Abstract

An optoelectronic device including a light-emitting diode covered with a photoluminescent conversion layer based on a perovskite material.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

IPC Classes  ?

• H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A device for acquiring a 2D image and a depth image, including: a first sensor formed in and on a first semiconductor substrate and including regions of a material distinct from that of the substrate located in an interconnect stack in line with 2D image pixels of the first r sensor; and adjoining the first sensor, a second sensor formed in and on a second semiconductor substrate and including a plurality of depth pixels located opposite the regions of the first sensor, wherein each region includes a first portion having, in top view, a smaller surface area than that of a second portion, the material of the regions having an optical index greater than or equal to that of the material of the substrate.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A SiP-type electronic device, including an electronic chip provided with an electrical interconnection face; a redistribution layer electrically coupled to the electrical interconnection face of the chip; electrical connection elements electrically coupled to the chip by the redistribution layer which is arranged between the chip and the connection elements; a first metal layer arranged on the side of a second face of the chip and secured to this second face; an encapsulation material arranged around the chip, between the redistribution layer and the first metal layer; a second metal layer including a first face secured by direct bonding to the first metal layer; a substrate arranged against a second face of the second metal layer.

IPC Classes  ?

• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/367 - Cooling facilitated by shape of device
• H01L 23/427 - Cooling by change of state, e.g. use of heat pipes
• H01L 23/552 - Protection against radiation, e.g. light

Abstract

The present description concerns a random number generation circuit (2) of correlated sampling ring oscillator type comprising: two identical ring oscillators (RO1, R02) implemented in CMOS-on-FDSOI technology; a circuit (104) sampling and storing an output (O1) of one of the two oscillators (RO1) at a frequency of the other one of the two oscillators (R02) and delivering a corresponding binary signal (Beat); and a circuit (200) controlling back gates of PMOS and NMOS transistors of at least one delay element of at least one of the two oscillators (RO1, R02) based on a period difference between the two oscillators (RO1, R02).

IPC Classes  ?

• H03K 3/84 - Generating pulses having a predetermined statistical distribution of a parameter, e.g. random pulse generators
• H03K 5/134 - Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active-delay devices with field-effect transistors

Abstract

A system for positioning and maintaining a position of a reference sensor around a magnetoencephalography helmet. The system includes an arch comprising at least one fixing branch for fixing the arch to an MEG helmet, a support plate on which the branch is fixed, a sensor support post fixed to the support plate of the arch; and a locking component for fixing the reference sensor to the post in at least one position defining the position with respect to an MEG helmet.

IPC Classes  ?

• A61B 5/245 - Detecting biomagnetic fields, e.g. magnetic fields produced by bioelectric currents specially adapted for magnetoencephalographic [MEG] signals
• A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
• A61B 90/00 - Instruments, implements or accessories specially adapted for surgery or diagnosis and not covered by any of the groups , e.g. for luxation treatment or for protecting wound edges

Abstract

A thermoset material obtained from a curing by heat treatment of a resin that can be obtained by polycondensation, in basic medium, of at least one phthalonitrile compound bearing on its benzene ring at least one hydroxyl group.

IPC Classes  ?

• C08G 73/08 - Polyhydrazides; Polytriazoles; Polyaminotriazoles; Polyoxadiazoles
• C08K 3/04 - Carbon
• C08K 7/06 - Elements

Abstract

The present description concerns an optical filter intended to be arranged in front of an image sensor comprising a plurality of pixels, the filter comprising, for each pixel, a resonant cavity comprising a first transparent layer, interposed between second and third mirror layers, and a diffraction grating formed in the first layer, wherein at least one of the cavities has a different thickness than another cavity.

IPC Classes  ?

• G02B 5/28 - Interference filters
• G01J 3/28 - Investigating the spectrum

Abstract

A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level having vias includes providing the first level and a dielectric layer, randomly depositing particles on the dielectric layer, depositing an etching mask on the dielectric layer and the particles, and planarizing, so as to obtain a composite layer including the particles. The method also includes forming a lithographic layer having opening patterns, etching the composite layer through the opening patterns to form mask openings, then etching the dielectric layer through the mask openings, so as to obtain functional via openings and degraded via openings, and filling the via openings so as to form the vias of the interconnection level, said vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/311 - Etching the insulating layers

Abstract

A method for manufacturing a thermoelectric structure including the following steps: a) providing a substrate made from a first material, b) depositing a thermoelectric element made from a second material on the substrate, by additive manufacturing, preferably by SLS or PBF, c) thinning and cutting the substrate until a film made from the first material is obtained, by means of which a thermoelectric structure comprising a film and the thermoelectric element is obtained.

IPC Classes  ?

• H10N 10/01 - Manufacture or treatment

Abstract

An OPM sensor fastening system includes a support socket for positioning the sensor, the support socket having a base and a housing for accommodating a portion of the OPM sensor, and a locking part for locking the sensor in the support socket, the locking part having an open base suitable for accommodating the base of the socket, a housing for accommodating a portion of the OPM sensor, and a removable partition suitable for letting the OPM sensor pass. The locking part is configured to press-fittingly cooperate with the support socket so as to blockingly wedge the OPM sensor in the longitudinal position relative to the socket.

IPC Classes  ?

• A61B 5/245 - Detecting biomagnetic fields, e.g. magnetic fields produced by bioelectric currents specially adapted for magnetoencephalographic [MEG] signals
• A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons

Abstract

A method for manufacturing a thermoelectric structure including the following steps: a) providing a substrate, covered with a metal layer, b) forming a thermoelectric element on the metal layer, by additive manufacturing, preferably by SLS or PBF, and c) optionally removing the substrate, by means of which a thermoelectric structure, which comprises the metal layer and the thermoelectric element, is obtained.

IPC Classes  ?

• H10N 10/01 - Manufacture or treatment

Abstract

A tandem photovoltaic structure including, from the rear face to the front face: a first solar cell—with a silicon heterojunction: a first layer of a first conductivity type made of amorphous silicon and a substrate of doped crystalline silicon disposed between two layers of intrinsic amorphous silicon, a recombination zone comprising a layer of nanocrystalline or monocrystalline silicon of the second conductivity type, a second solar cell comprising an active layer made of a perovskite material and a second layer of a second conductivity type. The recombination zone further includes a layer of the first conductivity type in contact with the active layer of the second cell or a layer of nanocrystalline or monocrystalline silicon of the first conductivity type in contact with the active layer of the second solar cell.

IPC Classes  ?

• H10K 30/57 - Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells

Abstract

A novel method for automatically analyzing reflectograms in order to classify impedance discontinuities detected via their temporal or spectral signatures into various categories relating to potential faults or other physical elements present on the cable. A method for detecting the mutual influence of neighboring pulses in a reflectogram in order to separate them so as to isolate them and characterize each pulse accurately.

IPC Classes  ?

• G01R 31/08 - Locating faults in cables, transmission lines, or networks
• G01R 31/11 - Locating faults in cables, transmission lines, or networks using pulse-reflection methods

Abstract

The present disclosure relates to a converter (1) converting a voltage (Vin) into time. The converter comprises a direct path (100) including a first injection-locked oscillator (104) and a first circuit (106). The first circuit is configured for receiving an output signal (Φsens) of the first oscillator and a reference signal (Φ0), and for providing at least a first pulse signal (out) determined by a phase shift between the output signal (Φsens) of the first oscillator and the reference signal (Φ0). The converter further comprises a feedback loop (102) comprising a second circuit (108) configured for integrating said at least one first pulse signal (out).

IPC Classes  ?

• G04F 10/10 - Apparatus for measuring unknown time intervals by electric means by measuring electric or magnetic quantities changing in proportion to time

Abstract

A switch based on a phase change material including: a region in said phase change material that couples the first and second conductive electrodes of the switch; and a waveguide including a first end in line with a face of the region in said phase change material and a second end, opposed to the first end, designed to be illuminated by a laser source.

IPC Classes  ?

• H10N 70/20 - Multistable switching devices, e.g. memristors
• G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

A micro-electromechanical device includes a frame; a proof mass connected to the frame through a first mechanical link which allows pivoting of the proof mass to relative to the frame about a first axis of rotation parallel to a mean plane of the frame; and a lever for detecting pivoting of the mass, connected to the proof mass through a second mechanical link allowing rotation of the lever relative to the proof mass about a second axis. The second link includes two walls connecting perpendicularly to each other, one to the lever and the other to the proof mass, one of the walls being parallel to the second axis of rotation.

IPC Classes  ?

• G01C 19/5747 - Structural details or topology the devices having two sensing masses in anti-phase motion each sensing mass being connected to a driving mass, e.g. driving frames

Abstract

An opto-mechanical structure includes a substrate extending along a plane; a support element arranged on the substrate; a conductive element adapted to create an electric field oriented perpendicularly to the plane of the substrate; and an opto-mechanical resonator. The opto-mechanical resonator includes a mechanically movable element made of a piezoelectric material and arranged on the support element, the piezoelectric material being chosen so that the electric field created by the conductive element when the same is subjected to an electric potential causes a displacement of the movable element; an optical resonator coupled to the movable element. The conductive element is located above or below the movable element, at a non-zero distance from the movable element, the conductive element and the movable element having a surface facing each other.

IPC Classes  ?

• G02B 26/00 - Optical devices or arrangements for the control of light using movable or deformable optical elements
• B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
• H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators

Abstract

A method for manufacturing a phase change stack having a crystallographic structure made of layers separated by van der Waals pseudo-gaps, may include: providing a substrate; forming the stack on the substrate, including (i) forming the first layer, and (ii) forming the second layer on the first layer. Advantageously, after formation of the stack, at least one curing annealing is carried out. The curing annealing may be such that the stack has, after annealing, a nominal defect rate less than at least 50% of an initial defect rate of the stack.

IPC Classes  ?

• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
• C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"
• C30B 33/02 - Heat treatment
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level including vias, includes providing the first level and a dielectric layer, forming an etching mask on the dielectric layer, randomly depositing particles on the etching mask, and forming a lithographic layer having opening patterns. The mask layer is etched through opening patterns to form mask openings, then the dielectric layer is etched through the mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

IPC Classes  ?

• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
• H01L 21/311 - Etching the insulating layers
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

Abstract

A data storage circuit includes an array of memory cells; a logic processing circuit configured to carry out a logic operation having N binary data as operands stored in N input memory cells, with N≥2, the second input/output nodes of the input memory cells being linked by a common bit line, the logic processing circuit comprising: a transimpedance amplifier stage configured to supply an analogue read signal from the voltage of the common bit line; a comparator intended to compare the analogue read signal with a first adjustable reference voltage in order to generate a digital output signal corresponding to the result of the logic operation; a control unit configured to adjust the reference voltage to an amplitude selected from among N distinct predetermined amplitudes, depending on the type of logic operation.

IPC Classes  ?

• G11C 11/22 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits

Abstract

A device for locating objects stored in a storage unit includes a plurality of storage spaces, each object being equipped with an RFID tag, the object-locating device comprising: a plurality of inhibitor circuits each intended to be placed in an associated storage space and configured to prevent the RFID tag of the object from being read by an RFID reader, a control unit configured to control activation of the inhibitor circuits in a predetermined activation sequence; a locating unit configured to control the RFID reader, and to receive, in each step of the activation sequence, a list of identifiers of the objects stored in the storage unit, the list being supplied by the RFID reader, and configured to identify the storage space of each object based on the lists of identifiers and on the activation sequence.

IPC Classes  ?

• G06K 7/10 - Methods or arrangements for sensing record carriers by corpuscular radiation
• G01S 5/02 - Position-fixing by co-ordinating two or more direction or position-line determinations; Position-fixing by co-ordinating two or more distance determinations using radio waves
• G06Q 10/087 - Inventory or stock management, e.g. order filling, procurement or balancing against orders

Abstract

A method for determining the operating state of a light-emitting implant implanted in the brain of a living being, the light-emitting implant including a light source responsible for emitting light into the brain of the living being, the method using a diagnosing device that includes a receiver of a light signal transmitted through a first eye of the living being and a device for determining the operating state of the light-emitting implant based on the received transmitted light signal.

IPC Classes  ?

• G01J 1/44 - Electric circuits
• A61N 5/06 - Radiation therapy using light

Abstract

A supercapacitor that includes: a first electrode; a second electrode; and a composite solid electrolyte disposed between the first electrode and the second electrode. The composite solid electrolyte includes a dielectric matrix and an ionic conductor disposed in channels/pores in the dielectric matrix. Methods of fabricating such supercapacitors are also disclosed.

IPC Classes  ?

• H01G 11/56 - Solid electrolytes, e.g. gels; Additives therein
• H01G 11/06 - Hybrid capacitors with one of the electrodes allowing ions to be reversibly doped thereinto, e.g. lithium ion capacitors [LIC]
• H01G 11/50 - Electrodes characterised by their material specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation
• H01G 11/84 - Processes for the manufacture of hybrid or EDL capacitors, or components thereof

Abstract

It is essential to have efficient, simple, quick and transportable tools for reliably identifying bacteria that are multiresistant to antibiotics, more specifically extended spectrum β-lactamase (ESBL)-producing Enterobacteriaceae, which are the most widespread among Enterobacteriaceae. The present invention meets this requirement through its ease of use and its speed. The invention is based on detecting the enzyme activity of β-lactam hydrolysis using an antibody capable of discriminating between the intact form of the β-lactam ring of a β-lactam and its hydrolysis product. This antibody can be used in kits and methods enabling for rapidly detecting (in less than one hour), without using expensive equipment (a small strip visible to the naked eye), the presence of bacteria producing penicillin-type, plasmid-mediated or hyper-produced AmpC enzymes, of ESBL or carbapenemase from colonies or in a sample.

IPC Classes  ?

• C12Q 1/34 - Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving hydrolase
• C12Q 1/18 - Testing for antimicrobial activity of a material

Abstract

A device for detecting infrared radiation includes at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first bandgap and a first conduction-band minimum; at least a second layer having a second bandgap and a second conduction-band minimum strictly lower than the first conduction-band minimum; a third layer having a third bandgap narrower than the first and second bandgaps and a third conduction-band minimum strictly lower than the second conduction-band minimum. The elementary group is produced in a first stacking configuration in the following order: the second layer, the third layer, the second layer, then the first layer; or in a second stacking configuration such that the third layer is confined between the first and second layers.

IPC Classes  ?

• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• H01L 27/146 - Imager structures
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 31/09 - Devices sensitive to infrared, visible or ultra- violet radiation

Abstract

An electronic chip including a substrate and, on the side of one face of the substrate, a metal pad intended to receive a soldering material, the pad including, in order from said face of the substrate, a first metal layer, an electrically conductive barrier layer, and a second metal layer, wherein an electrically insulating barrier layer is arranged on, and in contact with, the sidewall of the first metal layer over the entire periphery of the metal pad.

IPC Classes  ?

• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices

Abstract

An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; wherein one amongst the main faces is provided with oblique portions (114) each configured to deflect a portion of the received light towards the sample (102), and with planar portions (116) configured to let the light backscattered by the sample pass, and wherein each pixel (120) of the imager (118) is arranged opposite one of the planar portions (116) of said one amongst the first and second main faces (108, 110).

IPC Classes  ?

• G01N 21/47 - Scattering, i.e. diffuse reflection

Abstract

A radio-frequency switch able to establish or break transmission of a radio-frequency signal, the switch including a first conductive finger, a second conductive finger, transmission of the radio-frequency signal taking place between the first conductive finger and the second conductive finger, at least one conductive electrode and a layer made of a PCM material having a lower surface and an upper surface. The first and second conductive fingers are spaced apart by a non-zero distance and in contact with the lower surface of the PCM layer. The conductive electrode is in contact with the upper surface of the PCM layer.

IPC Classes  ?

• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
• H10N 79/00 - Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group

Abstract

A micro-electromechanical device of the inertial sensor type, includes a support, a movable frame, translationally guided along an axis of displacement parallel to the support, and including a proof mass which extends from a first end, connected to the support through a mechanical link, up to a second end, the mass being connected, on the side of the second end, to a member for detecting pivoting of the mass with respect to the frame. The link includes a thin, flexible wall which extends parallel to the support, from the frame to the first end of the proof mass, along a mean line which is parallel to the axis of displacement of the frame.

IPC Classes  ?

• G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure

Abstract

A device for regrowth of a thick structure lattice-matched with InP comprising: a Si substrate, an interface layer of SiO2 on the Si substrate, a bonding layer on the interface layer, said bonding layer being made of a III-V material consisting of an alloy of the AlGaInAs family, and a regrowth layer on the bonding layer, said regrowth layer being made of InP.

IPC Classes  ?

• H01S 5/02 - Structural details or components not essential to laser action

Abstract

A data storage circuit includes a matrix of memory cells such that each memory cell comprises: a read circuit associated with at least one memory cell, comprising: a capacitive transimpedance amplifier stage configured to read a datum stored in a memory cell; the capacitive transimpedance amplifier stage comprising: an operational amplifier; a feedback capacitive impedance mounted between the output and the first input of the operational amplifier; a sequencer circuit configured to, following the reading of a datum corresponding to the second logic state, apply a control signal to the first input/output node having an amplitude lower than the first reference signal and maintain the selection transistor in an on state so as to replace, in the selected elementary storage component, a level of charges corresponding to the second logic state.

IPC Classes  ?

• G11C 11/22 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Abstract

The present invention concerns a novel human erythroid progenitor cell line, wherein at least 90% of the cells are CD36+ CD44−CD71+; and wherein the cells:—do not express the gene encoding the receptor of Granulocyte-macrophage colony-stimulating factor (GM-CSF-R gene) or express GM-CSF-R gene at a lower level than the cells of human UT-7/Epo-S1 cell line; and—express the gene encoding the receptor of erythropoietin (Epo-R gene). The present invention also concerns the uses thereof for producing, detecting, or quantifying parvovims B19. The present invention allows the use of the cell lines for 1) a highly sensitive B19 infectious particles detection, and, 2) the efficient production of infectious B19 particles.

IPC Classes  ?

• C12N 5/078 - Cells from blood or from the immune system
• C12N 5/00 - Undifferentiated human, animal or plant cells, e.g. cell lines; Tissues; Cultivation or maintenance thereof; Culture media therefor
• C12N 7/00 - Viruses, e.g. bacteriophages; Compositions thereof; Preparation or purification thereof
• G01N 33/50 - Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing

Abstract

An interconnector for solar cell strings intended to form a photovoltaic module, the interconnector comprising at least one cell interconnecting strip extending beyond a cell located at the end of the string through an end, and at least one string interconnecting strip, a section of one from among the cell interconnecting strip and the string interconnecting strip has a substantially constant surface, and a variable shape between a first zone of a first thickness and a second zone of a second thickness, the second thickness being strictly less than the first thickness and the second thickness being strictly less than 50 μm. Each second zone thus constitutes a resistance welding zone without loss in terms of conduction. Without extra thickness at the interconnections, the risk of the module breaking is limited.

IPC Classes  ?

• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
• H01L 31/048 - Encapsulation of modules
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A tandem photovoltaic structure including, from the rear face to the front face: a first SHJ solar cell comprising a first layer of P-type doped amorphous silicon and a substrate of N-type doped crystalline silicon, a junction layer, a second perovskite-type solar cell comprising an active layer and a second P-type layer, the junction layer being made of N-type TCO and being in direct contact either with the second P-type layer or with the first P-type layer, one amongst the first or second solar cell also comprising an N-type layer, the junction layer serving as an N-type layer in the other one amongst the first or second solar cell.

IPC Classes  ?

• H10K 39/15 - Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells

Abstract

A photodiode including a detection portion made of a first germanium-based crystalline semiconductor material, including a first doped region, a second doped region, and an intermediate region; an interposed portion, in contact with the first doped region, made of a crystalline semiconductor material having a natural lattice parameter equal, to within 1%, to a natural lattice parameter of the first semiconductor material, and a bandgap energy at least 0.5 eV higher than that of the first semiconductor material.

IPC Classes  ?

• H01L 31/0224 - Electrodes
• H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
• H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present description concerns an electronic device comprising: —a silicon layer having a first surface and a second surface, —an insulating layer in contact with the first surface of the silicon layer, —at least one transistor comprising source, drain, and body regions arranged in the silicon layer, and a gate region topping the body region and comprising a gate portion laterally extending beyond the source and drain regions, the body region being continued by a body contact region not covered with the gate region, and a region of extension of the body region being located under the gate portion; the gate portion being less heavily doped than the rest of the gate region.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
• H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

The present description concerns an electronic device comprising: a silicon layer, an insulating layer in contact with a first surface of the silicon layer, a transistor comprising source, drain, and body regions arranged in the silicon layer, and a gate region topping the body region and comprising a gate portion laterally extending beyond the source and drain regions, the body region being continued by a body contact region not covered with the gate region, and a region of extension of the body region being located under the gate portion; the device further comprising, under the gate portion, a partial insulating trench in the silicon layer extending from a second surface of the silicon layer down to a depth smaller than the thickness of the silicon layer.

IPC Classes  ?

• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

Abstract

A method for manufacturing an electrical conductor, such as a current rod, comprising the following successive steps: —providing a core made of a first metallic material, —providing a sheath made of a second metallic material, the sheath being intended to cover a first part of the core, —providing a connection terminal made of a third metallic material, —assembling the core and the connection terminal, by crimping, or by crimping and brazing, or by braze welding, or by brazing, —assembling the core and the connection terminal with the sheath.

IPC Classes  ?

• H01M 8/0206 - Metals or alloys
• B23K 20/02 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press
• B32B 1/08 - Tubular products
• B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte

Abstract

A device and a method for automatically deploying a communication network between a moving vehicle VM and a rear base BA, the moving vehicle moving from an initial position along a trajectory T. The deployment involves positioning a plurality of communication relay appliances along the trajectory of the VM to form, between the VM and the rear base, a two-way, linear wireless mesh communication network, such that the communications between the moving vehicle and the rear base maintain a communication link quality Q that is equal to or greater than a threshold value S. Each communication relay appliance is an autonomous mobile appliance, called Autonomous Robotic Communication Relay RCRA, capable of autonomously moving and of being positioned along the trajectory T followed by the VM in order to allow the quality of the communication link to be maintained.

IPC Classes  ?

• H04W 36/00 - Handoff or reselecting arrangements
• H04W 36/30 - Reselection being triggered by specific parameters by measured or perceived connection quality data
• H04W 36/32 - Reselection being triggered by specific parameters by location or mobility data, e.g. speed data

Abstract

A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and first stack comprising a third encapsulation layer coating the side faces of the second layer and a fourth encapsulation layer coating the third layer and being in a material having a lower density than that of the material of the third layer.

IPC Classes  ?

• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
• H10B 63/10 - Phase change RAM [PCRAM, PRAM] devices
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

An integration system and method for the manufacture of radio frequency transmission front-end modules with radio frequency integrated circuit(s) and self-biased magnetic component(s) integrated on a “Wafer Level Packaging”-type technology. This integration makes it possible to design efficient, compact and low-cost front-end modules.

IPC Classes  ?

• H04B 1/04 - Circuits
• H04B 1/036 - Cooling arrangements

Abstract

A method for crystallising an amorphous layer included in a stack, extending directly in contact with a crystalline layer of the stack by forming an interface with the crystalline layer, and having a first face opposite the interface, and having a melting threshold EM corresponding to the energy density to be provided to the amorphous layer to achieve its melting, for a thickness Ep of the amorphous layer defined between the first face and the interface, the method including a crystallisation annealing of the amorphous layer by subjecting it, by zones, to laser pulses, and in each zone, the laser pulses are emitted by series, each laser pulse having an energy density EDi different from one series to another so as to maintain the energy density of the pulses of each series below the melting threshold.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level, and an interconnection level comprising vias, includes providing the first level and a dielectric layer, forming an etching mask having openings on the dielectric layer, and randomly depositing particles in the openings, by deposition then recirculating the particles on the surface of the etching mask. The dielectric layer is etched through mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

Abstract

A method for transferring an adhesive layer of thermoplastic polymer(s) from a first substrate to a second substrate including: depositing an antiadhesive layer on a first substrate, this layer being deposited on the periphery of the top face of said substrate, referred to as peripheral layer, thus providing on said top face a zone devoid of said layer, referred to as central zone; depositing an adhesive layer of thermoplastic polymer(s) on said central zone; depositing an antiadhesive layer on a second substrate, this layer being deposited on the top face of the second substrate excluding its periphery, said periphery being thus devoid of said antiadhesive layer; bonding the first substrate and the second substrate consisting of thermocompressing the top face of the first substrate onto the top face of the second substrate; removing the first substrate, whereby the second substrate remains, of which the top face is coated by the adhesive layer of thermoplastic polymer(s).

IPC Classes  ?

• C09J 7/20 - Adhesives in the form of films or foils characterised by their carriers

Abstract

A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and a third insulating layer interposed between the first and second layers, in a material having a density higher than that of the material of the second layer.

IPC Classes  ?

• H10N 70/20 - Multistable switching devices, e.g. memristors
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

An electronic component includes a substrate, an active stack formed above the substrate and including: a layer of p-type doped Gallium Nitride GaN, disposed above the substrate, and a layer of a semiconductor material disposed on the layer of p-type doped Gallium Nitride GaN; the component including two side zones located on either side of the layer of p-type doped GaN, the two side zones being oxygen-implanted.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
• H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
• H01L 29/66 - Types of semiconductor device

Abstract

Measuring device (1) intended to be disposed against a medium, the device extending between a contact face (10) intended to be applied facing the medium and a distal end (4), the device including a lateral wall (5) extending between the contact face and the distal end, the device including: at the level of the contact face (10), at least one admission opening (12) configured to collect a transcutaneous gas of interest emitted through the medium, the admission opening being through the contact face; a measuring chamber (20) including a gas sensor (23), the gas sensor being configured to measure a concentration of the gas of interest flowing through the measuring chamber; a collecting chamber (30) connected to the measuring chamber and delimited by an opening on the lateral wall, the collecting chamber including at least one lateral opening (34) through the lateral face or on the top wall of the collecting chamber so as to admit a vector gas into the collecting chamber; the device being characterized in that: the measuring chamber (20) is disposed between the contact face (10) and the collecting chamber (30); the device includes a pump (41) configured to drive a vector gas through the collecting chamber to an evacuation opening (42) so that driving the vector gas induces aspiration of the gas of interest from the contact face to the collecting chamber via the measuring chamber.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters

Abstract

A pixel circuit comprising: a light-sensing element; a first transistor having its control node coupled to a sense node and its source coupled to a readout path of the pixel circuit; and a reset voltage correction circuit comprising: a first switch configured to selectively couple an input node of the reset voltage correction circuit to a correction node, the input node being connected to the sense node or to the source of the first transistor, the correction node being coupled by a capacitance to the sense node; and a second switch configured to selectively couple the correction node to a reset voltage.

IPC Classes  ?

• H04N 25/65 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
• H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Abstract

A method for joining, by brazing, a first part and a second part, the steps of preparing at least one of the parts including the following: a) providing a part intended to be brazed, the part being made of carbon or based on titanium, nickel or a CoCr alloy, b) performing inert gas plasma treatment on the part whereby the part is cleaned and an active surface is formed on the part, c) depositing a first layer comprising an active element on the active surface of the part, the active element being a carbide-forming element, d) depositing a second layer of gold on the first layer, whereby the first layer is protected from oxidation and good wetting is ensured.

IPC Classes  ?

• B23K 1/20 - Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
• B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C

Abstract

A method for stripping U(VI) and an An(IV) from an organic solution including tri-n-butyl phosphate in an organic diluent, the solution containing U(VI) and the An(IV) present as U(VI) nitrate and An(IV) nitrate at concentrations such that the U(VI) nitrate concentration is higher than the An(IV) nitrate concentration, and the sum of the U(VI) nitrate and An(IV) nitrate concentrations is ≥55 g/L. The method includes contacting the organic solution and an aqueous solution of nitric and oxalic acids, the oxalic acid concentration in the aqueous solution and the O/A volume ratio selected so that the oxalic acid is deficient with respect to the stoichiometric conditions of a complete precipitation of U(VI) and actinide(IV), to obtain a precipitate containing the actinide(IV) in oxalate form and a fraction of the U(VI) in oxalate form with a U(VI)/actinide(IV) mass ratio of between 0.5 and 5; and separating the precipitate from the organic and aqueous solutions.

IPC Classes  ?

• G21F 9/12 - Processing by ion-exchange

Abstract

A method for controlling access of a user equipped with a terminal to a physical or logical resource, the method involving a secure cryptographic device forming a token corresponding to an access criterion, the access token being intended to generate a keystream masking a biometric reference of the user obtained by a biometric reader of the terminal. The biometric reference thus masked is encrypted by fully homomorphic encryption and stored in a database hosted by a remote server. An access control operator obtains a biometric characteristic of the user, homomorphically encrypts it and transmits it to the remote server. This server compares the first and second biometric models in the homomorphic domain and supplies the homomorphically-encrypted result of the comparison to the access control operator. The latter grants or denies access to the user according to the result of the comparison, after having decrypted it.

IPC Classes  ?

• H04L 9/32 - Arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system

Abstract

The present description concerns an image sensor formed inside and on top of a semiconductor substrate, the sensor comprising a plurality of pixels, each comprising a photodetector formed in the substrate, the sensor comprising at least first and second bidimensional metasurfaces stacked, in this order, in front of said plurality of pixels, each metasurface being formed of a bidimensional array of pads, the first metasurface having a first optical function and the second metasurface having a second optical function different from the first optical function.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

The present invention pertains to a continuous process for the manufacture of an electrode, to the electrode obtained therefrom and to an electrochemical device comprising said electrode.

IPC Classes  ?

• H01M 4/04 - Processes of manufacture in general
• H01M 4/139 - Processes of manufacture
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers

Abstract

A device and a method for the anonymous transmission of information, the transmission being a point-to-multipoint communication or a multipoint-to-multipoint communication between members of one and the same trusted network, a trusted network being predefined by a plurality of members and a plurality of independent proxies, the communication within a trusted network taking place on an anonymization network platform that masks the IP addresses of the members of the trusted network, the method being computer-implemented and comprising steps of: a member of a trusted network, comprising N′ members and N proxies, generating a plurality N of complementary data fragments, from an initial data packet, such that recombining the N complementary fragments makes it possible to reconstruct the initial data packet; the sending member transmitting, via the anonymization network platform, each generated complementary fragment to an independent proxy from among the N proxies, respectively; each independent proxy retransmitting, via the anonymization network platform, the complementary fragment received from the sending member to the plurality N′ of members of the trusted network; and each receiving member of the trusted network recombining the plurality N of received complementary fragments in order to reconstruct the initial data packet.

IPC Classes  ?

• H04L 9/40 - Network security protocols
• G06F 21/62 - Protecting access to data via a platform, e.g. using keys or access control rules

Abstract

A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: OUT(z)=IN(z)·FTS(z)+Q(z)·FTB(z), A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: OUT(z)=IN(z)·FTS(z)+Q(z)·FTB(z), where OUT is the output signal of the sigma-delta modulator, IN is the input signal of the sigma-delta modulator, FTS is the transfer function of the input signal, Q is the quantization noise and FTB is the transfer function of the quantization noise, the second terms of the transfer function of the sigma-delta modulator only being distinct from one another for two channels Vi, Vj, in order to decorrelate the quantization noise of distinct channels, the first term of said transfer function for channel Vi being equal to the first term of said transfer function for channel Vj.

IPC Classes  ?

• H03M 3/00 - Conversion of analogue values to or from differential modulation
• H03M 1/08 - Continuously compensating for, or preventing, undesired influence of physical parameters of noise

Abstract

A method for manufacturing at least one photovoltaic cell includes the following steps: (a) providing at least one plate, the plate having a first face and a second face opposite the first face; (b) providing a support device; (c) positioning the plate placing the first face of the plate in contact with the support device; (d1) forming a first conductive material on the first face of the plate; (d2) forming a second conductive material on the second face of the plate. At least one of the first and second conductive materials is transparent, the support device includes at least one wire, and, during all or part of step (d1), the first face of the plate bears on the wire.

IPC Classes  ?

• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells

Abstract

A process for fabricating an optoelectronic device having a germanium-on-silicon photodiode coupled to an Si3N4 waveguide includes producing a semiconductor substrate having a semiconductor stack of thin layers configured to form segments of a semiconductor structure of the photodiode, producing a photonic substrate having the Si3N4 waveguide, and transferring and bonding the semiconductor substrate to the photonic substrate. The photodiode is produced by photolithography and etching of the semiconductor stack to form the semiconductor structure which is then located above the waveguide.

IPC Classes  ?

• G02B 6/132 - Integrated optical circuits characterised by the manufacturing method by deposition of thin films
• H01L 31/0232 - Optical elements or arrangements associated with the device
• H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
• H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A method for executing a machine code with a computer, including constructing a signature for a current instruction on the basis of signals generated by a stage of a hardware processing path, this stage being a decoder or a stage following the decoder in the hardware processing path, and on the basis of the preceding signature constructed for an instruction which precedes it, then checking the integrity of the executed machine code by comparing the signature constructed for the current instruction with a prestored reference signature, then only when the integrity of the current instruction has been checked successfully, decrypting a cryptogram of the following instruction using the signature constructed for the current instruction.

IPC Classes  ?

• G06F 9/30 - Arrangements for executing machine instructions, e.g. instruction decode
• H04L 9/08 - Key distribution
• H04L 9/32 - Arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system

Abstract

A device for modifying at least the direction of magnetization of a magnetic layer, the modifying device including a ferroelectric layer having a ferroelectric polarization, arranged on or under the magnetic layer so as to define a stack including at least the magnetic layer and the ferroelectric layer, a generator apt to inject an electric current into the stack along a direction parallel to the plane of the layers of the stack, and a modification unit apt to modify the ferroelectric polarization of the ferroelectric layer, for modifying, with the generator, the direction of magnetization of the magnetic layer.

IPC Classes  ?

• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• G11C 19/08 - Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
• H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• H10N 50/80 - Constructional details
• H10N 52/00 - Hall-effect devices

Abstract

A multichannel transmitter device includes, on each channel: a transmission processing channel designed to process an input signal and comprising a predistortion block applying a predistortion to the input signal on the basis of predistortion coefficients, a DAC, a first analogue filter, a power amplifier and a sigma-delta encoder between the predistortion block and the digital-to-analogue converter and designed to carry out notably a quantization of the predistortion block; a return channel associated with the transmission processing channel and comprising a block for estimating predistortion coefficients so as to estimate predistortion coefficients on the basis of the input signal and of a feedback signal; the transmitter device wherein the block for estimating predistortion coefficients is designed to estimate the predistortion coefficients on the basis of at least the input signal and of a signal resulting from the subtraction, from the feedback signal, of a signal representing the quantization noise resulting from the quantization carried out by the sigma-delta encoder.

IPC Classes  ?

• H04B 1/04 - Circuits

Abstract

An interconnection structure includes a substrate formed by a first electrically insulating and optically transparent material, the substrate including a first face and an opposite second face, the first face defining a plane of the substrate, and a plurality of transparent electrodes, wherein the transparent electrodes pass through the substrate from the first face to the second face of the substrate in parallel to each other, and are electrically insulated from each other by the first electrically insulating and optically transparent material.

IPC Classes  ?

• G01N 33/483 - Physical analysis of biological material
• G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated

Abstract

A system and method for controlling operating modes of a system, each operating mode being implemented by an execution of one or more software components. This control system includes software components called elementary components, each elementary component having at least one input able to receive input data and/or at least one output able to transmit output data; and at least one software meta-component including one or more internal wiring diagrams, each internal wiring diagram defining interconnections between inputs and outputs of elementary components and/or meta-components, a transition logic between states defining a current state of said system and a sequence between states at least some of the states corresponding to an implementation of an internal wiring diagram, a mechanism for controlling the internal configurations, and a programming interface providing services/functions implementing at least one internal wiring scheme.

IPC Classes  ?

• G05B 19/4155 - Numerical control (NC), i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by programme execution, i.e. part programme or machine function execution, e.g. selection of a programme
• B25J 9/16 - Programme controls

Abstract

A method may form an electroconductive and hydrophobic microporous layer (MPL) at an active layer surface configured for an electrochemical converter, including: (a) providing a non-aqueous dispersion, called “ink”, including a carbon-based particulate material and an organic solvent; (b) forming an ink deposit at the active layer surface; and (c) evaporating the solvent(s) to form a microporous layer, simultaneously and/or subsequently to the forming (b). The ink may include poly(vinylidene fluoride-co-hexafluoropropene), dissolved in the organic solvent. Ink may prepare such a microporous layer, and a multilayer structure including an active layer supported by a solid electrolyte membrane and contacting, at its face on the opposite side the solid membrane, with a microporous layer obtained by the such a method. A membrane-electrode assembly may include such a multilayer structure. Such an MEA may be used in an individual cell of an electrochemical converter, in particular in a PEMFC.

IPC Classes  ?

• C09D 11/52 - Electrically conductive inks
• C09D 11/033 - Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
• C09D 11/037 - Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
• C09D 11/106 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
• H01M 8/1004 - Fuel cells with solid electrolytes characterised by membrane-electrode assemblies [MEA]

Abstract

The invention is based on a method for producing an individualisation zone of a chip comprising a component level and a contact level comprising vias, the method comprising the following steps: providing the components level and a dielectric layer, forming a mask on the dielectric layer, etching the dielectric layer through mask openings so as to form openings opening onto the contact zones of the components level, forming fluorinated residue by inputting fluorinated species on at least some contact zones, the openings thus comprising openings with fluorinated residue and openings without residue, filling the openings so as to form the vias of the contact level, said vias comprising functional vias at the openings without residue and altered vias at the openings with residue.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/8234 - MIS technology
• H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns

Abstract

An image sensor provided with a pixel including a photosensitive region formed in a semiconductor substrate and surrounded by a peripheral isolation trench; a sense node formed on a charge collecting region; a charge transfer gate around the sense node; a well; the pixel being provided with a so-called “detection acceleration” transistor configured to, during a so-called “charge overflow detection” operation, be switched on so as to weaken a potential barrier generated by the transfer gate and thus to favour an overflow of photogenerated charges to the sense node of the photosensitive region and to accelerate detection of this overflow.

IPC Classes  ?

• H04N 25/707 - Pixels for event detection
• G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• G01S 7/481 - Constructional features, e.g. arrangements of optical elements
• H04N 25/47 - Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
• H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Abstract

A method for determining a concentration of an isotope in a fluid, the isotope absorbing neutrons, the method comprising placing a plurality of neutron detectors at various distances from the fluid; irradiating the fluid by a neutron-emitting source, the latter being placed so that emitted neutrons pass through the fluid before reaching the detectors; measuring, by each detector, a quantity representative of an amount of neutrons reaching the detector; and based on the measurements resulting from the measuring, estimating a concentration of the isotope in the fluid. Further, the estimating step includes taking into account a database containing an estimate of the quantity measured by each detector and based on the database, and on the measurements resulting from the measuring step, estimating the concentration of the isotope in the fluid.

IPC Classes  ?

• G01N 23/09 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and measuring the absorption the radiation being neutrons
• G01N 23/02 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material
• G01N 23/12 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and measuring the absorption the material being a flowing fluid or a flowing granular solid
• G01T 7/00 - MEASUREMENT OF NUCLEAR OR X-RADIATION - Details of radiation-measuring instruments
• G01T 3/00 - Measuring neutron radiation

Abstract

A transduction detection device includes a substrate, at least one movable ground relative to the substrate and a suspended stress gauge provided with a piezoresistive element which includes a first anchoring and a second anchoring, different from the first anchoring, relative to the movable ground, wherein it includes at least one thermal dissipator element thermally conductively connected: to a connection portion of the piezoresistive element located outside of the anchorings, and to a thermal discharge part.

IPC Classes  ?

• G01P 15/12 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by alteration of electrical resistance

Abstract

An optoelectronic device includes at least one pixel, each pixel comprising an optical resonator comprising a photodetecting structure confined between a reflective metal layer and a second reflective metal layer; and a readout integrated circuit arranged on a substrate and comprising at least one buried readout electrode dedicated to the pixel and at least one metal or dielectric outer layer. The assembly comprising at least the reflective metal layer and the outer layer of the readout integrated circuit is called a planar assembly structure. The first metal layer is connected to the readout electrode by way of a metal via passing through the optical resonator structure and the planar assembly structure. The metal via is electrically isolated from the photodetecting structure and from the planar assembly structure.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A device for unwinding a strand from a bobbin, which includes: a plate supporting at least one bobbin holder, which extends along an axis substantially perpendicular to the plate and is intended to receive a bobbin capable of rotating about the axis of the bobbin holder; an element for translationally moving the bobbin along the axis of the bobbin holder; and an element for controlling the movement element and configured so as to maintain the strand leaving the bobbin in a substantially constant position along the axis of the bobbin holder.

IPC Classes  ?

• B29C 70/38 - Automated lay-up, e.g. using robots, laying filaments according to predetermined patterns
• B65H 49/32 - Stands or frameworks
• B29C 70/32 - Shaping by lay-up, i.e. applying fibres, tape or broadsheet on a mould, former or core; Shaping by spray-up, i.e. spraying of fibres on a mould, former or core on a rotating mould, former or core

Abstract

The invention relates to a method and a system for the automated detection of the risk of fraud in a monitored system, based on data streams generated by said monitored system and characterizing events performed or generated by operators in said monitored system. The method includes: a pre-processing (30-38) of at least one set of data recorded over a period of time, so as to obtain a subset of critical events associated with an operator; the iterative application of a first parameterized estimation process (52,56) for a risk of fraud, so as to obtain a first legitimacy score and a first associated probability of occurrence; the iterative application of a second parameterized estimation process (54,58) for a risk of fraud, so as to obtain a second legitimacy score and a second associated probability of occurrence, and the comparison (60) of the results of said first and second processes, for determining (64) whether said operator is a legitimate operator or a fraudulent operator.

IPC Classes  ?

• H04L 9/40 - Network security protocols

Abstract

The present description concerns a polarimetric image sensor formed inside and on top of a semiconductor substrate, the second comprising a plurality of pixels, each comprising: —a photosensitive region formed in the semiconductor substrate; —a diffraction structure formed on the side of an illumination surface of the photosensitive region; and —a polarization structure formed on the side of the diffraction structure opposite to the photosensitive region.

IPC Classes  ?

• G01J 3/447 - Polarisation spectrometry
• G01J 3/18 - Generating the spectrum; Monochromators using diffraction elements, e.g. grating

Abstract

A contactless detection device, comprising a detection surface; a plurality of actuators acoustically coupled to the detection surface; an ultrasonic acoustic wave detector; an electronic and/or IT computer, the device being configured to detect one or more element(s) by repeating the following steps: focusing ultrasonic acoustic waves emitted by the actuators into a focusing region, obtained from waves emitted by the actuators and to which a first time reversal method has been applied, and measuring a duration between emitting the waves and receiving an echo of these waves by the detector, wherein the computer is configured to calculate the control signals such that the detection waves are focused successively into focusing regions of different shape and/or sizes.

IPC Classes  ?

• G06F 3/043 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using propagating acoustic waves
• G01S 15/87 - Combinations of sonar systems
• G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
• G01R 23/02 - Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage

Abstract

A depositing head for a plurality of rovings each coming from a bobbin and having a longitudinal axis, the depositing head including a plurality of line roller pairs for rolling the rovings from the bobbins, each roller pair being intended to be associated, in operation, with only a given single roving and including an upstream roller and a downstream roller relative to the direction of unwinding of the rovings, the rollers rotating independently of one another.

IPC Classes  ?

• B29C 70/32 - Shaping by lay-up, i.e. applying fibres, tape or broadsheet on a mould, former or core; Shaping by spray-up, i.e. spraying of fibres on a mould, former or core on a rotating mould, former or core
• B29C 70/38 - Automated lay-up, e.g. using robots, laying filaments according to predetermined patterns
• B29C 70/16 - Fibrous reinforcements only characterised by the structure of fibrous reinforcements using fibres of substantial or continuous length

Abstract

A silica optical fiber resistant to radiations includes a core; a sheath surrounding the core; a polymer coating encasing the sheath, the coating being able to form hydrogen by radiolysis under the effect of the radiations so as to diffuse it into the optical fiber. An optical fiber device comprising at least one such radiation-resistant silica optical fiber.

IPC Classes  ?

• G02B 6/02 - Optical fibres with cladding

Abstract

A computing circuit for computing a weighted sum of a set of first data using at least one parsimony management circuit includes a first buffer memory for storing all or some of the first data delivered sequentially and a second buffer memory for storing all or some of the second data delivered sequentially. The parsimony management circuit furthermore comprises a first processing circuit able: to analyze the first data in order to search for the first non-zero data and define a first skip indicator between two successive non-zero data, and to control the transfer, to the distribution circuit, of a first datum read from the first data buffer memory on the basis of the first skip indicator. The parsimony management circuit furthermore comprises a second processing circuit able to control the transfer, to the distribution circuit, of a second datum read from the second data buffer memory on the basis of the first skip indicator.

IPC Classes  ?

• G06N 3/063 - Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means

Abstract

Method for controlling an electric actuation assembly (1), the method comprising the following steps: Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; establishing, by interpolation, a second characteristic function; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; establishing, by interpolation, a second characteristic function; establishing, on the basis of the first characteristic function, the second characteristic function, a magnetic constant of the motor (11) and a reduction ratio of a gearbox (12), and a control correction coefficient; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; establishing, by interpolation, a second characteristic function; establishing, on the basis of the first characteristic function, the second characteristic function, a magnetic constant of the motor (11) and a reduction ratio of a gearbox (12), and a control correction coefficient; controlling the actuation assembly (1) by applying the control correction coefficient.

IPC Classes  ?

• G05B 19/414 - Structure of the control system, e.g. common controller or multiprocessor systems, interface to servo, programmable interface controller
• G05B 19/4103 - Digital interpolation

Abstract

A method for confidentially querying the presence of a record in a database hosted by a server, the records being stored in the database in the form of digital footprints obtained by hashing a record by a public hash function. The footprints are masked by a stream cipher using a symmetric key of a first user. The first user may grant a second user authorisation to query the database by transmitting the inverse masks of various rows, encrypted by the public key of an additive homomorphic cryptosystem of the second user. The rows of the database are unmasked in the homomorphic domain and the second user transmits an encrypted request to query the base according to a PIR protocol. The second user can decrypt the response from the server using the private key of their homomorphic cryptosystem and determine whether the footprint sought is present in the response thus decrypted.

IPC Classes  ?

• G06F 16/2457 - Query processing with adaptation to user needs
• H04L 9/00 - Arrangements for secret or secure communications; Network security protocols
• G06F 21/31 - User authentication

Abstract

A method for the cryogenic grinding of at least one powder comprising the following steps: (a) introducing a cryogenic fluid into an attrition mill comprising attrition means, (b) introducing the powder or powders into the attrition mill, and (c) setting the attrition mill in rotational motion, and wherein—the ratio VMA/(VMA+VFC) of the volume of the attrition means VMA to the sum of the volume of the attrition means VMA and the volume of the cryogenic fluid VFC is comprised between 0.2 and 0.8, and the rotational speed of the attrition mill during step (c) is between 100 rpm and 20,000 rpm. Further, particles of metal or metal alloy, to the use thereof, to a coating method employing them and to the use of such a coated material.

IPC Classes  ?

• B02C 17/10 - Disintegrating by tumbling mills, i.e. mills having a container charged with the material to be disintegrated with or without special disintegrating members such as pebbles or balls with one or a few disintegrating members arranged in the container
• B02C 17/18 - Disintegrating by tumbling mills, i.e. mills having a container charged with the material to be disintegrated with or without special disintegrating members such as pebbles or balls - Details
• B02C 17/20 - Disintegrating members

Abstract

A thin film on a surface of a solid substrate, including: a) spraying on the surface: —a colloidal suspension including solid nanoparticles (or colloids) of an inorganic compound dispersed in a solvent to obtain a wet layer of the colloidal suspension on the surface; or —a suspension including an inorganic compound in polymeric form in a solvent, to obtain a wet layer of the suspension of the inorganic compound in polymeric form on the surface; or —a solution or suspension of an organic polymer in a solvent, to obtain a wet layer of the solution or suspension of the organic polymer on the surface; b) drying the wet layer; c) optionally, heat-treating the wet layer that has undergone the drying step, whereby the thin film is obtained; wherein: the solvent comprises at least 95% by weight of water, and the drying is carried out in a static atmosphere.

IPC Classes  ?

• C09D 5/33 - Radiation-reflecting paints
• C09D 1/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
• C09D 5/02 - Emulsion paints
• C09D 129/04 - Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
• C09D 171/02 - Polyalkylene oxides
• C09D 7/61 - Additives non-macromolecular inorganic
• C09D 7/20 - Diluents or solvents
• C09D 7/40 - Additives

Abstract

The invention relates to an electrochemical cell having: ∘a membrane electrode assembly (2); ∘two retaining plates (10); ∘a single seal (20) extending around the membrane electrode assembly (2) and disposed in contact with the two retaining plates (10); ∘at least one intermediate leaktight sheet (30) extending around the membrane electrode assembly (2), disposed between the latter and the seal (20) and joined in a leaktight manner to the membrane (4) on the one hand and to the seal (20) on the other.

IPC Classes  ?

• H01M 8/0273 - Sealing or supporting means around electrodes, matrices or membranes with sealing or supporting means in the form of a frame
• H01M 8/0286 - Processes for forming seals
• H01M 8/1018 - Polymeric electrolyte materials
• C25B 9/60 - Constructional parts of cells

Abstract

An electronic device includes first and second quantum dots disposed along a direction, first and second control gates associated with said quantum dots, and a magnet configured to generate two opposite spin states at each of the first and second quantum dots. The magnet includes first and second magnetic domains distributed along the direction and separated by a domain wall. The magnetic domains respectively have first and second magnetisations of opposite directions in the direction. The first and second quantum dots thus receive first and second magnetic field gradients.

IPC Classes  ?

• G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control

Abstract

The present description concerns a method of acquisition of distances from a sensor to a scene, comprising a number N of consecutive capture sub-phases Ci, with N an integer greater than or equal to 2 and i an integer index ranging from 1 to N, each sub-phase Ci comprising: supplying a laser beam having an optical frequency (f) linearly varying over a frequency range of width Bi for a time period Ti; delivering, from the laser beam, a reference beam and a useful beam; and illuminating the scene with the useful beam and illuminating at least one pixel row with a superposition of the reference beam and of a reflected beam. An absolute value of a ratio Bi/Ti is different for each capture sub-phase Ci.

IPC Classes  ?

• G01S 17/32 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
• G01S 7/481 - Constructional features, e.g. arrangements of optical elements
• G01S 7/4911 - Transmitters

Abstract

The disclosure relates to a method for characterizing biological particles in aerosol form, such as suspended in an ambient gas, by laser-induced breakdown spectrometry and an associated system.

IPC Classes  ?

• G01N 15/14 - Electro-optical investigation
• G01N 33/68 - Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving proteins, peptides or amino acids

Abstract

A polymer of hyaluronic acid modified by the grafting thereto of at least one of the functions —SO3− and aromatic rings may be used as dopant for a polymer formed from one or monomers chosen from EDOT, ProDOT, and derivatives thereof. An aqueous suspension, or ink, and materials, in particular hydrogels, based on at least one PEDOT and/or PProDOT polymer may be doped by at least one such modified hyaluronic acid polymer. Such modified hyaluronic acid polymers may be used in bioelectronic or biosensor devices.

IPC Classes  ?

• C08B 37/08 - Chitin; Chondroitin sulfate; Hyaluronic acid; Derivatives thereof
• C08J 3/24 - Crosslinking, e.g. vulcanising, of macromolecules
• C08L 65/00 - Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
• C09D 11/52 - Electrically conductive inks
• C09D 11/102 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
• C08J 3/075 - Macromolecular gels

Abstract

A method for characterizing a mobile particle in a sample includes acquisition of at least one image of the sample during an acquisition period, using an image sensor and formation of a series of images, the series of images comprising at least one image; use of each image of the series of images as input image of a detection convolutional neural network, the detection convolutional neural network being configured to detect the particles and to produce, from each image, an output image on which each detected particle is assigned a distribution of intensity, centered on the particle and extending around the particle; for each detected particle, from each output image, estimation of a position of each detected particle in each image of the series of images; and characterization of each detected particle from the estimation of the position established from each image of the series of images.

IPC Classes  ?

• G01N 15/14 - Electro-optical investigation
• G06V 10/44 - Local feature extraction by analysis of parts of the pattern, e.g. by detecting edges, contours, loops, corners, strokes or intersections; Connectivity analysis, e.g. of connected components

Abstract

A method for producing a vertical component comprising with the basis of a III-N material, comprising providing platelets made of the III-N material obtained by epitaxy on pads, the platelets comprise at least first and second layers doped and stacked on one another in a vertical direction. The method further includes the production of a first electrode and the production of a second electrode located on the platelet and configured such that a current passing from one electrode to the other passes through at least the second layer in all of its thickness, the thickness being taken in the vertical direction.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/66 - Types of semiconductor device
• H01L 29/872 - Schottky diodes
• H01L 29/868 - PIN diodes
• H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
• H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
• H01L 27/085 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only

Abstract

A device for improving the precision of a biomagnetic image of a patient is provided. The device comprises a covering, a plurality of markers and at least five three-axis coils. Three-axis coils and markers of the plurality of markers are placed at the same location on the covering so that, when the covering is positioned on the patient, singular points of the part of the patient can be detected by magnetic resonance imaging and by biomagnetic imaging (MEG, MCG).

IPC Classes  ?

• A61B 5/243 - Detecting biomagnetic fields, e.g. magnetic fields produced by bioelectric currents specially adapted for magnetocardiographic [MCG] signals
• A61B 5/245 - Detecting biomagnetic fields, e.g. magnetic fields produced by bioelectric currents specially adapted for magnetoencephalographic [MEG] signals
• A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons

Abstract

A nano- or microparticle comprising a matrix consisting of or comprising at least one polyvinyl alcohol (PVA) and dispersed therein, ferrite, and a method for producing the same. Further, the use of these nano- or micro-particles for the preparation and the implementation of devices that can be detected by giant magnetoresistance sensors (GMR sensors) as biological diagnostic tools.

IPC Classes  ?

• A61K 49/18 - Nuclear magnetic resonance (NMR) contrast preparations; Magnetic resonance imaging (MRI) contrast preparations characterised by a special physical form, e.g. emulsions, microcapsules, liposomes

Abstract

A method for generating an evidence of the time elapsed between two successive events occurring within a node of an asynchronous network, for example between two transactions emitted by such a node intended to a distributed register (ledger). The node is provided with an embedded system comprising a TPM module generating a control clock, a system clock within a TEE environment and a precision clock. The node verifies the coherence of the clocks by comparing the measurements of the time elapsed between two successive transactions, the measurements having been performed by means of the different clocks. In case of coherence of the measurements, the node emits a transaction proving the elapsed time intended to the distributed register. A verifier node may verify this evidence and certifies that the evidence is verified by emitting a validation transaction to the distributed register.

IPC Classes  ?

• G06F 1/06 - Clock generators producing several clock signals
• H04L 9/40 - Network security protocols

Abstract

An optical focusing and collecting system includes: a first optical shaping portion, including an output surface, adapted to supply a primary light beam which is made annular; a second optical focusing and collecting portion, including a conical upper central reflective surface and a conical lower central reflective surface; a third optical return portion, including a reflective surface located between the output surface and the upper central reflective surface, along a main optical axis (Δ) and having transverse dimensions smaller than those of the annular primary light beam supplied by the first optical portion.

IPC Classes  ?

• G02B 21/04 - Objectives involving mirrors
• G02B 21/16 - Microscopes adapted for ultraviolet illumination
• G02B 17/06 - Catoptric systems, e.g. image erecting and reversing system using mirrors only

Abstract

A connection device is intended for connecting a container for processing waste by high-temperature heat treatment and/or by vitrification with at least one source of products containing the waste and intended to be processed in the container and with a gas-extraction device, the connection device including a cylindrical body including a bottom end intended to be connected to the container, a top end intended to be connected to the at least one source of products and an intermediate opening intended to be connected to the gas-extraction device. The connection device includes a connection element having an element permeable to gases, which extends coaxially with the cylindrical body. The connection element includes a top end located at the top end of the cylindrical body and a bottom section that extends vertically below the bottom end of the cylindrical body.

IPC Classes  ?

• G21F 9/30 - Processing

Abstract

A co-handling robot has a mixed-forced control law providing high effector sensitivity and enabling interaction with the body of the robot. A multi-axis force sensor is carefully positioned between the end member (flange) of an industrial co-handling robot and the tool supported thereby. A modified increased force control law is implemented in the robot controller by introducing a saturation function.

IPC Classes  ?

• B25J 9/16 - Programme controls
• B25J 13/02 - Hand grip control means
• B25J 13/08 - Controls for manipulators by means of sensing devices, e.g. viewing or touching devices

Abstract

The invention relates to an electromechanical microsystem comprising an electromechanical transducer, a deformable membrane and a cavity hermetically containing a deformable medium, preserving a constant volume under the action of an external pressure change. The deformable membrane forms a wall of the cavity and has at least one free zone being deformed. The electromechanical transducer is configured, such that its movement is a function of said external pressure change, and conversely. The free zone engages with an external member, such that its deformation induces, or is induced by, a movement of the external member. The electromechanical microsystem is thus capable of moving the external member or of capturing a movement of this member.

IPC Classes  ?

• B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
• G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate

Abstract

The invention relates to a method for determining an arterial pressure of a user, by measuring a physiological parameter, the physiological parameter passing through an extremum when the transmural pressure of the artery is zero, the method comprising: a) applying a pressure to the artery, so as to modify the transmural pressure of the artery; b) measuring the physiological parameter of the user by means of a sensor; c) establishing a calibration function, the calibration function defining a relationship between the transmural pressure and the parameter; d) applying a pressure to the artery at a measurement time, and measuring the physiological parameter at the measurement time; e) estimating a transmural pressure at the measurement time; f) based on the transmural pressure estimated in step e) and on the pressure applied at the measurement time, estimating an arterial pressure of the user.

IPC Classes  ?

• A61B 5/0225 - Measuring pressure in heart or blood vessels by applying pressure to close blood vessels, e.g. against the skin; Ophthaldynamometers the pressure being controlled by electric signals, e.g. derived from Korotkoff sounds
• A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
• A61B 5/02 - Measuring pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography; Heart catheters for measuring blood pressure
• A61B 5/022 - Measuring pressure in heart or blood vessels by applying pressure to close blood vessels, e.g. against the skin; Ophthaldynamometers

Abstract

An assembly of solar cells is provided with a connection structure arranged opposite and between a peripheral zone of a first solar cell and a second peripheral zone of a second solar cell. The connection structure provides increased mechanical flexibility and includes an oblong conductive portion and a set of conductive blocks distributed over the oblong conductive portion, alternately over a first region of the oblong conductive portion and over a second region of the oblong conductive portion opposite the first region.

IPC Classes  ?

• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells

Abstract

Modified monomers of a Shiga toxin B-subunit (STxB) protein including at least one of: an addition of a reactive unnatural amino acid residue at the C-terminal extremity, and/or a substitution with a reactive unnatural amino acid residue at an amino acid position among Asp 3, Lys 8, Glu 10, Tyr 11, Lys 23, Lys 27, Thr 49, Lys 53, His 58, Asn 59, and Arg 69, reference made to the numbering of STxB from Shigella dysenteriae. Also relates to STxB conjugates, and oligomers, in particular pentamers, of these modified STxB proteins and STxB conjugates; as well as to compositions including the same and their use in treatment, vaccination and diagnosis methods.

IPC Classes  ?

• A61K 47/64 - Drug-peptide, drug-protein or drug-polyamino acid conjugates, i.e. the modifying agent being a peptide, protein or polyamino acid which is covalently bonded or complexed to a therapeutically active agent
• A61K 38/16 - Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof

Abstract

A method and a device for measuring the statistical distribution of a physical quantity by a sensor. At each observation of the physical quantity, the sensor provides, in the form of a binary vector, a quantised value of this quantity. Afterwards, this binary vector is projected onto a measurement space with a smaller dimension than the number of quantisation levels in order to provide a vector representative of the quantised value. The measurement vector of the histogram is updated on the fly by adding thereto the vector representative of the quantised value. Afterwards, this measurement vector may be used as an input variable of a neural network trained beforehand to predict a target variable dependent on the statistical distribution of the physical quantity.

IPC Classes  ?

• G01L 5/16 - Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
• G06F 17/18 - Complex mathematical operations for evaluating statistical data

Abstract

A device for multi-spectral photo-detection in the infrared includes a photo-detection stage and a filtering stage superimposed on top of one another. The photo-detection stage includes a read circuit, an active layer incorporating a matrix of photodiodes, and a support substrate, superimposed together in that order. The filtering stage includes filtering areas of a first type, each formed of an interference filter capable of transmitting the wavelengths of a first spectral band and of blocking the wavelengths of a second spectral band, and filtering areas of a second type, capable of transmitting at least part of the wavelengths of the second spectral band. The device further includes an adhesive layer, located between the photo-detection stage and the filtering stage, on the support substrate side, and an anti-reflective coating, located between the adhesive layer and the support substrate.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A method for obtaining at least one nitride layer based upon a III-N material includes the successive steps of providing a stack having a support substrate and a plurality of pads, each pad including at least one basal section and one germination section carried by the basal section; modifying the basal section so as to form a modified basal section having a lower rigidity that the basal section before modification; and epitaxially growing a crystallite from the top of at least some of the pads of an assembly and continuing the epitaxial growth so as to form the nitride layer on pads on the assembly.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof