An embodiment relates to a display device comprising a semiconductor light-emitting element. A display device comprising a semiconductor light-emitting element according to an embodiment may comprise: a substrate; a first electrode and a second electrode which are disposed spaced apart from each other on the substrate; a first insulation layer disposed on the first and second electrodes; an assembly partition wall which includes a predetermined assembly hole and is disposed on the first insulation layer; a semiconductor light-emitting element disposed within the assembly hole; side surface wiring electrically connected to a side surface of the semiconductor light-emitting element; and a second panel electrode electrically connected to the upper side of the semiconductor light-emitting element. The semiconductor light-emitting element may include a light-emitting structure and a heat transfer insulation layer disposed outside the light-emitting structure.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
2.
DISPLAY APPARATUS OF SEMICONDUCTOR LIGHT EMITTING DEVICE
An embodiment relates to a display apparatus of a semiconductor light emitting device. A display apparatus of a semiconductor light emitting device according to an embodiment may comprise: a substrate of a first display module and a substrate of a second display module arranged adjacently; a plurality of semiconductor light emitting device assemblies respectively disposed on the substrates of the first and second display modules; first and second side wirings which are respectively disposed on side surfaces of the substrates of the first and second display modules and are electrically connected to the semiconductor light emitting device assemblies; and a porous adhesive resin layer disposed between the substrate of the first display module and the substrate of the second display module.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
3.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
An embodiment relates to a display device comprising a semiconductor light-emitting element. A display device comprising a conductor light-emitting element according to an embodiment comprises: a substrate; a first assembly electrode and a second assembly electrode which are disposed spaced apart from each other on the substrate; a zeta potential insulation layer of a first polarity, the zeta potential insulation layer being disposed on the first and second assembly electrodes; an assembly partition wall having an assembly hole and disposed on the first and second assembly electrodes; and a semiconductor light-emitting element disposed in the assembly hole, wherein the semiconductor light-emitting element may include a zeta potential metal layer of a second polarity.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
The display device comprises: a substrate; a first assembly wiring and a second assembly wiring on the substrate; a partitioning wall which is disposed at the first assembly wiring and the second assembly wiring, and which has an assembly hole and at least one auxiliary hole extending outward the assembly hole; a semiconductor light-emitting element in the assembly hole; and a connection electrode connected to a side portion of the semiconductor light-emitting element. The partitioning wall can include a first partitioning wall layer and a second partitioning wall layer on the first partitioning wall layer. The ashing rate of the first partitioning wall layer is greater than or equal to the ashing rate of the second partitioning wall layer.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
The display device comprises: a substrate; a first assembly wiring and a second assembly wiring on the substrate; an insulating layer having a recess on the first assembly wiring and the second assembly wiring; a partitioning wall which is disposed on the first assembly wiring and the second assembly wiring, and which has an assembly hole in contact with the recess; a semiconductor light-emitting element in the assembly hole; a fixing member in the recess; and a connection electrode between the outer surface of the semiconductor light-emitting element and the inner surface of the assembly hole. The fixing member and the connection electrode include an aggregate of lumps in which a plurality of conductive nanoparticles are stuck to each other.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
This display device comprises a plurality of pixels. Each of the plurality of pixels comprises: a substrate comprising a plurality of sub-pixels; a first assembly wiring and a second assembly wiring in each of the plurality of sub-pixels; a partition wall having an assembly hole on the first assembly wiring and the second assembly wiring; a semiconductor light-emitting element in the assembly hole; and a signal supply unit which is connected to the first assembly wiring and the second assembly wiring and selectively supplies an alternating current signal and a direct current signal.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
7.
ASSEMBLY SUBSTRATE STRUCTURE OF SEMICONDUCTOR LIGHT-EMITTING DIODE DISPLAY DEVICE AND DISPLAY DEVICE COMPRISING SAME
An embodiment relates to an assembly substrate structure of a semiconductor light-emitting diode display device and a display device comprising same. The assembly substrate structure of a semiconductor light-emitting diode display device according to an embodiment may comprise: a substrate; a first assembly electrode and a second assembly electrode spaced apart from each other on the substrate; a magnetic body structure disposed below the first assembly electrode and the second assembly electrode; and an insulating layer disposed between the first and second assembly electrodes and the magnetic body structure.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
8.
ASSEMBLY SUBSTRATE STRUCTURE FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT FOR DISPLAY PIXEL, AND DISPLAY DEVICE COMPRISING SAME
An embodiment relates to an assembly substrate structure for a semiconductor light-emitting element for a display pixel, and a display device comprising same. The assembly substrate structure for a semiconductor light-emitting element for a display pixel, according to an embodiment, may comprise: a first assembly electrode and a second assembly electrode which are arranged on a substrate to be spaced apart from each other; an assembly partition wall which includes a predetermined assembly hole and is disposed on the first assembly electrode and the second assembly electrode; and a first lateral assembly electrode or a second lateral assembly electrode which is electrically connected to the first assembly electrode or the second assembly electrode respectively.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
A display device comprises: a substrate; a first assembly wire on the substrate; a second assembly wire on the substrate; a partition wall including an assembly hole on the first and second assembly wires; a semiconductor light-emitting element in the assembly hole; a connection electrode at the side of the semiconductor light-emitting element; and an electrode wire on the semiconductor light-emitting element. Each of the first and second assembly wires comprises: a first conductive electrode vertically overlapping the assembly hole; and a second conductive electrode connected to the first conductive electrode and vertically overlapping the semiconductor light-emitting element.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
A display device comprises: a first sub-pixel including a pair of first assembly wires, a first assembly hole, and a first semiconductor light-emitting element in the first assembly hole; a second sub-pixel including a pair of second assembly wires, a second assembly hole, and a second semiconductor light-emitting element in the second assembly hole; and a third sub-pixel including a pair of third assembly wires, a third assembly hole, and a third semiconductor light-emitting element in the third assembly hole. The first assembly hole, the second assembly hole, and the third assembly hole may have different sizes. The first semiconductor light-emitting device may include a first ring electrode. The pair of first assembly wires may include, at the edges of the first assembly hole, a 1-1st assembly wire and a 1-2nd assembly wire having a first gap region. The first ring electrode of the first semiconductor light-emitting element is located in the first gap region.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A display device comprises: a substrate including a subpixel; a first assembly wire disposed in one direction on the substrate; a second assembly wire disposed parallel to the first assembly wire; a partition wall disposed on the first assembly wire and the second assembly wire and including a first hole in the subpixel; and a semiconductor light-emitting element in the first hole. The second assembly wire may surround a partial area of the first assembly wire. The second assembly wire and the partial area of the first assembly wire have a predetermined gap therebetween in the edge area of the first hole.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
This display device comprises: a substrate; a first assembly wiring on the substrate; a second assembly wiring on the substrate; an adjustment member under the second assembly wiring; an insulating layer on the first assembly wiring and the second assembly wiring; a partition wall on the first assembly wiring and the second wiring, the partition wall comprising an assembly hole; and a semiconductor light-emitting element in the assembly hole.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
13.
ASSEMBLY SUBSTRATE STRUCTURE OF DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE COMPRISING SAME
This embodiment relates to a display device comprising a semiconductor light-emitting element. The display device comprising a semiconductor light-emitting element according to the embodiment may comprise: a substrate; a first assembly electrode disposed on the substrate; a second assembly electrode disposed over the first assembly electrode; an insulating layer disposed between the first assembly electrode and the second assembly electrode; a first metal layer disposed over the insulating layer and disposed to vertically overlap with the first assembly electrode; and an assembly partition having a predetermined assembly hole and disposed on the first metal layer and the second assembly electrode.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
This display device comprises: a substrate including a plurality of sub-pixels; first assembly wiring in each of the plurality of sub-pixels; second assembly wiring in each of the plurality of sub-pixels; a partition wall having an assembly hole on the first assembly wiring and the second assembly wiring; and a semiconductor light-emitting element in the assembly hole. The first assembly wiring may include a first bus line and a first assembly electrode on the first bus line. A portion of the first bus line may be disposed adjacent to the assembly hole, and a portion of the first assembly electrode may be disposed in the assembly hole.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A display device comprises: a substrate; a first assembly wiring on the substrate; a second assembly wiring on top of the first assembly wiring; an insulating layer between the first assembly wiring and the second assembly wiring; a barrier rib disposed on the second assembly wiring and having an assembly hole; and a semiconductor light-emitting device in the assembly hole. A portion of the second assembly wiring may be disposed at the center of the assembly hole, and the width of the portion of the second assembly wiring may be smaller than the diameter of the assembly hole.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
16.
DISPLAY APPARATUS OF SEMICONDUCTOR LIGHT-EMITTING DEVICE
An embodiment relates to a display apparatus comprising a semiconductor light-emitting device. The display apparatus comprising a semiconductor light-emitting device, according to an embodiment, can comprise: a substrate; a first assembly electrode and a second assembly electrode arranged on the substrate so as to be spaced apart from each other; an insulation layer arranged on the first assembly electrode and the second assembly electrode; an assembly partition wall, which includes a predetermined assembly hole and is arranged on the insulation layer; a plating layer electrically connected to the first assembly electrode and the second assembly electrode; and the semiconductor light-emitting device arranged in the assembly hole and electrically connected to the first assembly electrode and the second assembly electrode by means of the plating layer. The insulation layer can comprise: a center insulation layer arranged on the lower surface of the semiconductor light-emitting device; and edge insulation layers arranged on both sides of the center insulation layer so as to be spaced apart from each other.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
17.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A display device according to an embodiment comprises: a substrate; a first assembly wiring and a second assembly wiring which are arranged on the substrate to be spaced apart from each other and each of which includes a conductive layer and a clad layer on the conductive layer; a structure which comes into contact with the second assembly wiring and has a reverse-tapered shape; a levelling layer which is disposed on the first and second assembly wiring and has an opening; and a light-emitting element which is disposed within the opening and has a first electrode overlapping the first and second assembly wiring, wherein the structure is arranged to cover a part of the upper surface of the conductive layer of the second assembly wiring.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
18.
ORGANIC LIGHT-EMITTING DIODE AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING SAME
The present disclosure relates to: an organic light-emitting diode in which a light-emitting material layer positioned between two electrodes comprises a first compound, in which an electron donor moiety and an electron acceptor moiety are linked by a carbon-carbon bond, and a second compound, in which boron and nitrogen form a condensed ring; an organic light-emitting device comprising the organic light-emitting diode. The first compound and the second compound may be included in the same light-emitting material layer or adjacent light-emitting material layers. By applying the light-emitting material layer including a first compound, in which an electron donor moiety and an electron acceptor moiety are linked by a carbon-carbon bond having high binding energy, and a second compound having an adjusted energy level compared to the first compound, the driving voltage of the organic light-emitting diode can be lowered and the luminous efficiency and luminous lifespan thereof can be improved.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
19.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A display device according to an embodiment comprises: a substrate; a first planarization layer on the substrate, the first planarization layer including a first opening; first and second assembly lines arranged within the first opening and on the first planarization layer while being spaced apart from each other; a second planarization layer covering a part of the first and second assembly lines and including a second opening; a light-emitting element arranged within the second opening and having a first electrode overlapping the first and second assembly lines; and an insulating layer covering the first or second assembly line arranged within the first opening, wherein the first electrode is bonded to one of the first and second assembly lines.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
20.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND MANUFACTURING METHOD THEREFOR
A display device and a manufacturing method therefor, according to an embodiment, comprise a substrate; a first assembly wiring and a second assembly wiring alternately arranged on the substrate; an insulating layer arranged between the first assembly wiring and the second assembly wiring; a planarization layer, which is arranged on the first assembly wiring and the second assembly wiring and has a first opening; and a light-emitting element, which is arranged inside the first opening and has a first electrode overlapping on the first assembly wiring and the second assembly wiring. In addition, the first electrode is in contact with either the first assembly wiring or the second assembly wiring, and the second assembly wiring comprises a transparent conductive layer.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
21.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT EMITTING ELEMENT
A display device according to an embodiment comprises: a substrate; a first assembly wiring and a second assembly wiring spaced apart from each other on the substrate; a first insulating layer disposed between the first assembly wiring and the second assembly wiring; a first planarization layer which is disposed on the second assembly wiring and has an opening portion which overlaps the second assembly wiring; a light emitting element which is disposed inside the opening portion and comprises a first semiconductor layer and a second semiconductor layer on the first semiconductor layer; and a contact electrode which electrically connects the second assembly wiring and the first semiconductor layer, wherein the contact electrode is in contact with a side surface of the first semiconductor layer and the second assembly wiring which overlaps the first planarization layer.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
22.
ASSEMBLY SUBSTRATE STRUCTURE OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT DISPLAY DEVICE, AND DISPLAY DEVICE COMPRISING SAME
An embodiment relates to a display device comprising a semiconductor light-emitting element. The display device comprising a semiconductor light-emitting element, according to an embodiment may comprise: a substrate; a first assembly electrode arranged on the substrate; a second assembly electrode arranged to be branched at an upper side of the first assembly electrode; an insulating layer arranged between the first assembly electrode and the second assembly electrode; an assembly partition wall comprising a predetermined assembly hole and arranged on the second assembly electrode; and a semiconductor light-emitting element arranged in the assembly hole and electrically connected to the second assembly electrode.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
23.
SUBSTRATE STRUCTURE FOR TRANSCRIPTION OF SEMICONDUCTOR LIGHT EMITTING DEVICE FOR PIXEL, AND DISPLAY DEVICE COMPRISING SAME
A substrate structure for transcription of a semiconductor light emitting device for a pixel according to an embodiment comprises: a substrate having a plurality of assembly wirings; and a partition disposed on the substrate and having an assembly hole in which the predetermined semiconductor light emitting device is assembled, wherein the partition may include a porous structure.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
24.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A display device comprising a semiconductor light-emitting element, according to an embodiment, comprises: a substrate; first and second assembly lines arranged on the substrate to be spaced apart from each other; a planarization layer disposed on the first and second assembly lines and having an opening overlapping the first and second assembly lines; and a light-emitting element disposed within the opening and including a first electrode electrically connected to the first assembly line, wherein the opening includes a main opening and one or more auxiliary openings connected to the main opening and smaller than the main opening.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
25.
ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE HAVING THEREOF
An organic light emitting diode (OLED) in which at least one emitting material layer includes a dopant having the structure represented by Formula 1 and a biscarbazole-base host and/or an azine-based host, and an organic light emitting device including the OLED. The OLED and the organic light emitting device including the host and the dopant can improve their luminous efficiency and luminous lifespan. [Formula 1]
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
A display device and a manufacturing method therefor, according to an embodiment, comprise: a substrate; a first assembly wiring and a second assembly wiring that are alternately arranged on the substrate and overlapped on each other; an insulation layer arranged between the first assembly wiring and the second assembly wiring; a planarization layer, which is arranged on the first assembly wiring and the second assembly wiring and has a first opening; and a light-emitting element, which is arranged inside the first opening, and has a first electrode overlapping on the first assembly wiring and the second assembly wiring. In addition, the first electrode is bonded to either the first assembly wiring or the second assembly wiring.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
27.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENTS
A display device according to an embodiment comprises: a substrate; a plurality of assembly lines disposed on the substrate and including first assembly lines and second assembly lines which are alternately arranged; a planarization layer having a plurality of openings which overlap the plurality of assembly lines respectively; a plurality of light-emitting elements disposed in the plurality of openings respectively; and a plurality of conductive connection members disposed in the plurality of openings respectively to electrically connect the plurality of assembly lines and the plurality of light-emitting elements to each other, wherein the planarization layer protrudes more inwardly of the plurality of openings than one end of the respective assembly lines, and one end of the respective assembly lines is exposed from the planarization layer and comes into contact with the plurality of conductive connection members.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
A display device comprises: a substrate; first and second assembly wirings on the substrate; a first insulation layer on the first and second assembly wirings; a barrier wall having a hole on the first insulation layer; a semiconductor light-emitting element in the hole; and a connection portion which electrically connects a side portion of the semiconductor light-emitting element and at least one assembly wiring of the first and second assembly wirings. The gap between the inside of the hole and the outside of the semiconductor light-emitting element may be 50-200% of the thickness of the semiconductor light-emitting element.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
An embodiment relates to a display device comprising a semiconductor light-emitting element. The display device comprising a semiconductor light-emitting element, according to an embodiment, may comprise: a substrate; a first assembly electrode disposed on the substrate; a second assembly electrode disposed on the first assembly electrode; an insulation layer disposed between the first assembly electrode and the second assembly electrode; an assembly partition wall, which includes a predetermined assembly hole and is disposed on the second assembly electrode; and the semiconductor light-emitting element, which is disposed in the assembly hole and is electrically connected to the second assembly electrode.
The present invention relates to: an organic light-emitting diode in which a light-emitting material layer disposed between two electrodes includes a first compound, in which boron and at least one of oxygen, sulfur, or selenium form a condensed ring, and a second compound, in which boron and nitrogen form a condensed ring; and an organic light-emitting device comprising the organic light-emitting diode. The first compound and the second compound may be included in the same light-emitting material layer or in adjacent light-emitting material layers. It is possible to lower the driving voltage and improve the light emission efficiency and light emission lifespan of the organic light-emitting diode by employing the light-emitting material layer including the first and second compounds for which the energy levels can be controlled.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
The present invention can be applied to a display-apparatus-related technical field, and relates to a display apparatus using, for example, a micro light emitting diode (LED), and a manufacturing method therefor. The present invention may comprise: a substrate including a pixel area and a pad area positioned in the vicinity of the pixel area; a barrier layer, which is positioned on the substrate and defines a plurality of unit pixel regions in the pixel area; a stress separation line, on the barrier layer, positioned between the unit pixel regions; a first electrode positioned in the unit pixel region; a semiconductor light-emitting device provided in the unit pixel region by electrically connecting a first-type electrode to the first electrode; a coating layer formed on the semiconductor light-emitting device and the barrier layer; and a second electrode, on the coating layer, electrically connected to a second-type electrode of the semiconductor light-emitting device.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A display device comprises: a substrate having a plurality of assembly regions and a non-assembly region; a first partition wall disposed on the plurality of assembly regions and having an assembly hole; a second partition wall disposed on the non-assembly region; and a semiconductor light-emitting element in the assembly hole, wherein the thickness of the second partition wall is greater than that of the first partition wall.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
33.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENTS AND METHOD FOR MANUFACTURING SAME
A method for manufacturing a display device according to an embodiment comprises the steps of: self-aligning a light-emitting element in an opening of a planarization layer, the opening overlapping a first assembly line and a second assembly line; successively forming a conductive layer and an organic layer on the planarization layer and the light-emitting element; ashing the organic layer to remove a second portion on a first portion of the organic layer; and etching the conductive layer corresponding to the second portion to form a contact electrode, wherein the contact electrode comes into contact with the flank of a first semiconductor layer at the bottom of the light-emitting element.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A display device comprises: a substrate; a plurality of first assembly wirings on the substrate; a plurality of second assembly wirings on the substrate; a first insulating layer disposed on the substrate and having first holes on the respective upper surfaces of the plurality of second assembly wirings; and semiconductor light-emitting devices in the respective first holes. The embodiment enables increasing the assembly rate and preventing assembly defects.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
35.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT EMITTING ELEMENT
A display device according to an embodiment comprises: a substrate; a first assembly wiring and a second assembly wiring alternately arranged on the substrate and spaced apart from each other; an insulating layer arranged on the first assembly wiring or the second assembly wiring; a planarization layer arranged on the first assembly wiring and the second assembly wiring and having an opening; and a light emitting element arranged inside the opening and having a first electrode overlapping the first assembly wiring and the second assembly wiring. In addition, the first assembly wiring and the second assembly wiring may be arranged on the same layer.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
36.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A display device according to an embodiment may comprise: a substrate; first and second assembly lines which are alternately disposed on the substrate and are spaced apart from each other; a planarization layer which is disposed on the first and second assembly lines and has an opening and a contact portion; a light-emitting element which is disposed inside the opening and has a first electrode overlapping the first and second assembly lines; and a pixel electrode which is disposed on the planarization layer and comes into contact with a second electrode of the light-emitting element through the contact portion, wherein a plurality of contact portions overlap a part of at least one edge of the area where the light-emitting element is disposed.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
37.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A display device according to an embodiment comprises: a substrate; first assembly wirings and second assembly wirings alternately disposed on the substrate and distanced from each other; first insulation layers, which are disposed between the first assembly wirings and the second assembly wirings and have a first thickness and a second thickness that differ from each other; planarization layers, which are disposed on the first assembly wirings and the second assembly wirings and have first openings; and light-emitting elements, which are disposed on the inner sides of the first openings and have first electrodes that overlaps on the first assembly wirings and the second assembly wirings, wherein the first electrodes can be electrically connected to either the first assembly wirings or the second assembly wirings.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
38.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A display device comprising a semiconductor light-emitting diode according to one embodiment comprises: a substrate; first assembly wirings and second assembly wirings, which are alternately disposed on the substrate and are spaced apart from each other; a planarizing layer disposed on the first assembly wirings and the second assembly wirings, and having an opening and a contact hole; a light-emitting element disposed on the inside of the opening of the planarizing layer, and having a first electrode overlapping the first assembly wirings and the second assembly wirings; and a first light absorption layer which has light absorption properties and is disposed so as to surround an area in which the light-emitting element is located.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A display device comprising a semiconductor light-emitting diode according to one embodiment comprises: a substrate; first assembly wirings and second assembly wirings which are alternately disposed on the substrate and are away from each other; a planarizing layer disposed on the first assembly wirings and the second assembly wirings and having a first opening; and a light-emitting diode disposed on the inside of the first opening and having a first electrode overlapping the plurality of first assembly wirings and the plurality of second assembly wirings, wherein the first electrode may be electrically connected to either the first assembly wirings or the second assembly wirings.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
40.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT EMITTING ELEMENT
A display device including a semiconductor light emitting element according to an embodiment, the display device comprises: a substrate; a first assembly wiring and a second assembly wiring which are alternately arranged on the substrate and are spaced apart from each other; a planarization layer which is arranged on the first assembly wiring and the second assembly wiring and has a first opening part; a semiconductor light emitting element which is arranged inside the first opening part and in which a first electrode overlaps the first assembly wiring and the second assembly wiring; and an assembly wiring connection pattern which is spaced apart from the first opening part and electrically connects the first assembly wiring and the second assembly wiring, wherein the first electrode may be electrically connected with one of the first assembly wiring and the second assembly wiring.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
41.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
A display device, according to one embodiment of the present invention, comprises: a substrate including a plurality of sub-pixels; a plurality of thin film transistors disposed on the substrate; a planarization layer disposed on the plurality of thin film transistors; a plurality of first electrodes disposed on the planarization layer, and electrically connected to the plurality of thin film transistors; a plurality of second electrodes disposed on the planarization layer, and spaced apart from the plurality of first electrodes; a bank covering a portion of each of the plurality of first electrodes and the plurality of second electrodes, and disposed to define a light-emitting area; a plurality of light-emitting diodes disposed in the light-emitting area, and electrically connected to the plurality of first electrodes and the plurality of second electrodes; and a plurality of first conductive patterns disposed on the bank. Accordingly, self-alignment of the light-emitting diodes can be easily achieved.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
The present invention relates to a light-emitting display device in which the upper structure of a light-emitting device has been changed to omit a polarizing plate, and which thus has an improved color reproduction range and power consumption and also reduces luminance degradation resulting from a viewing angle change.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
A light-emitting display device of the present invention are intended to prevent a leakage current by applying, to sub-pixels of which the turn-on voltages are different from each other, different configurations of an electron blocking unit located adjacent to a light-emitting layer, and to reduce power consumption, thus improving the efficiency and visibility of the display device, the light-emitting display device comprising: a first electron blocking unit having at least two layers that are arranged in way of increasing bandgap between a first common layer and a first light-emitting layer in a first sub-pixel; and a second electron blocking unit having at least two layers that are arranged in way of decreasing bandgap between the first common layer and a second light-emitting layer in a second sub-pixel.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
The present invention comprises: a display panel; a cover shield disposed on the rear surface of the display panel; a magnetic part disposed on the rear surface of the display panel and having magnetism; a first packaging member disposed on a first side of the display panel and the cover shield; a second packaging member disposed on a second side opposite the first side; a third packaging member disposed on a third side of the display panel and the cover shield; a fourth packaging member disposed on a fourth side opposite the third side; and fixing plates that fix the first packaging member and the second packaging member to the magnetic part.
G09F 9/302 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
A display device according to one embodiment of the present invention comprises: a display panel; a cover shield arranged on the rear surface of the display panel; a curvature control member arranged on the inner side of the cover shield; and a rotary member, which is connected to both-side end portions of the curvature control member and couples the cover shield to the curvature control member, wherein the curvature control member is configured to rotate together with the rotary member, and the cover shield is formed to switch to a first state, which is a flat state, or a second state, which is a state of being bent to have a curvature, by means of the rotation of the curvature control member. Therefore, the curvature of the display device can be easily controlled with a simple structure and operation.
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
G09F 9/302 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
A display device according to one embodiment of the present invention comprises: a display panel; a plurality of panel magnets disposed on the rear surface of the display panel; a cover shield exposing the plurality of panel magnets; a packaging member; and a plurality of hinge members connected to the packaging member and the cover shield, wherein the packaging member comprises a plurality of first packaging members including a plurality of fixing plates arranged to be fixed to the plurality of panel magnets, and a plurality of second packaging members arranged to be fixed to the cover shield.
G09F 9/302 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
47.
ORGANIC COMPOUND, ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE HAVING THE COMPOUND
The present disclosure relates to an organic compound having the following structure of Formula 1, an organic light emitting diode (OLED) where an electron transport layer and/or a charge generation layer includes the organic compound and an organic light emitting device including the organic light emitting diode. While only the specific moiety in the organic compound is deuterated, the organic compound can implement excellent luminous efficiency and luminous lifespan as a compound where all the carbon atoms are deuterated. The OLED can maximize its luminous efficiency and luminous lifespan with minimizing utilization of expensive deuterium.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
48.
ORGANIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME
The present disclosure relates to an organic compound of Formula, and an organic light emitting diode and an organic light emitting display device including the organic compound. In Formula, X is oxygen (O) or sulfur (S), and each of R1 to R4 is independently selected from the group consisting of deuterium, halogen, cyano, C1 to C10 alkyl group, C1 to C10 alkoxy group, C3 to C30 cycloalkyl group, C6 to C30 aryl group, C6 to C30 arylamino group, and C5 to C30 heteroaryl group, wherein each of L1 and L2 is independent selected from the group consisting of C6 to C30 arylene group and C5 to C30 heteroarylene group, and wherein each of a and b is independent 0 or 1, each of c and f is independently an integer of 0 to 3, and each of d and e is independently an integer of 0 to 2.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
One embodiment of the present invention relates to a flat panel including a plurality of pixel regions, wherein each of the plurality of pixel regions comprises: a light-emitting region emitting light; a light-transmitting region adjacent to the light-emitting region and transmitting light; and a light-sensing region which is part of the light-emitting region and senses light. The flat panel comprises: a sensing array disposed on a first support substrate, and including a light-sensing element corresponding to the light-sensing region of each of the plurality of pixel regions; a micro lens disposed between the first support substrate and the light-sensing element; a first light-blocking wall disposed between the first support substrate and the light-sensing element, and corresponding to an edge of the light-sensing region of each of the plurality of pixel regions; and a light-emitting array disposed between the sensing array and a second support substrate, and including a light-emitting element corresponding to the light-emitting region of each of the plurality of pixel regions. The accuracy of detection signals generated by the light-sensing element can be improved by the micro lens and the first light-blocking wall.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
H04N 1/10 - Scanning arrangements using flat picture-bearing surfaces
A display device, according to one embodiment of the present invention, may comprise: a substrate; a plurality of sub-pixels disposed on the substrate; a plurality of anodes disposed at the plurality of sub-pixels; a bank disposed so as to cover the ends of the plurality of anodes; an organic layer disposed on the plurality of anodes and the bank; a cathode disposed on the organic layer; a first pattern disposed on the bank so as to enable the organic layer to have a step; and a second pattern disposed between the organic layer and the cathode so as to enable a step of the cathode to be smaller than the step of the organic layer.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
The present invention relates to a display device and a tiling display device. The display device according to an embodiment of the present invention comprises: a display panel; a plurality of mounting portions disposed on the rear surface of the display panel; and a back cover disposed on the rear surface of the display panel and the plurality of mounting portions. Each of the plurality of mounting portions comprises: a panel magnet fixed to the rear surface of the display panel; and a plurality of step adjustment parts disposed on both sides of the panel magnet and formed to be able to move in the perpendicular direction to one surface of the back cover. Therefore, the step of the display device can be adjusted in the Z-axis direction by moving the plurality of step adjustment parts in the perpendicular direction to one surface of the back cover.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
The display apparatus according to an embodiment of the present specification comprises: a panel which includes a light-emitting area and at least one non-light-emitting area; a light-emitting element which is disposed in the light-emitting area and comprises a first electrode, a light-emitting stack, and a second electrode; a light conversion part which defines an opening of the light-emitting area and includes a light conversion material; and a capping layer which is disposed on the second electrode, wherein the light conversion part includes a light conversion layer and a light amplification part.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
The present disclosure relates to a display device comprising a piezoelectric film-type actuator, and having a structure in which a groove is provided on a rear metal layer for supporting and sealing a rear surface of a display panel, and the metal piezoelectric film-type actuator is disposed in the groove. According to the present disclosure, it is possible to reduce the overall thickness of the device, and increase the heat dissipation performance thereof.
The present disclosure relates to an organic light emitting diode that includes a first electrode; a second electrode facing the first electrode; and an emitting material layer including a first compound and a second compound and positioned between the first and second electrodes. An energy level of the first compound and an energy level of the second compound satisfy a pre-determined condition. Further, an organic light emitting device may include the organic light emitting diode. Further, the present disclosure relates to an organic light emitting device may include the organic light emitting diode.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
The present disclosure relates to an organic light emitting diode that includes a first electrode; a second electrode facing the first electrode; and a first emitting material layer including a first compound and a second compound and positioned between the first and second electrodes, wherein an overlap ratio between an absorption spectrum of the first compound and an emission spectrum of the second compound is equal to or greater than 35%, and an organic light emitting display including the organic light emitting diode.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
56.
ORGANIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME
The present disclosure relates to an organic compound of Formula, and an organic light emitting diode including the organic compound of Formula and an organic light emitting display device including the organic compound.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
A display device according to one embodiment described in the present specification comprises: a display panel having a plurality of pixels; a timing controller for receiving a compensation command signal within a vertical blank section in which image data is not written by the pixels; and a sensing circuit for sensing driving characteristics of the pixels in one or more sensing sections corresponding to the compensation command signal. The length of the vertical blank section is different in a first frame and a second frame, and the number of the sensing sections having a predetermined length varies according to the length of the vertical blank section.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
A display device according to an embodiment of the present specification comprises: a display panel including a pixel having a driving element and a light emitting element; a host system which renders image data to be written on the pixel while changing the length of a vertical blank period, and outputs a rendering completion signal before the rendered image data; a timing controller which configures a sensing period within the vertical blank period on the basis of the rendering completion signal; and a sensing circuit which senses an electrical characteristic of the driving element within the sensing period, wherein the sensing period starts at a first timing before a predetermined time from an end time point of the vertical blank period, and the length of the predetermined time is fixed regardless of the length variation of the vertical blank period.
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
Disclosed in an embodiment is a display device comprising: a first display area including a plurality of first pixel groups; and a second display area including a plurality of second pixel groups and a transparent area, wherein each of the plurality of second pixel groups includes a plurality of sub pixels, and a light-emitting element of any one of the plurality of sub pixels is arranged in the transparent area.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
A display device according to an embodiment of the present invention comprises a color conversion substrate and color conversion layer which convert light of a first color emitted by an LED to a second color and emit the light in all directions. The present invention can reduce LED transfer processes as the color conversion layer is included, and light-emitting efficiency can be increased by using the side-surface light emitted from the LEDs.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/26 - Materials of the light emitting region
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
A stretchable display device according to an embodiment of the present invention comprises: a transistor substrate including first regions and a second region on a base substrate, the first regions including a plurality of pixel substrates arranged therein, the second region being disposed between the first regions to expose the surface of the base substrate; a connection wiring connecting the pixel substrates and adjacent pixel substrates, extending from the pixel substrates, and being disposed in the second region; and a reduction pattern spaced apart from the connection wiring and disposed on the second region, wherein the reduction pattern includes a first reduction pattern disposed on the second region and disposed to overlap the connection wiring disposed in the second region, and a second reduction pattern spaced apart from the first reduction pattern by a first interval and disposed to have a shape corresponding to a partial region of the connection wiring along the shape of the connection wiring.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
62.
DISPLAY APPARATUS, METHOD FOR COMPENSATING FOR DATA SIGNAL THEREOF, AND METHOD FOR GENERATING DEEP LEARNING-BASED COMPENSATION MODEL
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY (Republic of Korea)
Inventor
Chang, Joon-Hyuk
Ji, Kwanghwan
Park, Kwan-Ho
Chang, Kiseok
Seo, Junghoon
Hong, Kipyo
Park, Hyojung
Lee, Seunghyuck
Abstract
The present invention relates to a display apparatus that allows a compensated data voltage to be supplied to each pixel by compensating for the data voltage so as to prevent burn-in from occurring in a display panel, a method for compensating for a data signal thereof, and a method for generating a deep learning-based compensation model. To implement same, the present invention provides the display apparatus comprising a timing controller having mounted therein the compensation model generated by learning, in a deep learning method, the temperature, time, average brightness, and data voltage for each pixel. Accordingly, the present invention has an effect of preventing burn-in from occurring in each pixel by supplying each pixel with the compensated data voltage generated via the compensation model.
G09G 3/3275 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] - Details of drivers for data electrodes
G09G 3/3266 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] - Details of drivers for scan electrodes
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Republic of Korea)
Inventor
Ji, Kwanghwan
Chang, Kiseok
Park, Sang-Hee
Lee, Kwangheum
Kim, Do Hyung
Abstract
Disclosed in the present specification is a thin-film transistor comprising: a semiconductor substrate; an edge stopper; an interlayer insulation layer having a trench structure; a source electrode and a drain electrode which are disposed to be spaced apart; a buffer layer positioned on an internal sidewall of the interlayer insulation layer; an activation layer and a protection layer which have the trench structure; and a gate insulation layer and a gate electrode which have the trench structure.
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
64.
NONPOLAR ORGANOGEL COMPLEX COMPRISING NONPOLAR ORGANOGEL COMPOSITION AND METHOD FOR PREPARING SAME
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (Republic of Korea)
Inventor
Sun, Jeong Yun
Ji, Kwanghwan
Chang, Kiseok
Park, Jae-Man
Park, Jinwoo
Kim, Younghoon
Lee, Tae-Woo
Abstract
The present invention relates to an organogel complex comprising a nonpolar organogel composition and a method for preparing same. Since the nonpolar organogel composition according to the present invention exhibits non-polarity, the nonpolar organogel composition has the effect that stability from external environments such as water, organic solvents, or liquid ions exhibiting polarity is enhanced. In addition, the nonpolar organogel composition according to the present invention has the effect of exhibiting flexibility, high stretchability, and high transparency since intermolecular attraction is increased due to an aromatic interaction with an aromatic polymer and an aromatic organic solvent.
C08J 3/09 - Making solutions, dispersions, lattices or gels by other methods than by solution, emulsion or suspension polymerisation techniques in organic liquids
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (Republic of Korea)
Inventor
Kim, Jin Young
Chang, Kiseok
Ji, Kwanghwan
Park, Min-Ah
Park, Chong Rae
Sung, Sae Jin
Abstract
The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and can also be applied to a flexible device.
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
A display panel according to an embodiment of the present specification comprises: a substrate; an active electrode disposed on the substrate and comprising a source region, a drain region, and a panel region; and an active upper electrode disposed on the active electrode and having a curved shape. A channel region of the active electrode and the active upper electrode may overlap each other, and the channel region may have the same shape as the active upper electrode. Therefore, a driving element included in the display panel can generate a high driving current, and integration density in a pixel can be enhanced.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
67.
MICRO LED DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
According to the present specification, provided is a micro LED display device comprising: a substrate; a supply voltage line on the substrate; and a micro LED area positioned on the supply voltage line, wherein at least a portion of the supply voltage line is positioned at the vertical lower part of the micro LED area.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
68.
ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME
The present disclosure relates to an OLED that includes a first electrode; a second electrode facing the first electrode; a first emitting material layer including a first host being an anthracene derivative and a first dopant being a pyrene derivative and positioned between the first and second electrodes; and a first electron blocking layer including an electron blocking material of a heteroaryl-substituted amine derivative and positioned between the first electrode and the first emitting material layer, wherein at least one of hydrogen atoms in the anthracene derivative and the pyrene derivative is deuterated.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
A light-emitting display device according to the present invention comprises: a display panel including a first pixel group consisting of 2N rows of a plurality of pixels, and a second pixel group arranged next to the first pixel group and consisting of 2N rows of a plurality of pixels; and a light-emitting signal unit including a first light-emitting stage for applying identical first light-emitting signals to the first pixel group and a second light-emitting stage for applying identical second light-emitting signals to the second pixel group, wherein, in a first frame, the falling time of each of the first light-emitting signals differs from the rising time of each of the second light-emitting signals.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
A display device according to an embodiment of the present invention, comprises: a substrate including a plurality of concave portions; light-emitting elements arranged on the plurality of concave portions; a first insulating layer arranged on the substrate and the light-emitting elements; a transistor arranged on the first insulating layer and including an active electrode and a gate electrode; a first hole included in the active electrode; a second hole included in the first insulating layer; and connection electrodes arranged inside the first hole and the second hole, wherein the light-emitting elements can be electrically connected to the active electrode by the connection electrodes.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
71.
ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME
The present disclosure relates to an OLED that includes a first electrode; a second electrode facing the first electrode; and a first emitting material layer including a first host being an anthracene derivative and a first dopant being a pyrene derivative and positioned between the first and second electrodes, wherein at least one of an anthracene core of the first host and a pyrene core of the first dopant is deuterated.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
72.
ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME
The present disclosure relates to an OLED that includes a first electrode; a second electrode facing the first electrode; a first emitting material layer including a first host being an anthracene derivative and a first dopant being a pyrene derivative and positioned between the first and second electrodes; and a first electron blocking layer including an electron blocking material of an amine derivative including a polycyclic aryl group and positioned between the first electrode and the first emitting material layer, wherein at least one of hydrogen atoms in the anthracene derivative and the pyrene derivative is deuterated.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
73.
ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME
The present disclosure relates to an OLED that includes a first electrode; a second electrode facing the first electrode; a first emitting material layer including a first host being an anthracene derivative and a first dopant being a pyrene derivative and positioned between the first and second electrodes; and a first electron blocking layer including an electron blocking material of a spirofluorene-substituted amine derivative and positioned between the first electrode and the first emitting material layer, wherein at least one of hydrogen atoms in the anthracene derivative and the pyrene derivative is deuterated.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
A display device according to the present invention comprises a plurality of unit pixels, each of which is provided with a main pixel and an auxiliary pixel that emit the same color light; and a gate driver which is embedded in each of the plurality of unit pixels and provided with a plurality of stages, wherein each of the plurality of stages is provided with a scan driving circuit that outputs a first scan signal and a second scan signal, and a light emission driving circuit that outputs a light emission control signal, the output timing of the first scan signal supplied to the main pixel is the same as that of the first scan signal supplied to the auxiliary pixel, and the output timing of the second scan signal supplied to the main pixel may be different from that of the second scan signal supplied to the auxiliary pixel. Accordingly, in the present invention, the auxiliary pixel can emit light instead of the main pixel when the main pixel becomes faulty, and thus the display device has improved reliability with respect to faults.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
75.
LED DISPLAY DEVICE AND LED ELEMENT MANUFACTURING METHOD
The present application relates to an LED display device and, specifically, to an LED display device having high resolution and an increased light-emitting unit area. The present invention positions a first light-emitting region and a second light-emitting region so that same overlap and positions the first light-emitting region and a third light-emitting region so that same overlap, and thus can implement all of R, G and B colors in one pixel so that the size of the pixel can be smaller than that of a conventional display device requiring R, G and B sub pixels.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/26 - Materials of the light emitting region
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
76.
LED DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
According to an embodiment of the present specification, provided is an LED display device of which a manufacturing process is simplified by comprising at least one light-emitting diode integrated with a common electrode layer. An LED display device can be provided, in which a common electrode layer, which is an n-type semiconductor, is grown on a first substrate, which is a semiconductor substrate, followed by the formation of a first driving device, and a second driving device grown on another substrate is transferred onto the common electrode layer, thereby realizing pixels which emit light of different wavelengths, and of which a manufacturing process is simplified. The first substrate is bonded to a second substrate which faces the first substrate and has a plurality of pixel driving devices, thereby forming an LED display device. As such, an LED display device can be provided, which has improved reliability and at least one unit pixel consisting of a plurality of pixels by using at least one light-emitting diode integrated with the common electrode layer, and at least two individual light-emitting diodes.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
A method for manufacturing a display device according to an embodiment of the present invention comprises: a step of aligning a first wafer, on which a plurality of first LEDs, a plurality of aligning keys, and a reference member are formed, and a donor substrate; a step of transferring the plurality of first LEDs and the reference member on the first wafer onto the donor substrate; and a step of aligning a second wafer, on which a plurality of second LEDs are formed, and the donor substrate on the basis of the reference member. Therefore, on the basis of the reference member that maintains a constant distance from the plurality of first LEDs, relative positions between the plurality of second LEDs on the second wafer and the plurality of first LEDs on the donor substrate can be accurately aligned.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
The present application relates to an LED display device and, more particularly, to an LED display device including a repair structure for defective pixels. The present invention is intended to stack and position a sub-micro-LED on a micro-LED in which a defect has occurred, wherein the sub-micro-LED is electrically connected to first and second connection electrodes for applying voltage to the micro-LED. Accordingly, it is possible to prevent image quality degradation from occurring due to defective pixels, and since it is not necessary to separately remove the micro-LEDs in which defects have occurred, it is possible to reduce process costs and improve process efficiency.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
The present disclosure relates to an apparatus for transferring a light emitting diode (LED). The apparatus for transferring an LED comprises: a pick-up unit configured to pick up at least some of multiple light emitting diodes (LEDs) arranged on one substrate, and, according to a received control signal, put down LEDs selected from among the picked-up LEDs on another substrate; and a controller configured to transmit the control signal to the pick-up unit so as to enable the pick-up unit to individually pick up or put down each of the multiple LEDs.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A display device according to the present invention comprises: a display panel in which a plurality of unit pixels are arranged; and a gate driver which is disposed at the upper surface of the display panel and is embedded in the plurality of unit pixels, wherein each of the plurality of unit pixels comprises a main pixel and a sub-pixel, and the gate driver supplies a gate voltage to the main pixel and the sub-pixel. Accordingly, in the present invention, even when the main pixel is defective, the sub-pixel can emit light in place of the main pixel, and thus the display device has enhanced reliability against defects.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
An LED display apparatus, according to one embodiment of the present specification, comprises: a second pixel driving circuit disposed on a substrate; an LED device which is attached to a region which does not overlap with the second pixel driving circuit, includes a first LED device, a second LED device, and a growth substrate, and provides a double light-emitting spectrum; a device fixing layer surrounding the LED device; a first pixel driving circuit disposed on the device fixing layer; and a device protective layer disposed on the first pixel driving circuit. In addition, the first LED device is controlled by the first pixel driving circuit, and the second LED device is controlled by the second pixel driving circuit. Therefore, the LED display apparatus provides the double light-emitting spectrum, can implement high brightness and high precision, and can prevent pixel defects.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
The present invention relates to a mounting jig for manufacturing a tiling display device and a tiling display device manufacturing method using same. A mounting jig for manufacturing a tiling display device according to an embodiment of the present invention comprises: a support part; a plurality of jig magnets fixed to the support part; a hinge structure configured to rotate the plurality of jig magnets; and a guide rail which rotates corresponding to the rotation of the plurality of jig magnets and reduces damage caused at the time of detachment or attachment. Therefore, when the mounting jig is attached to a display device, the present invention can secure a safe distance by the guide rail disposed between the display device and the jig magnets and allows the mounting jig to be slowly attached without impacting the display device.
G09F 9/302 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
A display device and a method for manufacturing the display device are provided. The display device comprises: a substrate comprising pixels; light emitting diodes disposed on the pixels; insulating layers covering the light emitting diodes; light-concentrating structures which surround at least a part of the insulating layers, and the side surfaces of which form an inverse taper shape; and reflective layers disposed on the side surfaces of the light-concentrating structures.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
G02B 1/08 - Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
C09K 19/32 - Non-steroidal liquid crystal compounds containing condensed ring systems, i.e. fused, bridged or spiro ring systems
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
A display device according to an embodiment of the present invention comprises: a substrate on which a plurality of light emitting elements are disposed; a plurality of lines disposed on the upper surface of the substrate; a plurality of upper pads disposed on the upper surface of the substrate and connected to the plurality of lines; a plurality of link lines disposed on the lower surface of the substrate; a plurality of lower pads disposed on the lower surface of the substrate and connected to the plurality of link lines; and a plurality of side lines connecting the plurality of upper pads to the plurality of lower pads respectively, wherein the plurality of side lines comprise a plurality of first side lines and a plurality of second side lines, and the plurality of first side lines and the plurality of second side lines are disposed in different layers.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
A display apparatus according to an embodiment of the present invention, comprises: a display panel; a frame arranged on a rear surface of the display panel; a plurality of binders fixed on the rear surface of the display panel and arranged between the display panel and the frame; and a plurality of coupling members penetrating the frame and coupled to the plurality of binders. Therefore, the display panel and the frame can be easily attached to/detached from each other by using the plurality of binders and the plurality of coupling members.
G09F 9/302 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H05K 1/14 - Structural association of two or more printed circuits
87.
SIDE WIRING MANUFACTURING APPARATUS, SIDE WIRING MANUFACTURING METHOD, AND DISPLAY APPARATUS MANUFACTURING METHOD
Provided are a side wiring manufacturing apparatus, a side wiring manufacturing method, and a display apparatus manufacturing method. The side wiring manufacturing apparatus according to an embodiment of the present invention, comprises: a stage on which a substrate is loaded; a side guide configured to be arranged adjacent to a side portion of the substrate when the substrate is loaded on the stage; and a printing unit configured to print a conductive paste on the substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
88.
PRESSURE SENSOR, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE COMPRISING PRESSURE SENSOR
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (Republic of Korea)
Inventor
Shim, Woo Young
Jung, Soon Shin
Chang, Ki Seok
Kim, Tae Hoon
Abstract
A pressure sensor according to the present invention is disposed on the front surface of a display panel and is used for measuring touch pressure. The pressure sensor comprises: a first protection film and a second protection film which are transparent and face each other; a first electrode and a second electrode which are formed on the inner sides of the first protection film and the second protection film, respectively; and a dielectric layer which is disposed between the first electrode and the second electrode, wherein the dielectric layer is formed of polydimethylsiloxane (PDMS), and each of the first and the second electrode is formed of ethanol-added poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS).
UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY (Republic of Korea)
Inventor
Shim, Wooyoung
Jung, Soon-Shin
Chang, Kiseok
Min, Byungwook
Hwang, Dosik
Myoung, Jae Min
Kim, Taehoon
Yoon, Hong-Jib
Kim, Tae Seong
Jun, Yohan
Abstract
A capacitive pressure sensor according to an embodiment of the present invention comprises: electrode layers that are spaced apart from each other and formed of conductive polymers transmitting electromagnetic waves in the MHz band; and a first dielectric layer having first protrusions, and a second dielectric layer having second protrusions, the first and second dielectric layers disposed between the electrode layers, wherein the first dielectric layer and the second dielectric layer are laminated so that the first protrusions and the second protrusions face each other, and an air gap may be formed in at least a portion of the region between the first dielectric layer and the second dielectric layer. Accordingly, the capacitive pressure sensor according to an embodiment of the present invention may be compatible with a magnetic resonance imaging device and have improved sensitivity to pressure variation.
G01L 1/14 - Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
C08L 27/16 - Homopolymers or copolymers of vinylidene fluoride
Embodiments of the present invention relate to a thin film transistor and a display apparatus. A capacitor electrode is arranged on a gate electrode of a thin film transistor including double gate electrodes, thereby reducing an area occupied by a storage capacitor in a subpixel to improve use of a space. In addition, a gate electrode of the double gate electrodes, forming the storage capacitor, does not overlap a portion of a channel, but a portion of the capacitor electrode overlaps a portion of the channel, thereby enabling an electric field to be controlled by the capacitor electrode to provide the thin film transistor having high output current and current stability.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A light emitting display device according to an embodiment of the present invention comprises: a display panel comprising unit pixels; a first LED disposed in each of the unit pixels; and a second LED disposed in each of the unit pixels and emitting light having the same color as the first LED, wherein when the first LED and the second LED can normally emit light, the first LED and the second LED alternately emit light.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
92.
DONOR SUBSTRATE AND LED TRANSFER METHOD USING SAME
A donor substrate according to an embodiment of the present invention includes: a substrate; a resin layer arranged on one surface of the substrate; a plurality of first protrusions on the resin layer; and an alignment mark arranged on the surface of the substrate. Therefore, as the alignment mark is arranged on the surface of the substrate, it is possible to minimize the change in position of the alignment mark caused by the resin layer.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 33/54 - Encapsulations having a particular shape
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
93.
QUANTUM DOT, DISPLAY DEVICE COMPRISING SAME, AND METHOD FOR MANUFACTURING SAME DISPLAY DEVICE
KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION (Republic of Korea)
Inventor
Bang, Joon A
Chang, Ki Seok
Moon, Jeong Min
Jung, Soon Shin
Choi, Dong Hoon
Kim, Hyung Jong
Ko, Jae Wan
Abstract
Embodiments of the present specification relate to a quantum dot, a display device comprising same, and a method for manufacturing the display device. More specifically, the embodiments can provide a quantum dot comprising: a hole transporting functional group-bearing first repeating unit; and a photocrosslinkable functional group, and a display device comprising a quantum dot light emitting diode that can be formed into a quantum dot light emitting layer by a photolithography process.
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
94.
ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE HAVING THE SAME
ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (Republic of Korea)
Inventor
Kim, Do Han
Kang, Hye Seung
Park, Kyoung Jin
Kim, Chi Sik
Kim, Hyun
Abstract
The present disclosure relates to an organic light emitting diode that comprises an organic compound in which a carbazole moiety fused with an aromatic ring and a hetero aromatic ring is linked to a triazine moiety substituted with aromatic and/or hetero aromatic groups via an aromatic linker, and at least one protium constituting the aromatic and/or hetero aromatic groups of the triazine moiety and the aromatic linker moiety is substituted with deuterium, and an organic light emitting device including the diode. The molecular conformation of the deuterium-substituted triazine moiety and the aromatic linker moiety is not deteriorated and dissolved, and therefore, the organic compound can implement luminous efficiency and luminous lifetime as an organic compound in which whole protiums are substituted with deuteriums.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Republic of Korea)
Inventor
Ji, Kwanghwan
Park, Sang-Hee
Chang, Kiseok
Lee, Kwangheum
Kim, Dohyung
Abstract
Disclosed is a thin-film transistor comprising: a semiconductor substrate; an inter-layer insulation layer of a trench structure; a source electrode and a drain electrode disposed spaced apart from each other; a buffer layer positioned on an internal sidewall of the inter-layer insulation layer; an activation layer and a protection layer of the trench structure; and a gate insulation layer and a gate electrode of the trench structure.
The present disclosure relates to an organic compound including a substituted or non-substituted phenanthroline moiety and a substituted or non-substituted anthracene moiety and being partially deuterated and an organic light emitting diode includes the organic compound. The organic compound has improved electron transporting property and/or the charge generation property. According, the emitting efficiency and the lifespan of the OLED and the organic light emitting display device including the organic compound in the ETL and/or the CGL are improved.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Republic of Korea)
Inventor
Choi, Kyung Cheol
Ji, Kwanghwan
Chang, Kiseok
Hwang, Yong Ha
Abstract
The present specification discloses an organic light-emitting display device comprising an organic light-emitting fiber which comprises: a core fiber; a first electrode layer extending along the outer surface of the core fiber; a light-emitting layer extending along the outer surface of the first electrode layer; an insulation layer formed to have a plurality of segmented shapes above or below the light-emitting layer; and a second electrode layer formed to cover the insulation layer in a larger area than the insulation layer and formed to have a plurality of segmented shapes, wherein an electrical connection is formed between electronic elements of a display panel through a non-emitting region of the organic light-emitting fiber, so that the organic light-emitting display device has high resolution and exhibits stable display driving and light emission efficiency.
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
98.
PHOTOMASK, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING SAME
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSTIY (Republic of Korea)
Inventor
Shim, Yoo Young
Paik, Sang Yoon
Chang, Ki Seok
Jung, Soon Shin
Moon, Jeong Min
Abstract
Embodiments of the present specification relate to a photomask, a method for manufacturing same, and a method for manufacturing a display device using same and, more specifically, to a photomask comprising: a base layer having a recessed portion located on one side thereof; and a pattern layer filling the recessed portion and having one surface exposed, wherein the maximum depth of the recessed portion and the maximum thickness of the pattern layer correspond to each other, and thus, the photomask can expose a photoresist while in close contact with the photoresist and form a pattern having a fine line width even when a light source having a relatively long wavelength is used.
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Republic of Korea)
Inventor
Shin, Jong Hwa
Ji, Kwang Hwan
Chang, Ki Seok
Baucour, Arthur Jean Jacques
Abstract
The present invention relates to a conductive polarizing-color filter capable of simplifying the structure of a display device and remarkably reducing the thickness thereof, the filter comprising: a plurality of first electrodes which are made of a conductive material and which are arranged in a first direction with a set width and a set pitch; an insulation layer for covering the first electrodes; and second electrodes which are made of a conductive material, which are arranged on the insulation layer in the first direction, and which overlap with the first electrodes so as to form a waveguide that causes resonance with the first electrodes, wherein the first electrodes and the second electrodes reflect light, from incident light, that is parallel with the first electrodes and the second electrodes and transmit a light vertical thereto, and adjust an overlap area of the first electrodes and the second electrodes so as to cause the transmitted light to resonate at a set wavelength.
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (Republic of Korea)
Inventor
Jang, Ho Won
Jung, Ji Hwan
Chang, Ki Seok
Moon, Jeong Min
Jung, Soon Shin
Kim, Yeon Hoo
Kwon, Ki Chang
Abstract
22); and an electrode disposed on the gas sensing layer, wherein the room temperature-driven gas sensor optionally further comprises metal nanoparticles deposited on the thin film of niobium disulfide, has excellent sensitivity to gas at room temperature, and can be used reversibly.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 27/407 - Cells and probes with solid electrolytes for investigating or analysing gases
B82B 3/00 - Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups