Provided are a polycrystalline SiC compact capable of achieving uniform plasma etching when used as electrodes and a method for manufacturing the same. A polycrystalline SiC compact has a major surface in which Wa (0 to 10 mm) is 0.00 to 0.05 m or less, Wa (10 to 20 mm) is 0.13 μm or less, and Wa (20 to 30 mm) is 0.20 μm or less.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
2.
CARBON BLACK AND METHOD FOR PRODUCING CARBON BLACK
A carbon black wherein a nitrogen adsorption specific surface area (N2SA) is 25 to 60 m2/g, a DBP absorption number is 90 to 180 cm3/100 g, a ratio of the nitrogen adsorption specific surface area (N2SA) to an iodine adsorption number (IA) (N2SA/IA) is 1.10×103 to 1.50×103 m2/g, a hydrogen content by NMR is 150 to 250 /g, and ΔD is 260 to 290 cm−1.
Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 Ωcm and, when the diffraction peak strength in a diffraction angle 2θ range of 33-34° in an X-ray diffraction pattern is regarded as “A” and the diffraction peak strength of the SiC(111) plane in the X-ray diffraction pattern is regarded as “B”, then the ratio (A/B) is not more than 0.018.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 Ωcm and, when the peak strength in a wave number range of 760-780 cm−1 in a Raman spectrum is regarded as “A” and the peak strength in a wave number range of 790-800 cm−1 in the Raman spectrum is regarded as “B”, then the peak ratio (A/B) is not more than 0.100.
C30B 28/14 - Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
A carbon black is disclosed which can exert excellent abrasion resistance while suppressing heat generation when incorporated into a rubber composition. A carbon black in which the total number of active sites represented by a product of a full width at half maximum of a Raman scattering peak appearing in a range of 1340 to 1360 cm−1 when an excitation wavelength is 532 nm and a specific surface area when nitrogen gas is adsorbed is 3.60×104 to 8.20×104 (cm−1·m2/g), and when a nuclear magnetic resonance signal of a spin-spin relaxation process observed by a solid echo method is represented by a sum of a first signal and a second signal having a time constant larger than that of the first signal, an amount of hydrogen represented by a signal intensity per unit mass at time 0 of the first signal is 50.0 to 250.0 (/g).
The present invention provides a sintered metal friction material that has excellent wear resistance, heat resistance even at high load and has a higher friction coefficient while maintaining a friction coefficient and wear resistance that are hard to decrease, and has a reduced content of copper of less than 5 mass %. There is provided a sintered metal friction material characterized in that the sintered metal friction material comprises a sintered material of a friction material composition, the friction material composition comprises matrix metals and a friction modifier, the matrix metals comprise following 20 to 40 mass % of iron powder, 20 to 40 mass % of nickel powder, 0.5 to 10 mass % of zinc powder, 0.5 to 5 mass, of tin powder, 0.5 to 4 mass % of copper powder and 0.5 to 5 mass % of sintering assist powder.
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 9/08 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
B22F 9/30 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
C22C 1/05 - Mixtures of metal powder with non-metallic powder
It is intended to provide a carbon black which can confer reinforcing properties and low exothermicity, which are usually incompatible, as well as excellent abrasion resistance, when mixed with a rubber component, and is suitable for tire tread rubber that is used particularly under severe driving conditions.
2.
10, and a crystallite size Lc (004) within a predetermined range, and the proportion of the graphite particle spherical aggregates in which the largest flat graphite particle observed on the outermost surface has a circle equivalent diameter of 2 μm to 12 μm in graphite particle spherical aggregates having a circle equivalent diameter of 10 μm or more when observed by SEM is 80% or more.
Provided is a method for easily producing an oxidized carbon black aqueous dispersion that can highly remove multivalent metal ions and exhibit excellent dispersion stability.
A method for producing an oxidized carbon black aqueous dispersion by successively performing on an aqueous slurry of oxidized carbon black having one or more anionic functional groups on a surface thereof a neutralization step of mixing an alkali metal hydroxide and performing heating/neutralization in the presence of one or more selected from a water-soluble chelating agent and a salt thereof or after mixing an alkali metal hydroxide and performing heating/neutralization, mixing one or more selected from a water-soluble chelating agent and a salt thereof and a separation and removal step of separating and removing a multivalent metal ion chelate complex from a mixed solution obtained at the neutralization step using a separation membrane.
Carbon black is used as a component of a rubber composition, ensures that the resulting rubber exhibits improved processability, is reinforced in an improved manner, and exhibits low heat buildup, and may suitably be used for a rubber member (e.g., tire tread) and the like for which high abrasion resistance is required. The carbon black includes primary particles having an average particle size of 15 to 35 nm, and forms aggregates having a Stokes mode diameter measured using a centrifugal sedimentation method of 140 to 180 nm, and having a spherical shape when observed using a transmission electron microscope.
B60C 1/00 - Tyres characterised by the chemical composition or the physical arrangement or mixture of the composition
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
11.
Process for manufacturing graphite powder for lithium secondary battery negative electrode material
A method for easily producing a graphite powder for use as a lithium secondary battery negative electrode material with small specific surface area while reducing energy consumption, and achieving high graphitization efficiency, includes melt-mixing a coke powder and a carbon precursor binder so that an amount of fixed carbon included in the carbon precursor binder is 5 to 15 parts by mass based on 100 parts by mass of the coke powder, to prepare a mixture, and pressing the mixture to prepare a compact, the coke powder being obtained by heating a green coke powder at 600 to 1450° C. in a non-oxidizing atmosphere, the green coke powder having a cumulative particle size at 50% in a volumetric cumulative particle size distribution of 5 to 50 μm; heating the compact in a non-oxidizing atmosphere to effect carbonization and graphitization to obtain a graphitized compact; and grinding the graphitized compact.
H01M 4/587 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx for inserting or intercalating light metals
C04B 35/52 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbon, e.g. graphite
C04B 35/532 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components containing a carbonisable binder
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
C01B 32/05 - Preparation or purification of carbon not covered by groups , , ,
A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 Ω·cm and 100,000 Ω·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.
C04B 35/565 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbides based on silicon carbide
C23C 16/01 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes on temporary substrates, e.g. on substrates subsequently removed by etching
3/100 g or more, neutralizing 5% or more and less than 50% of the acidic hydroxyl groups with a polyvalent cation, and neutralizing the remainder of the acidic hydroxyl groups with a monovalent cation.
Carbon black includes primary particles having an average particle size of 15 to 40 nm, microprotrusions having an average length of 2 to 10 nm being formed on a surface of the primary particles. A method for producing carbon black includes introducing an oxygen-containing gas and fuel into a fuel combustion zone, mixing and combusting the oxygen-containing gas and the fuel to produce a high-temperature combusted gas stream, introducing a raw material hydrocarbon in a first stage of a raw material introduction zone and introducing the raw material hydrocarbon and an oxygen-containing gas in a second stage of the raw material introduction zone while introducing the high-temperature combusted gas stream into the raw material introduction zone to produce a carbon black-containing gas which is introduced into a reaction termination zone while spraying a coolant.
A method of producing a polyurethane resin-bonded pigment aqueous dispersion includes causing (I) a pigment having a surface acidic group to come in contact with (II) a basic compound having two or more amino groups selected from a primary amino group and a secondary amino group in its molecule in an aqueous medium so that the pigment has an unreacted surface amino group, and causing the pigment to come in contact and react with (III) a polyurethane resin having an isocyanate end group. A polyurethane resin-bonded pigment aqueous dispersion produced by the method exhibits excellent image density, dispersibility, and storage stability.
C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
16.
Process for producing dispersion of surface-treated carbon black powder, and process for producing surface-treated carbon black powder
A method of producing a surface-treated carbon black powder dispersion includes subjecting carbon black fine particles having a volume average particle size of 100 nm to 20 μm to wet granulation and drying by heating to obtain granulated carbon black having a hardness of 12 cN or less and a pH of less than 7, grinding the granulated carbon black to obtain a ground product having a volume average particle size of 20 nm to 20 μm, and subjecting the ground product to wet oxidization in an aqueous medium. The resulting surface-treated carbon black powder dispersion exhibits excellent print density, print quality, discharge stability, and storage stability when used as an inkjet printer aqueous black ink.
A negative electrode material for lithium ion secondary batteries includes core-shell composite particles prepared by covering the surface of a graphite powder with an amorphous carbon powder via a carbide of binder pitch, the graphite powder having an average particle diameter of 5 to 30 μm and an average lattice spacing d(002) of less than 0.3360 nm, and the amorphous carbon powder having an average particle diameter of 0.05 to 2 μm and an average lattice spacing d(002) of 0.3360 nm or more. A method to produce the negative electrode material includes mixing a graphite powder with pitch having a softening point of 70 to 250° C., adding an amorphous carbon powder to the resulting product, kneading the mixture while applying a mechanical impact to soften the pitch and carbonizing the pitch by heat treatment of the mixture at 750 to 2250° C. in a non-oxidizing atmosphere.
B24B 37/04 - Lapping machines or devices; Accessories designed for working plane surfaces
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
Methods are disclosed for providing reduced particle generating silicon carbide. The silicon carbide articles may be used as component parts in apparatus used to process semiconductor wafers. The reduced particle generation during semiconductor processing reduces contamination on semiconductor wafers thus increasing their yield.
An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
B32B 9/04 - Layered products essentially comprising a particular substance not covered by groups comprising such substance as the main or only constituent of a layer, next to another layer of a specific substance
patents
