A memory includes a local control circuitry that manages scrub transactions using a set of sense amplifiers separate from those used for access (read and write) transactions. The local control circuitry interrupts scrub transactions to prioritize access requests, thereby offering improved memory performance. The local control circuitry also divides scrub transactions into phases and periods based on whether the scrub transaction requires access to bitlines used for read and write access. This division allows the local control circuitry to interleave and interrupt scrub transactions with access transactions in a manner that minimizes access interference.
A dynamic random access memory (DRAM) component (e.g., module or integrated circuit) can be configured to have multiple rows in the same bank open concurrently. The controller of the component divides the address space of the banks into segments based on row address ranges. These row address ranges do not necessarily correspond to row address ranges of the bank's subarrays (a.k.a. memory array tiles—MATs). When a command is sent to open a row, the controller marks a plurality of the segments as blocked. The controller thereby tracks address ranges in a bank where it will not open a second row unless and until the first row is closed. The memory component may store information about which, and how many, segments should be blocked in response to opening a row. This information may be read by the controller during initialization.
An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.
Row hammer is mitigated by issuing, to a memory device, mitigation operation (MOP) commands in order to cause the refresh of rows at a specified vicinity of a suspected aggressor row. These mitigation operation commands are each associated with respective row addresses that indicate the suspected aggressor row and an indicator of which neighbor row in the vicinity of the suspected aggressor row is to be refreshed. The mitigation operation commands are issued in response to a fixed number of activate commands. The suspected aggressor row is selected by randomly choosing, with equal probability, one of the N previous activate commands to supply its associated row address as the suspected aggressor row address. The neighbor row may be selected randomly with a probability that diminishes inversely with the distance between the suspected aggressor row and the neighbor row.
Disclosed are techniques for storing data decompressed from the compressed pages of a memory block when servicing data access request from a host device of a memory system to the compressed page data in which the memory block has been compressed into multiple compressed pages. A cache buffer may store the decompressed data for a few compressed pages to save decompression memory space. The memory system may keep track of the number of accesses to the decompressed data in the cache and the number of compressed pages that have been decompressed into the cache to calculate a metric associated with the frequency of access to the compressed pages within the memory block. If the metric does not exceed a threshold, additional compressed pages are decompressed into the cache. Otherwise, all the compressed pages within the memory block are decompressed into a separately allocated memory space to reduce data access latency.
A dynamic memory array of a DRAM device is operated using a bitline voltage that is greater than the operating (i.e., switching) voltage of a majority of the digital logic circuitry of the DRAM device. The digital logic circuitry is operated using a supply voltage that is lower than the voltage used to store/retrieve data on the bitlines of the DRAM array. This allows lower voltage swing (and thus lower power) digital logic to be used for a majority of the non-storage array logic on the DRAM device—thus reducing the power consumption of the non-storage array logic which, in turn, reduces the power consumption of the DRAM device as a whole.
G11C 11/4091 - Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
G11C 11/4074 - Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
G11C 11/4094 - Bit-line management or control circuits
Memory modules, systems, memory controllers and associated methods are disclosed. In one embodiment, a memory module includes a module substrate having first and second memory devices. Buffer circuitry disposed on the substrate couples to the first and second memory devices via respective first and second secondary interfaces. The buffer circuitry includes a primary signaling interface for coupling to a group of signaling links associated with a memory controller. The primary signaling interface operates at a primary signaling rate and the first and second secondary data interfaces operate at a secondary signaling rate. During a first mode of operation, the primary interface signaling rate is at least twice the secondary signaling rate. A first time interval associated with a transfer of first column data via the first secondary interface temporally overlaps a second time interval involving second column data transferred via the second secondary interface.
A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.
G06F 11/10 - Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
G06F 11/16 - Error detection or correction of the data by redundancy in hardware
G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G11C 29/00 - Checking stores for correct operation; Testing stores during standby or offline operation
G11C 29/42 - Response verification devices using error correcting codes [ECC] or parity check
G11C 29/44 - Indication or identification of errors, e.g. for repair
G11C 29/52 - Protection of memory contents; Detection of errors in memory contents
H03M 13/15 - Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes
A cascaded memory system includes a memory module having a primary interface coupled to a memory controller via a first communication channel and a secondary interface coupled to a second memory module via a second communication channel. The first memory module buffers and repeats signals received on the primary and secondary interfaces to enable communications between the memory controller and the secondary memory module.
A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. The memory module additionally includes a command input port to receive command and address signals from a controller and, also in support of capacity extensions, a command relay circuit coupled to the command port to convey the commands and addresses from the memory module to another module or modules. Relaying commands and addresses introduces a delay, and the buffer system that manages communication between the memory controller and the memory devices can be configured to time data communication to account for that delay.
A buffer/interface device of the memory node may read and compress blocks of data (e.g., pages). When a memory buffer device compresses a block of data, it may keep storing the original uncompressed version in the original memory location (e.g., physical memory page). In this manner, an access directed to the block of data may be satisfied with the uncompressed version retrieved from the original memory location (e.g., physical memory page) without having to perform a decompression operation. As memory space is needed for other purposes (e.g., for an uncompressed copy of a recently decompressed block or as host allocated memory occupies more space), the original uncompressed versions of blocks (pages) that have not been accessed relatively recently (e.g., relative to other kept original uncompressed versions) may be evicted and replaced by other blocks of data (e.g., either compressed or uncompressed).
The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.
G06F 13/28 - Handling requests for interconnection or transfer for access to input/output bus using burst mode transfer, e.g. direct memory access, cycle steal
G06F 13/16 - Handling requests for interconnection or transfer for access to memory bus
G11C 5/04 - Supports for storage elements; Mounting or fixing of storage elements on such supports
G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
13.
LATENCY-CONTROLLED INTEGRITY AND DATA ENCRYPTION (IDE)
Technologies for providing integrity and data encryption (IDE) with zero latency are described. One receiving device with a cryptographic circuit having an Advanced Encryption Standard (AES) engine with a fixed epoch size and a fixed latency for IDE can send a delay parameter to a transmitting device. The delay parameter represents a number of clock cycles corresponding to the fixed latency. The cryptographic circuit can pre-determine, using the AES engine, AES data for a first epoch before first input data of the first epoch is received from the transmitting device. After the number of clock cycles, the cryptographic circuit can receive the first input data from the transmitting device. The cryptographic circuit can determine first output data for the first epoch using the AES data and the first input data without storing the AES data in a buffer.
H04L 9/06 - Arrangements for secret or secure communications; Network security protocols the encryption apparatus using shift registers or memories for blockwise coding, e.g. D.E.S. systems
G06F 1/14 - Time supervision arrangements, e.g. real time clock
A memory device includes a set of inputs, and a first register that includes a first register field to store a value for enabling application of one of a plurality of command/address (CA) on-die termination (ODT) impedance values to first inputs that receive the CA signals; and a second register field to store a value for enabling application of one of a plurality of chip select (CS) ODT impedance values to a second input that receives the CS signal. A third register field may store a value for enabling application of a clock (CK) ODT impedance value to third inputs that receive the CK signal.
This application is directed to a stacked semiconductor device assembly including a plurality of identical stacked integrated circuit (IC) devices. Each IC device further includes a master interface, a channel master circuit, a slave interface, a channel slave circuit, a memory core, and a modal pad configured to receive a selection signal for the IC device to communicate data using one of its channel master circuit or its channel slave circuit. In some implementations, the IC devices include a first IC device and one or more second IC devices. In accordance with the selection signal, the first IC device is configured to communicate read/write data via the channel master circuit of the first IC device, and each of the one or more second IC devices is configured to communicate respective read/write data via the channel slave circuit of the respective second IC device.
G11C 11/4096 - Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
G11C 16/26 - Sensing or reading circuits; Data output circuits
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 23/60 - Protection against electrostatic charges or discharges, e.g. Faraday shields
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
16.
Multi-element memory device with power control for individual elements
A multi-element device includes a plurality of memory elements, each of which includes a memory array, access circuitry to control access to the memory array, and power control circuitry. The power control circuitry, which includes one or more control registers for storing first and second control values, controls distribution of power to the access circuitry in accordance with the first control value, and controls distribution of power to the memory array in accordance with the second control value. Each memory element also includes sideband circuitry for enabling a host system to set at least the first control value and the second control value in the one or more control registers.
A combinational logic circuit includes input circuitry to receive a first and second input signals that transition between supply voltages of first and second voltage domain, respectively. The input circuitry generates, based on the first and second input signals, a first internal signal that transitions between one of the supply voltages of the first voltage domain and one of the supply voltages of the second voltage domain. Output circuitry within the combinational logic circuit generates an output signal that transitions between the upper and lower supply voltages of the first voltage domain in response to transition of the first internal signal.
G06F 7/503 - Half or full adders, i.e. basic adder cells for one denomination using carry switching, i.e. the incoming carry being connected directly, or only via an inverter, to the carry output under control of a carry propagate signal
G06F 7/502 - Half adders; Full adders consisting of two cascaded half adders
G06F 9/30 - Arrangements for executing machine instructions, e.g. instruction decode
H03K 19/00 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
H03K 19/0185 - Coupling arrangements; Interface arrangements using field-effect transistors only
18.
HIGH-SPEED CIRCUIT COMBINING AES AND SM4 ENCRYPTION AND DECRYPTION
Disclosed embodiments relate to cipher accelerator circuit comprising: a first affine transformation circuit generating a first data block from an input data block, a SM4 S-box circuit configured to perform a first byte S-box operation according to a SM4 cipher and using a SM4 S-box table, the SM4 S-box operation being applied to the first transformed data block to obtain a substituted data block; and a second affine transformation circuit generating a second data block from the substituted data block, wherein the first and second affine transformation circuits are configured to perform multiplication of the substituted data block by a respective matrix and addition of a respective translation vector, and wherein the first and second affine transformations circuits are configured such that the second transformed data block is equal to the input data block processed by a second S-box operation according to another symmetric cipher using S-box tables.
H04L 9/06 - Arrangements for secret or secure communications; Network security protocols the encryption apparatus using shift registers or memories for blockwise coding, e.g. D.E.S. systems
Many error correction schemes fail to correct for double-bit errors and a module must be replaced when these double-bit errors occur repeatedly at the same address. This helps prevent data corruption. In an embodiment, the addresses for one of the memory devices exhibiting a single-bit error (but not the other also exhibiting a single bit error) is transformed before the internal memory arrays are accessed. This has the effect of moving one of the error prone memory cells to a different external (to the module) address such that there is only one error prone bit that is accessed by the previously double-bit error prone address. Thus, a double-bit error at the original address is remapped into two correctable single-bit errors that are at different addresses.
A memory system supports single- and dual-memory-module configurations, both supporting point-to-point communication between a host (e.g., a memory controller) and the memory module or modules. Each memory module includes an address-buffer component, data-buffer components, and two sets of memory dies, each set termed a “timing rank,” that can be accessed independently. The one memory module is configured in a wide mode for the single-memory-module configuration, in which case both timing ranks work together, as a “package rank,” to communicate full-width data. Each of two memory modules are configured in a narrow mode for the dual-memory-module configuration, in which case one timing rank from each memory module communicates data in parallel to appear to the host as single package ranks. The data-buffer components support separate and configurable write and read delays for the different timing ranks on each module to provide read and write leveling within and between memory modules.
A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.
G06F 11/20 - Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
G11C 11/4093 - Input/output [I/O] data interface arrangements, e.g. data buffers
G11C 29/52 - Protection of memory contents; Detection of errors in memory contents
22.
MEMORY DEVICE COMPRISING PROGRAMMABLE COMMAND-AND-ADDRESS AND/OR DATA INTERFACES
A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.
G11C 8/12 - Group selection circuits, e.g. for memory block selection, chip selection, array selection
G11C 5/02 - Disposition of storage elements, e.g. in the form of a matrix array
G11C 5/04 - Supports for storage elements; Mounting or fixing of storage elements on such supports
G11C 5/06 - Arrangements for interconnecting storage elements electrically, e.g. by wiring
G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G11C 8/18 - Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
In response to some access commands, a DRAM device is configured to receive cache tag query values and to compare stored cache tag values with the cache tag query values. A hit/miss (HM) interface/bus may indicate the result of the cache tag compare and stored cache line status bits to a controller. Based on the cache tag compare results and status bits of the associated cache line, the timing and content of the data responses and/or compare responses these access commands may be varied. The controller is configured to, based on the indicated results of the cache tag compare and stored cache line status bits, expect the varied timing and content in response to the access commands transmitted by the controller. In an embodiment, the DRAM protects the stored cache tag values with an error detection and correction code.
A high-capacity cache memory is implemented by multiple heterogenous DRAM dies, including a dedicated tag-storage DRAM die architected for low-latency tag-address retrieval and thus rapid hit/miss determination, and one or more capacity-optimized cache-line DRAM dies that render a net cache-line storage capacity orders of magnitude beyond that of state-of-the art SRAM cache implementations. The tag-storage die serves double-duty in some implementations, yielding rapid tag hit/miss determination for cache-line read/write requests while also serving as a high-capacity snoop-filter in a memory-sharing multiprocessor environment.
G06F 12/123 - Replacement control using replacement algorithms with age lists, e.g. queue, most recently used [MRU] list or least recently used [LRU] list
A stacked memory device includes memory dies over a base die. The base die includes separate memory channels to the different dies and external channels that allow an external processor access to the memory channels. The base die allows the external processor to access multiple memory channels using more than one external channel. The base die also allows the external processor to communicate through the memory device via the external channels, bypassing the memory channels internal to the device. This bypass functionality allows the external processor to connect to additional stacked memory devices.
An interconnected stack of Dynamic Random Access Memory (DRAM) die has a first set of DRAM die (e.g., two, three, four, etc.) coupled to a first independent memory channel, a second set of DRAM die (e.g., two, three, four, etc.) coupled to a second independent memory channel, and a shared die coupled to both independent memory channels. The shared die may be used to store information (e.g., error correcting code) for Reliability, Availability, and Serviceability (RAS) purposes. The shared die may also be used to replace the functionality of a failed or failing die.
G06F 11/10 - Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
G06F 11/14 - Error detection or correction of the data by redundancy in operation, e.g. by using different operation sequences leading to the same result
G06F 11/16 - Error detection or correction of the data by redundancy in hardware
G06F 12/084 - Multiuser, multiprocessor or multiprocessing cache systems with a shared cache
G06F 12/0844 - Multiple simultaneous or quasi-simultaneous cache accessing
G06F 11/07 - Responding to the occurrence of a fault, e.g. fault tolerance
G06F 11/08 - Error detection or correction by redundancy in data representation, e.g. by using checking codes
G06F 12/0804 - Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
G06F 12/0846 - Cache with multiple tag or data arrays being simultaneously accessible
A high-capacity cache memory is implemented by one or more DRAM dies in which individual cache entries are split across multiple DRAM storage banks such that each cache-line read or write is effected by a time- staggered set of read or write operations within respective storage banks spanned by the target cache entry.
A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.
G11C 29/44 - Indication or identification of errors, e.g. for repair
G11C 5/04 - Supports for storage elements; Mounting or fixing of storage elements on such supports
G11C 11/401 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
G11C 29/00 - Checking stores for correct operation; Testing stores during standby or offline operation
G11C 29/02 - Detection or location of defective auxiliary circuits, e.g. defective refresh counters
G11C 29/52 - Protection of memory contents; Detection of errors in memory contents
A memory device may be accessed via multiple channels (e.g., 2 channels, 4 channels, etc.). The data widths (i.e., number of data signals) allocated to each channel are configurable such that a given group of data input/output (I/O) signals may be part of a first channel in one configuration, but be part of another channel in a different configuration. Similarly, the memory arrays (e.g., banks, or bank groups) accessed by a given channel may be configurable such that a given memory array is accessed via a first channel in one configuration but is accessed via a different channel in a different configuration. Finally, the data burst length, data burst size, and data transfer clock cycle are configurable.
A pulse filter circuit is configured to eliminate pulses that are less than a specified duration and pass those that are greater than the specified duration. A buffer receives a signal and applies the buffered signal to a resistance-capacitance charging-discharging circuit (e.g., RC filter). When the output of the RC filter has, in response to the buffered signal, charged or discharged, as appropriate, to cause the output of a slicer to change, logic circuitry controls switching circuitry to pull the output of the RC filter to be fully charged or discharged, respectively. In this manner, pulses that are too short to charge/discharge the RC filter enough to cross the threshold of the slicer do not reach the slicer circuit output, but pulses that are long enough to cross the slicer threshold are transmitted by the slicer.
An integrated-circuit memory component receives, as part of respective first and second memory read transactions, a first column access command that identifies a first volume of data and a second column read command that identifies a second volume of data, the second volume of data being constituted by not more than half as many data bits as the first volume of data. In response to receiving the first column access command, the integrated-circuit memory component transmits the first volume of data as N parallel bit-serial data signals over N external signaling links. In response to receiving the second column access command, the integrated-circuit memory component transmits the second volume of data as M parallel bit-serial data signals over M of the N external signaling links, where M is less than N.
A memory device enables write operations with an extended write data window. In a first type of write operation, the memory device receives a merged row/column command at an input interface. The memory device initiates a row operation (e.g., a row activation) of a memory array and subsequently internally initiates a column operation (e.g., a write command) with timing controlled by internal logic. The write data may be received before, during, or after the write command. In another type of write operation, the memory device receives a write- activate command for initiating a row operation of the memory array that includes one or more control bits indicating that a write command will follow. The memory device subsequently receives the write command at the input interface and initiates the write operation. The write data may be received during an extended write data window before or after the write command.
A dynamic random access memory (DRAM) comprises a plurality of primary data storage elements, a plurality of redundant data storage elements, and circuitry to receive a first register setting command and initiate a repair mode in the DRAM in response to the first register setting command. The circuitry is further to receive an activation command, repair a malfunctioning row address in the DRAM, receive a precharge command, receive a second register setting command, terminate the repair mode in the DRAM in response to the second register setting command, receive a memory access request for data stored at the malfunctioning row address, and redirect the memory access request to a corresponding row address in the plurality of redundant data storage elements.
G11C 29/00 - Checking stores for correct operation; Testing stores during standby or offline operation
G11C 11/401 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
G11C 29/02 - Detection or location of defective auxiliary circuits, e.g. defective refresh counters
G11C 29/04 - Detection or location of defective memory elements
G11C 29/12 - Built-in arrangements for testing, e.g. built-in self testing [BIST]
G11C 29/44 - Indication or identification of errors, e.g. for repair
G11C 29/48 - Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
34.
Memory Controller With Error Detection And Retry Modes Of Operation
A memory system includes a link having at least one signal line and a controller. The controller includes at least one transmitter coupled to the link to transmit first data, and a first error protection generator coupled to the transmitter. The first error protection generator dynamically adds an error detection code to at least a portion of the first data. At least one receiver is coupled to the link to receive second data. A first error detection logic determines if the second data received by the controller contains at least one error and, if an error is detected, asserts a first error condition. The system includes a memory device having at least one memory device transmitter coupled to the link to transmit the second data. A second error protection generator coupled to the memory device transmitter dynamically adds an error detection code to at least a portion of the second data.
G06F 11/10 - Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
G06F 11/14 - Error detection or correction of the data by redundancy in operation, e.g. by using different operation sequences leading to the same result
G06F 11/20 - Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
G11C 29/52 - Protection of memory contents; Detection of errors in memory contents
H03M 13/03 - Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
H04L 1/00 - Arrangements for detecting or preventing errors in the information received
H04L 1/08 - Arrangements for detecting or preventing errors in the information received by repeating transmission, e.g. Verdan system
One or more neural network layers are implemented by respective sets of signed multiply-accumulate units that generate dual analog result signals indicative of positive and negative product accumulations, respectively. The two analog result signals and thus the positive and negative product accumulations are differentially combined to produce a merged analog output signal that constitutes the output of a neural node within the subject neural network layer.
Memory devices, modules, controllers, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory chip is disclosed. The IC memory chip includes clock receive circuitry to receive a clock signal and command/address (C/A) receive circuitry to time reception of C/A signals using the clock signal. Data receive circuitry receives a first data burst from a first data path. Calibration circuitry sets an initial sampling phase for data reception timing of the first data burst relative to the clock signal. Timing circuitry tracks drift in the data reception timing using phase information from at least one toggling edge of the data burst and adjusts the data reception timing based on the phase information.
An integrated circuit receiver is disclosed comprising a data receiving circuit responsive to a timing signal to detect a data signal and an edge receiving circuit responsive to the timing signal to detect a transition of the data signal. One of the data or edge receiving circuits comprises an integrating receiver circuit while the other of the data or edge sampling circuits comprises a sampling receiver circuit.
H04L 7/033 - Speed or phase control by the received code signals, the signals containing no special synchronisation information using the transitions of the received signal to control the phase of the synchronising-signal- generating means, e.g. using a phase-locked loop
H04L 7/00 - Arrangements for synchronising receiver with transmitter
Row activation operations within a memory component are carried out with respect to subrows instead of complete storage rows to reduce power consumption. Further, instead of activating subrows in response to row commands, subrow activation operations are deferred until receipt of column commands that specify the column operation to be performed and the subrow to be activated.
G11C 7/12 - Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
G11C 7/22 - Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
G11C 8/08 - Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
A binary receiver combines a fast amplifier with a relatively slow amplifier for noise rejection. Both the fast and slow amplifiers employ hysteresis. The fast amplifier has relatively lower hysteresis, meaning that its sensitivity is a less effected by prior data values but more susceptible to glitch-induced errors. Conversely, the slow amplifier has relatively higher hysteresis and rejects glitches but introduces undesirable signal-propagation delays. A state machine taking input from both amplifiers allows the receiver to filter glitches without incurring a significant data-propagation delay.
A method of transferring data between a memory controller and at least one memory module via a primary data bus having a primary data bus width is disclosed. The method includes accessing a first one of a memory device group via a corresponding data bus path in response to a threaded memory request from the memory controller. The accessing results in data groups collectively forming a first data thread transferred across a corresponding secondary data bus path. Transfer of the first data thread across the primary data bus width is carried out over a first time interval, while using less than the primary data transfer continuous throughput during that first time interval. During the first time interval, at least one data group from a second data thread is transferred on the primary data bus.
Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory controller is disclosed. The memory controller includes write queue logic that has first storage to temporarily store signal components of a write operation. The signal components include an address and write data. A transfer interface issues the signal components of the write operation to a bank of a storage class memory (SCM) device and generates a time value. The time value represents a minimum time interval after which a subsequent write operation can be issued to the bank. The write queue logic includes an issue queue to store the address and the time value for a duration corresponding to the time value.
Technologies for signal skew correction in integrated circuit memory devices are described. An integrated circuit memory device includes a first interface to receive command/address (CA) signals and a clock signal, a data interface, and a mode register. During a CA bus loopback mode, the first interface receives a pattern of CA signals and the clock signal and the data interface outputs the pattern of CA signals. During the CA bus loopback mode, the mode register can be programmed with a value representative of a timing offset between the clock signal and a sampling point for the first interface.
A memory system includes a host controller that issues access commands, including write pattern commands, to a dynamic, random-access memory (DRAM). Local control circuitry and a row-preset circuitry service write-pattern commands to minimize conflict with access transactions, e. In the memory device, local control circuitry and a row-preset circuit service the write-pattern commands in a manner that minimizes interference with normal read and write transactions. Presetting memory to e.g., erase potentially vulnerable data after use is therefore accomplished efficiently and with no or minimal impact on memory bandwidth and speed performance.
G11C 7/12 - Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
G11C 5/02 - Disposition of storage elements, e.g. in the form of a matrix array
44.
Clocking architecture supporting multiple data rates and reference edge selection
A clocking architecture for a memory module is configurable to independently select either rising or falling edges of an input clock as respective references for generation of an internal clock and an output clock. The clocking architecture supports reference edge selection in both a single data rate (SDR) mode and a double data rate (DDR) mode while maintaining a fixed phase relationship between the input clock and the output clock regardless of the reference edge selection.
A bundled-data protocol can be used to synchronize the data flow in the mask shares. A random synchronization token is input and “bundled” with the combinatorial logic of a share. An additional output from the combinatorial logic is also provided such that when the original combinational output is exclusive OR'd (XOR'd) with the additional output yields the random synchronization token. When the XOR of the original and additional outputs, and the input synchronization token are equal, it indicates that the computation of the combinatorial logic is complete. Thus, the result of the comparison of the XOR of the original and additional outputs, and the input synchronization token may be used as a “done” or “enable” handshake signal to allow asynchronous gating elements (e.g., AND gates, asynchronous set-reset latches, and/or state-holding elements like the Muller C-element, etc.) to start and stop the flow of data in a mask share.
G06F 21/75 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information by inhibiting the analysis of circuitry or operation, e.g. to counteract reverse engineering
46.
TRAINING AND OPERATIONS WITH A DOUBLE BUFFERED MEMORY TOPOLOGY
System and method for training and performing operations (e.g., read and write operations) on a double buffered memory topology. In some embodiments, eight DIMMs are coupled to a single channel. The training and operations schemes are configured with timing and signaling to allow training and operations with the double buffered memory topology. In some embodiments, the double buffered memory topology includes one or more buffers on a system board (e.g., motherboard).
A buffer/interface device of a memory node may read and compress fixed size blocks of data (e.g., pages). The size of each of the resulting compressed blocks of data is dependent on the data patterns in the original blocks of data. Fixed sized blocks of data are divided into fixed size sub-blocks (a.k.a., slots) for storing the resulting compressed blocks of data at with sub-block granularity. Pointers to the start of compressed pages are maintained at the final level of the memory node page tables in order to allow access to compressed pages. Upon receiving an access to a location within a compressed page, only the slots containing the compressed page need to be read and decompressed. The memory node page table entries may also include a content indicator (e.g., flag) that indicates whether any page within the block of memory associated with that page table entry is compressed.
A memory component internally generates and stores the check bits of error detect and correct code (EDC). In a first mode, during a read transaction, the check bits are sent to the memory controller along with the data on the data mask (DM) signal lines. In a second mode, an unmasked write transaction is defined where the check bits are sent to the memory component on the data mask signal lines. In a third mode, a masked write transaction is defined where at least a portion of the check bits are sent from the memory controller on the data signal lines coincident with an asserted data mask signal line. By sending the check bits along with the data, the EDC code can be used to detect and correct errors that occur between the memory component and the memory controller.
Local on-die termination controllers for effecting termination of a high-speed signaling links simultaneously engage on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link. A termination control bus is coupled to memory devices on a module, and provides for peer-to-peer communication of termination control signals.
Multiple device stacks are interconnected in a ring topology. The inter-device stack communication may utilize a handshake protocol. This ring topology may include the host so that the host may initialize and load the device stacks with data and/or commands (e.g., software, algorithms, etc.). The inter-device stack interconnections may also be configured to include/remove the host and/or to implement varying numbers of separate ring topologies. By configuring the system with more than one ring topology, and assigning different problems to different rings, multiple, possibly unrelated, machine learning tasks may be performed in parallel by the device stack system.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Same sized blocks of data corresponding to a single read/write command are stored in the same memory array of a memory device, but using different formats. A first one of these formats spreads the data in the block across a larger number of memory subarrays (a.k.a., memory array tiles—MATs) than a second format. In this manner, the data blocks stored in the first format can be accessed with lower latency than the blocks stored in the second format because more data can be read from the array simultaneously. In addition, since the data stored in the second format is stored in fewer subarrays, it takes less energy to read a block stored in the second format. Thus, a system may elect, on a data block by data block basis, whether to conserve power or improve speed.
Disclosed herein are systems having an integrated circuit device disposed within an integrated circuit package having a periphery, and within this periphery a transaction processor is configured to receive a combination of signals (e.g., using a standard memory interface), and intercept some of the signals to initiate a data transformation, and forward the other signals to one or more memory controllers within the periphery to execute standard memory access operations (e.g., with a set of DRAM devices). The DRAM devices may or may not be in within the package periphery. In some embodiments, the transaction processor can include a data plane and control plane to decode and route the combination of signals. In other embodiments, off-load engines and processor cores within the periphery can support execution and acceleration of the data transformations.
A DRAM includes at least four groups of memory cores and at least four memory access channel interfaces that, in a first mode, each respectively are to receive memory access commands, directed to a corresponding one of the groups of memory cores. One-half of the memory access channel interfaces are to, in a second mode, each respectively receive memory access commands, directed to a corresponding two of four of the groups of memory cores. The memory access channel interfaces to have electrical connection conductors that lie on opposing sides of at least one line of reflectional symmetry from a second one-half of the one-half of the at least four memory access channel interfaces.
In a memory component having a command/address interface, timing interface and data interface, the command/address interface receives a first command/address value from a control component during a first interval and a second command/address value from the control component during a second interval. The timing interface receives a data strobe from the control component during the first interval and a data clock from the control component during the second interval, the data strobe departing from a parked voltage level to commence toggling at a time corresponding to reception of the first command/address value, and the data clock toggling throughout the second interval regardless of second command/address value reception-time. The data interface samples first write data corresponding to the first command/address value at times indicated by toggling of the data strobe, and samples second write data corresponding to the second command/address value at times indicated by toggling of the data clock.
Described are motherboards with memory-module sockets that accept legacy memory modules for backward compatibility or accept a greater number of configurable modules in support of increased memory capacity. The configurable modules can be backward compatible with legacy motherboards. Equipped with the configurable modules, the motherboards support memory systems with high signaling rates and capacities.
A method of operating a memory controller is disclosed. The method includes transmitting data signals to a memory device over each one of at least two parallel data links. A timing signal is sent to the memory device on a first dedicated link. The timing signal has a fixed phase relationship with the data signals. A data strobe signal is driven to the memory device on a second dedicated link. Phase information is received from the memory device. The phase information being generated internal to the memory device and based on a comparison between the timing signal and a version of the data strobe signal internally distributed within the memory device. A phase of the data strobe signal is adjusted relative to the timing signal based on the received phase information.
A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.
A multi-host processing system may access memory devices (e.g., memory modules, memory integrated circuits, etc.) via memory nodes having memory controllers. The memory controllers may be configured to use more than one error control scheme when accessing the same memory devices. The selection of the error control scheme may be made based on the interface receiving the memory transaction request. The selection of the error control scheme may be made based on information in the memory transaction request. The selection of the error control scheme may be made based on the fabric physical address and a lookup table or address range registers. The selection of the error control scheme may be made based on the memory device physical address and a lookup table or address range registers.
When writing a block (e.g., cache line) of data to a memory, error detection and correction (EDC) information (check) symbols are calculated. The block of data, a first portion of the check symbols, and metadata are all written concurrently at a first address. The remaining portion of the check symbols are written at a second, different from the first, address. When reading the block of data, a first read command accesses the block of data, the first portion of the check symbols, and the metadata from the first address. Only the first portion of the check symbols is used to determine a first number of errors (if any) in the accessed data. If the first number of errors meets a threshold number of errors, a second read command is issued to access the second portion of the check symbols.
A buffer integrated circuit (IC) chip is disclosed. The buffer IC chip includes host interface circuitry to receive a request from at least one host. The request includes at least one command to perform a memory compression operation on first uncompressed data that is stored in a first memory region. Compression circuitry, in response to the at least one command, compresses the first uncompressed data to first compressed data. The first compressed data is transferred to a second memory region.
An apparatus and method for flexible metadata allocation and caching. In one embodiment of the method first and second requests are received from first and second applications, respectively, wherein the requests specify a reading of first and second data, respectively, from one or more memory devices. The circuit reads the first and second data in response to receiving the first and second requests. Receiving first and second metadata from the one or more memory devices in response to receiving the first and second requests. The first and second metadata correspond to the first and second data, respectively. The first and second data are equal in size, and the first and second metadata are unequal in size.
In a general aspect, a network interface capable of processing network traffic conforming to a Time Sensitive Network (TSN) standard and a Media Access Control layer security (MACsec) standard, comprises, within an ingress path, a Physical Coding Sublayer (PCS) connected to receive a traffic stream from a network link; a Media Access Control (MAC) unit configured to split the traffic stream into a preemptable packet stream and an express packet stream; and a MACsec unit connected between the PCS and the MAC unit, configured to operate on individual fragments of a preempted MACsec protected packet in the traffic stream to produce a traffic stream with unprotected fragments for the MAC unit.
Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory component is disclosed that includes a memory core, a primary interface, and a secondary interface. The primary interface includes data input/output (I/O) circuitry and control/address (C/A) input circuitry, and accesses the memory core during a normal mode of operation. The secondary interface accesses the memory core during a fault mode of operation.
G06F 11/20 - Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
G06F 11/16 - Error detection or correction of the data by redundancy in hardware
G06F 11/10 - Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
64.
Memory component for deployment in a dynamic stripe width memory system
A device includes a cache memory and a memory controller coupled to the cache memory. The memory controller is configured to receive a first read request from a cache controller over an interconnect, the first read request comprising first tag data identifying a first cache line in the cache memory, and determine that the first read request comprises a tag read request. The memory controller is further configured to read second tag data corresponding to the tag read request from the cache memory, compare the second tag data read from the cache memory to the first tag data received from the cache controller with the first read request, and if the second tag data matches the first tag data, initiate an action with respect to the first cache line in the cache memory.
G06F 12/0895 - Caches characterised by their organisation or structure of parts of caches, e.g. directory or tag array
G06F 12/0804 - Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
G06F 9/38 - Concurrent instruction execution, e.g. pipeline, look ahead
G06F 12/0864 - Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches using pseudo-associative means, e.g. set-associative or hashing
Disclosed is an integrated circuit die of a memory buffer integrated circuit that is placed aggregately closer to the solder balls that connect to the input (i.e., host command/address—C/A) signals than the output solder balls (i.e., memory device C/A) signals. This decreases the length of the host C/A signals from the memory controller to the memory buffer device when the memory module is placed in a system.
A method of operation of a flash integrated circuit (IC) memory device is described. The flash IC memory device has an array of memory cells and an interface to receive control, address and data signals using an internal reference voltage. The method includes, at boot-up, initializing the internal reference voltage to a default voltage. At boot-up, the interface is operable to receive, using the internal reference voltage, signals having a first voltage swing at a first signaling frequency. The method includes receiving a first command that specifies calibration of the interface during a calibration mode. The calibration mode is used to calibrate the interface to operate at a second signaling frequency and receive signals having a second voltage swing. The second voltage swing is smaller than the first voltage swing and the second signaling frequency is higher than the first signaling frequency.
A memory system includes a memory controller with a plurality N of memory-controller blocks, each of which conveys independent transaction requests over external request ports. The request ports are coupled, via point-to-point connections, to from one to N memory devices, each of which includes N independently addressable memory blocks. All of the external request ports are connected to respective external request ports on the memory device or devices used in a given configuration. The number of request ports per memory device and the data width of each memory device changes with the number of memory devices such that the ratio of the request-access granularity to the data granularity remains constant irrespective of the number of memory devices.
A transmitter employs simple inverters to predrive cascode-connected pull-up and pull-down output stages. Each output stage includes a drive transistor with a thin gate dielectric for fast switching. The drive transistor is cascode connected to a set of parallel-connected transistors. Calibration circuitry selectively enables the parallel-connected transistors to calibrate output resistance. The parallel transistors converge at a single resistor.
A flash memory cell of a flash memory device is illuminated with light during programming and/or erasing. The wavelength of the light is selected such that the photons impinging on the flash memory cell have an energy that approaches the barrier height (conduction band offset) of the tunnel insulator. Illuminating the flash memory cell during programming/erase increases the tunneling current through the tunnel insulator by way of the photon assisted tunneling (PAT) effect.
G11C 11/42 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
The described embodiments provide a system for controlling an integrated circuit memory device by a memory controller. During operation, the system sends a memory-access request from the memory controller to the memory device using a first link. After sending the memory-access request, the memory controller sends to the memory device a command that specifies performing a timing-calibration operation for a second link. The system subsequently transfers data associated with the memory-access request using the second link, wherein the timing-calibration operation occurs between sending the memory-access request and transferring the data associated with the memory-access request.
A single-ended data transmission system transmits a signal having a signal voltage that is referenced to a power supply voltage and that swings above and below the power supply voltage. The power supply voltage is coupled to a power supply rail that also serves as a signal return path. The signal voltage is derived from two signal supply voltages generated by a pair of charge pumps that draw substantially same amount of current from a power supply.
Disclosed herein are techniques for implementing high-throughput low-latency hybrid memory modules with improved data backup and restore throughput, enhanced non-volatile memory controller (NVC) resource access, and enhanced mode register setting programmability. Embodiments comprise a command replicator to generate sequences of one or more DRAM read and/or write and/or other commands to be executed in response to certain local commands from a non-volatile memory controller (NVC) during data backup and data restore operations. Other embodiments comprise an access engine to enable an NVC in a host control mode to trigger entry into a special mode and issue commands to access a protected register space. Some embodiments comprise a mode register controller to capture and store the data comprising mode register setting commands issued during a host control mode, such that an NVC can program the DRAM mode registers in an NVC control mode.
G06F 3/06 - Digital input from, or digital output to, record carriers
G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
G06F 12/14 - Protection against unauthorised use of memory
A controller iteratively activates a control signal for one-half a clock cycle while sweeping its phase relationship to the rising edge of the clock. Phase relationships that result in the rising edge of the clock occurring while the control signal is active result in the memory device outputting command/address data on the data bus. Phase relationships that do not result in the rising edge of the clock occurring while the control signal is active do not result in the memory device outputting the command/address data on the data bus. By changing the data on the CA bus between activations of the control signal, the controller can ascertain what phase relationships result in the control signal being successfully sampled. From this information, the controller can select a reliable setting for the phase relationship between the control signal and the clock signal.
G11C 7/22 - Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
G11C 8/18 - Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
G11C 11/4063 - Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
G11C 11/413 - Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G11C 11/4193 - Auxiliary circuits specific to particular types of semiconductor storage devices, e.g. for addressing, driving, sensing, timing, power supply, signal propagation
Aspects and implementations include systems and techniques for efficient detection and correction of errors in stored and communicated data, including obtaining a codeword generated by a computer operation applied to an original codeword that encodes a plurality of symbols, computing, a plurality of syndrome values characterizing a difference between the codeword and the original codeword, identifying a reduced set of error locator polynomials (ELPs), each ELP associated with (i) at least one potential error within a respective group of symbols and (ii) absence of potential errors outside the respective group of symbols, selecting an indicator ELP associated with a corrupted group of symbols having at least one error, and identifying, using the indicator ELP, the corrupted group of symbols.
H03M 13/15 - Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes
G06F 3/06 - Digital input from, or digital output to, record carriers
G06F 11/08 - Error detection or correction by redundancy in data representation, e.g. by using checking codes
G06F 11/10 - Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
H03M 13/41 - Sequence estimation, i.e using statistical methods for the reconstruction of the original codes using the Viterbi algorithm or Viterbi processors
H03M 13/45 - Soft decoding, i.e. using symbol reliability information
76.
DRIFT DETECTION IN TIMING SIGNAL FORWARDED FROM MEMORY CONTROLLER TO MEMORY DEVICE
A memory system in which a timing drift that would occur in distribution of a first timing signal for data transport in a memory device is determined by measuring the actual phase delays occurring in a second timing signal that has a frequency lower than that of the first timing signal and is distributed in one or more circuits mimicking the drift characteristics of at least a portion of distribution of the first timing signal. The actual phase delays are determined in the memory device and provided to a memory controller so that the phases of the timing signals used for data transport may be adjusted based on the determined timing drift.
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H03L 7/099 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H04L 7/00 - Arrangements for synchronising receiver with transmitter
H03L 7/081 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop provided with an additional controlled phase shifter
H03L 7/07 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop using several loops, e.g. for redundant clock signal generation
H04L 7/10 - Arrangements for initial synchronisation
G06F 13/16 - Handling requests for interconnection or transfer for access to memory bus
A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.
G06F 3/06 - Digital input from, or digital output to, record carriers
G06F 5/06 - Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising
G06F 1/08 - Clock generators with changeable or programmable clock frequency
G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G11C 29/02 - Detection or location of defective auxiliary circuits, e.g. defective refresh counters
G06F 13/16 - Handling requests for interconnection or transfer for access to memory bus
G06F 12/06 - Addressing a physical block of locations, e.g. base addressing, module addressing, address space extension, memory dedication
Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.
G11C 11/4091 - Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
G11C 11/4094 - Bit-line management or control circuits
G11C 11/4096 - Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/10 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers
79.
DYNAMIC, RANDOM-ACCESS MEMORY WITH INTERLEAVED REFRESH
A memory includes a local control circuitry that manages refresh transactions using a set of sense amplifiers separate from those used for access (read and write) transactions. The local control circuitry interrupts refresh transactions to prioritize access requests, thereby offering improved memory performance. The local control circuitry also divides refresh transactions into phases and periods based on whether the refresh transaction requires access to bitlines used for read and write access. This division allows the local control circuitry to interleave and interrupt refresh transactions with access transactions in a manner that minimizes access interference.
G11C 11/401 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
G11C 11/402 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
G11C 11/403 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
G11C 11/406 - Management or control of the refreshing or charge-regeneration cycles
G11C 11/4091 - Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
G11C 11/40 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
G11C 11/404 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
G11C 11/4067 - Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the bipolar type
G11C 11/407 - Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
Technologies for detecting an error using a message authentication code (MAC) associated with cache line data and differentiating the error as having been caused by an attack on memory or a MAC verification failure caused by an ECC escape. One memory buffer device includes an in-line memory encryption (IME) circuit to generate the MACs and verify the MACs. Upon a MAC verification failure, the memory buffer device can analyze at least one of the historical MAC verification failures or historical ECC-corrected errors over time to determine if the error is caused by an attack on memory.
A shared data strobe signal is applied to time data reception simultaneously in two or more transactionally-independent memory channels, lowering strobe signaling overhead by at least half relative to conventional strobe-per-channel solutions.
G06F 13/28 - Handling requests for interconnection or transfer for access to input/output bus using burst mode transfer, e.g. direct memory access, cycle steal
G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G11C 7/22 - Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
82.
MEMORY BANDWIDTH AGGREGATION USING SIMULTANEOUS ACCESS OF STACKED SEMICONDUCTOR MEMORY DIE
A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.
A 3D DRAM architecture may have one or more layers of cells where the access transistors of the memory cell array are fabricated among the metal layers rather than in the semiconductor (e.g., silicon) substrate. Counter and counter control circuits for each row in the memory cell array are fabricated under the array. These counters track the number of row hammers each row experiences. When a counter indicates a row has experienced a threshold number of row hammers, that row is refreshed. The row may be refreshed immediately after the current row is closed. The row may be scheduled to be refreshed as part of a regular refresh sequence. A signal may be sent to the memory controlling indicating that the bank with the row being refreshed immediately should not be accessed until the refresh is complete.
A memory controller includes logic circuitry to generate a first data address identifying a location in a first external memory array for storing first data, a first tag address identifying a location in a second external memory array for storing a first tag, a second data address identifying a location in the second external memory array for storing second data, and a second tag address identifying a location in the first external memory array for storing a second tag. The memory controller includes an interface that transfers the first data address and the first tag address for a first set of memory operations in the first and the second external memory arrays. The interface transfers the second data address and the second tag address for a second set of memory operations in the first and the second external memory arrays.
A 3D memory device includes a plurality of mats that each include a memory array stacked over logic circuitry supporting operations of the memory array. The logic circuitry include a local column decoder under the memory array for selecting one or more local column select lines associated with a memory operation. The logic circuitry furthermore includes one or more selectable global array data bus redrivers for receiving global data signals from a set of global data signal buses, selecting one of the global data signal buses, and amplifying signals between the selected global data signal bus and a local data signal bus that communicates the data signals to and from the memory array. The 3D memory device supports concurrent sub-page accesses which may be interleaved for efficient memory operations.
G11C 7/12 - Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
G11C 7/18 - Bit line organisation; Bit line lay-out
G11C 11/063 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using multi-aperture plates in which each individual aperture forms a storage element using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out bit-organized, such as, 2L/2D-, 3D-organization, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing
G11C 11/065 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using multi-aperture plates in which each individual aperture forms a storage element using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out word-organized, such as 2D-organization, or linear selection, i.e. for selection of all the elements of a word by means of a single full current for reading
G11C 11/24 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
G11C 8/14 - Word line organisation; Word line lay-out
G11C 11/21 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
G11C 11/402 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
G11C 11/4094 - Bit-line management or control circuits
G11C 11/4097 - Bit-line organisation, e.g. bit-line layout, folded bit lines
86.
MEMORY MANAGEMENT WITH IMPLICIT IDENTIFICATION OF CRYPTOGRAPHIC KEYS USING ERROR CORRECTION DATA
Disclosed systems and techniques involve storage of encrypted data in memory pages that may include units stored with different cryptographic keys. Data may be stored with error correction data that implicitly encodes an identification of a key (key selector) without additional memory being allocated to explicit storage of the key selector. During data retrieval, the key selector is recovered from error correction data by processing multiple instances of extended data in which the data is combined with various possible key selectors.
G06F 12/14 - Protection against unauthorised use of memory
G06F 21/53 - Monitoring users, programs or devices to maintain the integrity of platforms, e.g. of processors, firmware or operating systems during program execution, e.g. stack integrity, buffer overflow or preventing unwanted data erasure by executing in a restricted environment, e.g. sandbox or secure virtual machine
G06F 21/72 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information in cryptographic circuits
H03M 13/15 - Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes
An integrated circuit device includes a first memory to support address translation between local addresses and fabric addresses and a processing circuit, operatively coupled to the first memory. The processing circuit allocates, on a dynamic basis as a donor, a portion of first local memory of a local server as first far memory for access for a first remote server, or as a requester receives allocation of second far memory from the first remote server or a second remote server for access by the local server. The processing circuit bridges the access by the first remote server to the allocated portion of first local memory as the first far memory, through the fabric addresses and the address translation supported by the first memory, or bridge the access by the local server to the second far memory, through the address translation supported by the first memory, and the fabric addresses.
A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.
Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.
A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device.
A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.
G11C 11/4093 - Input/output [I/O] data interface arrangements, e.g. data buffers
G11C 11/4096 - Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
G11C 5/02 - Disposition of storage elements, e.g. in the form of a matrix array
G11C 5/04 - Supports for storage elements; Mounting or fixing of storage elements on such supports
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/10 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
G11C 11/406 - Management or control of the refreshing or charge-regeneration cycles
92.
FAULT TOLERANT MEMORY SYSTEMS AND COMPONENTS WITH INTERCONNECTED AND REDUNDANT DATA INTERFACES
A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. The memory components can be configured to route data around defective data connections to maintain full capacity and continue to support memory transactions.
G06F 11/14 - Error detection or correction of the data by redundancy in operation, e.g. by using different operation sequences leading to the same result
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
G06F 3/06 - Digital input from, or digital output to, record carriers
G06F 13/16 - Handling requests for interconnection or transfer for access to memory bus
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/10 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers
93.
Memory Systems and Methods for Improved Power Management
A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. Each memory device supports an access mode and a low-power mode, the latter used to save power for devices that are not immediately needed. The module provides granular power management using a chip-select decoder that decodes chip-select signals from the memory controller into power-state signals that determine which of the memory devices are in which of the modes. Devices can thus be brought out of the low-power mode in relatively small numbers, as needed, to limit power consumption.
A buffer/interface device of a memory node reads a block of data (e.g., page). As each unit of data (e.g., cache line sized) of the block is read, it is compared against one or more predefined patterns (e.g., all 0's, all 1's, etc.). If the block (page) is only storing one of the predefined patterns, a flag in the page table entry for the block is set to indicate the block is only storing one of the predefined patterns. The physical memory the block was occupying may then be deallocated so other data may be stored using those physical memory addresses.
G06F 12/0891 - Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches using clearing, invalidating or resetting means
A hybrid volatile/non-volatile memory module employs a relatively fast, durable, and expensive dynamic, random-access memory (DRAM) cache to store a subset of data from a larger amount of relatively slow and inexpensive nonvolatile memory (NVM). A module controller prioritizes accesses to the DRAM cache for improved speed performance and to minimize programming cycles to the NVM. Data is first written to the DRAM cache where it can be accessed (written to and read from) without the aid of the NVM. Data is only written to the NVM when that data is evicted from the DRAM cache to make room for additional data. Mapping tables relating NVM addresses to physical addresses are distributed throughout the DRAM cache using cache line bits that are not used for data.
G06F 12/0804 - Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
An signal switching integrated-circuit die includes an array of switch cells, control signal contacts, data input contacts and data output contacts. Switch control signals are received from an external control-signal source via respective control signal contacts, inbound data signals are received from one or more external data-signal sources via respective data input contacts and outbound data signals are conveyed to one or more external data-signal destinations via respective data output contacts. The array of switch cells receives the control signals directly from the control signal contacts and response to the control signals by switchably interconnecting the data input contacts with selected ones of the data output contacts.
H03K 17/92 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of superconductive devices
H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
G06F 1/26 - Power supply means, e.g. regulation thereof
H03K 19/195 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using superconductive devices
F25D 29/00 - Arrangement or mounting of control or safety devices
97.
PAM-4 DFE ARCHITECTURES WITH SYMBOL-TRANSITION DEPENDENT DFE TAP VALUES
Decision feedback equalization (DFE) is used to help reduce inter-symbol interference (ISI) from a data signal received via a band-limited (or otherwise non-ideal) channel. A first PAM-4 DFE architecture has low latency from the output of the samplers to the application of the first DFE tap feedback to the input signal. This is accomplished by not decoding the sampler outputs in order to generate the feedback signal for the first DFE tap. Rather, weighted versions of the raw sampler outputs are applied directly to the input signal without further analog or digital processing. Additional PAM-4 DFE architectures use the current symbol in addition to previous symbol(s) to determine the DFE feedback signal. Another architecture transmits PAM-4 signaling using non-uniform pre-emphasis. The non-uniform pre-emphasis allows a speculative DFE receiver to resolve the transmitted PAM-4 signals with fewer comparators/samplers.
The timing of the synchronous interface is controlled by a clock signal driven by a controller. The clock is toggled in order to send a command to a memory device via the interface. If there are no additional commands to be sent via the interface, the controller suspends the clock signal. When the memory device is ready, the memory device drives a signal back to the controller. The timing of this signal is not dependent upon the clock signal. Receipt of this signal by the controller indicates that the memory device is ready and the clock signal should be resumed so that a status of the command can be returned via the interface, or another command issued via the interface.
Technologies for securing dynamic random access memory contents to nonvolatile memory in a persistent memory module are described. One persistent memory module includes an inline memory encryption (IME) circuit that receives a data stream from a host, encrypts the data stream into encrypted data, and stores the encrypted data in DRAM. A management processor transfers the encrypted data from the DRAM to persistent storage memory responsive to a signal associated with a power-loss or power-down event.
An application-specific integrated circuit for an artificial neural network is integrated with a high-bandwidth memory. A processing die with tiled neural-network processing units is bonded to a stack of memory dies with memory banks laid out to establish relatively short connections to overlying processing units. The memory banks form vertical groups of banks for each overlying processing unit. A switch matrix on the processing die allows each processing unit to communicate with its vertical group of banks via a short, fast inter-die memory channel or with more remote groups of banks under neighboring processing units.
