion in the organic acid anion moiety, and at least a portion of the organic acid anion moiety in the salt contains an iodine-substituted aromatic ring structure.
Provided are a radiation-sensitive resin composition, a resin, a compound, and a pattern formation method with which it is possible to form a resist film that has excellent sensitivity, CDU performance, and resolution when next-generation technology is applied. A radiation-sensitive resin composition that includes: a resin including a structural unit (I) represented by formula (1); a radiation-sensitive acid generator including an organic acid anion moiety and an onium cation moiety; and a solvent. (In formula (1), Rais a hydrogen atom or a substituted or unsubstituted C1-10 monovalent hydrocarbon group. Ar1is a substituted or unsubstituted C6-20 divalent aromatic hydrocarbon group. m is 0 or 1. L1is -O-, *-COO-, a C1-20 divalent hydrocarbon group, or a combination of two or more thereof or is a single bond. *is a bond on the Ar1side. Ar2is a substituted or unsubstituted C6-20 monovalent aromatic hydrocarbon group. X is a an iodine atom or bromine atom substituting a hydrogen atom in a monovalent aromatic hydrocarbon group represented by Ar211 is an integer of 1 to (the number of hydrogen atoms in a monovalent aromatic hydrocarbon group represented by Ar2).)
[Problem] To provide a technique for suppressing deterioration of liquid permeability and pressure resistance characteristics during liquid passage of a chromatography carrier when a solvent has been substituted with an aqueous solvent that does not contain a buffering agent. [Solution] A method for filling a column with a chromatography carrier, said method comprising step 1 and step 2 below. (Step 1) A substitution step for substituting, with an aqueous solvent that does not contain a buffering agent, a slurry containing a target substance capturing chromatography carrier, a buffering agent having an acid dissociation constant (pKa) within a range of ±1.0 of the isoelectric point of the buffering agent, and an aqueous solvent, the liquid-phase pH having been adjusted to be within a range of ±2.0 of the isoelectric point of the carrier. (Step 2) A filling step for filling a column with the slurry for which the solvent substitution has been carried out in step 1
patents
