Fuji Electric Co., Ltd.

Japan

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        Patent 4,768
        Trademark 40
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        United States 3,178
        World 1,603
        Canada 23
        Europe 4
Owner / Subsidiary
[Owner] Fuji Electric Co., Ltd. 4,808
Fuji Electric FA Components & Systems Co., Ltd. 40
Date
New (last 4 weeks) 50
2024 July (MTD) 25
2024 June 29
2024 May 38
2024 April 26
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IPC Class
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate 899
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect 837
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions 787
H01L 29/66 - Types of semiconductor device 624
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes 500
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NICE Class
09 - Scientific and electric apparatus and instruments 39
07 - Machines and machine tools 21
11 - Environmental control apparatus 20
12 - Land, air and water vehicles; parts of land vehicles 11
06 - Common metals and ores; objects made of metal 4
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Status
Pending 638
Registered / In Force 4,170
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1.

SEMICONDUCTOR DEVICE

      
Application Number 18516953
Status Pending
Filing Date 2023-11-22
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Ishikawa, Takamasa

Abstract

The diode portion includes: a plurality of trench portions, a drift region of a first conductivity type, an anode region of a second conductivity type provided above the drift region and having a doping concentration higher than that of a base region; and a second conductivity type region provided on the front surface of the semiconductor substrate above the anode region and having a doping concentration higher than that of the anode region, and the diode portion includes a Schottky junction region in which the anode region is provided on the front surface of the semiconductor substrate and an Ohmic junction region in which the anode region and the second conductivity type region are provided on the front surface of the semiconductor substrate.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/872 - Schottky diodes

2.

CONTROL CIRCUIT AND POWER FACTOR CORRECTION CIRCUIT

      
Application Number 18453925
Status Pending
Filing Date 2023-08-22
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Shiroyama, Hironobu

Abstract

A control circuit for a circuit that has a rectifier circuit including first to fourth diodes, and first to fourth switches respectively connected in parallel with the first to fourth diodes, for rectifying an AC voltage; and a capacitor receiving the rectified AC voltage. The control circuit controls the first to fourth switches, and includes: a determination unit determining an off-period in which, when the AC voltage is applied, the first to fourth diodes turn off, the off-period including a first period and a second period, in which the first and fourth diodes, and the second and third diodes, respectively turn off; and a control unit turning on the first and fourth switches in the first period, when the second and third diodes are off, and turning on the second and third switches in the second period, when the first and fourth diodes are off.

IPC Classes  ?

  • H02M 7/219 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
  • H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters

3.

SEMICONDUCTOR MODULE

      
Application Number 18453579
Status Pending
Filing Date 2023-08-22
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Komiyama, Norihiro
  • Sasaki, Masahiro

Abstract

A semiconductor module, including: a first circuit board and a second circuit board respectively have a first switching element and a second switching element located thereon, each of the first and second switching elements having an emitter electrode; a first connecting portion and a second connecting portion respectively electrically connected to the emitter electrodes of the first and second switching elements over the first and second circuit boards; an auxiliary emitter terminal; and an auxiliary emitter wiring electrically connected to the auxiliary emitter terminal. The auxiliary emitter wiring includes: a branch point, a common wiring portion which connects the auxiliary emitter terminal and the branch point, and a first discrete wiring portion and a second discrete wiring portion which connect the branch point respectively to the first and second connecting portions, and which each have an inductance smaller than 10 percent of an inductance of the common wiring portion.

IPC Classes  ?

  • H03K 17/081 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit

4.

PHYSICAL QUANTITY OUTPUTTING CIRCUIT

      
Application Number 18453316
Status Pending
Filing Date 2023-08-22
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Matsunami, Kazuhiro

Abstract

Provided is a physical quantity outputting circuit including a first output terminal, a power supply terminal to which an external power supply voltage is input, a reference terminal to which a reference voltage is input, a power supply voltage circuit which generates an internal power supply voltage from the external power supply voltage, a first output amplifier to which a first input signal corresponding to the physical quantity sensing result is input and which outputs the first output voltage corresponding to the first input signal to the first output terminal, a first resistor connected between the power supply terminal and the first output terminal, and a second resistor connected between the first output terminal and the reference terminal. In the physical quantity outputting circuit, current that flows from the power supply voltage circuit to the first output amplifier has a constant value.

IPC Classes  ?

  • H03F 3/45 - Differential amplifiers
  • H03F 1/30 - Modifications of amplifiers to reduce influence of variations of temperature or supply voltage

5.

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 18399996
Status Pending
Filing Date 2023-12-29
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Takenaka, Kensuke
  • Harada, Shinsuke

Abstract

A method of manufacturing a silicon carbide semiconductor device includes preparing a silicon carbide semiconductor substrate of a first conductivity type; forming a first semiconductor layer of a first conductivity type at a surface of the silicon carbide semiconductor substrate, the first semiconductor layer having a first surface and a second surface opposite to each other, the second surface facing the silicon carbide semiconductor substrate; implanting ions of an inert element into a region of a surface layer of the first semiconductor layer, thereby, inducing ion implantation damage to a crystal structure of the region in which a long tail occurs, the surface layer being at the first surface of the first semiconductor layer; and implanting a dopant of a second conductivity type into the surface layer of the first semiconductor layer where the crystal structure is damaged, thereby, forming column regions of the second conductivity type.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

6.

SEMICONDUCTOR DEVICE

      
Application Number 18522852
Status Pending
Filing Date 2023-11-29
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yamaji, Masaharu

Abstract

A semiconductor device 100A includes drive chips 21[k], a control chip 41A including a plurality of terminals H including a voltage terminal Hc and power supply terminals Hb[k] and configured to control each of the drive chips 21[k], using a corresponding one of power supply voltages Vb[k] supplied to a corresponding one of the power supply terminals Hb[k], a die pad 63 for supplying control voltage Vcc to the voltage terminal Hc, wires Qb[k] each connected to a corresponding one of the power supply terminals Hb[k] and for supplying a corresponding one of the power supply voltages Vb[k] to a corresponding one of the power supply terminals Hb[k], and a semiconductor chip 30A used for bootstrap operation to generate the power supply voltages Vb[k] and including diodes the number of which is the same as the number of the power supply voltages Vb[k].

IPC Classes  ?

7.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

      
Application Number 18611728
Status Pending
Filing Date 2024-03-21
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yoshikawa, Koh

Abstract

Provided is a semiconductor device including: a semiconductor substrate which has an upper surface and a lower surface and is provided with a drift region of a first conductivity type; a transistor portion which includes a collector region of a second conductivity type in contact with the lower surface of the semiconductor substrate and an emitter region of the first conductivity type provided in contact with the upper surface of the semiconductor substrate and having a doping concentration higher than that of the drift region; and a diode portion which includes a cathode region of the first conductivity type in contact with the lower surface of the semiconductor substrate, and an avalanche breakdown voltage in the diode portion is 0.7 times or more and less than 1 time an avalanche breakdown voltage in the transistor portion.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes

8.

SEMICONDUCTOR DEVICE

      
Application Number 18515275
Status Pending
Filing Date 2023-11-21
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Mitamura, Naoki

Abstract

Provided is a semiconductor device including a transistor portion and a diode portion, where the semiconductor device including: a plurality of trench portions provided on a front surface of a semiconductor substrate; a drift region of a first conductivity type provided in the semiconductor substrate; an anode region of a second conductivity type provided above the drift region in the diode portion; a low concentration region provided above the anode region and having a doping concentration an absolute value of which is lower than that of the anode region; and a high concentration region of the second conductivity type provided above the anode region and having a doping concentration higher than that of the anode region.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/861 - Diodes

9.

SEMICONDUCTOR DEVICE

      
Application Number 18523157
Status Pending
Filing Date 2023-11-29
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yamaji, Masaharu

Abstract

A semiconductor device includes a plurality of power semiconductor elements and a control chip including a plurality of terminals including a first terminal and a plurality of second terminals and configured to control the plurality of power semiconductor elements, using power supply voltage supplied to the plurality of second terminals. The semiconductor device also includes a first conductor for supplying a predetermined control voltage to the first terminal, a plurality of first wirings individually connected to the plurality of second terminals and for supplying the power supply voltage to the plurality of the second terminals, a die pad on which the control chip is arranged, and a semiconductor chip including a diode used for bootstrap operation to generate the power supply voltage. The semiconductor chip is fixed to the die pad by an insulating material. The die pad is connected to a terminal to which a reference voltage is supplied.

IPC Classes  ?

  • H01L 23/495 - Lead-frames
  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

10.

SEMICONDUCTOR DEVICE

      
Application Number 18613121
Status Pending
Filing Date 2024-03-22
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Takahashi, Misaki
  • Harada, Yuichi
  • Yokoyama, Kouta

Abstract

Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
  • H01L 29/861 - Diodes
  • H03K 17/0814 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
  • H03K 17/567 - Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

11.

SEMICONDUCTOR MODULE, SEMICONDUCTOR DEVICE, AND VEHICLE

      
Application Number 18454994
Status Pending
Filing Date 2023-08-24
First Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Saito, Mai
  • Yoshida, Daiki

Abstract

A semiconductor module includes a circuit board having a semiconductor element mounted thereon, a lead including a first bonding portion bonded to the semiconductor element via a bonding material and a wiring portion connected to the first bonding portion, and a sealing material that seals the semiconductor element and the lead. The first bonding portion has first and second side surfaces that face each other. The wiring portion has a bent portion connected to the first bonding portion at a side of the first bonding portion at which the first side surface is located. The bent portion is bent at a border between the first bonding portion and the bent portion in a direction away from a lower surface of the first bonding portion. The border is located between the first and second side surfaces of the first bonding portion in a plan view of the lead.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

12.

SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME

      
Application Number JP2023040763
Publication Number 2024/147230
Status In Force
Filing Date 2023-11-13
Publication Date 2024-07-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Shimosawa Makoto
  • Suzawa Takaaki

Abstract

Provided is a semiconductor device comprising: a semiconductor substrate; an interlayer insulating film which is provided above the semiconductor substrate and in which a contact hole having a stepped part on the lateral wall thereof is provided; and a contact part provided to the contact hole. The contact part has a barrier layer provided on the bottom surface and on the lateral wall of the contact hole. The barrier layer has a first region in contact with the stepped part and a second region in contact with the lateral wall of the contact hole in a region different from the first region. When the film thickness of the thickest portion in the first region is denoted as T, and the film thickness of the thinnest portion in the second region is denoted as t, 0.3T≤t≤0.95T is satisfied.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/336 - Field-effect transistors with an insulated gate

13.

SEMICONDUCTOR MODULE

      
Application Number 18489028
Status Pending
Filing Date 2023-10-18
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Tsuji, Takashi

Abstract

Provided is a semiconductor module including a plurality of SiC chips electrically connected in parallel and each having a MOSFET and a parasitic transistor formed therein, and a control unit which controls switching of the MOSFET in each of the SiC chips, and for all of the plurality of SiC chips, at least in a state where the parasitic transistor is turned on, the control unit controls, to 0.9 μs or less, a turn-off time of the MOSFET corresponding.

IPC Classes  ?

  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
  • H01L 29/872 - Schottky diodes

14.

DIAGNOSTIC APPARATUS, DIAGNOSTIC SYSTEM, AND DIAGNOSTIC METHOD

      
Application Number 18492041
Status Pending
Filing Date 2023-10-23
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yukawa, Shinji

Abstract

A diagnostic apparatus acquires data for a motor that drives a door in a train carriage, in at least one of a case where the door is opened at a second speed lower than a first speed at which a passenger is to get on and off the train carriage, or a case where the door is closed at the second speed, the data relating to the driving of the door. The diagnostic apparatus diagnoses an abnormality in a traveling resistance of the door, based on the acquired data.

IPC Classes  ?

  • E05F 15/659 - Control circuits therefor
  • E05F 15/635 - Power-operated mechanisms for wings using electrical actuators using rotary electromotors for horizontally-sliding wings operated by push-pull mechanisms, e.g. flexible or rigid rack-and-pinion arrangements

15.

SEMICONDUCTOR DEVICE

      
Application Number 18606242
Status Pending
Filing Date 2024-03-15
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Sato, Tadahiko

Abstract

A semiconductor device includes a group of semiconductor elements each having a collector electrode and emitter electrode, a conductive plate electrically connected to the collector electrodes, and a case housing these. The semiconductor device further includes an OUT terminal and a P terminal respectively extending across the case so as to be disposed inside and outside the case. The OUT terminal includes an extension portion which includes a branch base portion extending across one side of the case toward the inside of the case and a pair of branch portions branching off from the branch base portion and being electrically connected to the emitter electrodes. The P terminal includes an extension portion sandwiched between the pair of branch portions, the P terminal being electrically connected to the conductive plate.

IPC Classes  ?

  • H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
  • H02M 7/537 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters

16.

SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 18491802
Status Pending
Filing Date 2023-10-23
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Baba, Masakazu

Abstract

Provided is a silicon carbide semiconductor device comprising a transistor portion and a diode portion, comprising: a semiconductor substrate; a plurality of trench portions that are provided on a front surface of the semiconductor substrate; a drift region of a first conductivity type that is provided on the semiconductor substrate; and a second conductivity type region that covers a side wall and a bottom of a trench portion in the diode portion; wherein the transistor portion and the diode portion are alternately arrayed along an extending direction of the trench portion in a mesa portion that is sandwiched between the plurality of trench portions.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form

17.

SEMICONDUCTOR DEVICE AND OVERCURRENT PROTECTION DEVICE

      
Application Number 18602638
Status Pending
Filing Date 2024-03-12
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Sato, Shigeki

Abstract

A semiconductor device, including: an output element having a gate, the output element being configured to perform switching to thereby operate a load of the semiconductor device in accordance with a drive signal applied to the gate thereof; a current monitoring element having a gate and a sense emitter, the current monitoring element being configured to monitor a current flowing through the output element; and a voltage division circuit, which is connected between the gate of the output element and the sense emitter of the current monitoring element, which divides a voltage of the drive signal applied to the gate of the output element, and which applies an obtained voltage to the gate of the current monitoring element.

IPC Classes  ?

  • G01R 31/26 - Testing of individual semiconductor devices
  • H02H 3/08 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess current

18.

SEMICONDUCTOR DEVICE AND OVERCURRENT PROTECTION DEVICE

      
Application Number 18606156
Status Pending
Filing Date 2024-03-15
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Sato, Shigeki

Abstract

A semiconductor device includes an output element configured to switch on and off based on a drive signal, so as to drive a load, a current monitoring element configured to monitor a current that flows through the output element, and a voltage control circuit that includes a first diode configured to charge a gate voltage applied to a gate of the current monitoring element and a second diode configured to discharge the gate voltage, so that the voltage control circuit controls the gate voltage. An anode of the first diode is connected to a gate of the output element and a cathode of the second diode, and a cathode of the first diode is connected to an anode of the second diode and the gate of the current monitoring element.

IPC Classes  ?

  • H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
  • H02H 3/087 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess current for dc applications

19.

SEMICONDUCTOR DEVICE AND OVERCURRENT PROTECTION DEVICE

      
Application Number 18605427
Status Pending
Filing Date 2024-03-14
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Sato, Shigeki

Abstract

A semiconductor device includes an output element configured to switch on and off according to a drive signal to drive a load, a current monitoring element configured to monitor a current flowing through the output element, and a capacitor having one end connected to a gate of the output element and another end connected to a gate of the current monitoring element. The semiconductor device further includes a current detection resistor configured to output a sense current detection signal obtained by converting a sense current output from the current monitoring element into a voltage, and an overcurrent detection circuit configured to detect an overcurrent state of the output element, by comparing the sense current detection signal with a reference voltage.

IPC Classes  ?

  • H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
  • G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof

20.

DIAGNOSTIC APPARATUS, DIAGNOSTIC SYSTEM, AND DIAGNOSTIC METHOD

      
Application Number 18492057
Status Pending
Filing Date 2023-10-23
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yukawa, Shinji

Abstract

A diagnostic apparatus includes a drive mechanism configured to open or close a door panel, and includes a fastening mechanism configured to fasten the door panel to the drive mechanism. The diagnostic apparatus includes circuitry configured to acquire first data related to an operation of a door of a train carriage, during at least one of an opening operation or a closing operation of the door, and to diagnose an abnormality in the fastening mechanism based on the acquired first data.

IPC Classes  ?

  • E05F 15/659 - Control circuits therefor
  • E05F 15/635 - Power-operated mechanisms for wings using electrical actuators using rotary electromotors for horizontally-sliding wings operated by push-pull mechanisms, e.g. flexible or rigid rack-and-pinion arrangements

21.

ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF

      
Application Number 18518096
Status Pending
Filing Date 2023-11-22
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Tada, Shinji

Abstract

An electronic device includes a first terminal having a first center portion, and a first external and internal end portions that are respectively bent at opposing ends of the first center portion to extend in first and second directions opposite to each other, a second terminal having a second center portion, and a second external and internal end portions that are respectively bent at opposing ends of the second center portion to extend in the first and second directions, an insulating sheet sandwiched by the first and second center portions, and a casing having a first resin in contact with the first and second center portions, and a second resin portion that holes the first resin portion. The first resin portion holds at least a part of the first and second terminals and the insulating sheet, with the first and second external end portions being exposed to an outside thereof.

IPC Classes  ?

  • H01L 23/495 - Lead-frames
  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

22.

SEMICONDUCTOR DEVICE HAVING CONNECTION WIRING TO WHICH WIRE IS CONNECTED

      
Application Number 18605500
Status Pending
Filing Date 2024-03-14
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kato, Ryoichi
  • Hinata, Yuichiro
  • Murata, Yuma

Abstract

A semiconductor device including: first and second conductive portions having a gap therebetween; connection wiring including first and second bonding portions respectively bonded to front surfaces of the first and second conductive portions, and a wiring portion straddling the gap and connecting the first and second bonding portions; and a wire bonded to the wiring portion. The wiring portion includes: a vertical portion extending, from a lower end to an upper end thereof, perpendicularly to the first conductive portion, the lower end being connected to the first bonding portion; a parallel portion extending in parallel to the first and second conductive portions from the upper end of the vertical portion, the parallel portion having, on a front surface thereof, a wire bonding portion to which one end of the wire is bonded; and an inclined portion extending inclinedly from the parallel portion toward the second bonding portion.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

23.

SEMICONDUCTOR DEVICE

      
Application Number 18496383
Status Pending
Filing Date 2023-10-27
First Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Araki, Ryu

Abstract

A wiring member is connected to an output electrode of a semiconductor chip and to a wiring region of a main current lead frame via an insulating spacer. In this case, a snubber capacitor is formed by the wiring member and spacer between the input electrode of a (high-side) semiconductor chip and the output electrode of a (low-side) semiconductor chip. This snubber capacitor absorbs back electromotive force produced due to the wiring inductance of the wiring member and main current lead frame.

IPC Classes  ?

  • H01L 23/495 - Lead-frames
  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,

24.

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

      
Application Number JP2023041006
Publication Number 2024/142638
Status In Force
Filing Date 2023-11-14
Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Nishimura, Takeyoshi

Abstract

According to the present invention, a front surface electrode (14) forms an ohmic contact with a semiconductor substrate (8) by the intermediary of a contact structure which is composed of a TiSix film (11), a TiN film (12) and a metal plug (13). The TiSix film (11) is directly deposited by sputtering so as to extend from a lateral wall of a contact hole (9a) (a lateral surface of an interlayer insulating film (9)) along the inner wall of a source contact trench (8a). An end part of the TiSix film (11) ends on the lateral surface of the interlayer insulating film (9). The TiSix film (11) has a uniform thickness from the lateral wall of the contact hole (9a) to the lateral wall of the source contact trench (8a). The TiN film (12) is provided along the surface of the TiSix film (11). The metal plug (13) is buried in the contact hole (9a) and the source contact trench (8a) so as to be positioned above the TiN film (12). Consequently, the reliability of a semiconductor device (10) is improved.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
  • H01L 21/263 - Bombardment with wave or particle radiation with high-energy radiation
  • H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
  • H01L 21/336 - Field-effect transistors with an insulated gate
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
  • H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

25.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD

      
Application Number JP2023047275
Publication Number 2024/143541
Status In Force
Filing Date 2023-12-28
Publication Date 2024-07-04
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Yamauchi Kohei
  • Mochizuki Eiji
  • Nishizawa Tatsuo
  • Iwata Hideki
  • Nishimura Yoshitaka
  • Gekinozu Masakazu
  • Kiguchi Ryoga

Abstract

Provided are: a semiconductor device comprising a switching element in which a first main electrode plate, a second main electrode plate, and a control electrode plate are provided on one surface, a first main electrode is connected to the first main electrode plate, a second main electrode is connected to the second main electrode plate, and a control electrode is connected to the control electrode plate; and a semiconductor module comprising the semiconductor device.

IPC Classes  ?

  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
  • H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
  • H01L 23/40 - Mountings or securing means for detachable cooling or heating arrangements
  • H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

26.

DIAGNOSTIC APPARATUS, DIAGNOSTIC SYSTEM, AND DIAGNOSTIC METHOD

      
Document Number 03217722
Status Pending
Filing Date 2023-10-25
Open to Public Date 2024-06-28
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yukawa, Shinji

Abstract

A diagnostic apparatus acquires data for a motor that drives a door in a train carriage, in at least one of a case where the door is opened at a second speed lower than a first speed at which a passenger is to get on and off the train carriage, or a case where the door is closed at the second speed, the data relating to the driving of the door. The diagnostic apparatus diagnoses an abnormality in a traveling resistance of the door, based on the acquired data.

IPC Classes  ?

  • E05F 15/40 - Safety devices, e.g. detection of obstructions or end positions
  • E05F 15/42 - Detection using safety edges
  • G01M 17/08 - Railway vehicles

27.

DIAGNOSTIC APPARATUS, DIAGNOSTIC SYSTEM, AND DIAGNOSTIC METHOD

      
Document Number 03217732
Status Pending
Filing Date 2023-10-25
Open to Public Date 2024-06-28
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yukawa, Shinji

Abstract

A diagnostic apparatus includes a drive mechanism configured to open or close a door panel, and includes a fastening mechanism configured to fasten the door panel to the drive mechanism. The diagnostic apparatus includes circuitry configured to acquire first data related to an operation of a door of a train carriage, during at least one of an opening operation or a closing operation of the door, and to diagnose an abnormality in the fastening mechanism based on the acquired first data.

IPC Classes  ?

  • B61D 19/02 - Door arrangements specially adapted for rail vehicles for carriages
  • E05B 77/14 - Specially controlled locking actions in case of open doors or in case of doors moved from an open to a closed position, e.g. lock-out prevention or self-cancelling
  • E05F 15/40 - Safety devices, e.g. detection of obstructions or end positions

28.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 18427607
Status Pending
Filing Date 2024-01-30
First Publication Date 2024-06-27
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Moriya, Tomohiro
  • Kinoshita, Akimasa

Abstract

A p-type impurity concentration profile in a depth direction of a p-type base region is adjusted by two or more stages of ion implantation to the p-type base region. The two or more stages of ion implantation are each set to have a mutually different acceleration voltage and a dose amount that is lower the higher is the acceleration voltage. The p-type impurity concentration profile is asymmetrical about a depth position of a highest impurity concentration and the impurity concentration decreases from this depth position in a direction to n+-type source regions and in a direction to an n+-type drain region. In the p-type impurity concentration profile, the impurity concentration decreases, forming a step at one or more different depth positions closer to the n+-type drain region than is the depth position of the highest impurity.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched

29.

CLAMP-ON TYPE ULTRASONIC FLOWMETER

      
Application Number 18497327
Status Pending
Filing Date 2023-10-30
First Publication Date 2024-06-27
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Yamashita, Shiori
  • Shibasaki, Takuya

Abstract

A clamp-on type ultrasonic flowmeter that uses ultrasonic waves for measuring a flow rate of a fluid flowing inside a piping, incudes: an ultrasonic transducer having a wedge on which piezoelectric device is attached. A clamp-on type ultrasonic flowmeter that uses ultrasonic waves for measuring a flow rate of a fluid flowing inside a piping, incudes: an ultrasonic transducer having a wedge on which piezoelectric device is attached. Further, the wedge of the ultrasonic transducer has a positioning recess portion formed on a tilted surface of the wedge, and the positioning recess portion defines a position of the piezoelectric device with respect to the wedge of the ultrasonic transducer when the piezoelectric device is attached thereto.

IPC Classes  ?

  • G01F 1/66 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by measuring frequency, phase shift or propagation time of electromagnetic or other waves, e.g. using ultrasonic flowmeters
  • G01F 1/667 - Arrangements of transducers for ultrasonic flowmeters; Circuits for operating ultrasonic flowmeters

30.

CLAMP-ON TYPE ULTRASONIC FLOWMETER

      
Application Number 18497385
Status Pending
Filing Date 2023-10-30
First Publication Date 2024-06-27
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Yamashita, Shiori
  • Shibasaki, Takuya

Abstract

A clamp-on type ultrasonic flowmeter that uses ultrasonic waves for measuring a flow rate of a fluid flowing inside a piping, includes an acoustic coupler rubber with a flat-plate structure, which is attached to an ultrasonic transmission-reception surface of an ultrasonic transducer that transmits ultrasonic waves to and receives ultrasonic waves from the piping.

IPC Classes  ?

  • G01F 1/66 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by measuring frequency, phase shift or propagation time of electromagnetic or other waves, e.g. using ultrasonic flowmeters
  • G01F 1/667 - Arrangements of transducers for ultrasonic flowmeters; Circuits for operating ultrasonic flowmeters

31.

SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 18497333
Status Pending
Filing Date 2023-10-30
First Publication Date 2024-06-27
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Narita, Syunki
  • Harada, Shinsuke

Abstract

In an active region and an edge termination region, a drift layer is constituted by a same SJ structure with a parallel pn layer. In the edge termination region, a p+-type extension portion between the active region and a JTE structure fixes the JTE structure to the potential of a source electrode. The p+-type extension portion is between and in contact with a p-type base extension portion and the parallel pn layer. The p+-type extension portion is an extension of upper portions of p+-type regions provided in the active region to mitigate electric field near bottoms of gate trenches. Between the p-type base extension portion and the parallel pn layer is free of the lower portions of the p+-type regions. Thus, a length in the depth direction of the p-type column regions of the edge termination region is longer than that of the p-type column regions of the active region.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

32.

CLAMP-ON TYPE ULTRASONIC FLOWMETER

      
Application Number 18497434
Status Pending
Filing Date 2023-10-30
First Publication Date 2024-06-27
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Yamashita, Shiori
  • Shibasaki, Takuya

Abstract

A clamp-on type ultrasonic transducer that uses ultrasonic waves for measuring a flow rate of a fluid flowing inside a piping, the clamp-on type ultrasonic transducer including a temperature measuring unit that abuts against the piping and measures a temperature of the fluid via the piping. Further, an elastic member is provided between a device main body and an upper end of the temperature measuring unit, and when the piping is clamped, while a piping contacting surface of the temperature measuring unit is pressed to the piping, a lower surface of the temperature measuring unit abuts against the piping.

IPC Classes  ?

  • G01F 1/667 - Arrangements of transducers for ultrasonic flowmeters; Circuits for operating ultrasonic flowmeters

33.

POWER SUPPLY CIRCUIT AND DEVICE

      
Application Number JP2022047333
Publication Number 2024/134825
Status In Force
Filing Date 2022-12-22
Publication Date 2024-06-27
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kishiro, Masami

Abstract

A power supply circuit (100) has: an input terminal (PVi) to which an input voltage (Vin) is supplied; an inductor (L100); a switching circuit (120) that is electrically connected to the inductor and switches between a storage period in which energy is stored in the inductor and a discharge period in which the energy stored in the inductor is discharged; an output terminal (PVo) that is supplied with current from the inductor during the storage period and the discharge period; and a transistor (FT1) that is electrically connected to the inductor and becomes part of the path of current flowing through the inductor during the storage period and the discharge period. The output terminal outputs a voltage (Vout) based on the storage period, the discharge period, and the input voltage. The transistor suppresses the current flowing through the inductor during a signal processing period in which a signal processing circuit processes a signal, thereby stopping a switching operation in which the storage period and the discharge period are switched.

IPC Classes  ?

  • H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

34.

ULTRASONIC FLOWMETER, AND MEASURING METHOD

      
Application Number JP2022047760
Publication Number 2024/134908
Status In Force
Filing Date 2022-12-23
Publication Date 2024-06-27
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yamada, Kazuyuki

Abstract

This ultrasonic flowmeter comprises: a time measuring unit for measuring a plurality of propagation times from a time point at which transmission of ultrasonic waves starts until each crossing time point at which a received signal of the ultrasonic wave crosses a reference level after the received signal has crossed a threshold voltage; and a flow rate measuring unit for extracting a specific propagation time, of which a difference from a reference propagation time lies within a first prescribed range, from among the plurality of propagation times, and using the specific propagation time to calculate a flow rate of a fluid through which the ultrasonic waves propagate.

IPC Classes  ?

  • G01F 1/66 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by measuring frequency, phase shift or propagation time of electromagnetic or other waves, e.g. using ultrasonic flowmeters

35.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

      
Application Number JP2023039556
Publication Number 2024/135114
Status In Force
Filing Date 2023-11-02
Publication Date 2024-06-27
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yoshida Soichi

Abstract

Provided is a semiconductor device comprising: a semiconductor substrate having an active part on which a transistor section is provided; an emitter electrode provided above the front surface of the semiconductor substrate; and a protective film provided above the emitter electrode. The active part is provided with a first electrically conductive-type emitter region provided on the front surface of the semiconductor substrate, a second electrically conductive-type contact region, and a plurality of trench parts. The emitter electrode has an exposed part that is not covered by the protective film. In the region in which the exposed part is provided, the active part has a first region, and a second region that is provided in the outer periphery of the first region and has a lower channel density than the first region.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
  • H01L 29/861 - Diodes
  • H01L 29/868 - PIN diodes

36.

ENCODER

      
Application Number JP2023045356
Publication Number 2024/135632
Status In Force
Filing Date 2023-12-18
Publication Date 2024-06-27
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Morita, Akira

Abstract

This encoder comprises: a magnet attached to a measurement target object of which a rotational position is to be measured; an electric power generating element which utilizes the Barkhausen effect to convert magnetic energy of the magnet into an electric pulse; a magnetic sensor for measuring a magnetic polarity of the magnet; an estimating unit for estimating a rotation count and the rotational position of the measurement target object on the basis of an electric power generation polarity of the electric power generating element, the magnetic polarity of the magnetic sensor, and the immediately previous estimated rotational position; and a non-volatile storage unit for storing the rotation count and the rotational position estimated by the estimating unit.

IPC Classes  ?

  • G01D 5/245 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means generating pulses or pulse trains using a variable number of pulses in a train

37.

Drive circuit of switching element and intelligent power module

      
Application Number 18160358
Grant Number 12021511
Status In Force
Filing Date 2023-01-27
First Publication Date 2024-06-25
Grant Date 2024-06-25
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Fujii, Masanari

Abstract

There is provided a drive circuit of a switching element and an intelligent power module both capable of preventing deterioration of a switching loss of the switching element. A gate drive circuit includes a first current supply section which supplies a first current to a gate terminal provided in an IGBT when a gate voltage of the gate terminal is lower than a first voltage, a second current supply section which supplies a second current smaller than the first current to the gate terminal when the gate voltage of the gate terminal is higher than a second voltage which is the same as or higher than the first voltage, and a third current supply section which supplies a third current smaller than the first current and larger than the second current to the gate terminal when the gate voltage of the gate terminal is lower than a third voltage lower than the first voltage.

IPC Classes  ?

  • H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
  • H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
  • H03K 17/567 - Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

38.

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 18497450
Status Pending
Filing Date 2023-10-30
First Publication Date 2024-06-20
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Takenaka, Kensuke
  • Tawara, Takeshi
  • Harada, Shinsuke

Abstract

A silicon carbide semiconductor substrate has a silicon carbide semiconductor substrate of a first conductivity type and a first semiconductor layer of the first conductivity type, provided at a front surface of the silicon carbide semiconductor substrate and having a doping concentration lower than that of the silicon carbide semiconductor substrate. A portion of the first semiconductor layer contains a dopant of a second conductivity type. A concentration of the dopant of the second conductivity type in the first semiconductor layer differs in a direction parallel to an orientation flat or in a direction orthogonal to the orientation flat, the orientation flat indicating a crystal axis direction, such that a distribution of a net doping concentration in the first semiconductor layer has a variation equal to or less than a predetermined threshold.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

39.

METAL WIRING BOARD

      
Application Number 18590567
Status Pending
Filing Date 2024-02-28
First Publication Date 2024-06-20
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Sato, Yushi
  • Enomoto, Kazuo

Abstract

A metal wiring for connecting a semiconductor element and to a circuit board, includes: a first joining portion having a rectangular shape in a planar view and configured to be joined to an upper surface of a main electrode of the semiconductor element; a second joining portion having a rectangular shape in the planar view and joined to an upper surface of the circuit board; and a coupling portion having first and second joining sides, respectively connected to coupling sides of the first and second joining portions so as to couple the first and second joining portions such that the coupling sides of the first and second joining portions face each other. The first joining side of the coupling portion is coupled to the coupling side of the first joining portion approximately at a center thereof in a first direction parallel to the coupling side of the first joining portion.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

40.

METHOD FOR SELECTING SCALE DISPERSANT

      
Application Number 18592705
Status Pending
Filing Date 2024-03-01
First Publication Date 2024-06-20
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Wada, Azusa
  • Ui, Shinya
  • Yamamoto, Hideki

Abstract

A method for selecting a scale dispersant compatible with characteristics of a target water and scale is deposited. A method for selecting a scale dispersant, comprising steps of obtaining a coordinate Cs of an intrinsic physical property value, based on Hansen solubility, of a target scale; a step of obtaining a coordinate Cw of an intrinsic physical property value, based on Hansen solubility, of a target water; and selecting a scale dispersant based on a positional relationship between the coordinate Cs of the intrinsic physical property value of the target scale and the coordinate Cw of the intrinsic physical property value of the target water.

IPC Classes  ?

  • C09K 8/528 - Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning inorganic depositions, e.g. sulfates or carbonates

41.

COMMERCIAL ITEM STORAGE DEVICE

      
Application Number JP2023038702
Publication Number 2024/127826
Status In Force
Filing Date 2023-10-26
Publication Date 2024-06-20
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Iwako, Tsutomu
  • Takei, Toshiki

Abstract

The present invention comprises: a box-shaped device body 21 that has a commercial item storage passage 26 in the interior thereof; and a convey-out mechanism 30 that stores a commercial item or items along the commercial item storage passage 26, and when performing convey-out driving, dispenses the furthest downstream commercial item from a dispensing opening 212. The convey-out mechanism 30 comprises a first spiral 31 that is positioned so as to be able to rotate around the center axis thereof in the commercial item storage passage 26, and is configured wound in a helical shape following along the extension direction of the commercial item storage passage 26, and a second spiral 34 that is positioned so as to be able to rotate around the center axis thereof, and is configured wound in a helical shape at a pitch interval equal to that of the first spiral 31 and at a smaller diameter than the diameter of the first spiral 31, in the interior of the first spiral 31. When the first spiral 31 and the second spiral 34 rotate synchronously, any commercial items that are held in the pitch intervals of the first spiral 31 and/or the second spiral 34 are conveyed out toward the dispensing opening 212, and the furthest downstream commercial item is dispensed from the dispensing opening 212.

IPC Classes  ?

42.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number JP2023043492
Publication Number 2024/128072
Status In Force
Filing Date 2023-12-05
Publication Date 2024-06-20
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Ooshima Yuusuke
  • Yoshimura Takashi
  • Takishita Hiroshi
  • Yaguchi Shuntaro
  • Tsuji Hidenori

Abstract

Provided is a semiconductor device comprising a semiconductor substrate having an upper surface and a lower surface. The semiconductor substrate has, in a depth direction, one or more hydrogen peaks, which are hydrogen chemical concentration peaks. The one or more hydrogen peaks include a deepest peak which is farthest from the lower surface of the semiconductor substrate. The semiconductor substrate has a lower region extending from the lower surface to the deepest peak, and an upper region extending from the deepest peak to the upper surface. For at least one of a carbon chemical concentration and an oxygen chemical concentration, the concentration in the lower region is two or more times the concentration in the upper region.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/336 - Field-effect transistors with an insulated gate

43.

SEMICONDUCTOR MODULE

      
Application Number 18592387
Status Pending
Filing Date 2024-02-29
First Publication Date 2024-06-20
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Sato, Yushi
  • Enomoto, Kazuo

Abstract

A semiconductor module includes: first to third circuit boards respectively connected to first to third terminals; first and second semiconductor elements respectively on the first and second circuit boards; first and second metal wiring boards respectively connecting the first semiconductor element to the second circuit board and the second semiconductor element to the third circuit board. The first metal wiring board includes first and second joining portions and a first coupling portion coupling the first and second joining portions at respective one sides thereof such that the respective one sides of the first and second joining portions face each other. The second metal wiring board includes third and fourth joining portions and a second coupling portion coupling the third and fourth joining portions at respective one sides thereof such that the respective one sides of the third and fourth joining portions face each other.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

44.

SILICON CARBIDE MOSFET INVERTER CIRCUIT AND METHOD FOR CONTROLLING SILICON CARBIDE MOSFET INVERTER CIRCUIT

      
Application Number JP2023038187
Publication Number 2024/127817
Status In Force
Filing Date 2023-10-23
Publication Date 2024-06-20
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Utsumi Makoto

Abstract

Provided is a silicon carbide MOSFET inverter circuit in which a first and a second silicon carbide MOSFET are connected in series, wherein, the current density of the transient current is less than 1000 A/cm2 during the period when the MOSFET to be controlled is turned off, and the gate of the MOSFET to be controlled is turned on during the turned off period so that the saturation current period is less than 5 µs. Provided is a method for controlling the silicon carbide MOSFET inverter circuit in which the first and the second silicon carbide MOSFETs are connected, wherein the method for controlling the silicon carbide MOSFET inverter circuit comprises a step for turning off the MOSFET to be controlled, and a step for turning on the gate of the MOSFET to be controlled so that during the turned off period of the MOSFET to be controlled, the saturation current period is less than 5 µs, the current density of the transient current being less than 1000 A/cm2 in the turned off period.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed

45.

SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 18492118
Status Pending
Filing Date 2023-10-23
First Publication Date 2024-06-13
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Ohse, Naoyuki

Abstract

A silicon carbide semiconductor device includes: a drift layer of a first conductivity-type, a base region of a second conductivity-type, and a main region of the first conductivity-type each including silicon carbide; a gate insulating film and a gate electrode buried inside a trench penetrating the main region and the base region; and a main electrode provided in contact with the main region, wherein the main region includes a source expansion part with a bottom surface in contact with the base region, and a source contact part having a 3C structure provided on a top surface side of the source expansion part so as to be in contact with the main electrode, and a top surface of the gate electrode is deeper than a bottom surface of the source contact part and is shallower than a bottom surface of the source expansion part.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

46.

SEMICONDUCTOR DEVICE

      
Application Number 18492783
Status Pending
Filing Date 2023-10-24
First Publication Date 2024-06-13
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kobayashi, Takayuki

Abstract

Provided is a semiconductor device comprising a transistor portion and a diode portion, wherein the diode portion includes: a plurality of trench portions provided in a semiconductor substrate; a drift region of a first conductivity type provided in the semiconductor substrate; an anode region of a second conductivity type provided above the drift region; a second contact region of the second conductivity type provided in a front surface of the semiconductor substrate above the anode region and having a higher doping concentration than the anode region; and a carrier stop region of the first conductivity type provided below the second contact region and having a higher doping concentration than the drift region, wherein carrier stop regions including the carrier stop region are discretely provided in a trench extending direction.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

47.

UNINTERRUPTIBLE POWER SUPPLY DEVICE AND CONTROL MODULE FOR UNINTERRUPTIBLE POWER SUPPLY DEVICE

      
Application Number 18078464
Status Pending
Filing Date 2022-12-09
First Publication Date 2024-06-13
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kinuta, Takahiro

Abstract

In an uninterruptible power supply device, a control module includes a thyristor unit, a control unit, and a housing that accommodates the thyristor unit and the control unit, in which the thyristor unit and the control unit are arranged in a front-rear direction intersecting a left-right direction in the housing of the control module.

IPC Classes  ?

  • H02J 9/06 - Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over
  • H01L 29/74 - Thyristor-type devices, e.g. having four-zone regenerative action
  • H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries

48.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number JP2023043470
Publication Number 2024/122541
Status In Force
Filing Date 2023-12-05
Publication Date 2024-06-13
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Tsuji Hidenori
  • Takashima Shinya
  • Ueno Katsunori
  • Yoshimura Takashi
  • Yaguchi Shuntaro

Abstract

Provided is a semiconductor device comprising a semiconductor substrate having a chemical oxygen concentration of at least 1×1016 atoms/cm3. The semiconductor device comprises a buffer region of a first conductivity type that includes bulk donors and increase donors and that has a higher doping concentration than a drift region. For over the entirety of a first range from the lower edge to the deepest peak of the buffer region, the concentration of thermal donors is 10% or lower of the concentration of the increase donors at the same depth position.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
  • H01L 21/336 - Field-effect transistors with an insulated gate
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes
  • H01L 29/868 - PIN diodes

49.

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 18491808
Status Pending
Filing Date 2023-10-23
First Publication Date 2024-06-13
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Baba, Masakazu

Abstract

Provided is a silicon carbide semiconductor device comprising: a plurality of trench portions provided on a front surface of a semiconductor substrate; a drift region of a first conductivity-type provided on the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a source region of the first conductivity-type provided above the drift region and having a higher doping concentration than the drift region; a contact region of the second conductivity type provided above the drift region and having a higher doping concentration than the base region; and a second conductivity type region provided below the source region and above a lower end of the base region and having a higher doping concentration than the base region, wherein the second conductivity type region is provided to be in contact with a side wall of the plurality of trench portions.

IPC Classes  ?

  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

50.

SEMICONDUCTOR DEVICE

      
Application Number 18582651
Status Pending
Filing Date 2024-02-21
First Publication Date 2024-06-13
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Shoji, Atsushi
  • Kubouchi, Motoyoshi

Abstract

Provided is a semiconductor device including: a semiconductor substrate having a base region of a second conductivity type provided between a drift region and an upper surface of the semiconductor substrate; a first lifetime region arranged in the drift region on a lower surface side of the semiconductor substrate relative to the base region; and a second lifetime region which is arranged to be sandwiched between first lifetime regions including the first lifetime region in a first direction parallel to the upper surface of the semiconductor substrate and in which a carrier lifetime is longer than in the first lifetime region, where a width of the second lifetime region in the first direction is 0.2 times or more a thickness of the first lifetime region in a second direction perpendicular to the upper surface of the semiconductor substrate.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions

51.

SEMICONDUCTOR DEVICE

      
Application Number 18441507
Status Pending
Filing Date 2024-02-14
First Publication Date 2024-06-06
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Inokuchi, Hisato

Abstract

A semiconductor device with front and back surfaces, and a side surface having first and second sides opposite to each other, and third and fourth sides opposite to each other. The semiconductor device includes a plurality of circuit boards surrounded by the first to fourth sides, the circuit boards each including an insulating board and a conductive plate, a first lead frame including a first terminal portion extending upward and being bent toward the first side, a second lead frame including a second terminal portion extending upward and being bent toward the second side, and a resin-filled portion provided in a first gap between the first terminal portion and the second terminal portion, the resin-filled portion having a concave portion recessed in a direction from the front surface toward the back surface so that an insulating insertion member is inserted into the concave portion.

IPC Classes  ?

52.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

      
Application Number 18437199
Status Pending
Filing Date 2024-02-08
First Publication Date 2024-06-06
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Agata, Yasunori

Abstract

Provided is a semiconductor device which includes a semiconductor substrate that has an upper surface and a lower surface and includes a bulk donor. A hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction has a first hydrogen concentration peak and a second hydrogen concentration peak disposed between the lower surface of the semiconductor substrate and the first hydrogen concentration peak. An intermediate region including an intermediate donor concentration is provided between the first hydrogen concentration peak and the second hydrogen concentration peak.

IPC Classes  ?

  • H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
  • H01L 21/263 - Bombardment with wave or particle radiation with high-energy radiation
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes

53.

INTEGRATED CIRCUIT AND POWER SUPPLY CIRCUIT

      
Application Number 18493156
Status Pending
Filing Date 2023-10-24
First Publication Date 2024-06-06
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Yamane, Hiroki
  • Matsumoto, Shinji

Abstract

An integrated circuit for a power supply circuit generating an output voltage of a target level from an input voltage. The integrated circuit includes: a first oscillator circuit configured to output a first oscillator signal having a first frequency corresponding to the output voltage; a second oscillator circuit configured to output a second oscillator signal having a predetermined second frequency; and a driver circuit configured to drive a transistor of the power supply circuit, in response to the first oscillator signal, after the target level of the output voltage is changed to a first level, and drive the first transistor in response to the second oscillator signal, after the target level is changed to a second level lower than the first level, and a control circuit configured to stop an operation of the first oscillator circuit, after the target level is changed to the second level.

IPC Classes  ?

  • H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
  • H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
  • H02M 7/217 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

54.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 18495467
Status Pending
Filing Date 2023-10-26
First Publication Date 2024-06-06
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Niimura, Yasushi
  • Yamaguchi, Kazuya

Abstract

A semiconductor device has a semiconductor substrate of a first semiconductor type; a drift layer of the first semiconductor type; a base layer of a second conductivity type; an active region through which a main current flows and having source regions of the first semiconductor type, trenches, gate insulating films, and gate electrodes; and a termination region surrounding a periphery of the active region. The termination region has a conductive film electrically connected to the gate electrode, a field oxide film that insulates the conductive film from the drift layer, and a contact hole that penetrates through the conductive film and reaches the field oxide film. The contact hole is embedded in the field oxide film such that a thickness of the field oxide film below the contact hole has is 54 nm to 85 nm thinner than a thickness of the field oxide film outside the contact hole.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/66 - Types of semiconductor device

55.

SEMICONDUCTOR MODULE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 18428381
Status Pending
Filing Date 2024-01-31
First Publication Date 2024-05-30
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Enomoto, Kazuo

Abstract

A semiconductor module a metal base plate having a semiconductor unit including a semiconductor element, the metal base plate having an upper surface and a bottom surface opposite to each other and the semiconductor element being mounted on the upper surface, and a case surrounding a periphery of the semiconductor unit and being bonded to the upper surface of the metal base plate. The case includes a first positioning portion formed by a protrusion protruding a bottom of the case toward the metal base plate, and a second positioning portion formed by a hole or a cutout so as to at least partially overlap with the first positioning portion in a plan view of the semiconductor module. The metal base plate includes a first engagement portion formed by a hole or a cutout with which the first positioning portion is engageable.

IPC Classes  ?

  • H01L 23/049 - Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
  • H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
  • H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

56.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 18475008
Status Pending
Filing Date 2023-09-26
First Publication Date 2024-05-30
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Suzawa, Takaaki
  • Endou, Makoto
  • Shimosawa, Makoto

Abstract

A semiconductor device, having: a substrate having a main surface with a recess; a device structure at the main surface; an interlayer insulating film covering the device structure; a contact hole penetrating through the interlayer insulating film to expose a portion of the device structure, the contact hole having a bottom configured by the recess; a barrier metal, including a titanium film provided along the side wall of the contact hole, and a titanium nitride film stacked on the titanium film and formed at the bottom of the contact hole; a titanium silicide film provided along an inner wall of the recess; a tungsten film provided on the barrier metal; and a metal electrode provided on the interlayer insulating film and the tungsten film. An upper surface of the titanium nitride film on the bottom of the contact hole is closer to the metal electrode than is the main surface.

IPC Classes  ?

  • H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
  • H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
  • H01L 29/40 - Electrodes
  • H01L 29/45 - Ohmic electrodes
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect

57.

ELECTROPHOTOGRAPHIC PHOTORECEPTOR, METHOD FOR MANUFACTURING SAME, AND ELECTROPHOTOGRAPHIC APPARATUS

      
Application Number 18477545
Status Pending
Filing Date 2023-09-28
First Publication Date 2024-05-30
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kitagawa, Seizo
  • Okura, Kenichi

Abstract

A highly sensitive and highly durable positive charging multilayer electrophotographic photoreceptor includes: a conductive substrate; a charge transport layer containing at least a first hole transport material and a first resin binder; and a charge generation layer containing at least a second hole transport material, an electron transport material, a charge generation material, and a second resin binder, the charge transport layer and the charge generation layer being sequentially laminated on the conductive substrate. The charge transport layer contains a compound represented by General Formula (AD1) below, A highly sensitive and highly durable positive charging multilayer electrophotographic photoreceptor includes: a conductive substrate; a charge transport layer containing at least a first hole transport material and a first resin binder; and a charge generation layer containing at least a second hole transport material, an electron transport material, a charge generation material, and a second resin binder, the charge transport layer and the charge generation layer being sequentially laminated on the conductive substrate. The charge transport layer contains a compound represented by General Formula (AD1) below, A highly sensitive and highly durable positive charging multilayer electrophotographic photoreceptor includes: a conductive substrate; a charge transport layer containing at least a first hole transport material and a first resin binder; and a charge generation layer containing at least a second hole transport material, an electron transport material, a charge generation material, and a second resin binder, the charge transport layer and the charge generation layer being sequentially laminated on the conductive substrate. The charge transport layer contains a compound represented by General Formula (AD1) below, The electrophotographic photoreceptor can be applied to a positive charging electrophotographic apparatus having a high resolution and a high speed, having excellent operational stability, causing no image defects resulting from cracking caused by the adhesion of a contaminant component, having less deterioration of the electrical characteristics by ozone, causing no image defects resulting from creep deformation, and stably providing high image quality, a method for manufacturing the same, and an electrophotographic apparatus using the same.

IPC Classes  ?

  • G03G 5/047 - Photoconductive layers characterised by having two or more layers or characterised by their composite structure characterised by the charge-generation layers or charge-transporting layers
  • G03G 5/06 - Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic

58.

ELECTRONIC DEVICE AND ELECTRONIC DEVICE MANUFACTURING METHOD

      
Application Number 18474940
Status Pending
Filing Date 2023-09-26
First Publication Date 2024-05-30
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Hori, Motohito
  • Ikeda, Yoshinari

Abstract

A positive electrode circuit pattern layer and a negative electrode circuit pattern layer each have a terminal region extending in a long-side direction of a rectangular insulating plate. Thicknesses of a positive electrode bonding region of a positive electrode terminal and a negative electrode bonding region of a negative electrode terminal are respectively less than thicknesses of the terminal regions of the positive electrode circuit pattern layer and the negative electrode circuit pattern layer. The lengths in the long-side direction of the positive electrode bonding region of the positive electrode terminal and the negative electrode bonding region of the negative electrode terminal are respectively greater than or equal to half the lengths in the long-side direction of the terminal regions of the positive electrode circuit pattern layer and negative electrode circuit pattern layer.

IPC Classes  ?

  • H01L 23/498 - Leads on insulating substrates
  • H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups

59.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

      
Application Number 18473431
Status Pending
Filing Date 2023-09-25
First Publication Date 2024-05-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Okumura, Keiji

Abstract

A semiconductor device includes: a drift layer; a base region provided on the drift layer; a main region provided on the drift layer; a gate electrode provided on the drift layer and buried in a gate trench extending in one direction across both ends of an active part with a gate insulating film interposed; a gate runner provided on an outer circumferential side of the active part so as to be electrically connected to the gate electrode; a gate pad provided on an inner side of the gate runner; and a resistance layer provided on the drift layer and buried in a trench for resistance extending in the one direction across the both ends of the active part with an insulating film interposed so as to be electrically connected between the gate pad and the gate runner.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/66 - Types of semiconductor device

60.

SEMICONDUCTOR DEVICE

      
Application Number 18477619
Status Pending
Filing Date 2023-09-29
First Publication Date 2024-05-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Uchida, Takafumi

Abstract

A semiconductor device includes an active region as a region through which main current flows, an active region perimeter that surrounds the active region, and an edge termination region that surrounds the active region perimeter. The active region perimeter includes: a semiconductor substrate; a drift layer of a first conductivity type; a base region of a second conductivity type provided on an upper surface side of the drift layer; a source region of a first conductivity type selectively provided on an upper surface side of the base region; a perimeter trench including a contact region of the second conductivity type selectively provided, having at least a sidewall on the active region side in contact with the source region, and provided to pass through the base region; and a source ring region provided to be in contact with the contact region.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched

61.

SEMICONDUCTOR DEVICE

      
Application Number 18473462
Status Pending
Filing Date 2023-09-25
First Publication Date 2024-05-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Fukuda, Taisuke

Abstract

A semiconductor device includes: a first semiconductor chip and a second semiconductor chip each including a first main electrode on a bottom surface side and a second main electrode on a top surface side; a conductive member provided to electrically connect the first main electrode of the first semiconductor chip to the second main electrode of the second semiconductor chip; a first external terminal electrically connected to the second main electrode of the first semiconductor chip and partly opposed to the conductive member, and a resin member provided to be at least partly arranged between the conductive member and the first external terminal.

IPC Classes  ?

  • H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 23/495 - Lead-frames

62.

SEMICONDUCTOR DEVICE

      
Application Number 18495043
Status Pending
Filing Date 2023-10-26
First Publication Date 2024-05-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Matsuzawa, Kensuke
  • Fukuda, Taisuke

Abstract

A semiconductor device includes: a conductive substrate; a plurality of semiconductor chips each having a first main electrode on a bottom surface side and a second main electrode on a top surface side, the plural semiconductor chips being arranged to form a first column and a second column connected parallel to each other on the conductive substrate; and a control wiring substrate including an insulating layer, a plurality of top-surface conductive layers provided on a top surface of the insulating layer, and a plurality of bottom-surface conductive layers each having a narrower width than the insulating layer and provided on a bottom surface of the insulating layer, the bottom-surface conductive layers being arranged on the conductive substrate between the first column and the second column of the semiconductor chips.

IPC Classes  ?

  • H01L 23/495 - Lead-frames
  • H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation

63.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

      
Application Number 18418362
Status Pending
Filing Date 2024-01-22
First Publication Date 2024-05-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Agata, Yasunori
  • Yoshimura, Takashi

Abstract

Provided is a semiconductor device comprising: a drift region of a first conductivity type which is provided in a semiconductor substrate having a front surface and a back surface; and a back surface side region of the first conductivity type or a second conductivity type which is provided on a back surface side of the semiconductor substrate relative to the drift region in the semiconductor substrate and has a higher atomic density than the drift region.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
  • H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes

64.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

      
Application Number 18423344
Status Pending
Filing Date 2024-01-26
First Publication Date 2024-05-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Tamura, Takahiro
  • Onozawa, Yuichi

Abstract

Provided is a manufacturing method for a semiconductor device including a transistor portion and a diode portion. The manufacturing method includes forming, on an upper surface of a semiconductor substrate including a bulk donor, an emitter region of the transistor portion and an anode region of the diode portion as an active region, performing ion implantation of a first dopant of a first conductivity type to the transistor portion and the diode portion from a lower surface of the semiconductor substrate, and performing ion implantation of a second dopant of the first conductivity type to the transistor portion from the lower surface of the semiconductor substrate.

IPC Classes  ?

  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

65.

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

      
Application Number 18472175
Status Pending
Filing Date 2023-09-21
First Publication Date 2024-05-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Takishita, Hiroshi
  • Ooshima, Yuusuke
  • Yoshimura, Takashi
  • Yaguchi, Shuntaro

Abstract

A manufacturing method of a semiconductor device including a buffer region in a semiconductor substrate is provided, comprising: obtaining a substrate concentration index related to at least one of an oxygen chemical concentration or a carbon chemical concentration included in the semiconductor substrate; classifying the substrate concentration index as any index range among a predetermined plurality of index ranges; determining an acceleration energy of hydrogen ions to be implanted into the semiconductor substrate to an acceleration energy that is preset to correspond to the classified index range; and forming a buffer region of the semiconductor device by implanting hydrogen ions into the semiconductor substrate with the determined acceleration energy.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes

66.

SEMICONDUCTOR DEVICE

      
Application Number JP2023025510
Publication Number 2024/100926
Status In Force
Filing Date 2023-07-10
Publication Date 2024-05-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Yaguchi Shuntaro
  • Yoshimura Takashi
  • Takishita Hiroshi
  • Ooshima Yuusuke
  • Tsuji Hidenori

Abstract

Provided is a semiconductor device including a semiconductor substrate that has a top surface and a bottom surface, in which a bulk donor is distributed between the top surface and the bottom surface, and that is provided with a first conductivity-type drift region, wherein: the semiconductor device includes a first conductivity-type high concentration region that is disposed between the drift region and the bottom surface of the semiconductor substrate, that contains a hydrogen donor, and in which the carrier concentration is higher than the bulk donor concentration; the high concentration region has a first section in which the hydrogen donor concentration in which the bulk donor concentration is subtracted from the carrier concentration is 7×1013/cm3to 1.5×1014/cm3; and, in the depth direction of the semiconductor substrate, the length of the first section is equal to or greater than 50% of the length of the high concentration region.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect

67.

SOLDER MATERIAL

      
Application Number JP2023036193
Publication Number 2024/101041
Status In Force
Filing Date 2023-10-04
Publication Date 2024-05-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Mitsui, Kouhei
  • Watanabe, Hirohiko
  • Saito, Shunsuke
  • Momose, Fumihiko

Abstract

The present invention is a solder material having outstanding elongation at break in high-temperature environments. Provided are: a solder material containing 5.0-10.0 mass% Sb, 2.0-6.0 mass% Ag, 0.1-0.5 mass% Ni, and 3.0-8.0 mass% Cu, the remainder being Sn and unavoidable impurities; a solder joint comprising a joint layer obtained by melting the solder material; and a semiconductor device comprising said joint.

IPC Classes  ?

  • B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
  • C22C 13/00 - Alloys based on tin
  • C22C 13/02 - Alloys based on tin with antimony or bismuth as the next major constituent
  • H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering

68.

DELAY APPARATUS AND DELAY METHOD

      
Application Number 18470385
Status Pending
Filing Date 2023-09-19
First Publication Date 2024-05-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Akahane, Masashi

Abstract

Provided is a delay apparatus which outputs a delayed signal obtained by delaying an asynchronous input signal, the delay apparatus comprising: a synchronous delay unit which determines, in response to detection of a change in the asynchronous input signal at a detection timing synchronous with a clock signal, a synchronous delay timing later than the detection timing by a reference delay time according to the clock signal; and an asynchronous delay unit which changes the delayed signal at an asynchronous delay timing obtained by delaying the synchronous delay timing by an adjustment time obtained by subtracting a detection delay time from a change timing of the asynchronous input signal to the detection timing from a set time according to the clock signal.

IPC Classes  ?

  • H03K 5/135 - Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of time reference signals, e.g. clock signals

69.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

      
Application Number 18472197
Status Pending
Filing Date 2023-09-21
First Publication Date 2024-05-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Shirakawa, Tohru
  • Agata, Yasunori
  • Mitsuzuka, Kaname

Abstract

Provided is a semiconductor device including an active portion arranged below an upper surface electrode and an edge termination structure portion arranged between the upper surface electrode and an end side of a semiconductor substrate in a top view, in which the active portion includes an active collector region, the edge termination structure portion includes an edge collector region, and an integrated value of a carrier concentration of the active collector region in a depth direction is larger than an integrated value of a carrier concentration of the edge collector region in the depth direction. An upper end position of the active collector region in the depth direction and an upper end position of the edge collector region in the depth direction may differ.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
  • H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 29/40 - Electrodes
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes

70.

DIAGNOSTIC APPARATUS, DIAGNOSTIC SYSTEM, AND DIAGNOSTIC METHOD

      
Application Number 18492914
Status Pending
Filing Date 2023-10-24
First Publication Date 2024-05-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yukawa, Shinji

Abstract

A diagnostic apparatus acquires time series data during a time period in which a door closes, upon occurrence of a condition in which a door-side pin in a train carriage is maintained in a state where a locking device does not restrict the pin from moving downward, the time series data including first time series data of a position of the door, and second time series data of an output of a detector configured to detect whether the pin has dropped. The diagnostic apparatus diagnoses, based on the acquired time series data, an abnormality in a positional relationship between the pin and a car-side recess in an opening and closing direction of the door that is in a locked state.

IPC Classes  ?

  • E05F 15/40 - Safety devices, e.g. detection of obstructions or end positions
  • E05B 81/58 - Control of actuators involving time control, e.g. for controlling run-time of electric motors

71.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

      
Application Number 18539304
Status Pending
Filing Date 2023-12-14
First Publication Date 2024-05-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Tamura, Takahiro
  • Nemoto, Michio

Abstract

There is provided a diode including an anode electrode provided on a side of a front surface of a semiconductor substrate, an interlayer dielectric film disposed between the semiconductor substrate and the anode electrode, a first anode region of a first conductivity type provided on the front surface of the semiconductor substrate, a second anode region of a second conductivity type, which is different from the first conductivity type, provided on the front surface of the semiconductor substrate, a first contact hole provided in the interlayer dielectric film, causing the anode electrode to be in Schottky contact with the first anode region, and a second contact hole provided in the interlayer dielectric film and different from the first contact hole, causing the anode electrode to be in ohmic contact with the second anode region.

IPC Classes  ?

  • H01L 21/761 - PN junctions
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
  • H01L 21/225 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
  • H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
  • H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
  • H01L 21/77 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
  • H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L 29/47 - Schottky barrier electrodes
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/872 - Schottky diodes

72.

PRESS-FIT TERMINAL, TERMINAL STRUCTURE, AND SEMICONDUCTOR MODULE

      
Application Number JP2023036714
Publication Number 2024/101049
Status In Force
Filing Date 2023-10-10
Publication Date 2024-05-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Isozaki Makoto

Abstract

Provided is a press-fit terminal that is easily press-fitted into a through hole and reliably prevents escape from the through hole. A press-fit terminal (40) that is to be connected to a substrate (35) that has a through hole (35c) has a press-fitting part (44) that is press-fitted into the through hole and thereby held inside the through hole and an engagement part (45) that engages an outer surface (35b) of the substrate outside the through hole and restricts movement of the press-fit terminal in the direction (F2) of escape from the through hole.

IPC Classes  ?

  • H01R 12/58 - Fixed connections for rigid printed circuits or like structures characterised by the terminals terminals for insertion into holes
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,

73.

DIAGNOSTIC APPARATUS, DIAGNOSTIC SYSTEM, AND DIAGNOSTIC METHOD

      
Document Number 03217700
Status Pending
Filing Date 2023-10-25
Open to Public Date 2024-05-11
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yukawa, Shinji

Abstract

A diagnostic apparatus acquires time series data during a time period in which a door is closed, upon occurrence in a condition in which a door-side pin in a train carriage is maintained in a state where a locking device does not restrict the pin from moving downward, the time series data including first time series data of a position of the door, and second time series data of an output of a detector configured to detect the presence and absence of the fall of the pin. The diagnostic apparatus diagnoses, based on the acquired time series data, an abnormality in a positional relationship between the pin and a car-side recess in an opening and closing direction of the door that is in a locked state.

74.

SEMICONDUCTOR MODULE

      
Application Number JP2023036708
Publication Number 2024/095712
Status In Force
Filing Date 2023-10-10
Publication Date 2024-05-10
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Tamai Yuta
  • Iwaya Akihiko
  • Saito Mai
  • Watakabe Tsubasa
  • Nakamura Yoko

Abstract

The present invention improves adhesion properties between a sealing resin and a joining part of a metal wiring board in a semiconductor module. The semiconductor module (1) comprises: a multi-layer substrate (2) having a plurality of circuit boards (22) arranged on the upper surface of an insulating plate (20), a semiconductor element (3) arranged on the upper surface of at least one of the circuit boards, and a metal wiring board (4) arranged on the upper surface of the semiconductor element. The metal wiring board has a joining part (40) joined to the upper surface of the semiconductor element via a joining member (S3). The joining part includes a plate-like portion having an upper surface and a lower surface. The plate-like portion has a plurality of roughening recesses which roughen the upper surface, and the plurality of roughening recesses are configured from a plurality of kinds of roughening recesses (49a, 49b, 49c, 49d, 49e) which are different in terms of at least one of the opening size, the opening shape, and the depth.

IPC Classes  ?

  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
  • H01L 23/28 - Encapsulation, e.g. encapsulating layers, coatings
  • H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,

75.

SEMICONDUCTOR MODULE AND MANUFACTURING METHOD FOR SEMICONDUCTOR MODULE

      
Application Number JP2023036710
Publication Number 2024/095713
Status In Force
Filing Date 2023-10-10
Publication Date 2024-05-10
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Nakamura Yoko
  • Iwaya Akihiko
  • Saito Mai
  • Watakabe Tsubasa

Abstract

The present invention improves the adhesion between a bonding section of a metal wiring board and a sealing resin in a semiconductor module. This semiconductor module (1) comprises: a multilayer substrate (2) in which a plurality of circuit boards (22) are disposed on the upper surface of an insulating board (20); a semiconductor element (3) disposed on the upper surface of at least one circuit board; and a metal wiring board (4) disposed on the upper surface of the semiconductor element. The metal wiring board has a bonding section (40) bonded to the upper surface of the semiconductor element by means of a bonding material (S3). The bonding section includes a plate-shaped portion having an upper surface and a lower surface, the plate-shaped portion has a plurality of roughening recesses (49) which roughen the upper surface, and at least some (49a) of the plurality of roughening recess sections have a peeling suppression section (70) which protrudes inward and reduces the width of the opening thereof.

IPC Classes  ?

  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,

76.

SEMICONDUCTOR MODULE

      
Application Number JP2023036711
Publication Number 2024/095714
Status In Force
Filing Date 2023-10-10
Publication Date 2024-05-10
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Watakabe Tsubasa
  • Iwaya Akihiko
  • Nakamura Yoko
  • Tamai Yuta
  • Saito Mai

Abstract

The present invention improves the adhesion between a bonding section of a metal wiring plate and a sealing resin in a semiconductor module. This semiconductor module (1) has: a layered substrate (2) in which a plurality of circuit plates (22) are disposed on an upper surface of an insulating plate (20); a semiconductor element (3) disposed on the upper surface of at least one circuit plate; and a metal wiring plate (4) disposed on the upper surface of the semiconductor element. The metal wiring plate has: a plate-like bonding section (40) bonded to the upper surface of the semiconductor element with a bonding material (S3) therebetween; and a plurality of roughening recess sections (45) which roughen the upper surface of the bonding section, wherein each of the plurality of roughening recess sections has a hexagonal shape when viewed in a plan view.

IPC Classes  ?

  • H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
  • H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,

77.

SEMICONDUCTOR MODULE

      
Application Number JP2023032066
Publication Number 2024/095597
Status In Force
Filing Date 2023-09-01
Publication Date 2024-05-10
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Ami, Hideo

Abstract

This semiconductor module comprises at least one substrate and a plurality of semiconductor switching elements. The substrate has a first electrode pattern, a second electrode pattern, and a third electrode pattern, the first electrode pattern being positioned between the second electrode pattern and the third electrode pattern in plan view. The semiconductor switching elements each have a first surface joined to the first electrode pattern, and a second surface facing in the opposite direction to the first surface. A control electrode, a control wiring connected to the control electrode, and a main electrode having a plurality of regions separated by the control wiring are provided to the second surface. Each of the plurality of regions is electrically connected to the second electrode pattern via a first wire and is electrically connected to the third electrode pattern via a second wire. The second electrode pattern is a pattern for a main current. The third electrode pattern is used as an auxiliary pattern for control.

IPC Classes  ?

  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
  • H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

78.

SEMICONDUCTOR MODULE

      
Application Number JP2023036705
Publication Number 2024/095710
Status In Force
Filing Date 2023-10-10
Publication Date 2024-05-10
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Saito Mai
  • Nakamura Yoko
  • Watakabe Tsubasa
  • Iwaya Akihiko

Abstract

The present invention improves adhesion between joined parts of a metal wiring board and a sealing resin in a semiconductor module. A semiconductor module (1) comprises: a multi-layer substrate (2) having a plurality of circuit boards (22) disposed on the upper surface of an insulating plate (20); a semiconductor element (3) disposed on the upper surface of at least one of the circuit boards; and a metal wiring board (4) disposed on the upper surface of the semiconductor element. The metal wiring board has a first joined part (40) joined to the upper surface of the semiconductor element via a first joining member (S3). The first joined part includes a plate-like portion having an upper surface and a lower surface, and has, on the upper surface of the plate-like portion, at least one groove (50, 53) provided along the outer periphery of the first joined part.

IPC Classes  ?

  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,

79.

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 18473277
Status Pending
Filing Date 2023-09-25
First Publication Date 2024-05-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Miyazato, Masaki
  • Ohse, Mina
  • Kagoyama, Yohei

Abstract

Provided is a silicon carbide semiconductor device which includes a semiconductor substrate made of silicon carbide and having an epitaxial region on a front surface. The silicon carbide semiconductor device includes: an active portion which is provided on the semiconductor substrate; a pressure resistant structure portion which is provided on an outer periphery of the active portion; and an element isolation portion which is provided on an outer periphery of the pressure resistant structure portion. The element isolation portion includes an extension prevention portion which is provided to elongate along each of two opposing end sides on an upper surface of the epitaxial region and prevents extension of interface dislocation of the semiconductor substrate.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
  • H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/66 - Types of semiconductor device

80.

DOOR CLOSING APPARATUS

      
Application Number 18475748
Status Pending
Filing Date 2023-09-27
First Publication Date 2024-05-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Shiroma, Takahiro
  • Kitabata, Atsushi

Abstract

A door closing apparatus includes a first rotary electric motor that is configured to rotate a first pinion to open and close a first door body; and a second rotary electric motor that is provided separately from the first rotary electric motor and configured to rotate a second pinion to open and close a second door body.

IPC Classes  ?

  • E05F 15/635 - Power-operated mechanisms for wings using electrical actuators using rotary electromotors for horizontally-sliding wings operated by push-pull mechanisms, e.g. flexible or rigid rack-and-pinion arrangements
  • B61D 19/00 - Door arrangements specially adapted for rail vehicles
  • E05B 65/08 - Locks for special use for sliding wings
  • E05F 15/662 - Motor units therefor, e.g. geared motors

81.

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 18492802
Status Pending
Filing Date 2023-10-24
First Publication Date 2024-05-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Ooshima, Yuusuke
  • Yoshimura, Takashi
  • Takishita, Hiroshi
  • Yaguchi, Shuntaro

Abstract

Provided is a method for manufacturing a semiconductor device, wherein the method: obtains correlated information indicating relationship between a process condition under which a doping region is formed and a defect evaluation value of the doping region; forms the doping region in a substrate for evaluation under a set first process condition; obtains a measurement value of the defect evaluation value of the substrate for evaluation in which the doping region has been formed; obtains, in the correlated information, the defect evaluation value corresponding to the first process condition as a reference value, and compares the measurement value of the defect evaluation value with the reference value; and adjusts the process condition in a process of manufacturing the semiconductor device by using the substrate for manufacture.

IPC Classes  ?

  • H01L 21/66 - Testing or measuring during manufacture or treatment

82.

BONDING MATERIAL APPLICATION APPARATUS AND BONDING MATERIAL APPLICATION METHOD

      
Application Number 18474864
Status Pending
Filing Date 2023-09-26
First Publication Date 2024-05-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Sato, Narumi

Abstract

An apparatus includes a base having a stage region at a front side thereof, and a plurality of suction holes in the stage region; an elastic member provided in the stage region and having a plurality of through holes, each of which is disposed at a position immediately above a corresponding one suction hole when viewed from a suction direction from the front side to a rear side of the base; and a suction unit configured to apply suction for suctioning a target member to be placed in the stage region through the suction holes in the suction direction, thereby to fix the target member to the stage region by the suction via the elastic member.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

83.

SEMICONDUCTOR MODULE

      
Application Number 18475997
Status Pending
Filing Date 2023-09-27
First Publication Date 2024-05-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Nashida, Norihiro

Abstract

A semiconductor module includes a first semiconductor chip including a first main electrode, a second semiconductor chip including a second main electrode, and a conductive pattern. The wiring member includes a connection portion, a first portion, a second portion, and a coupling portion. The coupling portion couples the connection portion, the first portion, and the second portion to one another. A connecting protrusion is formed on a connection surface of the connection portion. A first protrusion is formed on a first connection surface of the first portion. A second protrusion is formed on a second connection surface of the first portion. The conductive pattern and the connection surface are joined to each other by a joining material. The first main electrode and the first connection surface are joined to each other by a first joining material. The second main electrode and the second connection surface are joined to each other by a second joining material.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices

84.

SEMICONDUCTOR DEVICE

      
Application Number 18492787
Status Pending
Filing Date 2023-10-24
First Publication Date 2024-05-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Sakurai, Yosuke
  • Naito, Tatsuya
  • Noguchi, Seiji
  • Kubouchi, Motoyoshi
  • Kodama, Naoko
  • Takishita, Hiroshi

Abstract

Provided is a semiconductor device in which a boundary region between a transistor portion and a diode portion includes: a first portion which is in contact with the transistor portion and is not provided with a lifetime adjustment region; and a second portion which is in contact with the diode portion and to which the lifetime adjustment region of the diode portion extends, a density distribution of a lifetime killer in a first direction has a lateral slope where a density of the lifetime killer decreases from the second portion of the boundary region toward the first portion, a width of the first portion is smaller than a width of the second portion in the first direction, and the width of the first portion is equal to or larger than a width of the lateral slope in the first direction.

IPC Classes  ?

  • H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes

85.

SEMICONDUCTOR DEVICE

      
Application Number 18409424
Status Pending
Filing Date 2024-01-10
First Publication Date 2024-05-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Okumura, Keiji

Abstract

A semiconductor device having an active portion and a gate pad portion on a semiconductor substrate includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type. The active portion has: first semiconductor regions of the first conductivity type; a first electrode provided on the first semiconductor regions; and first trenches. The gate pad portion has: a gate electrode pad provided above the second semiconductor layer; second trenches provided beneath the gate electrode pad; and second semiconductor regions of the second conductivity type, each provided in the first semiconductor layer so as to be in contact with a respective one of bottoms of the second trenches. Each of the second trenches is continuous with a respective one of the first trenches. The second semiconductor layer is continuous from the active portion to the gate pad portion.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/49 - Metal-insulator semiconductor electrodes

86.

SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE, SEMICONDUCTOR DEVICE, AND VEHICLE

      
Application Number 18456647
Status Pending
Filing Date 2023-08-28
First Publication Date 2024-05-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Nakamura, Tsubasa
  • Yoshida, Daiki
  • Higashi, Nobuhiro

Abstract

A semiconductor module includes a lead including a first bonding portion and a coupling portion extending in a Y direction from the first bonding portion. The first bonding portion has a first width end, and a second width end connected to the coupling portion. The lead has first and second length sides opposite to each other in an X direction. The lead has in the X direction first and second widths at first and second positions, and the second position is away from the first position in the Y direction. In the plan view, the lead has a shape in which the first width is greater than the second width such that positions of the first and second length sides at the second position are respectively located inward in the X direction with respect to positions of the first and second length sides at the first position.

IPC Classes  ?

  • H01L 23/495 - Lead-frames
  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices

87.

SEMICONDUCTOR DEVICE

      
Application Number 18453536
Status Pending
Filing Date 2023-08-22
First Publication Date 2024-05-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kumazawa, Yuki

Abstract

A semiconductor device, including: a power semiconductor element having a current output electrode; a wire bonded to the current output electrode; and a degradation detection circuit configured to monitor a temporal change of a voltage value of the wire while a constant current flows through the wire, responsive to satisfaction of a plurality of conditions including that the power semiconductor element is in a turn-off state, and that a temperature of the power semiconductor element is within a predetermined temperature range.

IPC Classes  ?

  • G01R 31/26 - Testing of individual semiconductor devices
  • G01R 31/27 - Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects due to surrounding elements
  • H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors

88.

TESTING APPARATUS AND TESTING METHOD

      
Application Number 18453946
Status Pending
Filing Date 2023-08-22
First Publication Date 2024-05-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yoshida, Mitsuru

Abstract

A testing apparatus, including: a variable resistor coupled to a control electrode of a switching device; a storage circuit storing information indicating a relation between a resistance value of the variable resistor and a voltage change rate at which a voltage between power-source-side and ground-side electrodes of the switching device changes when the switching device is turned off; and a control circuit controlling the variable resistor. The control circuit sets the variable resistor to have a first resistance value and obtains a first value of the voltage change rate, sets the variable resistor to have a second resistance value based on the first value of the voltage change rate and the information, obtains a second value of the voltage change rate when the variable resistor is of the second resistance value, and determines whether the second value of the voltage change rate meets a specification of the switching device.

IPC Classes  ?

  • G01R 31/26 - Testing of individual semiconductor devices

89.

SWITCHING CONTROL CIRCUIT, CONTROL CIRCUIT, AND POWER SUPPLY CIRCUIT

      
Application Number 18455339
Status Pending
Filing Date 2023-08-24
First Publication Date 2024-05-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yamada, Ryuji

Abstract

A switching control circuit for a power supply circuit including first and second inductors, and first and second transistors controlling first and second inductor currents flowing through the first and second inductors, respectively. The switching control circuit includes: a detection circuit detecting a switching period of the first transistor and a time difference between first and second timings, at which the first and second inductor currents respectively reach first and second predetermined values; an error output circuit outputting an error between a predetermined ratio and a ratio of the time difference to the switching period; and a driving signal output circuit configured to output a driving signal to turn on the second transistor, after the second inductor current reaches the second predetermined value, and to turn off the second transistor, in response to a second time period according to the first time period and the error having elapsed.

IPC Classes  ?

  • H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
  • H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
  • H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
  • H02M 7/23 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only arranged for operation in parallel

90.

SEMICONDUCTOR DEVICE

      
Application Number 18539311
Status Pending
Filing Date 2023-12-14
First Publication Date 2024-05-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Sato, Shigeki
  • Momota, Seiji
  • Miyasaka, Tadashi

Abstract

A semiconductor device is preferably excellent in characteristics such as a loss characteristic. Provided is a semiconductor device including a semiconductor substrate, including an upper-surface electrode provided on an upper surface of the semiconductor substrate; an lower-surface electrode provided on a lower surface of the semiconductor substrate; a transistor portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; a first diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; and a second diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode, wherein the first diode portion and the second diode portion have different resistivities in a depth direction of the semiconductor substrate.

IPC Classes  ?

  • H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
  • H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes

91.

SEMICONDUCTOR MODULE, SEMICONDUCTOR DEVICE, AND VEHICLE

      
Application Number JP2023031781
Publication Number 2024/090029
Status In Force
Filing Date 2023-08-31
Publication Date 2024-05-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Nakamura Yoko
  • Iwaya Akihiko
  • Saito Mai
  • Watakabe Tsubasa
  • Tamai Yuta

Abstract

The present invention prevents peeling at an interface between a sealing material and a lead bonded to an electrode of a semiconductor element by a bonding material. A semiconductor module (2) is provided with: a circuit board (5) on which a semiconductor element (510) is mounted; a lead (7) bonded to an electrode on an upper surface of the semiconductor element by a bonding material; and a sealing material (9) that seals the semiconductor element and the lead. In the lead, roughening recesses (720) that prevent peeling at an interface between the lead and the sealing material are formed on an upper surface (710) of a bonding part (701) bonded to the electrode. The roughening recesses include: a main recess (721) in which is formed a folded-back part facing one or more wall surfaces in the recess and protruding toward the wall surfaces; and a sub-recess (722) that has a center thereof at a position outside the main recess in plan view and a prescribed distance away from the wall surface on which the folded-back part is formed, and that has surfaces that incline so that the sub-recess (722) becomes shallower from the center toward an opening end of the main recess.

IPC Classes  ?

  • H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
  • H01L 23/28 - Encapsulation, e.g. encapsulating layers, coatings
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,

92.

FUEL CELL POWER GENERATION APPARATUS

      
Application Number JP2023038974
Publication Number 2024/090575
Status In Force
Filing Date 2023-10-27
Publication Date 2024-05-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Takahashi, Kuniyuki
  • Fukumura, Taku
  • Takano, Hiroshi
  • Mikami, Makoto
  • Kato, Taichiro

Abstract

Provided is a fuel cell power generation apparatus comprising: a fuel cell having a fuel electrode and an air electrode; a fuel pipe that supplies hydrogen to the fuel electrode; an air compressor that compresses air and supplies the compressed air to the air electrode; an exhaust pipe that discharges exhaust gas generated by the fuel cell; and a first intermediate heat exchanger that is capable of performing heat exchange between a first coolant for cooling the fuel cell and a first cold heat source, which is any of air, liquid, or cold heat generated when compressed hydrogen expands.

IPC Classes  ?

  • H01M 8/04 - Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids
  • H01M 8/00 - Fuel cells; Manufacture thereof
  • H01M 8/04029 - Heat exchange using liquids
  • H01M 8/04044 - Purification of heat exchange media
  • H01M 8/04537 - Electric variables
  • H01M 8/04858 - Electric variables
  • H01M 8/10 - Fuel cells with solid electrolytes
  • H01M 8/249 - Grouping of fuel cells, e.g. stacking of fuel cells comprising two or more groupings of fuel cells, e.g. modular assemblies

93.

ELECTRIC POWER SUPPLY DEVICE

      
Application Number JP2023037655
Publication Number 2024/085177
Status In Force
Filing Date 2023-10-18
Publication Date 2024-04-25
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Takano, Sachio

Abstract

This electric power supply device simulates a synchronous generator having a rotating body and controls the frequency of an output voltage, thereby inputting and outputting electric power to and from an electrical power grid, the electric power supply device comprising: a determination unit that determines whether an accident has occurred in the electric power grid; a command frequency output unit that, in cases where the electric power grid is normal, outputs a command frequency on the basis of a difference between a first electric power that is the target to be inputted and outputted to and from the electric power grid and a second electric power that is actually inputted and outputted to and from the electric power grid, so that the aforementioned difference is reduced, and, in cases where an accident has occurred in the electric power grid, outputs a prescribed command frequency irrespective of the difference; a generation unit that generates a control signal for controlling the output voltage on the basis of the command frequency; and a drive unit that outputs the output voltage that is generated on the basis of the control signal to the electric power grid.

IPC Classes  ?

  • H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters or transformers
  • H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

94.

SEMICONDUCTOR DEVICE

      
Application Number 18236996
Status Pending
Filing Date 2023-08-23
First Publication Date 2024-04-18
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Hirao, Akira
  • Ikeda, Yoshinari
  • Hori, Motohito

Abstract

A semiconductor device includes: an insulated circuit substrate including a conductive plate on a top surface side; a semiconductor chip mounted on the conductive plate; and an external connection terminal electrically connected to the semiconductor chip and including an inner-side conductor layer, an outer-side conductor layer provided at a circumference of the inner-side conductor layer, and an insulating layer interposed between the inner-side conductor layer and the outer-side conductor layer.

IPC Classes  ?

  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
  • H01L 23/498 - Leads on insulating substrates

95.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

      
Application Number 18398053
Status Pending
Filing Date 2023-12-27
First Publication Date 2024-04-18
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Naito, Tatsuya

Abstract

There is provided a semiconductor device comprising: a semiconductor substrate including a drift region of a first conductivity type; an emitter region of the first conductivity type provided above the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a base region of a second conductivity type provided between the emitter region and the drift region inside the semiconductor substrate; a first accumulation region of the first conductivity type provided between the base region and the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a plurality of trench portions provided to pass through the emitter region, the base region and first accumulation region from an upper surface of the semiconductor substrate, and provided with a conductive portion inside; and a capacitance addition portion provided below the first accumulation region to add a gate-collector capacitance thereto.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

96.

SEMICONDUCTOR DEVICE

      
Application Number 18456943
Status Pending
Filing Date 2023-08-28
First Publication Date 2024-04-18
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Jonishi, Akihiro

Abstract

A semiconductor device includes: a semiconductor base body of a first conductivity-type; a first well region of a second conductivity-type provided in the semiconductor base body; at least one second well region of the first conductivity-type implementing a part of a high-side circuit provided in the first well region; a buried layer of the second conductivity-type provided at a bottom of the first well region and having a higher impurity concentration than the first well region; a voltage blocking region of the second conductivity-type provided at a circumference of the first well region; and an extraction region of the first conductivity-type provided to have a greater depth than the second well region at least at a part of a circumference of the high-side circuit in the first well region so as to be opposed to the second well region.

IPC Classes  ?

  • H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

97.

POWER CONVERTER

      
Application Number 18479203
Status Pending
Filing Date 2023-10-02
First Publication Date 2024-04-18
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Li, Mengyu

Abstract

A power converter includes a semiconductor module with a switching element, a DC terminal, and an AC terminal, and includes a capacitor module with a capacitor terminal coupled to the DC terminal of the semiconductor module. The power converter includes a cooling module. The cooling module has a first cooling surface provided to face the heat dissipation portion, and has a second cooling surface provided to face the DC terminal or the capacitor terminal. The cooling module has a third cooling surface extending in a direction intersecting each of the first cooling surface and the second cooling surface, the third cooling surface being configured to cool the capacitor module.

IPC Classes  ?

  • H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
  • H02M 7/493 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode the static converters being arranged for operation in parallel
  • H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating

98.

SEMICONDUCTOR MODULE

      
Application Number 18236988
Status Pending
Filing Date 2023-08-23
First Publication Date 2024-04-18
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kurosawa, Eiji

Abstract

A semiconductor module 1 includes an IGBT 31z configured to supply a motor 24 with power, a pre-driver 41z configured to drive the IGBT 31z, a protection unit 42z configured to execute first protection operation protecting the IGBT 31z and the pre-driver 41z from operation in an abnormal state, an IGBT 31db configured to adjust the magnitude of voltage input to the IGBT 31z, a pre-driver 41db configured to drive the IGBT 31db, and a protection unit 42db configured to execute second protection operation protecting the IGBT 31db from operation in an abnormal state, and the protection unit 42db executes the second protection operation when the IGBT 31db is operating in an abnormal state and otherwise does not execute the second protection operation regardless of whether or not the protection unit 42z is executing the first protection operation.

IPC Classes  ?

  • H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit

99.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

      
Application Number 18395662
Status Pending
Filing Date 2023-12-25
First Publication Date 2024-04-18
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kubouchi, Motoyoshi

Abstract

A method of manufacturing a semiconductor device comprising a transistor section and a diode section each having a drift region of a first conductivity-type inside a semiconductor substrate, and a base region of a second conductivity-type above the drift region. A particle beam is irradiated from an upper surface of the semiconductor substrate forming a lifetime control region including lifetime killers below the base region from at least a part of the transistor section to the diode section. A threshold value adjusting section is formed for adjusting a threshold value of the transistor section, including a thickened portion Wgi of a gate insulating film in a gate trench section adjacent to the base region, the thickened portion having a dielectric constant less than or equal to 0.9 times a remaining portion of the gate insulating film in the gate trench section.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L 29/66 - Types of semiconductor device

100.

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD

      
Application Number 18395756
Status Pending
Filing Date 2023-12-26
First Publication Date 2024-04-18
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yoshida, Soichi

Abstract

Provided is a semiconductor device, comprising a semiconductor substrate and a first electrode provided above an upper surface of the semiconductor substrate. The semiconductor substrate has a first conductive type drift region. The semiconductor substrate has a second conductive type base region provided between the drift region and the upper surface of the semiconductor substrate. The semiconductor substrate has a second conductive type contact region with a higher impurity concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate. The semiconductor substrate has a trench contact that has a conductive material in an interior of a groove portion penetrating the contact region, the conductive material being in contact with at least a part of the semiconductor substrate, and connected to the first electrode.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes
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