Fuji Electric Co., Ltd.

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        Patent 4,442
        Trademark 45
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        United States 2,889
        World 1,571
        Canada 23
        Europe 4
Owner / Subsidiary
[Owner] Fuji Electric Co., Ltd. 4,186
Fuji Electric FA Components & Systems Co., Ltd. 230
Fuji Electric Systems Co., Ltd. 110
Chichibu Fuji Co., Ltd. 12
Date
New (last 4 weeks) 37
2021 October (MTD) 21
2021 September 46
2021 August 23
2021 July 33
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IPC Class
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate 749
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect 635
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions 629
H01L 29/66 - Types of semiconductor device 543
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes 386
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NICE Class
09 - Scientific and electric apparatus and instruments 43
07 - Machines and machine tools 23
11 - Environmental control apparatus 20
12 - Land, air and water vehicles; parts of land vehicles 12
06 - Common metals and ores; objects made of metal 4
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Status
Pending 404
Registered / In Force 4,083
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1.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

      
Application Number 17182447
Status Pending
Filing Date 2021-02-23
First Publication Date 2021-10-21
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Nakagawa, Sho

Abstract

A method for manufacturing a semiconductor device includes: forming a trimming element inside or over a semiconductor substrate; forming an insulating film on the trimming element; forming, on the insulating film, a first wiring layer connected to one end of the trimming element via a first contact region penetrating the insulating film; forming, on the insulating film, a second wiring layer connected to another end of the trimming element via a second contact region penetrating the insulating film; trimming the trimming element; and examining an insulated state between the semiconductor substrate and either the first wiring layer or the second wiring layer after the trimming.

IPC Classes  ?

  • H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
  • H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L 29/866 - Zener diodes
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

2.

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 17360980
Status Pending
Filing Date 2021-06-28
First Publication Date 2021-10-21
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Ohse, Naoyuki
  • Kojima, Takahito

Abstract

A method of manufacturing a silicon carbide semiconductor device, including forming a first-conductivity-type region in a SiC semiconductor substrate, selectively forming a plurality of second-conductivity-type regions in the first-conductivity-type region, forming an interlayer insulating film covering the first-conductivity-type region and the second-conductivity-type regions, selectively removing the interlayer insulating film to form a plurality of openings exposing the second-conductivity-type regions, forming, in each opening, a layered metal film having a cap film stacked on an aluminum film, thermally diffusing aluminum atoms in the aluminum film to thereby form a plurality of second-conductivity-type high-concentration regions, removing the layered metal film, selectively removing the interlayer insulating film to form a contact hole, forming a first electrode by sequentially stacking a titanium film and a metal film containing aluminum on the first surface of the semiconductor substrate in the contact hole, and forming a second electrode on the second main surface of the semiconductor substrate.

IPC Classes  ?

  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/872 - Schottky diodes
  • H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups

3.

SEMICONDUCTOR MODULE CIRCUIT STRUCTURE

      
Application Number 17363378
Status Pending
Filing Date 2021-06-30
First Publication Date 2021-10-21
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Isozaki, Makoto
  • Takahashi, Seiichi

Abstract

A semiconductor module circuit structure, including an insulating circuit substrate having an insulating plate, and a circuit pattern formed on a top face of the insulating plate, and a semiconductor element disposed on a top face of the circuit pattern. The circuit pattern includes a first straight part extending in a first direction, a second straight part extending in a second direction different from the first direction, and a corner part connecting the first and second straight parts. A wiring member is formed on a top surface of the first straight part along the first direction, the wiring member being formed off-center at the first straight part to be closer to an outer periphery of the circuit pattern.

IPC Classes  ?

  • H01L 23/367 - Cooling facilitated by shape of device
  • H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
  • H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
  • H01L 23/498 - Leads on insulating substrates
  • H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties

4.

POWER CONVERTER

      
Application Number 17218982
Status Pending
Filing Date 2021-03-31
First Publication Date 2021-10-21
Owner
  • FUJI ELECTRIC CO., LTD. (Japan)
  • HONDA MOTOR CO., LTD. (Japan)
Inventor
  • Iida, Takashi
  • Yano, Mitsuteru

Abstract

A power converter includes a power conversion controller configured to determine whether or not an output terminal is misconnected to a system power supply based on a current between a power converter and the output terminal and a voltage between the power converter and the output terminal, and to perform a control to stop power conversion in the power converter when determining that the output terminal is misconnected to the system power supply.

IPC Classes  ?

  • H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
  • H02J 3/00 - Circuit arrangements for ac mains or ac distribution networks
  • H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries

5.

MOUNTING STRUCTURE FOR HEATER ELEMENT, METHOD FOR MOUNTING HEATER ELEMENT, AND POWER CONVERSION DEVICE

      
Application Number 17208404
Status Pending
Filing Date 2021-03-22
First Publication Date 2021-10-21
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Fukuchi, Shun

Abstract

A mounting structure for a heater element includes a heater element having a surface to be cooled, a board on which the heater element is mounted, a cooling member that cools the surface to be cooled of the heater element mounted on the board, and a supporting member temporarily fixed to the board, the supporting member temporarily fixing the heater element.

IPC Classes  ?

  • H01L 23/40 - Mountings or securing means for detachable cooling or heating arrangements
  • H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
  • H01L 23/433 - Auxiliary members characterised by their shape, e.g. pistons
  • H05K 1/18 - Printed circuits structurally associated with non-printed electric components
  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices

6.

POWER CONVERSION DEVICE

      
Application Number 17218858
Status Pending
Filing Date 2021-03-31
First Publication Date 2021-10-21
Owner
  • FUJI ELECTRIC CO., LTD. (Japan)
  • HONDA MOTOR CO., LTD. (Japan)
Inventor
  • Katsumata, Hiroki
  • Ando, Nobuhisa
  • Yokoyama, Shinichi

Abstract

A power conversion device includes a power converter, a relay, and a welding detector. The welding detector includes a first resistor connected to a terminal of the relay on a first side, a capacitor and a second resistor, both of which are connected to a terminal of the relay on a second side, an application unit to apply an inspection signal to the relay via the capacitor and the second resistor, and a determiner connected between the capacitor and the second resistor, the determiner detecting a signal based on application of the inspection signal by the application unit to determine whether or not the relay is welded.

IPC Classes  ?

  • G01R 31/327 - Testing of circuit interrupters, switches or circuit-breakers
  • G01R 31/00 - Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
  • B60R 16/03 - Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric for supply of electrical power to vehicle subsystems

7.

EXHAUST GAS TREATMENT DEVICE FOR SHIPS

      
Application Number JP2021006831
Publication Number 2021/210272
Status In Force
Filing Date 2021-02-24
Publication Date 2021-10-21
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Itokawa Kazuyoshi
  • Takahashi Kuniyuki

Abstract

Provided is an exhaust gas treatment device for ships, the exhaust gas treatment device comprising: a reaction tower to which exhaust gas including particulate substances and a liquid for treating exhaust gas are supplied and from which effluent from exhaust gas treatment is discharged; and a heating unit for heating discharged matter including effluent and evaporating at least a part of water included in the discharged matter. The exhaust gas treatment device for ships may further comprise a first storage unit for storing first discharged matter that includes particulate substances removed from effluent and a part of effluent. The heating unit may heat the first storage unit. The exhaust gas treatment device for ships may further comprise a second storage unit for storing second discharged matter that includes effluent from which at least a part of particulate substances has been removed. The heating unit may heat the second storage unit.

IPC Classes  ?

  • B01D 47/00 - Separating dispersed particles from gases, air or vapours by liquid as separating agent
  • B63H 21/32 - Arrangements of propulsion power-unit exhaust uptakes; Funnels peculiar to vessels

8.

INTEGRATED CIRCUIT, POWER SUPPLY DEVICE

      
Application Number JP2021008510
Publication Number 2021/210288
Status In Force
Filing Date 2021-03-04
Publication Date 2021-10-21
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Endo, Yuta
  • Sugawara, Takato

Abstract

An integrated circuit that performs switching of a transistor of a power supply circuit in order to generate an output voltage of a target level in the power supply circuit, the integrated circuit being provided with: a first terminal to which is applied a feedback voltage corresponding to the output voltage; a signal detection circuit that detects, via the first terminal, a setting signal outputted from an external circuit that operates on the basis of the output voltage; and a drive circuit that drives the transistor on the basis of the setting signal detected by the signal detection circuit.

IPC Classes  ?

  • H02M 7/12 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
  • H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

9.

INTEGRATED CIRCUIT AND POWER SUPPLY CIRCUIT

      
Application Number JP2021008517
Publication Number 2021/210289
Status In Force
Filing Date 2021-03-04
Publication Date 2021-10-21
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Endo, Yuta
  • Sugawara, Takato

Abstract

An integrated circuit comprising a first capacitor to which a voltage is applied according to an alternating voltage, an inductor, and a transistor for controlling an inductor current passing through the inductor, and switching the transistor of a power supply circuit for generating from the alternating voltage an output voltage at a target level. The integrated circuit further comprises an identification circuit for identifying whether the voltage level of the effective value of the alternating voltage is a first level or a second level higher than the first level, and a signal output circuit for outputting a driving signal for driving the transistor when the voltage level of the effective value is the first level, and outputting the corrected driving signal to correct an input current to the power supply circuit when the voltage level of the effective value is the second level.

IPC Classes  ?

  • H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
  • H02M 7/12 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

10.

BEVERAGE SUPPLY DEVICE

      
Application Number JP2021014286
Publication Number 2021/210422
Status In Force
Filing Date 2021-04-02
Publication Date 2021-10-21
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Matsumoto, Masahiro

Abstract

Provided is a beverage supply device 1 that supplies a beverage to a cup C placed on a supply stage 20, the beverage supply device 1 being provided with a display operation unit 13 that displays various information and receives input through a touch operation. The beverage supply device 1 is provided with: a reading unit 50 that reads, from a card 100 placed over a reading region, allocation information recorded on and allocated to the card 100; and a control unit 60 that, when allocation information is read via the reading unit 50, causes a plurality of types of selectable beverages corresponding to the allocation information to be displayed on the display operation unit 13. When allocation information relates to supply of a beverage other than an allergenic beverage containing an allergen, the control unit 60 preferably causes a plurality of types of selectable beverages other than an allergenic beverage to be displayed on the display operation unit 13.

IPC Classes  ?

  • B67D 1/08 - Apparatus or devices for dispensing beverages on draught - Details

11.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number JP2021008891
Publication Number 2021/210293
Status In Force
Filing Date 2021-03-08
Publication Date 2021-10-21
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Harada Yuichi
  • Noguchi Seiji
  • Komiyama Norihiro
  • Ikura Yoshihiro
  • Sakurai Yosuke

Abstract

Provided is a semiconductor device comprising: a drift region of a first conductivity type provided on a semiconductor substrate; a base region of a second conductivity type provided over the drift region; an emitter region of the first conductivity type provided over the base region; a plurality of trench portions arrayed in a predetermined array direction on an upper-surface side of the semiconductor substrate; a trench contact portion provided on the upper-surface side of the semiconductor substrate between two of the plurality of trench portions that are adjacent to each other; and a contact layer of the second conductivity type provided under the trench contact portion and having a doping concentration higher than that of the base region. The lower end of the trench contact portion is deeper than the lower end of the emitter region, and the emitter region and the contact layer are in contact with each other on a side wall of the trench contact portion.

IPC Classes  ?

  • H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L 29/49 - Metal-insulator semiconductor electrodes
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/336 - Field-effect transistors with an insulated gate
  • H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
  • H01L 29/868 - PIN diodes
  • H01L 29/861 - Diodes

12.

SEMICONDUCTOR DEVICE

      
Application Number 17356585
Status Pending
Filing Date 2021-06-24
First Publication Date 2021-10-14
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Harada, Yuichi
  • Noguchi, Seiji
  • Komiyama, Norihiro
  • Ikura, Yoshihiro
  • Sakurai, Yosuke

Abstract

Provided is a semiconductor device that has a plurality of gate trench portions electrically connected to a gate electrode, and a plurality of dummy trench portions electrically connected to an emitter electrode, and includes a first trench group that includes one gate trench portion and two dummy trench portions adjacent to the gate trench portion and adjacent to each other, and a second trench group that includes two gate trench portions adjacent to each other.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/40 - Electrodes

13.

GRID INTERCONNECTION DEVICE AND SERVER

      
Application Number 17356578
Status Pending
Filing Date 2021-06-24
First Publication Date 2021-10-14
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Yin, Songhao
  • Nagakura, Takayuki

Abstract

It is desirable to improve the accuracy of voltage control in the grid interconnection device for supplying the power generated by the distributed power source to the interconnection point. Provided is a grid interconnection device for supplying power generated by a distributed power source to an interconnection point, comprising: a calculation unit for calculating voltage at the interconnection point based on output voltage of the grid interconnection device, output current of the grid interconnection device, and an impedance component between the grid interconnection device and the interconnection point; and a control unit for controlling output power from the grid interconnection device, based on voltage at the interconnection point calculated by the calculation unit.

IPC Classes  ?

  • H02J 3/46 - Controlling the sharing of output between the generators, converters, or transformers
  • H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters, or transformers
  • H02J 3/16 - Circuit arrangements for ac mains or ac distribution networks for adjusting voltage in ac networks by changing a characteristic of the network load by adjustment of reactive power
  • G06F 1/28 - Supervision thereof, e.g. detecting power-supply failure by out of limits supervision

14.

SUPERJUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUPERJUNCTION SEMICONDUCTOR DEVICE

      
Application Number 17187022
Status Pending
Filing Date 2021-02-26
First Publication Date 2021-10-14
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Nishimura, Takeyoshi

Abstract

A method of manufacturing a superjunction device, including forming a first semiconductor layer of a first conductivity type on a semiconductor substrate, forming a plurality of first trenches from the first semiconductor layer, forming a second semiconductor layer of the first conductivity type on the first semiconductor layer and in the first trenches, implanting an impurity of a second conductivity type in the second semiconductor layer, thereby forming a plurality of well regions of the second conductivity type, and a parallel pn structure including first and second columns alternating one another repeatedly in a direction parallel to a surface of the semiconductor substrate, forming a plurality of second trenches penetrating through the second semiconductor layer and reaching the first columns, forming a plurality of second semiconductor regions of the second conductivity type in the well regions in the active region, and selectively forming a plurality of first semiconductor regions of the first conductivity type in the second semiconductor regions.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/66 - Types of semiconductor device

15.

SEMICONDUCTOR DEVICE

      
Application Number JP2021002585
Publication Number 2021/199622
Status In Force
Filing Date 2021-01-26
Publication Date 2021-10-07
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Isobe, Daisuke

Abstract

The present invention prevents overheating of a power semiconductor element and prevents false overcurrent detection notifications to a higher-level control device. When an input signal (IN) for instructing an operation to turn on a power semiconductor element is input, a pulse generation circuit (40) generates a pulse, and a gated latch circuit (50) receives said pulse and maintains an overcurrent detection state of an overcurrent detection circuit (160). A signal (signal) is created by an oscillation signal creation circuit (30) when the input signal (IN) is input and the overcurrent detection state is in effect, and an overcurrent mode switching circuit (60) switches said signal (signal) to an inverted or non-inverted signal (signal0) depending on whether the overcurrent detection state took effect after or before input of the input signal (IN) and outputs the same, and also outputs a signal (signal1) obtained by inverting the signal (signal). From the signal (signal1) and a signal obtained by dividing the signal (signal0), a timing determination circuit (70) outputs a signal (output) that periodically turns on the power semiconductor element.

IPC Classes  ?

  • H03K 17/08 - Modifications for protecting switching circuit against overcurrent or overvoltage
  • H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
  • H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion

16.

METHOD FOR MANUFACTURING STEAM TURBINE MEMBER

      
Application Number JP2021010543
Publication Number 2021/200104
Status In Force
Filing Date 2021-03-16
Publication Date 2021-10-07
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Nakashima, Yuya
  • Chiwata, Morio
  • Ishimura, Susumu
  • Fukuda, Yuta

Abstract

Provided is a method for manufacturing a steam turbine member that has extremely excellent smoothness. The method for manufacturing a steam turbine member according to the present invention includes: a clad layer formation step for forming a clad layer on a base material at a site prone to corrosion, using a powder material containing a metal; and a surface heating step for heating/melting the surface of the clad layer.

IPC Classes  ?

  • F01D 25/00 - Component parts, details, or accessories, not provided for in, or of interest apart from, other groups
  • B23K 26/073 - Shaping the laser spot
  • B23K 26/342 - Build-up welding
  • B23K 26/354 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting

17.

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

      
Application Number JP2021014146
Publication Number 2021/201216
Status In Force
Filing Date 2021-04-01
Publication Date 2021-10-07
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Uchida Misaki
  • Yoshimura Takashi
  • Takishita Hiroshi
  • Kubouchi Motoyoshi
  • Nemoto Michio

Abstract

Provided is a semiconductor device that comprises a first conductivity–type buffer region that is arranged on a lower surface side of a semiconductor substrate and has at least two doping concentration peaks, a first conductivity–type high-concentration region that is arranged between the buffer region and an upper surface of the semiconductor substrate, is at least 50 μm long in the depth direction, and has a higher donor concentration than bulk donor concentration, and a first conductivity–type or second conductivity–type lower surface region that is arranged between the buffer region and the lower surface of the semiconductor substrate and has a higher doping concentration than the high-concentration region. Of the doping concentration peaks of the buffer region, a shallowest doping concentration peak that is closest to the lower surface of the semiconductor substrate is a hydrogen donor concentration peak that is higher concentration than the other doping concentration peaks. The ratio A/B of the peak concentration A of the shallowest doping concentration peak and the average peak concentration B of the other doping concentration peaks is no more than 200.

IPC Classes  ?

  • H01L 21/263 - Bombardment with wave or particle radiation with high-energy radiation
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
  • H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
  • H01L 21/8234 - MIS technology
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/336 - Field-effect transistors with an insulated gate

18.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number JP2021014179
Publication Number 2021/201235
Status In Force
Filing Date 2021-04-01
Publication Date 2021-10-07
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kubouchi Motoyoshi
  • Yoshimura Takashi
  • Takishita Hiroshi
  • Uchida Misaki
  • Nemoto Michio

Abstract

Provided is a semiconductor device which is provided with: a semiconductor substrate which has a top surface and a bottom surface and includes a bulk donor; a buffer region of a first conductive type which is positioned on the bottom surface side of the semiconductor substrate, includes a hydrogen donor, and has a single first doping concentration peak in the doping concentration distribution in the depth direction of the semiconductor substrate; a high-concentration region of the first conductive type which is positioned between the buffer region and the top surface of the semiconductor substrate, includes a hydrogen donor, and has a donor concentration which is higher than the bulk donor concentration; and a bottom surface region of the first or second conductive type which is positioned between the buffer region and the bottom surface of the semiconductor substrate, and has a higher doping concentration than does the high-concentration region.

IPC Classes  ?

  • H01L 21/263 - Bombardment with wave or particle radiation with high-energy radiation
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
  • H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
  • H01L 21/8234 - MIS technology
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/336 - Field-effect transistors with an insulated gate

19.

SEMICONDUCTOR MODULE AND VEHICLE

      
Application Number 17183389
Status Pending
Filing Date 2021-02-24
First Publication Date 2021-10-07
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Matsuzawa, Kensuke
  • Koyama, Takahiro
  • Gohara, Hiromichi

Abstract

Provided is a semiconductor module including semiconductor devices and a cooling apparatus, wherein the semiconductor device has semiconductor chips and a circuit board with the semiconductor chips implemented thereon; the cooling apparatus has a top plate, a side wall, a bottom plate, a coolant flow portion, an inlet, an outlet and a plurality of fins; the top plate and the bottom plate have three through holes that are through holes for inserting fastening members that fasten the semiconductor module to an external apparatus, penetrating the top plate and the bottom plate in one direction respectively; and a geometric center of gravity of a aperture of at least one of the inlet and the outlet may also be positioned inside a virtual triangle with the three through holes being vertexes in planar view.

IPC Classes  ?

  • H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
  • H01L 23/40 - Mountings or securing means for detachable cooling or heating arrangements

20.

MOTOR DRIVE DEVICE, MOTOR DRIVE METHOD, AND COMPUTER-READABLE MEDIUM HAVING RECORDED THEREON MOTOR DRIVE PROGRAM

      
Application Number 17183390
Status Pending
Filing Date 2021-02-24
First Publication Date 2021-10-07
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Hirakata, Masaki

Abstract

Provided is a motor drive device comprising a motor control unit that controls a plurality of upper arm-side switching elements and a plurality of lower arm-side switching elements provided to an inverter for driving a motor; a current determination unit that determines whether a motor current flowing through at least one switching element of the plurality of upper arm-side switching elements and the plurality of lower arm-side switching elements is equal to or smaller than a threshold value; and a short-circuit control unit that performs switching between all-on of the plurality of upper arm-side switching elements and all-on of the plurality of lower arm-side switching elements, on condition that the motor current is equal to or smaller than the threshold value, in a short-circuiting operation of alternately switching all-on of the plurality of upper arm-side switching elements and all-on of the plurality of lower arm-side switching elements.

IPC Classes  ?

  • H02P 29/024 - Detecting a fault condition, e.g. short circuit, locked rotor, open circuit or loss of load
  • H02P 27/08 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
  • H02P 29/68 - Controlling or determining the temperature of the motor or of the drive based on the temperature of a drive component or a semiconductor component

21.

SEMICONDUCTOR DEVICE

      
Application Number 17349885
Status Pending
Filing Date 2021-06-16
First Publication Date 2021-10-07
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Naito, Tatsuya

Abstract

Provided is a semiconductor device comprising: a semiconductor substrate; a gate trench section that is provided from an upper surface to an inside of the semiconductor substrate and extends in a predetermined extending direction on the upper surface of the semiconductor substrate; a mesa section in contact to the gate trench section in an arrangement direction orthogonal the extending direction; and an interlayer dielectric film provided above the semiconductor substrate; wherein the interlayer dielectric film is provided above at least a part of the gate trench section in the arrangement direction; a contact hole through which the mesa section is exposed is provided to the interlayer dielectric film; and a width of the contact hole in the arrangement direction is equal to or greater than a width of the mesa section in the arrangement direction.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
  • H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

22.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

      
Application Number 17155608
Status Pending
Filing Date 2021-01-22
First Publication Date 2021-09-30
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Nogawa, Hiroyuki

Abstract

A semiconductor device including an insulating circuit board. The insulating circuit board has an insulating plate, a plurality of circuit patterns disposed on a front surface of the insulating plate, any adjacent two of the circuit patterns having a gap therebetween, each circuit pattern having at least one corner, each corner being in a corner area that covers the corner and a portion of each gap adjacent to the corner, and a buffer material containing resin, applied at a plurality of corner areas, to fill the gaps in the plurality of corner areas.

IPC Classes  ?

  • H01L 23/498 - Leads on insulating substrates
  • H01L 23/15 - Ceramic or glass substrates
  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 23/16 - Fillings or auxiliary members in containers, e.g. centering rings
  • H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
  • H01L 23/053 - Containers; Seals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
  • H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
  • H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings

23.

SENSOR DEVICE AND SENSOR SYSTEM

      
Application Number 17183394
Status Pending
Filing Date 2021-02-24
First Publication Date 2021-09-30
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Karasawa, Katsuya
  • Matsunami, Kazuhiro

Abstract

A sensor device is provided, including: a physical quantity sensor for detecting a physical quantity; and a processing circuit for generating and outputting a second signal including first data that are included in a first signal input from outside and second data that indicate a detection result of the physical quantity sensor. The first signal and the second signal have a plurality of messages, respectively; each message has two or more fast data slots and slow data slots; the first signal and the second signal are signals with predetermined data divided and stored in the slow data slots of two or more of the messages; and the processing circuit stores the first data and the second data in two of the fast data slots of the second signal.

IPC Classes  ?

  • H04L 29/08 - Transmission control procedure, e.g. data link level control procedure
  • H04J 3/06 - Synchronising arrangements

24.

SEMICONDUCTOR MODULE

      
Application Number 17187588
Status Pending
Filing Date 2021-02-26
First Publication Date 2021-09-30
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Sato, Tadahiko
  • Sato, Kenichiro

Abstract

A semiconductor module includes a multilayer substrate having a main wiring layer formed therein, a main current flowing in the main wiring layer when the semiconductor device is turned on, a first and second semiconductor elements, each of which has a top electrode on a top surface thereof and a bottom electrode on a bottom surface thereof, and is disposed on a top surface of the main wiring layer to which the bottom electrode is conductively connected, a metal plate having an end portion, a bottom surface of the end portion being conductively connected to the top electrode of the first semiconductor element, and a control board including an insulating plate disposed on the top surface of the end portion and a control wiring layer disposed on a top surface of the insulating plate for controlling turning on and off of the first and second semiconductor elements.

IPC Classes  ?

  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 23/498 - Leads on insulating substrates
  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
  • H01L 23/64 - Impedance arrangements

25.

GRID CONNECTED INVERTER, AND METHOD FOR REDUCING GRID FREQUENCY VARIATION

      
Application Number 17155557
Status Pending
Filing Date 2021-01-22
First Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yin, Songhao

Abstract

A grid connected inverter is connectable to a power grid having a synchronous generator connected thereto, and is operable according to an output active power command generated by a virtual synchronous generator control function, to thereby reduce grid frequency variation. The output active power command is represented by a sum of a set value of the output active power of the grid connected inverter, a value obtained by multiplying a pseudo attenuation coefficient to a frequency deviation between a grid frequency and a reference frequency, and a value obtained by multiplying a pseudo inertia coefficient to a derivative value of the grid frequency. The pseudo inertia coefficient after the grid frequency reaches a maximum point of frequency variation is adjusted to a value smaller than the pseudo inertia coefficient before the grid frequency reaches the maximum point of frequency variation.

IPC Classes  ?

  • H02H 7/122 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
  • H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
  • H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters, or transformers

26.

SEMICONDUCTOR DEVICE

      
Application Number 17158194
Status Pending
Filing Date 2021-01-26
First Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Nakamata, Yuko

Abstract

A semiconductor device in which a semiconductor element mounted on a laminate substrate and an electrically conductive connection member are sealed with a sealing material, includes: a primer layer in an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member, in which the sealing material includes a first sealing layer which is provided in contact with the primer layer; and a second sealing layer which covers the first sealing layer, the semiconductor device satisfies αp≥α1>α2 in which αp, α1, and α2 represent coefficients of linear thermal expansion of the primer layer, the first sealing layer, and the second sealing layer, respectively, αc≥15×10−6/° C. in which αc represents a composite coefficient of linear thermal expansion of the sealing layers, and Ec≥5 GPa or more in which Ec represents a composite Young's modulus of the sealing layers.

IPC Classes  ?

  • H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
  • H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
  • H01L 23/42 - Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling

27.

SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 17158552
Status Pending
Filing Date 2021-01-26
First Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Fujisawa, Hiroyuki
  • Kinoshita, Akimasa

Abstract

A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an insulating film, first electrodes, a second electrode, and trenches. The first semiconductor regions and the second semiconductor regions are periodically disposed apart from one another in a first direction in which the trenches extend in a stripe pattern.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

28.

SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 17159934
Status Pending
Filing Date 2021-01-27
First Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kumagai, Naoki

Abstract

A silicon carbide semiconductor device, including a semiconductor substrate, and a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions and a plurality of fourth semiconductor regions formed in the semiconductor substrate. The semiconductor device further includes a plurality of trenches penetrating the second, third and fourth semiconductor regions, a plurality of gate electrodes respectively provided via a plurality of gate insulating films in the trenches, a plurality of fifth semiconductor regions each provided between one of the gate insulating films at the inner wall of one of the trenches, and the third semiconductor region and the fourth semiconductor region through which the one trench penetrates. The semiconductor device further includes first electrodes electrically connected to the second, third and fourth semiconductor regions, and a second electrode provided on a second main surface of the semiconductor substrate.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
  • H01L 29/66 - Types of semiconductor device

29.

SEMICONDUCTOR MODULE

      
Application Number JP2021002072
Publication Number 2021/186891
Status In Force
Filing Date 2021-01-21
Publication Date 2021-09-23
Owner FUJI ELECTRIC CO.,LTD. (Japan)
Inventor
  • Tateishi Yoshihiro
  • Asai Tatsuhiko
  • Koyama Takahiro
  • Gohara Hiromichi

Abstract

Provided is a semiconductor module with which it is possible to decrease the flow velocity distribution of refrigerant in a cooling device. The semiconductor module comprises a cooling device provided with: a top plate; a side wall connected to the top plate; a bottom plate opposing the top plate and connected to the side wall; a plurality of polygonal pin fins (94) having one end connected to a rectangular fin region (95) of the face of the top plate facing the bottom plate which is spaced apart from the side wall, the plurality of polygonal pin fins (94) being spaced apart from each other and arranged in a matrix in plan view; a refrigerant entry (41) having a flow path centered at a position (Pi) proximate a part of one long side of the fin region (95) in plan view; and a refrigerant exit (42) having a flow path centered at a position (Po) proximate a part of the other long side of the fin region (95) in plan view. The direction of the matrix of the plurality of pin fins (94) forms an angle to a straight line (IO) connecting the position (Pi) and the position (Po), and the length (L1) of a line segment of the straight line (IO) traversing the fin region (95) is longer than the length (L2) of a short side of the fin region (95).

IPC Classes  ?

  • H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups
  • H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating

30.

POWER CONVERSION DEVICE

      
Application Number JP2021003970
Publication Number 2021/186935
Status In Force
Filing Date 2021-02-03
Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Fukuchi, Shun

Abstract

This power conversion device is provided with: a housing including a protruding heat-dissipating portion protruding on a substrate side to dissipate heat from a heat-generating element, the housing accommodating a substrate and the heat-generating element; and a biasing member disposed between the substrate and a bottom surface of the housing and biasing the heat-generating element toward a first side surface of the protruding heat-dissipating portion of the housing.

IPC Classes  ?

  • H01L 23/40 - Mountings or securing means for detachable cooling or heating arrangements
  • H05K 7/14 - Mounting supporting structure in casing or on frame or rack
  • H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
  • H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

31.

SHORT CIRCUIT DETERMINATION DEVICE, SWITCH DEVICE AND SHORT CIRCUIT DETERMINATION METHOD

      
Application Number JP2021010428
Publication Number 2021/187437
Status In Force
Filing Date 2021-03-15
Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Matsubara Kunio
  • Kiguchi Ryoga

Abstract

Provided is a short circuit determination device equipped with a sensor for detecting a change over time in a principal current flowing between a first principal terminal and a second principal terminal in a switching element which has a control terminal, the first principal terminal and the second principal terminal, and also equipped with a short circuit determination unit for determining that the switching element has short-circuited when the change over time in the principal current is equal to greater than a first threshold at or later than a first timing which is after a control signal for driving the control terminal is turned on.

IPC Classes  ?

  • H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion

32.

POWER SUPPLY DEVICE AND DETERIORATION DETERMINATION METHOD OF POWER SUPPLY DEVICE

      
Application Number 17159663
Status Pending
Filing Date 2021-01-27
First Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Tsukuta, Motohiro

Abstract

A power supply device includes a controller configured to output, to a power converter, a command value to control at least one of a voltage or a current of power output from the power converter, and acquire a measurement value measured by a measurement unit. The controller is configured to, while power conversion operation is being performed by the power converter, change the command value and determine a deterioration of the power converter based on a mode of a change in the measurement value measured by the measurement unit due to a change in the command value.

IPC Classes  ?

  • G01R 31/42 - AC power supplies
  • H02M 5/458 - Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
  • H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
  • H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only

33.

SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 17161867
Status Pending
Filing Date 2021-01-29
First Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kinoshita, Akimasa

Abstract

A semiconductor device includes an active region through which a main current passes during an ON state. In the active region, the semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, an interlayer insulating film, first electrodes, a second electrode, first trenches, a second trench, a polycrystalline silicon layer provided in the second trench via one of the gate insulating films, and a silicide layer selectively provided in a surface layer of the polycrystalline silicon layer. The polycrystalline silicon layer and the silicide layer are electrically connected with the gate electrodes.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form

34.

SEMICONDUCTOR DEVICE AND OVERCURRENT PROTECTION METHOD

      
Application Number 17184816
Status Pending
Filing Date 2021-02-25
First Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Minagawa, Kei

Abstract

A semiconductor device includes a switching element, a control circuit, and a first and second temperature detectors. The control circuit controls the switching element and have an overcurrent detection circuit for the switching element. The first temperature detector detects the temperature of the switching element and the second temperature detector detects the temperature of the control circuit. The control circuit includes a reference correction circuit for correcting an overcurrent reference value of the overcurrent detection circuit on the basis of a first detection value and a second detection value detected by the first and second temperature detectors and outputting a corrected overcurrent reference value.

IPC Classes  ?

  • H02H 5/04 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
  • H02H 1/00 - EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS - Details of emergency protective circuit arrangements

35.

ELECTRIC CIRCUIT AND SEMICONDUCTOR MODULE

      
Application Number JP2021002005
Publication Number 2021/186888
Status In Force
Filing Date 2021-01-21
Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Ami, Hideo

Abstract

The present invention suppresses electromagnetic radiation noise while suppressing an increase in loss during switching. This electric circuit has an upper arm formed by antiparallel connection of a first switching element (3a) and a first diode element (4a), a lower arm formed by antiparallel connection of a second switching element (3b) and a second diode element (4b), and the upper arm and the lower arm are connected in series. A wiring (F1) that connects the upper arm and the lower arm, and a gate wiring (F2) of the lower arm are placed in proximity in parallel, and the direction of the current flowing in the gate wiring of the lower arm and the direction of reverse recovery current flowing facing the lower arm from the first diode element of the upper arm are the same.

IPC Classes  ?

  • H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups
  • H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

36.

SHORT CIRCUIT FAULT DETECTION DEVICE AND POWER CONVERSION DEVICE

      
Application Number JP2021010877
Publication Number 2021/187534
Status In Force
Filing Date 2021-03-17
Publication Date 2021-09-23
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Takeuchi, Natsuko
  • Matsubara, Kunio
  • Takubo, Hiromu

Abstract

A short circuit fault detection device 100 comprises: a first Rogowski coil 101 that generates a first detection signal S1 corresponding to a load short circuit current, which is a current flowing to a first arm from amongst a plurality of arms 10b due to a load short circuit; a second Rogowski coil 102 that generates a second detection signal S2 corresponding to an arm short circuit current, which is a current flowing to the first arm due to a short circuit of the first arm or of a second arm from amongst the plurality of arms 10; a load short circuit detection circuit 111 that detects a load short circuit on the basis of the first detection signal S1; an arm short circuit detection circuit 112 that detects a short circuit of the first arm or the second arm on the basis of the second detection signal S2; and a short circuit detection circuit 120 that detects a short circuit fault on the basis of an output signal from the arm short circuit detection circuit 112 and an output signal from the load short circuit detection circuit 111.

IPC Classes  ?

  • H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
  • H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
  • H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
  • H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

37.

ACCESSORY DEVICE OF ELECTRICAL APPLIANCE, ELECTRICAL APPLIANCE TO WHICH SAID ACCESSORY DEVICE CAN BE ATTACHED, AND ELECTRICAL APPLIANCE PROVIDED WITH ACCESSORY DEVICE

      
Application Number JP2021002869
Publication Number 2021/186905
Status In Force
Filing Date 2021-01-27
Publication Date 2021-09-23
Owner FUJI ELECTRIC FA COMPONENTS & SYSTEMS CO.,LTD. (Japan)
Inventor Furuhata Yukinari

Abstract

An accessory device (9) is provided with a terminal to which one end of a conductor portion (W1) of a flexible connecting electric wire W can be attached, and includes an element which exerts a prescribed effect on the operation of an electrical appliance (1). The accessory device includes a first engaging portion (27) and a second engaging portion for detachably engaging a fixed surface of the accessory device to a fixing surface of the electrical appliance, wherein the first engaging portion has a common shape, irrespective of the type of electrical appliance, and the second engaging portion is configured from a plurality of engaging portions (28), (29) in positions that differ in accordance with the shape of the fixing surface of the electrical appliance.

IPC Classes  ?

  • H01H 50/04 - Mounting complete relay or separate parts of relay on a base or inside a case

38.

SEMICONDUCTOR MODULE AND WIRE BONDING METHOD

      
Application Number 17188221
Status Pending
Filing Date 2021-03-01
First Publication Date 2021-09-16
Owner Fuji Electric Co., Ltd. (Japan)
Inventor
  • Yamada, Takafumi
  • Yamauchi, Kohei
  • Asai, Tatsuhiko
  • Gohara, Hiromichi

Abstract

A semiconductor module includes at least two semiconductor elements connected in parallel; a control circuit board placed between the at least two semiconductor elements; a control terminal for external connection; a first wiring member that connects the control terminal and the control circuit board; and a second wiring member that connects a control electrode of one of the at least two semiconductor elements and the control circuit board, wherein the second wiring member is wire-bonded from the control electrode towards the control circuit board, and has a first end on the control electrode and a second end on the control circuit board, the first end having a cut end face facing upward normal to a surface of the control electrode and the second end having a cut end face facing sideways parallel to a surface of the control circuit board.

IPC Classes  ?

  • H01L 23/498 - Leads on insulating substrates
  • H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups
  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices

39.

SUPERCRITICAL FLUID POWER GENERATION SYSTEM

      
Application Number JP2020010103
Publication Number 2021/181483
Status In Force
Filing Date 2020-03-09
Publication Date 2021-09-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Nakamura, Jun
  • Kawahara, Yoshitaka

Abstract

The purpose of the present invention is to provide a supercritical fluid power generation system capable of reducing a rapid increase in compression power in a compression device under a driving condition in which a temperature of a radiator comes close to a critical temperature. A supercritical fluid power generation system (1) uses a closed cycle in which a heat receiving facility (10), a turbine (20), a radiator (40), and a compression device (50) are connected to each other by flow paths (81 to 92) and supercritical carbon dioxide is used as a working fluid. The compression device is provided with a low-stage compression unit (52) that compresses supercritical carbon dioxide expanded by the turbine and a high-stage compression unit (53) that compresses the supercritical carbon dioxide compressed by the low-stage compression unit. The radiator cools the supercritical fluid flowing from the low-stage compression unit to the high-stage compression unit.

IPC Classes  ?

  • F01K 7/32 - Steam engine plants characterised by the use of specific types of engine; Plants or engines characterised by their use of special steam systems, cycles or processes; Control means specially adapted for such systems, cycles or processes; Use of withdrawn or exhaust steam for feed-water heating the engines using steam of critical or over-critical pressure

40.

DOOR-CLOSING DEVICE AND METHOD FOR ATTACHING DOOR-CLOSING DEVICE

      
Application Number JP2021002179
Publication Number 2021/181908
Status In Force
Filing Date 2021-01-22
Publication Date 2021-09-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Saito, Izumi
  • Shiroma, Takahiro

Abstract

This door-closing device is provided with: a drive source; and a conversion section that comprises a pinion gear and a rack section which is disposed so as to engage with the pinion gear and which moves linearly due to rotation of the pinion gear, and that converts rotational drive force from the drive source into linear movement in an opening/closing direction of a door body. The conversion section is configured so that one end section of the conversion section in the opening/closing direction and/or another end section of the conversion section in the opening/closing direction can be separated.

IPC Classes  ?

  • E05F 15/635 - Power-operated mechanisms for wings using electrical actuators using rotary electromotors for horizontally-sliding wings operated by push-pull mechanisms, e.g. flexible or rigid rack-and-pinion arrangements
  • B61D 19/00 - Door arrangements specially adapted for rail vehicles
  • B61D 19/02 - Door arrangements specially adapted for rail vehicles for carriages
  • E05F 15/655 - Power-operated mechanisms for wings using electrical actuators using rotary electromotors for horizontally-sliding wings specially adapted for vehicle wings

41.

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

      
Application Number 17158388
Status Pending
Filing Date 2021-01-26
First Publication Date 2021-09-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Tanaka, Masanori

Abstract

A method of manufacturing a semiconductor device, including: preparing a power semiconductor chip, a lead frame having a die pad part and a terminal part integrally connected to the die pad part, and an insulating sheet in a semi-cured state; disposing the power semiconductor chip on a front surface of the die pad part and performing wiring; encapsulating the lead frame and the power semiconductor chip with an encapsulation raw material in a semi-cured state, to thereby form a semi-cured unit, the terminal part projecting from the semi-cured unit, and a rear surface of the die pad part being exposed from a rear surface of the semi-cured unit; pressure-bonding a front surface of the insulating sheet to the rear surface of the semi-cured unit to cover the rear surface of the die pad part; and curing the semi-cured unit and the insulating sheet by heating.

IPC Classes  ?

  • H01L 23/495 - Lead-frames
  • H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
  • H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
  • H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings

42.

NITRIDE SEMICONDUCTOR DEVICE

      
Application Number 17186274
Status Pending
Filing Date 2021-02-26
First Publication Date 2021-09-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Ohuchi, Yuki
  • Ueno, Katsunori

Abstract

A nitride semiconductor device includes a GaN-based semiconductor layer; and an insulating film provided on a first surface of the GaN-based semiconductor layer, the insulating film containing O atoms, and other constituent atoms other than O. An interface between the GaN-based semiconductor layer and the insulating film has a terminating species which terminates a dangling bond of a Ga atom, the terminating species has an outermost electron shell in which one electron is deficient from an allowed number of outermost electrons, and is an atom or molecule having stronger bond to the Ga atom than a H atom, an amount of Ga—O bonds is greater than an amount of bonds between the Ga atoms and the other constituent atoms.

IPC Classes  ?

  • H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/51 - Insulating materials associated therewith

43.

WIRING STRUCTURE AND SEMICONDUCTOR MODULE

      
Application Number 17187620
Status Pending
Filing Date 2021-02-26
First Publication Date 2021-09-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Sato, Tadahiko

Abstract

A lead frame structure for connecting a semiconductor chip to a connection target includes a conductive member electrically connecting the semiconductor chip and the connection target. The conductive member includes a first bonding part having a main surface, disposed on one side of the conductive member and being bonded to the semiconductor chip, a second bonding part having a main surface, being disposed on another side of the conductive member that is spaced from the one side in one direction and being bonded to the connection target, and a joining part having a wall section intersecting the main surface of the first bonding part and the main surface of the second bonding part, the wall section joining a portion of the first bonding part to a portion of the second bonding part.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 23/498 - Leads on insulating substrates

44.

POWER CONVERSION DEVICE

      
Application Number 17332218
Status Pending
Filing Date 2021-05-27
First Publication Date 2021-09-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Nakamori, Akira

Abstract

A power conversion device including a semiconductor switching element having a control electrode terminal and two main electrode terminals and configured to control a current flowing between the two main electrodes by a drive signal applied to the control electrode terminal; and a drive circuit configured to generate the drive signal in synchronization with an input signal and to turn on/off the semiconductor switching element by the drive signal. The drive circuit is configured to detect the current flowing between the two main electrode terminals of the semiconductor switching element at a timing at which the semiconductor switching element is turned off, and to adjust a drive capacity.

IPC Classes  ?

  • H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
  • H03K 17/16 - Modifications for eliminating interference voltages or currents
  • H03K 17/567 - Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
  • H03K 17/081 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit

45.

SEMICONDUCTOR DEVICE

      
Application Number 17332590
Status Pending
Filing Date 2021-05-27
First Publication Date 2021-09-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Terashima, Kenshi

Abstract

A semiconductor device includes a first semiconductor chip including an output electrode portion on a front surface thereof, the output electrode portion including a plurality of electrode regions, each of which is provided at a respective position of the output electrode portion, and a plurality of wires, each electrode region being connected to a different one or more wires among the plurality of wires, through which a respective amount of output current is output. A total number of the different one or more wires connected to each electrode region is set depending on the respective position of the electrode region of the output electrode portion, so that the electrode region has a respective current amount per wire that is equal to or less than a respective predetermined value.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

46.

SUPERCRITICAL FLUID POWER GENERATION SYSTEM

      
Application Number JP2020011142
Publication Number 2021/181663
Status In Force
Filing Date 2020-03-13
Publication Date 2021-09-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Nakamura, Jun
  • Kawahara, Yoshitaka

Abstract

Provided is a supercritical fluid power generation system that can achieve both high system efficiency and the suppression of an increase in equipment cost. The supercritical fluid power generation system (1) includes: a heat source (11); a turbine (31), a supercritical fluid power generation unit (30) provided with a turbine (31), a cooler (33), and a compressor (34) and using a closed cycle using supercritical carbon dioxide as a working fluid; and an intermediate heat medium circulation unit (50) that circulates a liquid molten salt that is heated by a high-temperature gas (13) heated by a heat source. The intermediate heat medium circulation unit includes a heat recovery heat exchanger (51) that exchanges heat between the hot gas and the molten salt, and an intermediate heat exchanger (52) that exchanges heat between the molten salt and supercritical carbon dioxide.

IPC Classes  ?

  • F01K 7/32 - Steam engine plants characterised by the use of specific types of engine; Plants or engines characterised by their use of special steam systems, cycles or processes; Control means specially adapted for such systems, cycles or processes; Use of withdrawn or exhaust steam for feed-water heating the engines using steam of critical or over-critical pressure
  • F01K 25/10 - Plants or engines characterised by use of special working fluids, not otherwise provided for; Plants operating in closed cycles and not otherwise provided for using special vapours the vapours being cold, e.g. ammonia, carbon dioxide, ether

47.

DOOR-CLOSING DEVICE

      
Application Number JP2021002061
Publication Number 2021/181903
Status In Force
Filing Date 2021-01-21
Publication Date 2021-09-16
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Shiroma, Takahiro
  • Terasaki, Tomio

Abstract

A regulating part of this door-closing device includes a shaft-driving part that causes a pin-holding member to move in a direction of separating from a position where a pin member and a door-body-securing part engage, and a cushioning part that cushions impact from a collision between components included in the regulating part when a locked state of a door body is released as the pin member is moved in the separation direction.

IPC Classes  ?

  • B61D 19/00 - Door arrangements specially adapted for rail vehicles
  • B61D 19/02 - Door arrangements specially adapted for rail vehicles for carriages
  • E05B 77/38 - Cushion elements, elastic guiding elements or holding elements, e.g. for cushioning or damping the impact of the bolt against the striker during closing of the wing
  • E05B 83/36 - Locks for passenger or like doors
  • E05F 15/635 - Power-operated mechanisms for wings using electrical actuators using rotary electromotors for horizontally-sliding wings operated by push-pull mechanisms, e.g. flexible or rigid rack-and-pinion arrangements

48.

ELECTROMAGNETIC CONTACTOR

      
Application Number JP2021002870
Publication Number 2021/181927
Status In Force
Filing Date 2021-01-27
Publication Date 2021-09-16
Owner FUJI ELECTRIC FA COMPONENTS & SYSTEMS CO.,LTD. (Japan)
Inventor
  • Kawashima Shigenori
  • Furuhata Yukinari
  • Fukaya Naoki
  • Takaya Kouetsu

Abstract

The present invention is an electromagnetic contactor (1) provided with: a case (3) having an arc extinction chamber (14); an arc extinction cover (8) which is mounted on the case and covers the arc extinction chamber; and terminal covers (7a) and (7b) which are disposed on the arc extinction cover and are mounted on the case. A first engagement section (17) is formed on the case, and a second engagement section (40), which engages the first engagement section thereby resulting in the terminal covers being held to the case, is formed on the terminal covers. The terminal covers are held to the case in either a first state, in which there is a gap between the first engagement section and the second engagement section, or a second state, in which the terminal covers move in a direction away from the arc extinction cover and the first engagement section and the second engagement section engage.

IPC Classes  ?

49.

EXHAUST GAS TREATMENT DEVICE AND LIQUID DISCHARGE UNIT

      
Application Number JP2021002334
Publication Number 2021/176880
Status In Force
Filing Date 2021-01-22
Publication Date 2021-09-10
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Watanabe Kenji
  • Hayashi Kazuki

Abstract

Provided is an exhaust gas treatment device provided with: a reaction tower having an exhaust gas introduction port to which an exhaust gas is introduced, an exhaust gas discharge port from which the exhaust gas is discharged, and a liquid spray part that is disposed between the exhaust gas introduction port and the exhaust gas discharge port, the reaction tower having supplied thereto a liquid for treating the exhaust gas; a discharge part which is disposed above the liquid spray part and from which the liquid is discharged; and a discharge pipe which is connected to the discharge part and from which the liquid discharged by the discharge part is discharged. At the liquid spray part, the liquid is sprayed inside the reaction tower. The discharge part has an internal tube section, an external tube section that encircles the internal tube section, and a bottom section that connects the internal tube section and the external tube section. The discharge part discharges the liquid to between the internal tube section and the external tube section and in a discharge space above the bottom section. The discharge pipe has a liquid passage part which penetrates through the external tube section to be connected to the discharge space and through which the liquid passes. At least a portion of the liquid passage part that penetrates through the external tube section is disposed below the top surface of a main portion of the bottom section.

IPC Classes  ?

  • B01D 53/50 - Sulfur oxides
  • B01D 53/18 - Absorbing units; Liquid distributors therefor
  • B01D 53/78 - Liquid phase processes with gas-liquid contact
  • B01D 53/92 - Chemical or biological purification of waste gases of engine exhaust gases

50.

POWER CONVERSION DEVICE

      
Application Number JP2021003936
Publication Number 2021/176934
Status In Force
Filing Date 2021-02-03
Publication Date 2021-09-10
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Suzuki, Yuji
  • Hori, Motohito
  • Toba, Akio
  • Sato, Ikuya
  • Tanaka, Yasuhito
  • Iwasaki, Masamichi
  • Ajima, Masaaki
  • Ohguri, Nobuaki

Abstract

A power conversion device comprising: a capacitor; a substrate on which a plurality of switching elements for power conversion are mounted; a cooler that cools the plurality of switching elements; a housing that accommodates the capacitor, the substrate, and the cooler; a power-supply connector that is exposed on the housing; an output connector that is exposed on the housing; and a plurality of wires that include a plurality of power-supply wires electrically connected to the capacitor, the plurality of switching elements, and the power-supply connector, and a plurality of output wires electrically connected to the plurality of switching elements and the output connector, wherein at least one among the plurality of wires is a wire that includes a conductive pattern formed on the substrate.

IPC Classes  ?

  • H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

51.

SEMICONDUCTOR DEVICE, METHOD FOR MANUFATURING SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE EQUIPPED WITH SEMICONDUCTOR DEVICE

      
Application Number JP2021008535
Publication Number 2021/177422
Status In Force
Filing Date 2021-03-04
Publication Date 2021-09-10
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kato Yoshiharu
  • Sakurai Yosuke
  • Noguchi Seiji
  • Yoshimura Takashi

Abstract

Provided is a semiconductor device comprising: a semiconductor substrate having a drift region; a buffer region disposed between the drift region and a lower surface and having a doping concentration distribution with three or more concentration peaks; and a collector region disposed between the buffer region and the lower surface. The three or more concentration peaks in the buffer region include a first concentration peak closest to the lower surface, a second concentration peak closest to the lower surface next to the first concentration peak and disposed at a distance of not less than 5 μm from the lower surface in a depth direction, the second concentration peak having a doping concentration lower than the first concentration peak and less than 1.0×1015/cm3, and a high concentration peak more spaced apart from the lower surface than the second concentration peak and having a doping concentration higher than the second concentration peak.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/336 - Field-effect transistors with an insulated gate
  • H01L 21/8234 - MIS technology
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/861 - Diodes
  • H01L 29/868 - PIN diodes

52.

DUST COLLECTOR

      
Application Number JP2021002341
Publication Number 2021/176881
Status In Force
Filing Date 2021-01-22
Publication Date 2021-09-10
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Yamashiro Keisuke
  • Sakuma Yoshihiro
  • Ikeda Jyun

Abstract

This dust collector comprises: a gas pipe through which a gas to be processed flows from an upstream side to a downstream side; a plurality of collection parts which are provided to the gas pipe so as to collect target particles contained in the to-be-processed gas; and a connection electrode which is connected to the plurality of respective collection parts. Each of the plurality of collection parts has a cylindrical outer electrode, through the interior space of which the to-be-processed gas is passed, and an inner electrode which is disposed in the interior space so as to be coaxial with the outer electrode. The plurality of collection parts are arranged in parallel with each other within a cross section of the gas pipe. The connection electrode is connected to the inner electrodes of the plurality of respective collection parts, and is disposed on the downstream side of the collection parts.

IPC Classes  ?

  • B03C 3/41 - Ionising-electrodes
  • B03C 3/40 - Electrode constructions
  • B03C 3/49 - Collecting-electrodes tubular
  • F01N 3/01 - Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust by means of electric or electrostatic separators

53.

POWER CONVERSION DEVICE

      
Application Number JP2021006510
Publication Number 2021/177064
Status In Force
Filing Date 2021-02-19
Publication Date 2021-09-10
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Suzuki, Yuji
  • Hori, Motohito
  • Toba, Akio
  • Sato, Ikuya
  • Tanaka, Yasuhito
  • Iwasaki, Masamichi
  • Ajima, Masaaki
  • Ohguri, Nobuaki

Abstract

This power conversion device comprises a housing accommodating: a capacitor that has a first capacitor electrode and a second capacitor electrode; a positive-electrode busbar that is electrically connected to a positive-electrode terminal and the first capacitor electrode; a negative-electrode busbar that is electrically connected to a negative-electrode terminal and the second capacitor electrode; a plurality of output busbars that are electrically connected to a plurality of output terminals, a plurality of high-side switching elements, and a plurality of low-side switching elements; a cooler that cools the plurality of high-side switching elements, and the plurality of low-side switching elements; a supply tube that supplies refrigerant flowing therein from an inlet to the cooler; and a discharge tube that discharges refrigerant flowing out from the cooler to an outlet. The positive-electrode terminal, the negative-electrode terminal, the plurality of output terminals, the inlet, and the outlet are exposed on the housing. The inlet, the outlet, the supply tube, and the discharge tube are members separate from the housing.

IPC Classes  ?

  • H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

54.

INTEGRATED CIRCUIT AND POWER SUPPLY CIRCUIT

      
Application Number 17329802
Status Pending
Filing Date 2021-05-25
First Publication Date 2021-09-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Sugawara, Takato

Abstract

A power supply circuit that generates an output voltage from an AC voltage inputted thereto. The power supply circuit includes a rectifier circuit rectifying the AC voltage, an inductor receiving a rectified voltage from the rectifier circuit, a transistor controlling an inductor current flowing through the inductor, and an integrated circuit switching the transistor based on the inductor current and the output voltage. The integrated circuit includes a sample-and-hold circuit that samples-and-holds a voltage corresponding to the rectified voltage in a predetermined timing, an output circuit that outputs a limit voltage based on the voltage held by the sample-and-hold circuit, indicating a limit value for limiting the inductor current, and a signal output circuit that receives the limit voltage and a voltage corresponding to the inductor current, to thereby output a signal to turn off the transistor upon determining that a current value of the inductor current exceeds the limit value.

IPC Classes  ?

  • H02M 1/32 - Means for protecting converters other than by automatic disconnection
  • H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
  • H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters

55.

SEMICONDUCTOR DEVICE

      
Application Number 17159718
Status Pending
Filing Date 2021-01-27
First Publication Date 2021-09-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kinoshita, Akimasa

Abstract

A semiconductor device, including a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, provided on the semiconductor substrate and having an impurity concentration lower than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type, selectively provided on the first semiconductor layer, a plurality of first semiconductor regions of the first conductivity type, selectively provided in the second semiconductor layer at a surface thereof, a plurality of gate insulating films in contact with the second semiconductor layer, a plurality of gate electrodes respectively provided on the gate insulating films, a plurality of first electrodes provided on the second semiconductor layer and the first semiconductor regions, and a second electrode provided on a back surface of the semiconductor substrate. The semiconductor substrate contains boron, a concentration of the boron therein being in a range from 5×1015/cm3 to 5×1016/cm3.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form

56.

SEMICONDUCTOR MODULE

      
Application Number 17185953
Status Pending
Filing Date 2021-02-25
First Publication Date 2021-09-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kato, Ryoichi
  • Murata, Yuma
  • Kanai, Naoyuki
  • Nakagome, Akito
  • Ikeda, Yoshinari

Abstract

A semiconductor module includes a first semiconductor element and a second semiconductor element each having an upper-surface electrode and a lower-surface electrode, and being connected in parallel to configure an upper arm, a first conductive layer having a U-shape in planar view, having two end portions, and having an upper surface on which the first semiconductor element and the second semiconductor element are disposed in a mirror image arrangement, a positive electrode terminal having a body part and at least two positive electrode ends branched from the body part, and a negative electrode terminal having a negative electrode end disposed between the positive electrode ends. The positive electrode ends are respectively connected to one of the two end portions of the first conductive layer.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

57.

SEMICONDUCTOR MODULE

      
Application Number 17187668
Status Pending
Filing Date 2021-02-26
First Publication Date 2021-09-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kato, Ryoichi
  • Murata, Yuma
  • Kanai, Naoyuki
  • Nakagome, Akito
  • Ikeda, Yoshinari

Abstract

A semiconductor module includes first to fourth semiconductor elements, each having an upper-surface electrode and a lower-surface electrode, first to fourth conductive layers, each extending in a first direction and being independently disposed side by side in a second direction orthogonal to the first direction, and an output terminal connected to the second and third conductive layers. The lower-surface electrodes of each of the first to fourth semiconductor elements are respectively conductively connected to the first to fourth conductive layers. The third conductive layer and the fourth conductive layer are disposed between the first conductive layer and the second conductive layer and are connected to the output terminal to have an equal potential.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 23/498 - Leads on insulating substrates

58.

TRIMMING CIRCUIT AND TRIMMING METHOD

      
Application Number 17235956
Status Pending
Filing Date 2021-04-21
First Publication Date 2021-09-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Iwamizu, Morio

Abstract

A trimming circuit configured to output a voltage according to the presence or absence of disconnection of a fuse resistor is provided, including a fuse resistor formed by a polysilicon layer arranged on a semiconductor substrate via an insulating film, a pad for trimming connected to one end of the fuse resistor, an output terminal electrically connected to a connection point between the fuse resistor and the pad, and configured to output a voltage according to the presence or absence of disconnection of the fuse resistor, and a diode formed on the semiconductor substrate, having one end connected to the other end of the fuse resistor.

IPC Classes  ?

  • H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
  • H01L 29/868 - PIN diodes
  • H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
  • H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

59.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 17331013
Status Pending
Filing Date 2021-05-26
First Publication Date 2021-09-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Hokazono, Hiroaki
  • Kato, Ryoichi

Abstract

A semiconductor device includes: a first semiconductor chip having a metal layer on a top surface; a first wiring member arranged to face the metal layer; a sintered-metal layer arranged between the metal layer and the first wiring member, having a first region and a plurality of second regions provided inside the first region, the second regions having lower tensile strength than the first region; and a metallic member arranged inside the sintered-metal layer, wherein the second regions of the sintered-metal layer have lower tensile strength than the metal layer of the first semiconductor chip.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups
  • H01L 23/373 - Cooling facilitated by selection of materials for the device
  • H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
  • H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices

60.

SEMICONDUCTOR DEVICE

      
Application Number 17161931
Status Pending
Filing Date 2021-01-29
First Publication Date 2021-09-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Hoshi, Yasuyuki

Abstract

A semiconductor device includes a first MOS structure portion that includes, as its elements, a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first second-semiconductor-layer of a second conductivity type, first semiconductor regions of the first conductivity type, and first gate insulating films, and a second MOS structure portion that includes, as its elements, the substrate, the first semiconductor layer, a second second-semiconductor-layer, second first-semiconductor-regions of the first conductivity type, and second gate insulating films. First and second portions include all of the elements of the first and second MOS structure portions other than the first and second first-semiconductor-regions and the first and second gate insulating films, respectively. A structure of one of the elements of the first portion is not identical to a structure of a corresponding element of the second portion.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched

61.

SEMICONDUCTOR MODULE

      
Application Number 17185931
Status Pending
Filing Date 2021-02-25
First Publication Date 2021-09-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Murata, Yuma
  • Kato, Ryoichi
  • Kanai, Naoyuki
  • Nakagome, Akito
  • Ikeda, Yoshinari

Abstract

A semiconductor module includes a case with a side wall in a first direction in which gate and source terminals are embodied and exposed therefrom, first and second semiconductor elements each having gate and source electrodes, gate and source relay layers positioned at a center between the first and second semiconductor elements in the first direction at a side of the semiconductor elements farther from the side wall, first gate and source wires respectively connecting the gate and source terminals to the gate and source relay layers, second gate and source wires, and third gate and source wires, respectively connecting the gate and source electrodes of the first semiconductor element, and the gate and source electrode of the second semiconductor element, to the gate and source relay layers. The first to third source wires are respectively located closer to the first to third gate wires than any other gate wires.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

62.

SEMICONDUCTOR MODULE

      
Application Number 17187646
Status Pending
Filing Date 2021-02-26
First Publication Date 2021-09-09
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kato, Ryoichi
  • Murata, Yuma
  • Kanai, Naoyuki
  • Nakagome, Akito
  • Ikeda, Yoshinari

Abstract

A semiconductor module includes an insulating substrate having a main wiring layer, positive and negative electrode terminals adjacently arranged in a first direction, a plurality of semiconductor elements forming a first column and another plurality of semiconductor elements forming a second column, each semiconductor element having gate and source electrode on an upper surface thereof, and being disposed on the main wiring layer such that corresponding ones of the gate electrodes in the first and second columns face each other in a second direction orthogonal to the first direction, a control wiring substrate between the first and second columns and having gate and source wiring layers, a gate wiring member connecting ones of the gate electrodes in the first and second columns through the gate wiring layer, and a source wiring member connecting ones of the source electrodes in the first and second columns through the source wiring layer.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 23/498 - Leads on insulating substrates
  • H05K 1/02 - Printed circuits - Details
  • H05K 1/14 - Structural association of two or more printed circuits

63.

SEMICONDUCTOR MODULE

      
Application Number 17140757
Status Pending
Filing Date 2021-01-04
First Publication Date 2021-09-02
Owner Fuji Electric Co., Ltd. (Japan)
Inventor Nakano, Hayato

Abstract

A semiconductor module includes a substrate on which first, second, and third circuit boards that are electrically isolated from each other are formed; a semiconductor element arranged on the first circuit board; a connecting member that bridges an upper surface electrode of the semiconductor element and the second circuit board so as to electrically connect the upper surface electrode to the second circuit board; a wire that electrically connects the third circuit board to a first electrode that is located outside of where the first, second and third circuit boards are located in a plan view; and a sealing resin that covers and seals the substrate, the semiconductor element, the connecting member, and the wire, wherein the wire is wired from the third circuit board to the first electrode so as to cross the semiconductor element at a vertical position lower than an upper surface of the connecting member.

IPC Classes  ?

  • H01L 23/498 - Leads on insulating substrates
  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

64.

CONTROL CIRCUIT AND POWER SOURCE CIRCUIT

      
Application Number 17159053
Status Pending
Filing Date 2021-01-26
First Publication Date 2021-09-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yaguchi, Yukihiro

Abstract

A control circuit for controlling an output transistor for outputting power includes: a ramp terminal connected to a ramp resistance; a ramp waveform generation unit for generating a ramp waveform including a slope corresponding to a resistance value of the ramp resistance; an output control unit for controlling at least one of an ON time or an OFF time of the output transistor based on a comparison result between the ramp waveform and a comparison voltage; and a state detection unit for detecting a state of the ramp resistance connected to the ramp terminal, wherein the output control unit turns the output transistor to an OFF state regardless of the comparison result, when the state of the ramp resistance becomes a predetermined state.

IPC Classes  ?

  • G01R 27/08 - Measuring resistance by measuring both voltage and current
  • G05F 3/26 - Current mirrors
  • H03K 4/48 - Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
  • G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
  • G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof

65.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 17161908
Status Pending
Filing Date 2021-01-29
First Publication Date 2021-09-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kodama, Naoko

Abstract

A method of manufacturing a semiconductor device, including preparing a semiconductor wafer having first and second main surfaces opposite to each other, forming a photoresist film on the first main surface of the semiconductor wafer, forming a plurality of openings at predetermined positions in the photoresist film, cleaning the semiconductor wafer with water after the openings are formed, drying the semiconductor wafer by rotating the semiconductor wafer around a center axis that is orthogonal to the first main surface of the semiconductor wafer, to thereby generate a centrifugal force to cause the water that is left in the openings of the photoresist film to fly off the semiconductor wafer, and ion-implanting a predetermined impurity by a predetermined acceleration energy from the first main surface of the semiconductor wafer, using the photoresist film as a mask, after the drying. The drying process includes setting a rotational speed of the semiconductor wafer to be at most an upper limit value.

IPC Classes  ?

  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
  • H01L 21/311 - Etching the insulating layers
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/66 - Types of semiconductor device

66.

ELECTROPHOTOGRAPHIC PHOTOCONDUCTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTROPHOTOGRAPHIC DEVICE

      
Application Number 17162334
Status Pending
Filing Date 2021-01-29
First Publication Date 2021-09-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Suzuki, Shinjiro
  • Zhu, Fengqiang
  • Takeuchi, Masaru
  • Hasegawa, Tomoki

Abstract

Provided are an electrophotographic photoconductor being resistant to abrasion even in long-term use, having highly sensitive electric characteristics, being capable of maintaining a high retention rate, and being capable of providing a stable image without filming, a method of manufacturing the same, and an electrophotographic device. The photoconductor includes an electroconductive substrate (1), a charge generation layer (3), and a charge transport layer (4); the charge transport layer contains a hole transport material, a resin binder, an electron transport material, and an inorganic oxide; the charge generation layer contains a charge generation material; the masses of the hole transport material, the resin binder, the electron transport material, and the inorganic oxide in the charge transport layer respectively denoted by a to d satisfy 1.5≤b/a≤5.7, 0.005≤c/a≤0.35, 0.05≤d/a≤0.70, a≥c+d, and c/d≥0.01; the hole transport material contains a compound expressed by formula (A-1); and the charge generation material contains titanyl phthalocyanine having an exothermic peak at 251±5° C., a half-value width of the exothermic peak equal to or less than 15° C., and a heating value equal to or greater than 1.0 mJ/mg when a temperature rise condition is 20° C./min in differential scanning calorimetry, and having an X-ray diffraction peak at 27.2±0.3°. Provided are an electrophotographic photoconductor being resistant to abrasion even in long-term use, having highly sensitive electric characteristics, being capable of maintaining a high retention rate, and being capable of providing a stable image without filming, a method of manufacturing the same, and an electrophotographic device. The photoconductor includes an electroconductive substrate (1), a charge generation layer (3), and a charge transport layer (4); the charge transport layer contains a hole transport material, a resin binder, an electron transport material, and an inorganic oxide; the charge generation layer contains a charge generation material; the masses of the hole transport material, the resin binder, the electron transport material, and the inorganic oxide in the charge transport layer respectively denoted by a to d satisfy 1.5≤b/a≤5.7, 0.005≤c/a≤0.35, 0.05≤d/a≤0.70, a≥c+d, and c/d≥0.01; the hole transport material contains a compound expressed by formula (A-1); and the charge generation material contains titanyl phthalocyanine having an exothermic peak at 251±5° C., a half-value width of the exothermic peak equal to or less than 15° C., and a heating value equal to or greater than 1.0 mJ/mg when a temperature rise condition is 20° C./min in differential scanning calorimetry, and having an X-ray diffraction peak at 27.2±0.3°.

IPC Classes  ?

  • G03G 5/047 - Photoconductive layers characterised by having two or more layers or characterised by their composite structure characterised by the charge-generation layers or charge-transporting layers
  • G03G 5/06 - Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
  • G03G 5/05 - Organic bonding materials; Methods for coating a substrate with a photoconductive layer; Inert supplements for use in photoconductive layers

67.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

      
Application Number 17320115
Status Pending
Filing Date 2021-05-13
First Publication Date 2021-09-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yoshida, Soichi

Abstract

A semiconductor device includes a semiconductor substrate, a transistor section, a diode section, and a boundary section provided between the transistor section and the diode section in the semiconductor substrate. The transistor section has gate trench portions which are provided from an upper surface of the semiconductor substrate to a position deeper than that of an emitter region, and to each of which a gate potential is applied. An upper-surface-side lifetime reduction region is provided on the upper surface side of the semiconductor substrate in the diode section and a partial region of the boundary section, and is not provided in a region that is overlapped with the gate trench portion in the transistor section in a surface parallel to the upper surface of the semiconductor substrate.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
  • H01L 21/8234 - MIS technology
  • H01L 29/868 - PIN diodes
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 29/861 - Diodes
  • H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections

68.

SEMICONDUCTOR DEVICE

      
Application Number 17137643
Status Pending
Filing Date 2020-12-30
First Publication Date 2021-09-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Hoshi, Yasuyuki

Abstract

A semiconductor device having, in a plan view thereof, an active region and a termination region that surrounds a periphery of the active region. The device includes a semiconductor substrate containing a wide bandgap semiconductor, a first-conductivity-type region provided in the semiconductor substrate, spanning from the active region to the termination region, a plurality of second-conductivity-type regions provided between the first-conductivity-type region and the first main surface of the semiconductor substrate in the active region, a first electrode provided on a first main surface of the semiconductor substrate and electrically connected to the second-conductivity-type regions, a second electrode provided on the second main surface of the semiconductor substrate and electrically connected to the first-conductivity-type region, and a lifetime killer region provided in the first-conductivity-type region and spanning from the active region to the termination region. In the active region, pn junctions between the first-conductivity-type region and the second-conductivity-type regions form a vertical semiconductor device element.

IPC Classes  ?

  • H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions

69.

BEVERAGE SUPPLY DEVICE AND RELEARNED MODEL GENERATION SYSTEM

      
Application Number JP2020047871
Publication Number 2021/171762
Status In Force
Filing Date 2020-12-22
Publication Date 2021-09-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Mochida, Yukihide
  • Erikawa, Hajime

Abstract

The purpose of the present invention is to provide a beverage supply device and a relearned model generation system that make it possible to increase accuracy in determining a learned model itself for beverage information determination for determining beverage information of a cup. For this purpose, the beverage supply device is provided with: a determination unit 40a that inputs a captured image to be determined to determine beverage information of a cup C using a learned model M for beverage information determination obtained by performing supervised learning with a captured image of which the determination result of the beverage information of the cup C is known as teacher data; an output control unit 40c that, when the beverage information determined by the determination unit 40a is unclear or uncertain, stores the input captured image and associated metadata in a storage unit 41 or outputs the same to an outside, and provides the captured image and the associated metadata stored or output to the outside for relearning of the learned model M; and a beverage supply control unit 40b that, when it is determined by the determination unit 40a that the determination of the beverage information is certain, controls generation and supply of a beverage indicated by the certain beverage information.

IPC Classes  ?

  • B67D 1/08 - Apparatus or devices for dispensing beverages on draught - Details

70.

DUST COLLECTOR

      
Application Number JP2021002344
Publication Number 2021/171856
Status In Force
Filing Date 2021-01-22
Publication Date 2021-09-02
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Murakami Kouhei

Abstract

Provided is a dust collector comprising a dust collection part for collecting particles, a microwave generation part for generating microwaves to be introduced into the dust collection part and burning the particles collected in the dust collection part by the microwaves, and an intensity detection part for detecting the intensity of the microwaves unabsorbed by the particles, wherein the microwave generation part controls the intensity of the microwaves to be introduced into the dust collection part on the basis of the intensity of the microwaves detected by the intensity detection part. The intensity detection part may be provided with: a derivation part for deriving at least a portion of the microwaves unabsorbed by the particles from the dust collection part; a microwave absorber for absorbing the microwaves derived from the dust collection part; and a temperature detection part for detecting the temperature of the microwave absorber.

IPC Classes  ?

71.

COOLING APPARATUS, SEMICONDUCTOR MODULE, AND VEHICLE

      
Application Number 17317776
Status Pending
Filing Date 2021-05-11
First Publication Date 2021-08-26
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Arai, Nobuhide

Abstract

A semiconductor module is provided, where a coolant circulation portion of a cooling apparatus has a first coolant flow channel and a second coolant flow channel arranged so as to sandwich therebetween a fin region in which a cooling fin is provided, and each having two ends in a longitudinal direction, a casing portion of the cooling apparatus includes a first opening provided on an end side corresponding to a first end of the first coolant flow channel and a second opening provided on an end side corresponding to a second end of the second coolant flow channel, the second end and the first end are arranged on the same side of the casing portion, and the first coolant flow channel and the second coolant flow channel are each at least partly provided below the cooling fin.

IPC Classes  ?

  • H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
  • H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 23/495 - Lead-frames
  • H01L 23/498 - Leads on insulating substrates
  • H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
  • H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
  • H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration

72.

DRIVE CAPABILITY SWITCHING CIRCUIT FOR SEMICONDUCTOR ELEMENT AND DRIVE DEVICE FOR SEMICONDUCTOR ELEMENT

      
Application Number JP2020047684
Publication Number 2021/166415
Status In Force
Filing Date 2020-12-21
Publication Date 2021-08-26
Owner FUJI ELECTRIC CO.,LTD. (Japan)
Inventor Terashima Kenshi

Abstract

The purpose of the present invention is to provide a drive capability switching circuit for a semiconductor element and a drive device for a semiconductor element that make it possible to reduce generation loss at the time of switching of a semiconductor element and minimize radiation noise. This IGBT drive capability switching circuit (4) is provided with: a gate voltage detection unit (41) for detecting the voltage level in a mirror period of a gate voltage (Vg) based on a gate signal (Sg) input into an IGBT (22b); and a gate signal switching unit (42) that switches the voltage level of the gate signal (Sg) on the basis of the voltage level detected by the gate voltage detection unit (41).

IPC Classes  ?

  • H03K 17/16 - Modifications for eliminating interference voltages or currents
  • H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

73.

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

      
Application Number 17317785
Status Pending
Filing Date 2021-05-11
First Publication Date 2021-08-26
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kubouchi, Motoyoshi
  • Yoshida, Soichi

Abstract

In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor. The semiconductor device is provided that includes a semiconductor substrate having a first conductivity type drift region, a transistor section provided in the semiconductor substrate, a diode section provided in the semiconductor substrate, a second conductivity type well region exposed at an upper surface of the semiconductor substrate, a temperature sensing unit that is adjacent to the diode section in top view and is provided above the well region, and an upper lifetime control region that is provided in the diode section, at the upper surface side of the semiconductor substrate, and in a region not overlapping with the temperature sensing unit in top view.

IPC Classes  ?

  • H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
  • H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
  • H01L 29/40 - Electrodes
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

74.

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

      
Application Number 17133692
Status Pending
Filing Date 2020-12-24
First Publication Date 2021-08-26
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Mitsuzuka, Kaname
  • Onozawa, Yuichi

Abstract

Provided is a semiconductor device including a semiconductor substrate; a transistor portion provided in the semiconductor substrate; a current sensing portion for detecting current flowing through the transistor portion; an emitter electrode set to an emitter potential of the transistor portion; a sense electrode electrically connected to the current sensing portion; and a Zener diode electrically connected between the emitter electrode and the sense electrode. Provided is a semiconductor device fabricating method including providing a transistor portion in a semiconductor substrate; providing a current sensing portion for detecting current flowing through the transistor portion; providing an emitter electrode set to an emitter potential of the transistor portion; providing a sense electrode electrically connected to the current sensing portion; and providing a Zener diode electrically connected between the emitter electrode and the sense electrode.

IPC Classes  ?

  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/866 - Zener diodes
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/66 - Types of semiconductor device

75.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

      
Application Number 17235954
Status Pending
Filing Date 2021-04-21
First Publication Date 2021-08-26
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Takishita, Hiroshi
  • Yoshimura, Takashi
  • Meguro, Misaki
  • Nemoto, Michio

Abstract

Provided is a semiconductor device, comprising: a semiconductor substrate provided with an N-type region, wherein the N-type region is a region including a center position in a depth direction of the semiconductor substrate; and the N-type region includes an acceptor with a concentration that is a lower concentration than a carrier concentration, and is 0.001 times or more of a carrier concentration at the center position. A semiconductor device can be manufactured by a manufacturing method, comprising: a preparation step configured to prepare a P-type semiconductor substrate; and a first inverting step configured to form an N-type region including a center position in a depth direction of the semiconductor substrate, by implanting an N-type impurity into the P-type semiconductor substrate and performing heat treatment.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

76.

SEMICONDUCTOR DEVICE

      
Application Number JP2021006016
Publication Number 2021/166980
Status In Force
Filing Date 2021-02-17
Publication Date 2021-08-26
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kubouchi Motoyoshi

Abstract

Provided is a semiconductor device comprising: a semiconductor substrate which has a top surface and a bottom surface and in which a first conductivity type bulk donor is distributed throughout the entirety thereof; a first conductivity type high-concentration region which includes a central position in a depth direction of the semiconductor substrate and where the donor concentration is greater than the doping concentration of the bulk donor; and a top surface side oxygen reduced region which is provided to be in contact with the top surface of the semiconductor substrate inside the semiconductor substrate and where the oxygen chemical concentration decreases the closer to the top surface of the semiconductor substrate. The distribution of the oxygen chemical concentration has a maximum value region where the oxygen chemical concentration is at least 50% of a maximum value, a first peak of an impurity chemical concentration is disposed at an end of the high-concentration region in the depth direction, and the first peak may be disposed inside the maximum value region or further toward the top surface of the semiconductor substrate than the maximum value region.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
  • H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
  • H01L 21/336 - Field-effect transistors with an insulated gate
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes
  • H01L 29/868 - PIN diodes

77.

SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 17307648
Status Pending
Filing Date 2021-05-04
First Publication Date 2021-08-19
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Fujimoto, Takumi

Abstract

A silicon carbide semiconductor device includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer, a first semiconductor region, and a gate electrode. Protons are implanted in a first region spanning a predetermined distance from a surface of the semiconductor substrate facing toward the first semiconductor layer, in a second region spanning a predetermined distance from a surface of the first semiconductor layer on the second side of the first semiconductor layer facing toward the semiconductor substrate, in a third region spanning a predetermined distance from a surface of the first semiconductor layer on the first side of the first semiconductor layer facing toward the second semiconductor layer, and in a fourth region spanning a predetermined distance from a surface of the second semiconductor layer on the second side of the second semiconductor layer facing toward the first semiconductor layer.

IPC Classes  ?

  • H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer

78.

SEMICONDUCTOR MODULE

      
Application Number 17134742
Status Pending
Filing Date 2020-12-28
First Publication Date 2021-08-19
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Uezato, Yoshinori

Abstract

A semiconductor module, including a ceramic board, a circuit pattern metal plate formed on a principal surface of the ceramic board, an external connection terminal bonded, via a solder, to the circuit pattern metal plate, and a low linear expansion coefficient metal plate located between the circuit pattern metal plate and the external connection terminal. The circuit pattern metal plate has a first edge portion and a second edge portion, which are opposite to each other and are respectively at a first side and a second side of the circuit pattern metal plate. The low linear expansion coefficient metal plate has a linear expansion coefficient lower than a linear expansion coefficient of the circuit pattern metal plate.

IPC Classes  ?

  • H01L 23/049 - Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
  • H01L 23/373 - Cooling facilitated by selection of materials for the device
  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

79.

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

      
Application Number JP2020048125
Publication Number 2021/161668
Status In Force
Filing Date 2020-12-23
Publication Date 2021-08-19
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Imagawa Tetsutaro

Abstract

Provided is a semiconductor device comprising a transistor portion and a diode portion, said semiconductor device also comprising: a drift region of a first conductivity type provided to a semiconductor substrate; a storage region of the first conductivity type provided more on the front surface side of the semiconductor substrate than the drift region in the transistor portion and the diode portion; and a first lifetime control region provided on the front surface side of the semiconductor substrate in the transistor portion and the diode portion.

IPC Classes  ?

  • H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
  • H01L 21/8234 - MIS technology
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/336 - Field-effect transistors with an insulated gate
  • H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
  • H01L 29/868 - PIN diodes
  • H01L 29/861 - Diodes

80.

SEMICONDUCTOR CIRCUIT DEVICE

      
Application Number JP2020049244
Publication Number 2021/161681
Status In Force
Filing Date 2020-12-28
Publication Date 2021-08-19
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Hoshi, Yasuyuki

Abstract

In the present invention, at least one semiconductor chip (10) of all semiconductor chips (10) mounted on an insulating substrate (80) has, on the front surface thereof, a layout of electrode pads (21a, 21b, 22, 23a, 23b) that is different from other semiconductor chips, and therefore there are at least two layout patterns. The entire layout of the semiconductor chips (10) mounted on the insulating substrate (80) and the layout of the electrode pads (21a, 21b, 22, 23a, 23b) on the front surfaces of the semiconductor chips (10) are determined such that: the length of wiring (96) connecting main semiconductor elements (11) in parallel becomes as short as possible; the resistance component and the reactance component generated by the wiring (96) becomes substantially consistent between the same type of electrode pads (21b) of the plurality of semiconductor chips (10) connected in parallel; or both of the foregoing are satisfied. Due to this configuration, it is possible to suppress vibration of current waveforms between semiconductor devices (20) fabricated on the plurality of semiconductor chips (10).

IPC Classes  ?

  • H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups
  • H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
  • H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
  • H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
  • H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L 21/8234 - MIS technology
  • H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
  • H01L 21/336 - Field-effect transistors with an insulated gate

81.

SEMICONDUCTOR MODULE

      
Application Number 17134857
Status Pending
Filing Date 2020-12-28
First Publication Date 2021-08-19
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Uezato, Yoshinori

Abstract

A semiconductor module includes a ceramic board, a circuit pattern metal plate on a principal surface of the ceramic board, and an external connection terminal including a bonding portion and a conductive portion. The metal plate includes a bonding area at a first surface thereof, and a stress relaxation portion disposed within the bonding area. The bonding portion has a bonding surface, and an edge that is located at a position overlapping an area in which the stress relaxation portion is disposed in a plan view. A solder is disposed between the bonding surface and the bonding area, to bond the external connection terminal to the circuit pattern metal plate.

IPC Classes  ?

  • H01L 23/498 - Leads on insulating substrates
  • H01L 23/15 - Ceramic or glass substrates
  • H01L 23/373 - Cooling facilitated by selection of materials for the device

82.

SEMICONDUCTOR DEVICE TEST METHOD

      
Application Number 17140778
Status Pending
Filing Date 2021-01-04
First Publication Date 2021-08-19
Owner Fuji Electric Co., Ltd. (Japan)
Inventor Yoshida, Mitsuru

Abstract

A method for testing a semiconductor chip that has a pn junction constituting a parasitic diode therein includes: causing probe terminals to be in contact with front surface electrodes of the semiconductor chip; obtaining a temperature of the semiconductor chip by measuring electrical characteristics of the parasitic diode through at least one of the front surface electrodes and a back surface electrode and by referring to prescribed temperature characteristics of the parasitic diode; if the obtained temperature is not within a prescribed tolerance from the predetermined target temperature, heating up the semiconductor chip by applying voltage between one or more of the front surface electrodes and the back surface electrode; and once the obtained temperature increases and reaches the predetermined target temperature within the prescribed tolerance, testing electrical characteristics of the semiconductor chip through the front surface electrodes and the back surface electrode.

IPC Classes  ?

  • G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer

83.

SEMICONDUCTOR DEVICE

      
Application Number 17156787
Status Pending
Filing Date 2021-01-25
First Publication Date 2021-08-19
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Taniguchi, Katsumi

Abstract

A semiconductor device having a base circuit board, a case surrounding the base circuit board to demarcate, in a plan view, an opening area in which the base circuit board is disposed, and a sealing member that seals the base circuit board disposed in the case. The base circuit board includes a metal base substrate, a resin layer formed on the metal base substrate, and a circuit pattern formed on the resin layer. The case has an inner wall surface that faces an outer peripheral side surface of the base circuit board, and that includes a first inner wall portion which is in surface contact with an outer peripheral side surface of the metal base substrate, and a second inner wall portion that is separate from the outer peripheral side surface of the base circuit board, to thereby have a first gap therebetween filled with the sealing member.

IPC Classes  ?

  • H01L 23/053 - Containers; Seals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
  • H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
  • H01L 23/498 - Leads on insulating substrates
  • H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

84.

SEMICONDUCTOR DEVICE

      
Application Number 17134972
Status Pending
Filing Date 2020-12-28
First Publication Date 2021-08-12
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kai, Kenshi
  • Maruyama, Rikihiro

Abstract

A semiconductor device including an insulated circuit board. The insulated circuit board includes an insulating board having an outer edge and a plurality of corners, and a plurality of circuit patterns formed on a front surface of the insulating board. The plurality of circuit patterns have a plurality of outer-edge corners facing the outer edge of the insulating board, among which outer-edge corners corresponding to the corners of the insulating board are smaller in curvature than outer-edge corners that do not correspond to the corners of the insulating board.

IPC Classes  ?

  • H05K 1/05 - Insulated metal substrate
  • H01L 23/498 - Leads on insulating substrates
  • H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
  • H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

85.

BEVERAGE SUPPLY DEVICE

      
Application Number JP2020047870
Publication Number 2021/157227
Status In Force
Filing Date 2020-12-22
Publication Date 2021-08-12
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Mouri, Taichi

Abstract

The purpose of the present invention is to provide a beverage supply device capable of enhancing cup discrimination accuracy on the basis of a captured image of a cup. For this purpose, the beverage supply device is provided with: a mounting part 29 in which a bottom part 29c on which a cup C is mounted extends to a rear wall 27 side of a beverage supply part and that has an extension part 51 not covered with the cup C; an imaging part 60 having an imaging control part that captures an image of the cup C mounted on the mounting part 29 and the extension part 51 from the rear wall 27, captures a correction image within a correction frame reflecting only the extension part 51 within the range of a captured image before capturing the image after the cup C is mounted on the mounting part 29, and performs adjustment on capturing of the image on the basis of the correction image; and a control part that determines a beverage type of the cup C to perform control of beverage supply on the basis of the image captured by the imaging part 60.

IPC Classes  ?

  • B67D 1/08 - Apparatus or devices for dispensing beverages on draught - Details

86.

DETECTION CIRCUIT, SWITCHING CONTROL CIRCUIT, AND POWER SUPPLY CIRCUIT

      
Application Number JP2020047910
Publication Number 2021/157229
Status In Force
Filing Date 2020-12-22
Publication Date 2021-08-12
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Chen, Jian

Abstract

This detection circuit is provided with: a temperature voltage generation circuit that, if a pulse voltage is at a first level, generates a detection voltage corresponding to a temperature on the basis of a prescribed current and, if the pulse signal is at a second level, stops the generation of the detection voltage; and an output circuit that, once the pulse signal has reached the first level and a prescribed length of time has elapsed, outputs a detection signal indicating whether or not the temperature is higher than a prescribed temperature on the basis of the detection voltage until the pulse signal reaches the second level.

IPC Classes  ?

  • G01K 7/01 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using semiconducting elements having PN junctions
  • H02M 3/28 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac

87.

SWITCHING CONTROL CIRCUIT AND POWER SUPPLY CIRCUIT

      
Application Number 17130647
Status Pending
Filing Date 2020-12-22
First Publication Date 2021-08-05
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Sugawara, Takato

Abstract

A power supply circuit having a first capacitor, a transformer including a primary coil having a voltage of the first capacitor applied thereto, a secondary coil and an auxiliary coil, a second capacitor having a voltage from the auxiliary coil applied thereto, a transistor controlling an inductor current flowing through the primary coil, a control circuit outputting a first control signal when supply of the input voltage is unstopped, or is stopped yet a voltage of the second capacitor reaches a first level, and outputting a second control signal thereafter when the voltage of the second capacitor further reaches a second level, a first drive circuit outputting a first drive signal for switching control of the transistor in response to the first control signal, and a second drive circuit outputting a second drive signal for controlling on-resistance of the transistor to discharge the first capacitor, in response to the second control signal.

IPC Classes  ?

  • H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
  • H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
  • H02M 1/14 - Arrangements for reducing ripples from dc input or output

88.

POWER SEMICONDUCTOR MODULE

      
Application Number 17134646
Status Pending
Filing Date 2020-12-28
First Publication Date 2021-08-05
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Fujii, Masanari

Abstract

A power semiconductor module includes a half-bridge circuit having a first power semiconductor element and a second power semiconductor element that are connected in series with each other. The power semiconductor module also includes first to third external terminals, a first wiring member that connects a high-potential-side main electrode of the first power semiconductor element to the first external terminal, a second wiring member that connects a low-potential-side main electrode of the second power semiconductor element to the second external terminal, a third wiring member that connects an output of the half-bridge circuit to a third external terminal, and at least one of a first corrosion sensor disposed in an installation environment of the first wiring member, a second corrosion sensor disposed in an installation environment of the second wiring member, or a third corrosion sensor disposed in an installation environment of the third wiring member.

IPC Classes  ?

  • H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups
  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
  • H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
  • G01N 17/04 - Corrosion probes

89.

SEMICONDUCTOR DEVICE

      
Application Number 17236658
Status Pending
Filing Date 2021-04-21
First Publication Date 2021-08-05
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Nakagawa, Sho

Abstract

A semiconductor device, including a power supply terminal, an output terminal, a ground terminal, an N-channel main MOSFET connected between the power supply terminal and the output terminal, a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof, an internal ground generation circuit which is provided between the power supply terminal and the ground terminal and which generates the internal ground, an N-channel first MOSFET provided between an output terminal of the internal ground generation circuit and the ground terminal, and a low voltage detection circuit which is provided between the power supply terminal and the ground terminal, and which turns on the first MOSFET upon detecting that a voltage between the power supply terminal and the ground terminal drops below a prescribed voltage.

IPC Classes  ?

  • H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
  • H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

90.

SEMICONDUCTOR INTEGRATED CIRCUIT

      
Application Number 17238908
Status Pending
Filing Date 2021-04-23
First Publication Date 2021-08-05
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Toyoda, Yoshiaki

Abstract

A semiconductor integrated circuit includes: a semiconductor base body of a first conductivity-type; a bottom surface electrode to which a first potential is applied, the bottom surface electrode being provided on a bottom surface of the semiconductor base body; a first well of a second conductivity-type to which a second potential lower than the first potential is applied, the first well being provided on a top surface side of the semiconductor base body; a second well of the first conductivity-type provided in the first well; and an edge structure provided in the first well and configured to supply a third potential higher than the second potential to the second well.

IPC Classes  ?

  • H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
  • H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier

91.

SEMICONDUCTOR MODULE AND SEMICONDUCTOR MODULE MANUFACTURING METHOD

      
Application Number 17139065
Status Pending
Filing Date 2020-12-31
First Publication Date 2021-08-05
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kato, Ryoichi
  • Ikeda, Yoshinari
  • Nishizawa, Tatsuo
  • Mochizuki, Eiji

Abstract

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate. The semiconductor module also includes a semiconductor device having a collector electrode arranged on its upper surface, having an emitter electrode and a gate electrode arranged on its lower surface, and bumps respectively bonding the emitter electrode and the gate electrode to an upper surface of the circuit pattern. Each of the bumps is made of a metal sintered material such that the bump is formed to be constricted in its middle portion in a thickness direction orthogonal to a surface of the insulating plate.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
  • H01L 21/50 - Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect

92.

SEMICONDUCTOR MODULE AND SEMICONDUCTOR MODULE MANUFACTURING METHOD

      
Application Number 17141990
Status Pending
Filing Date 2021-01-05
First Publication Date 2021-08-05
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kato, Ryoichi
  • Ikeda, Yoshinari
  • Nishizawa, Tatsuo
  • Hori, Motohito
  • Mochizuki, Eiji

Abstract

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern on an upper surface of the insulating plate and a heat dissipating plate on a lower surface of the insulating plate. The module further includes a semiconductor device having upper and lower surfaces, and including a collector electrode on the device upper surface, an emitter electrode and a gate electrode on the device lower surface, and the emitter electrode and the gate electrode each being bonded to an upper surface of the circuit pattern via a bump, and a block electrode bonded to the collector electrode. The block electrode includes a flat plate portion covering over the semiconductor device, and a pair of projecting portions projecting toward the circuit pattern from both ends of the flat plate portion in a thickness direction orthogonal to a surface of the insulating plate, and being bonded to the circuit pattern.

IPC Classes  ?

  • H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices
  • H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings

93.

PRODUCTION ALLOCATION DETERMINING APPARATUS AND PRODUCTION ALLOCATION DETERMINING METHOD

      
Application Number 17236294
Status Pending
Filing Date 2021-04-21
First Publication Date 2021-08-05
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Kiryu, Satoshi
  • Tange, Yoshio

Abstract

A production allocation determining apparatus is configured to calculate a total supply function model representing a relationship between a total supply quantity and a marginal cost; calculate, based on current supply quantities, change rate constraints, and on capacity upper and lower limits, supply quantity upper and lower limits of the respective producers at a time s; calculate an optimum price based on the total supply function model, a predicted value of a demanded quantity at the time s, and on the supply quantity upper and lower limits; and calculate, based on the supply quantity upper and lower limits, the supply function models, and on the optimum price, optimum supply quantities. Calculation of the supply quantity upper and lower limits, calculation of the optimum price, and calculation of the optimum supply quantities are repeatedly executed from the time s=T to the time s=1.

IPC Classes  ?

  • G06Q 50/06 - Electricity, gas or water supply
  • G06Q 10/06 - Resources, workflows, human or project management, e.g. organising, planning, scheduling or allocating time, human or machine resources; Enterprise planning; Organisational models

94.

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

      
Application Number 17137568
Status Pending
Filing Date 2020-12-30
First Publication Date 2021-07-29
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Kawada, Yasuyuki

Abstract

Before formation of gate insulating films, an oblique ion implantation of oxygen into opposing sidewalls of trenches, from a top of an oxide film mask is performed, forming oxygen ion-implanted layers in surface regions of the sidewalls. A peak position of oxygen concentration distribution of the oxygen ion-implanted layers is inside the oxide film mask. After removal of the oxide film mask, HTO films constituting the gate insulating films are formed. During deposition of the HTO films, excess carbon occurring at the start of the deposition of the HTO films and in the gate insulating films reacts with oxygen in the oxygen ion-implanted layers, thereby becoming an oxocarbon and being desorbed. The oxygen ion-implanted layers have a thickness in a direction orthogonal to the sidewalls at most half of the thickness of the gate insulating films, and an oxygen concentration higher than any other portion of the semiconductor substrate.

IPC Classes  ?

  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L 21/225 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
  • H01L 21/3115 - Doping the insulating layers

95.

ELECTRONIC APPARATUS AND MANUFACTURING METHOD THEREOF

      
Application Number 17141922
Status Pending
Filing Date 2021-01-05
First Publication Date 2021-07-29
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Takizawa, Naoki

Abstract

An electronic device includes a first part, and a circuit plate including a circuit substrate, a plating film made of a plating material and being disposed on a front surface of the substrate. The plating film includes a first part region on which the first part is disposed via a first solder, and a liquid-repellent region extending along a periphery side of the first part region in a surface layer of the plating film, and having a liquid repellency greater than a liquid repellency of the plating film. The liquid-repellent region includes a resist region. The plating film includes a remaining portion between the liquid-repellent region and the front surface of the circuit substrate in a thickness direction of the plating film orthogonal to the front surface. The remaining portion is made of the plating material and is free of the oxidized plating material.

IPC Classes  ?

  • H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
  • H01L 21/50 - Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups
  • H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
  • H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
  • H01L 23/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details of semiconductor or other solid state devices

96.

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD

      
Application Number 17210498
Status Pending
Filing Date 2021-03-24
First Publication Date 2021-07-29
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Yoshida, Soichi

Abstract

Provided is a semiconductor device, comprising a semiconductor substrate; and an emitter electrode provided above an upper surface of the semiconductor substrate; wherein the semiconductor substrate has: a first conductive type drift region; a second conductive type base region provided between the drift region and the upper surface of the semiconductor substrate; a second conductive type contact region with a higher doping concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate; a trench contact of a conductive material provided to connect to the emitter electrode and penetrate the contact region; and a second conductive type high-concentration plug region with a higher doping concentration than the contact region, which is provided in contact with a bottom portion of the trench contact.

IPC Classes  ?

  • H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
  • H01L 29/861 - Diodes

97.

SWITCHING CONTROL CIRCUIT AND SWITCHING CONTROL METHOD

      
Application Number 17211507
Status Pending
Filing Date 2021-03-24
First Publication Date 2021-07-29
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Endo, Yuta
  • Shiroyama, Hironobu
  • Hiasa, Nobuyuki
  • Yamane, Hiroki

Abstract

A switching control circuit for controlling a power supply circuit that includes an inductor to which an input voltage is applied and through which an inductor current flows, and a transistor configured to control the inductor current. The switching control circuit includes first and second error voltage output circuits that output first and second error voltages, based respectively on a feedback voltage corresponding to the output voltage and a reference voltage, and on an error signal corresponding to a difference between the level of the output voltage and a second level, when the power supply circuit is of a non-isolated type and an isolated type, respectively. The switching control circuit further includes a drive circuit that switches the transistor based on the inductor current, and on the first and second error voltage when the power supply circuit is of the non-isolated type and an isolated type, respectively.

IPC Classes  ?

  • H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
  • H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

98.

EXHAUST GAS TREATMENT DEVICE

      
Application Number JP2020045337
Publication Number 2021/149370
Status In Force
Filing Date 2020-12-04
Publication Date 2021-07-29
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Enami Yoshiaki
  • Takahashi Kuniyuki

Abstract

Provided is an exhaust gas treatment device equipped with a tube reactor which has an exhaust gas intake port and an exhaust gas discharge port and to which a liquid for treating exhaust gas is supplied, and further equipped with a spinning part which has an intake end and a discharge end and spins the exhaust gas, wherein: the tube reactor has a liquid spray unit which is provided between the exhaust gas intake port and the exhaust gas discharge port and sprays a liquid inside the tube reactor; the exhaust gas travels through the interior of the tube reactor in a direction toward the exhaust gas discharge port from the exhaust gas intake port while the liquid spray unit spins in a pre-set spinning direction; the exhaust gas travels in the direction from the intake end toward the discharge end; the spinning part spins the exhaust gas in a pre-set spinning direction when viewed in the direction from the intake end toward the discharge end; and the spinning direction of the exhaust gas according to the liquid spray unit and the spinning direction of the exhaust gas according to the spinning part are the same when viewed from the exhaust gas travel direction.

IPC Classes  ?

  • B04C 3/00 - Apparatus in which the axial direction of the vortex remains unchanged
  • B04C 3/06 - Construction of inlets or outlets to the vortex chamber
  • B04C 9/00 - Combinations with other devices, e.g. fans
  • B01D 53/18 - Absorbing units; Liquid distributors therefor
  • B01D 53/50 - Sulfur oxides
  • B01D 53/78 - Liquid phase processes with gas-liquid contact
  • B01D 53/92 - Chemical or biological purification of waste gases of engine exhaust gases
  • F01N 3/04 - Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of liquids
  • F23J 15/00 - Arrangements of devices for treating smoke or fumes

99.

CONTROL SYSTEM AND CONTROL DEVICE FOR ELECTRIC RAILROAD CAR END DOOR

      
Application Number 17104447
Status Pending
Filing Date 2020-11-25
First Publication Date 2021-07-29
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor Ozaki, Satoru

Abstract

A control system for an electrically-operated railroad car end door includes, an actuator, a processor, and a memory storing program instructions that cause the processor to instruct the actuator to begin generating a braking force applied to the railroad car end door in response to an opening of the railroad car end door, and determine whether the railroad car end door is being manually opened by a person based on information related to a state of the railroad car end door while the braking force is being generated.

IPC Classes  ?

  • E05C 17/00 - Devices for holding wings open; Devices for limiting opening of wings or for holding wings open by a movable member extending between frame and wing; Braking devices, stops or buffers, combined therewith
  • B61D 19/02 - Door arrangements specially adapted for rail vehicles for carriages
  • B61D 19/00 - Door arrangements specially adapted for rail vehicles

100.

SEMICONDUCTOR DEVICE HAVING BUFFER STRUCTURE FOR EXTERNAL TERMINALS

      
Application Number 17105070
Status Pending
Filing Date 2020-11-25
First Publication Date 2021-07-29
Owner FUJI ELECTRIC CO., LTD. (Japan)
Inventor
  • Miyasaka, Toshiyuki
  • Hinata, Yuichiro

Abstract

A semiconductor device, including a first board, a second board having a plurality of through holes passing therethrough, and a plurality of external terminals that are respectively press-fitted into the plurality of through holes of the second board, one end portion of each external terminal passing through the corresponding through hole and being fixed to a front surface of the first board. The second board is a printed circuit board that further includes, in a top view thereof, a plurality of support regions, each having one of the plurality of through holes formed therein, and a plurality of buffer regions respectively surrounding the plurality of support regions, each buffer region having at least one buffer hole and at least one torsion portion formed therein, the at least one torsion portion being connected to the support region surrounded by each buffer region.

IPC Classes  ?

  • H05K 1/02 - Printed circuits - Details
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups
  • H05K 1/18 - Printed circuits structurally associated with non-printed electric components
  • H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
  • H05K 3/28 - Applying non-metallic protective coatings
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