A solid-state imaging element (1) according to the present disclosure includes a pixel array unit (10) in which a plurality of light receiving pixels (11) is two-dimensionally arranged. Each of the light receiving pixels (11) includes an organic photoelectric conversion unit (61) and another photoelectric conversion unit. The organic photoelectric conversion unit (61) includes a photoelectric conversion layer (63) made of an organic semiconductor material, a first electrode (62) located on a light incident side of the photoelectric conversion layer (63), and a second electrode (65) located on a side opposite to the light incident side of the photoelectric conversion layer (63). The other photoelectric conversion unit is located on a side opposite to the light incident side of the organic photoelectric conversion unit (61), and performs photoelectric conversion in a wavelength region different from a wavelength region of the organic photoelectric conversion unit (61). The second electrode (65) is connected to a connection wiring (51) including a metal wiring (54) made of metal and a transparent wiring (53) made of a transparent conductive film. The metal wiring (54) extends in a horizontal direction from a peripheral portion of the light receiving pixel (11) to a peripheral portion of the pixel array unit (10).
An information processing apparatus according to an embodiment includes: a recognition unit (122) configured to perform recognition processing on the basis of a point cloud output from a photodetection ranging unit (11) using a frequency modulated continuous wave to determine a designated area in a real object, the photodetection ranging unit being configured to output the point cloud including velocity information and three-dimensional coordinates of the point cloud on the basis of a reception signal reflected by an object and received, and configured to output three-dimensional recognition information including information indicating the determined designated area, and a correction unit (125) configured to correct three-dimensional coordinates of the designated area in the point cloud on the basis of the three-dimensional recognition information output by the recognition unit.
G01S 7/48 - RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - Details of systems according to groups , , of systems according to group
G01S 17/42 - Simultaneous measurement of distance and other coordinates
G01S 17/58 - Velocity or trajectory determination systems; Sense-of-movement determination systems
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
A pixel circuit (100) includes a photoelectric conversion circuit (110), an integration capacitor (Cint) and a supplementary circuit (120). The photoelectric conversion circuit (110) generates and outputs a photocurrent (Iphoto). The integration capacitor (Cint) includes a storage electrode (CintS) and a reference electrode (CintR), wherein the reference electrode (CintR) is connected to a first supply potential (VSUP1), and wherein the integration capacitor (Cint) is configured to integrate the photocurrent on the storage electrode (CintS) in an integration period (Tint). The supplementary circuit (120) pre-charges a working node (WN) between the photoelectric conversion circuit (110) and the storage electrode (CintS) to a pre-charge potential (Vpre) that differs from the first supply potential (VSUP1).
H04N 25/709 - Circuitry for control of the power supply
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
4.
THREE-DIMENSIONAL IMAGE CAPTURING ACCORDING TO TIME-OF-FLIGHT MEASUREMENT AND LIGHT SPOT PATTERN MEASUREMENT
An electronic device comprising circuitry configured to disambiguate a first phase delay obtained according to an indirect Time-of-Flight principle to obtain a second phase delay, wherein the circuitry is configured to disambiguate the first phase delay based on a captured spot position.
G01S 17/36 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
G01S 17/46 - Indirect determination of position data
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
5.
COLUMN SIGNAL PROCESSING UNIT AND SOLID-STATE IMAGING DEVICE
A column signal processing unit includes a current control circuit (110) and a feedback circuit (120). The current control circuit (110) is electrically connected between a data signal line (VSL) and a supply reference potential (GND). The feedback circuit (120) is configured to reduce a capacitive load of the data signal line (VSL). A feedback path (121) of the feedback circuit (120) includes a series connection of a feedback capacitor (122) and a delay element (123), wherein the delay element (123) is configured to increase a time delay in the feedback path (121).
The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.
H04N 23/663 - Remote control of cameras or camera parts, e.g. by remote control devices for controlling interchangeable camera parts based on electronic image sensor signals
G02B 7/34 - Systems for automatic generation of focusing signals using different areas in a pupil plane
H04N 23/67 - Focus control based on electronic image sensor signals
H04N 25/13 - Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
H04N 25/704 - Pixels specially adapted for focusing, e.g. phase difference pixel sets
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
A light-receiving device according to an embodiment of the present disclosure includes a pixel array including light-receiving elements provided in respective pixels. The light-receiving elements each include a high electric field region and a photoelectric conversion region. A plurality of the light-receiving elements provided in the respective pixels includes a plurality of types of elements that have temperature regions having high photon detection efficiency (PDE). The temperature regions are different from each other and partially overlap each other.
H04N 23/52 - Elements optimising image sensor operation, e.g. for electromagnetic interference [EMI] protection or temperature control by heat transfer or cooling elements
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
H04N 23/65 - Control of camera operation in relation to power supply
The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion. The present technology is applicable to back-illuminated CMOS image sensors, for example.
A distance measuring device according to the present disclosure includes a luminescence element, a light receiving element, and a substrate. The luminescence element irradiates an object (X) with light. The light receiving element receives light from the luminescence element reflected from the object (X). The luminescence element and the light receiving element are mounted on a substrate. In addition, a bonding wire (W) electrically connecting the light receiving element and the substrate is not disposed on an edge of the light receiving element on a side of the luminescence element.
Provided is an information processing apparatus capable of improving detection accuracy of a position pointed by a target object. An acquisition unit acquires a distance image indicating a distance to each object present within a predetermined range. Subsequently, a vector calculation unit calculates a vector extending from the target object present within the predetermined range in a direction pointed by the target object on the basis of the acquired distance image. Subsequently, an intersection calculation unit calculates a position of an intersection of a predetermined surface present within the predetermined range and the calculated vector on the basis of the acquired distance image. Subsequently, a processing execution unit executes processing corresponding to the calculated position of the intersection.
G06V 10/94 - Hardware or software architectures specially adapted for image or video understanding
G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
G06F 3/0488 - Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser using a touch-screen or digitiser, e.g. input of commands through traced gestures
G06T 7/73 - Determining position or orientation of objects or cameras using feature-based methods
Provided is a display module capable of reducing connection resistance between a mounting board and a display.
Provided is a display module capable of reducing connection resistance between a mounting board and a display.
A display module includes a mounting board provided with a bump, and a display mounted on the mounting board and provided with a connection terminal bonded to the bump by solid-phase diffusion bonding.
An image sensor device includes circuitry configured to: receive an image; run a first neural network configured to detect one or more regions of interest in the image; and run a second neural network configured to determine, based on the image, whether a predetermined event has occurred; wherein when it is determined that the predetermined event has occurred, the image is output; and the circuitry is further configured such that the first neural network initiates obscuring processing to produce an obscured image in which the one or more regions of interest are obscured and the circuitry is configured to output the obscured image when it is determined that the predetermined event has not occurred.
An imaging device having a superior light-shielding property for a charge-holding section is provided. The imaging device includes: an Si {111} substrate extending along a horizontal plane; a photoelectric conversion section provided in the Si {111} substrate and generating charges corresponding to a light reception amount by photoelectric conversion; a charge-holding section provided in the Si {111} substrate and holding charges transferred from the photoelectric conversion section; and a light-shielding section including a horizontal light-shielding part positioned between the photoelectric conversion section and the charge-holding section in a thickness direction and extending along the horizontal plane and a vertical light-shielding part orthogonal thereto. The horizontal light-shielding section includes a first plane along a first crystal plane of the Si {111} substrate of a plane index {111} orthogonal to the thickness direction, and a second plane along a second crystal plane of the Si {111} substrate inclined to the thickness direction.
A non-volatile storage circuit (10) of an embodiment includes a volatile storage unit (11) that stores information, a non-volatile storage unit (20) into which the information in the volatile storage unit is written by a store operation, and from which the information is read out to the volatile storage unit (11) by a restore operation via a restore path different from a store path in the store operation, a driver unit (12, 15) that receives a power supply and performs the store operation, and a switch unit (13, 14, 16, 17) that shuts off the power supply to the driver unit (12, 15) during the restore operation.
G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
The present technology relates to a light source apparatus that makes it possible to provide a widely applicable light source apparatus. A light source apparatus includes a transmissive board that transmits light emitted by a light-emitting element, a circuit board that drives the light-emitting element and is joined to the transmissive board, and a light-emitting board that has the light-emitting element and is connected to the circuit board via a first bump. Further, in the light source apparatus, the circuit board and an organic board are configured to be connected by sandwiching the light-emitting board via second bumps. The present technology can be applied to a light source apparatus that emits light.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
The present technology relates to an electronic circuit board, a base member, electronic equipment, an electronic equipment manufacturing method and an electronic circuit board manufacturing method that make it possible to mount an electronic circuit board easily on a curved surface, for example. An electronic circuit board has a deformable wiring board having a plurality of areas that is long in one direction and is formed to be partially continuous with each other, and the plurality of areas of the wiring board is provided with deformable plate-like plate members that are more rigid than the wiring board. For example, the present technology can be applied to an electronic circuit board on which various devices are mounted.
There is provided a solid-state imaging element capable of increasing a channel area of a pixel transistor and reducing a parasitic capacitance of a gate. A solid-state imaging element is a solid-state imaging element including pixels that photoelectrically convert incident light, and includes a substrate on which the pixels are provided, a first transistor provided in the pixels and including a first gate electrode portion embedded in a first direction from a first surface of the substrate toward a second surface of the substrate opposite to the first surface, a first gate insulating film provided between an active region of the substrate in which a channel of the first transistor is formed and a first side surface of the first gate electrode portion facing the active region, and a first insulating film provided on a second side surface of the first gate electrode portion other than the first side surface and thicker than the first gate insulating film, in which a depth of the first insulating film from the first surface to the second surface of the substrate is substantially the same as or deeper than a depth of the first gate electrode portion, and a width of an upper surface of the first gate electrode portion is wider than a width of a bottom surface of the first gate electrode portion in a cross section in the first direction.
Provided is an optical detection device capable of obtaining an image with higher image quality. The optical detection device includes a plurality of color filters arranged in a two-dimensional array and a substrate including a plurality of photoelectric conversion units on which light passing through the color filters is incident. Then, the optical detection device has a configuration where an angle formed by a light receiving surface of the substrate and color filters (outer color filters) located outside a central portion of the two-dimensional array (color filter array) is different from an angle formed by the light receiving surface of the substrate and a color filter (central portion color filter) located at the central portion such that the outer color filters are inclined toward the central portion relative to the central portion color filter.
A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
A configuration control circuitry for a time-of-flight system, the time-of-flight system including an illumination source configured to emit light to a scene and an image sensor configured to generate image data representing a time-of-flight measurement of light reflected from the scene.
The present disclosure relates to an image sensor and an electronic device capable of further improving performance. An image sensor includes: a photoelectric conversion unit provided for each of a plurality of pixels arranged in a matrix on a sensor surface; a TG transistor that transfers a charge generated by photoelectric conversion in the photoelectric conversion unit to an FD node; and a TGD transistor that transfers a charge generated by photoelectric conversion in the photoelectric conversion unit to an SN node. In addition, at least a part of a predetermined number of the pixels included in an intensity sharing unit that shares and uses the FD node and a predetermined number of the pixels included in an event sharing unit that shares and uses the SN node have different sharing destinations. The present technology can be applied to, for example, an image sensor that detects occurrence of an event and acquires an image.
The present technology relates to a semiconductor device, an imaging device, and a manufacturing method capable of forming a via connected to wirings at different depths so as not to cause a defect.
The present technology relates to a semiconductor device, an imaging device, and a manufacturing method capable of forming a via connected to wirings at different depths so as not to cause a defect.
A plurality of vias is provided, and an aspect ratio defined by a depth and a width of the via is substantially the same in the plurality of vias. The via is connected to the wiring in the wiring layer constituting the chip. The plurality of vias includes a first via that penetrates a chip stacked in the wiring layer and a second via that does not penetrate the chip. The present technology can be applied to, for example, a chip on which a solid-state imaging element is formed and an imaging element in which other chips are stacked.
The present disclosure relates to an information processing system, an information processing method, and an information processing apparatus that obtain a more accurate distance. A first angle detection section detects a first reception angle of a signal in a first apparatus that is received from a transmitter. A second angle detection section detects a second reception angle of the signal in a second apparatus. A distance calculation section calculates distance information regarding a distance to the transmitter according to the first reception angle, the second reception angle, and the inter-apparatus distance between the first apparatus and the second apparatus. The technology according to the present disclosure is applicable, for example, to TWS based on the use of BLE.
To provide an imaging device capable of further suppressing noise in a pixel signal. An imaging device includes: a semiconductor substrate (30) that includes a photoelectric conversion portion (31) configured to photoelectrically convert incident light, or a charge holding portion (32) configured to hold charge photoelectrically converted by the photoelectric conversion portion; a field effect transistor provided on the photoelectric conversion portion, or on the semiconductor substrate near the charge holding portion; a contact plug (26) that extends in a direction normal to one main surface of the semiconductor substrate from a gate electrode (25) of the field effect transistor; and a projecting portion (27) that extends in an in-plane direction of the one main surface of the semiconductor substrate from the contact plug.
The present technology relates to a semiconductor device and an imaging device capable of achieving a configuration that does not hinder downsizing even when a plurality of terminals including terminals with a potential difference is arranged.
The present technology relates to a semiconductor device and an imaging device capable of achieving a configuration that does not hinder downsizing even when a plurality of terminals including terminals with a potential difference is arranged.
A chip, a wiring substrate, and a wire connecting the chip and the wiring substrate are included, and a first opening and a second opening to which the wire is connected are formed on at least one side of the wiring substrate, the one side being on a surface of the wiring substrate on which an insulating film is formed. A first terminal formed in the first opening and a second terminal formed in the second opening are arranged at positions separated by a predetermined distance in the opening. The present technology can be applied to, for example, an imaging device in which a wiring substrate and a chip are connected by a bonding wire.
An imaging device according to an embodiment of the present disclosure includes a first substrate on which a pixel array unit that outputs a pixel signal obtained by photoelectrically converting incident light in a first direction is arranged, and a second substrate on which a memory array unit that outputs a convolution signal indicating a result of a product-sum operation of an input signal based on the pixel signal in a second direction is arranged. The first substrate and the second substrate at least partially overlap each other.
There is provided an imaging device including a pixel array unit (300) configured by arraying, in a row direction and a column direction, a plurality of pixels (304) of five or more types in which wavelength bands of detectable light are different in stages. The plurality of pixels are arrayed such that, at points having any spatial phases on the pixel array unit, mixed spectral characteristics obtained by mixing spectral characteristics of a predetermined number of pixels around the points are substantially same.
A photoelectric conversion device according to an embodiment of the present disclosure includes: a first semiconductor layer in which a transfer transistor is provided; a second semiconductor layer in which a pixel transistor is provided; and a wiring layer in which a gate wiring line coupled to a gate of the transfer transistor is provided. A portion or all of the pixel transistor is disposed, in plan view, in a region between a first gate wiring line and a second gate wiring line. The first gate wiring line is coupled to the gate of the transfer transistor in one of two pixels adjacent to each other. The second gate wiring line is coupled to the gate of the transfer transistor in another of the two pixels adjacent to each other.
Communication apparatus with correct audio signal regeneration are disclosed. In one example, a communication apparatus includes a counter that counts the number of a predetermined reference clock included in one cycle of a divided signal of an audio master clock with a frequency that is equal to a product of a frequency of a sampling clock for sampling of an audio signal and a multiplier on the basis of the audio master clock, a ratio of division of the divided signal and the predetermined reference clock. A packet generator generates a packet including the counted number counted, a bit width of SD (Serial Data) conforming to an I2S standard, the frequency of the sampling clock, the ratio of division of the divided signal to the audio master clock, a frequency ratio of the frequency of the audio master clock to the frequency of the sampling clock, and the SD.
H04L 7/00 - Arrangements for synchronising receiver with transmitter
G10L 19/02 - Speech or audio signal analysis-synthesis techniques for redundancy reduction, e.g. in vocoders; Coding or decoding of speech or audio signals, using source filter models or psychoacoustic analysis using spectral analysis, e.g. transform vocoders or subband vocoders
30.
SOLID-STATE IMAGING APPARATUS AND ELECTRONIC APPARATUS
There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.
An information processing apparatus comprising, at least one first processor configured to carry out a first process on data input from at least one sensor to produce first processed data, a selector configured to select, according to a first predetermined condition, at least one of a plurality of second processes, and at least one second processor configured to receive the first processed data from the at least one first processor and to carry out the selected at least one of the plurality of second processes on the first processed data to produce second processed data, each of the plurality of second processes having a lower processing load than the first process.
G06F 9/50 - Allocation of resources, e.g. of the central processing unit [CPU]
B60W 60/00 - Drive control systems specially adapted for autonomous road vehicles
G01S 13/86 - Combinations of radar systems with non-radar systems, e.g. sonar, direction finder
G01S 13/931 - Radar or analogous systems, specially adapted for specific applications for anti-collision purposes of land vehicles
G06F 9/48 - Program initiating; Program switching, e.g. by interrupt
G06V 10/70 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning
G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects
G06V 10/80 - Fusion, i.e. combining data from various sources at the sensor level, preprocessing level, feature extraction level or classification level
G06V 10/82 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using neural networks
G06V 10/94 - Hardware or software architectures specially adapted for image or video understanding
G06V 10/96 - Management of image or video recognition tasks
G06V 20/58 - Recognition of moving objects or obstacles, e.g. vehicles or pedestrians; Recognition of traffic objects, e.g. traffic signs, traffic lights or roads
The present technology relates to a light detection device and an electronic apparatus capable of increasing sensitivity of a specific pixel. The light detection device includes a pixel array unit in which a plurality of pixels is regularly arranged, the plurality of pixels including a first pixel and a second pixel, the first pixel including at least a photodiode and one or more pixel transistors, the second pixel including at least a photodiode larger in size than the photodiode of the first pixel, in which the pixel transistor in the first pixel is shared by the first pixel and the second pixel. The present technology may be applied to image sensors and the like, for example.
A photodetection device according to the present disclosure includes: a light-receiving section including a light-receiving element, a first switch, a second switch, and a signal generator, the first switch that couples the light-receiving element to a first node by being turned on, the second switch that applies a predetermined voltage to the first node by being turned on, and the signal generator that generates a pulse signal on the basis of a voltage at the first node; a controller that controls operations of the first switch and the second switch; a detector that detects a timing at which the pulse signal is changed, on the basis of the pulse signal; and an output section that outputs a detection signal corresponding to a detection result by the detector when the second switch is turned on.
[Object]
[Object]
Distance information can be acquired with a high degree of accuracy by a simple configuration, and positioning of high reliability is performed.
[Object]
Distance information can be acquired with a high degree of accuracy by a simple configuration, and positioning of high reliability is performed.
[Solving Means]
[Object]
Distance information can be acquired with a high degree of accuracy by a simple configuration, and positioning of high reliability is performed.
[Solving Means]
A communication apparatus includes a phase acquisition unit that acquires a phase characteristic of a frequency in a propagation channel with a different communication apparatus, a distance generation unit that generates distance information in reference to the phase characteristic, and a speed sensor unit that measures a movement speed of a transmission side of the propagation channel, the movement speed being usable for correction of the phase characteristic.
G01S 13/84 - Systems using reradiation of radio waves, e.g. secondary radar systems; Analogous systems wherein continuous-type signals are transmitted for distance determination by phase measurement
A ranging sensor includes a pixel including a photoelectric conversion element, a first storage node and a second storage node that store charge transferred from the photoelectric conversion element, a first transfer gate and a second transfer gate connected to the photoelectric conversion element so as to branch and transfer the charge generated in the photoelectric conversion element to different paths, a third transfer gate connected between the first storage node and the first transfer gate, a fourth transfer gate connected between the second storage node and the second transfer gate, a fifth transfer gate connected between the first storage node and the second transfer gate, and a sixth transfer gate connected between the second storage node and the first transfer gate, the ranging sensor including a transfer gate drive unit that drives each of the first to sixth transfer gates.
An imaging apparatus of the present disclosure includes: a pixel array including a plurality of light-receiving pixels including a first light-receiving pixel, a second light-receiving pixel, and a third light-receiving pixel, each generating a pixel signal in response to a received light amount, in which the first light-receiving pixel, the second light-receiving pixel, and the third light-receiving pixel are arranged in this order in a first direction; and a readout section including a first AD converter that performs AD conversion on the basis of each of the pixel signal generated by the first light-receiving pixel and the pixel signal generated by the third light-receiving pixel, and a second AD converter that performs AD conversion on the basis of the pixel signal generated by the second light-receiving pixel.
Provided are a semiconductor integrated circuit and an imaging device capable of reducing power consumption without complicating a configuration of oscillation control.
Provided are a semiconductor integrated circuit and an imaging device capable of reducing power consumption without complicating a configuration of oscillation control.
A semiconductor integrated circuit includes an oscillator that generates an oscillation signal whose oscillation frequency is discretely adjustable on the basis of a digital control input signal, an oscillation controller that generates the digital control input signal, and an intermittent controller that generates an intermittent control signal and supplies the intermittent control signal to the oscillation controller so that the oscillation controller intermittently updates the digital control input signal.
H03L 7/099 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H04N 25/709 - Circuitry for control of the power supply
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
Provided is a solid-state imaging device capable of obtaining an image with a higher image quality. The solid-state imaging device includes a substrate, a pixel region formed on the substrate and configured such that a plurality of pixels is arrayed therein, a dug structure formed in the pixel region, and a p-type semiconductor region formed in a region adjacent to the dug structure in the substrate. Further, the pixel region is divided into an effective pixel region where effective pixels including photoelectric conversion units not shielded from light are arrayed and an OPB pixel region formed adjacent to the effective pixel region and configured such that light shielding pixels including photoelectric conversion units shielded from light are arrayed therein. In addition, in plan view, the percentage of an area occupied by the dug structure in the OPB pixel region is smaller than the percentage of an area occupied by the dug structure in the effective pixel region.
The present technology provides a surface emitting laser capable of reducing a voltage drop at a tunnel junction.
The present technology provides a surface emitting laser capable of reducing a voltage drop at a tunnel junction.
The present technology provides a surface emitting laser including: first and second multilayer film reflectors (102, 112) laminated together; a plurality of active layers laminated together between the first and second multilayer film reflectors (102, 112); and a tunnel junction (107) disposed between first and second active layers (104, 110) adjacent to each other in a lamination direction among the plurality of active layers, in which the tunnel junction (107) includes an n-type semiconductor layer (107b) and a p-type semiconductor layer (107a) laminated together, and the p-type semiconductor layer (107a) includes first and second p-type semiconductor regions (107a1, 107a2) laminated together.
H01S 5/30 - Structure or shape of the active region; Materials used for the active region
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/32 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
An imaging device comprises a first chip that includes a first semiconductor substrate including a photoelectric conversion region. The first chip includes a first insulating layer including a first multilayer wiring electrically connected to the photoelectric conversion region. The first multilayer wiring includes a first vertical signal line (VSL1) to output a first pixel signal, and a first wiring. The imaging device includes a second chip including a second semiconductor substrate including a logic circuit. The second chip includes a second insulating layer including a second multilayer wiring electrically connected to the logic circuit. The second multilayer wiring includes a second wiring. The first chip and the second chip are bonded to one another, and, in a plan view, the first wiring and the second wiring overlap with at least a portion of the first vertical signal line (VSL1).
To improve the temperature measurement accuracy in a circuit that measures temperature by using an operational amplifier.
To improve the temperature measurement accuracy in a circuit that measures temperature by using an operational amplifier.
An operational amplifier outputs an output voltage corresponding to a difference between terminal voltages of a pair of input terminals. A resistor has one end connected to one of the pair of input terminals. A resistor-side rectification element is connected to another end of the resistor. A terminal-side rectification element is connected to the other one of the pair of input terminals. A switch connects an additional rectification element in parallel with either the resistor-side rectification element or the terminal-side rectification element. A current output section outputs a current corresponding to the output voltage. A difference acquisition section acquires, as temperature data, a difference between a signal corresponding to the current provided when the additional rectification element is not connected to the resistor-side rectification element or the terminal-side rectification element and a signal corresponding to the current provided when the additional rectification element is connected to the resistor-side rectification element or the terminal-side rectification element.
An illumination device for a light detection device, the light detection device including a light detection sensor and an optical lens portion, wherein the illumination device includes a light source configured to emit light to a scene and a light intensity adapting device configured to adapt a light intensity profile of the light emitted by the light source for at least partially providing a uniform light intensity on the light detection sensor of light reflected from the scene and detected by the light detection sensor through the optical lens portion.
An electromagnetic wave detection device including: an electromagnetic wave absorption layer including a low-dimensional electronic material that absorbs an electromagnetic wave; a first electrode provided on a first principal surface of the electromagnetic wave absorption layer; a second electrode provided on a second principal surface of the electromagnetic wave absorption layer, the second principal surface being opposed to the first principal surface; and a read circuit that reads, from the second electrode, a signal generated by thermoelectric conversion of heat generated by the electromagnetic wave absorption layer that has absorbed the electromagnetic wave.
H10N 10/13 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
To provide an imaging device that can suppress color mixing between adjacent pixels. An imaging device includes: a plurality of pixels arranged side by side in a direction parallel to one surface of a semiconductor substrate; an inter-pixel separation part provided on the semiconductor substrate and separating adjacent pixels among the plurality of pixels; a color filter provided on the one surface side of the semiconductor substrate; a plurality of convex lenses provided on the one surface side of the semiconductor substrate with the color filter interposed therebetween and arranged side by side in the direction parallel to the one surface; and a concave lens provided on the one surface side of the semiconductor substrate with the color filter and the plurality of convex lenses interposed therebetween. The inter-pixel separation part includes a same-color pixel separation part arranged between adjacent pixels of the same color among a first color pixel, a second color pixel, and a third color pixel, and a different-color pixel separation part arranged between adjacent pixels of different colors among the first color pixel, the second color pixel, and the third color pixel. The different-color pixel separation part has a trench isolation structure.
The present disclosure relates to an information processing apparatus and an information processing method that enable suppression of an increase in time period in which image quality of a decoded image is degraded due to an error occurring on a reception side when encoded data of a video is transmitted.
The present disclosure relates to an information processing apparatus and an information processing method that enable suppression of an increase in time period in which image quality of a decoded image is degraded due to an error occurring on a reception side when encoded data of a video is transmitted.
Error information that is transmitted, via a second wireless channel, from a reception apparatus that receives encoded data of a video transmitted via a first wireless channel is acquired, the second wireless channel enabling transmission involving lower latency than the first wireless channel, and encoding of the video is controlled on the basis of the error information acquired. The present disclosure can be applied to, for example, an information processing apparatus, an encoding apparatus, a decoding apparatus, electronic equipment, an information processing method, a program, or the like.
H04N 19/166 - Feedback from the receiver or from the transmission channel concerning the amount of transmission errors, e.g. bit error rate [BER]
H04N 19/107 - Selection of coding mode or of prediction mode between spatial and temporal predictive coding, e.g. picture refresh
H04N 19/172 - Methods or arrangements for coding, decoding, compressing or decompressing digital video signals using adaptive coding characterised by the coding unit, i.e. the structural portion or semantic portion of the video signal being the object or the subject of the adaptive coding the unit being an image region, e.g. an object the region being a picture, frame or field
46.
IMAGING APPARATUS AND MANUFACTURING METHOD OF IMAGING APPARATUS
Provided is an imaging apparatus capable of enhancing heat resistance of a color filter and a manufacturing method of the imaging apparatus. An imaging apparatus includes a semiconductor substrate, a color filter provided on one surface side of the semiconductor substrate, and a first sealing material provided on the one surface side, the first sealing material that covers the color filter. The first sealing material includes a material capable of transmitting light of a wavelength band set in advance and having a thermal conductivity of 0.5 W/m·K or less.
To reduce the number of wirings through which transmission and reception are made between chips.
To reduce the number of wirings through which transmission and reception are made between chips.
The solid-state imaging device includes a first substrate including a pixel array unit in which a plurality of pixels is arranged, each of the plurality of pixels including a photoelectric conversion unit, and the first substrate includes a first wiring through which an imaging pixel signal is transmitted, the imaging pixel signal being read from two or more of the pixels arranged in a first direction in the pixel array unit, a second wiring through which a reset voltage for initializing the first wiring is supplied, and a first switching circuit configured to switch whether or not to short-circuit the first wiring and the second wiring.
[Object]
[Object]
To perform serial communication at high speed by combining different communication methods with each other.
[Object]
To perform serial communication at high speed by combining different communication methods with each other.
[Solving Means]
[Object]
To perform serial communication at high speed by combining different communication methods with each other.
[Solving Means]
A communication apparatus includes a communicating unit configured to add identification information identifying a data block to one set of the data block including a serial signal group, the serial signal group being transmitted from a master in synchronism with a clock and complying with SPI (Serial Peripheral Interface), and transmit the one set of the data block to a communication partner apparatus within one frame period of a predetermined communication protocol, or add identification information identifying each of multiple data blocks to the multiple data blocks each including a part of the serial signal group and transmit the multiple data blocks to the communication partner apparatus in multiple frame periods.
The present disclosure suppresses deterioration of white spot and dark current characteristics. A photodetector includes a semiconductor layer having a first surface and a second surface located opposite to each other and provided with an element isolation region on a side of the first surface, a photoelectric converter provided in the semiconductor layer, and a transistor provided adjacent to the photoelectric converter on the side of the first surface of the semiconductor layer across the element isolation region. Then, the element isolation region includes a conductive film provided in a groove on the side of the first surface of the semiconductor layer with the first insulating film interposed therebetween, and a second insulating film provided on the side of the first surface of the semiconductor layer so as to overlap the conductive film.
The present technology relates to an information processing system, an information processing device, and an information processing method that make it possible to reduce labor and time for updating of white lists of a plurality of information processing devices with the same contents.
The present technology relates to an information processing system, an information processing device, and an information processing method that make it possible to reduce labor and time for updating of white lists of a plurality of information processing devices with the same contents.
The information processing system includes a plurality of information processing devices each having connection permission device information including identification information of a connection permission device to which connection by wireless communication is to be permitted. In a case in which predetermined updating is performed for the connection permission device information of a predetermined information processing device from among the plurality of information processing devices, another information processing device from among the plurality of information processing devices acquires contents of the predetermined updating and performs updating for the connection permission device information with the same contents as those of the predetermined updating.
A transmission device according to the present disclosure includes: a driver that transmits a transmission signal including two or more signals; an alternating current signal generator including a phase-locked loop circuit that generates an alternating current signal, the alternating current signal generator being configured to set a phase and frequency of the alternating current signal; an amplifier configured to amplify the alternating current signal generated by the alternating current signal generator and set amplitude of the alternating current signal; and a superimposer that superimposes the alternating current signal amplified by the amplifier on the two or more signals.
H04L 7/033 - Speed or phase control by the received code signals, the signals containing no special synchronisation information using the transitions of the received signal to control the phase of the synchronising-signal- generating means, e.g. using a phase-locked loop
The information processing method includes segment extraction processing and adjustment processing. In the segment extraction processing, a segment corresponding to a label associated with an effect is extracted from a video of a camera (20). In the adjustment processing, an application position of the effect is adjusted according to a change in a posture of the camera (20), which posture is detected by utilization of information including acceleration data, in such a manner that the application position of the effect is not deviated from the extracted segment.
An information processing apparatus (10) includes a first acquisition unit (111), a second acquisition unit (111), and an estimation unit (112). The first acquisition unit (111) acquires first sensing information obtained by capturing an image of a subject using a first sensor (20A) including a single-plate image sensor. The second acquisition unit (111) acquires second sensing information obtained by sensing a direction different from a direction of the first sensor (20A) using second sensor (20B). The estimation unit (112) estimates the spectral reflectance of the subject based on the first sensing information and the second sensing information.
H04N 23/13 - Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with multiple sensors
G06T 7/90 - Determination of colour characteristics
A solid-state image sensor includes a plurality of imaging element blocks 10 each configured from a plurality of imaging elements. Each of the imaging elements includes a first electrode, a charge accumulating electrode arranged in a spaced relation from the first electrode, a photoelectric conversion portion contacting with the first electrode and formed above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion portion. The first electrode and the charge accumulating electrode are provided on an interlayer insulating layer, and the first electrode is connected to a connection portion provided in the interlayer insulating layer.
H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
H10K 19/20 - Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group comprising components having an active region that includes an inorganic semiconductor
H10K 30/30 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
H10K 30/82 - Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
Signal processing is performed using a built-in memory. An imaging apparatus includes: a pixel array unit that includes a plurality of pixels performing photoelectric conversion; a converter that converts an analog pixel signal output from the pixel array unit into digital image data; an image processing unit that performs image processing on the digital image data; and a storage unit that includes a plurality of regions for which a power distribution state is able to be selectively designated, and stores at least the digital image data output by the image processing unit.
A light detection device according to an embodiment of the present disclosure includes: a semiconductor substrate that includes a first surface and a second surface opposed to each other, and includes a pixel array in which a plurality of pixels is disposed in an array; a semiconductor layer that is provided on a side of the first surface of the semiconductor substrate; a light receiver that is provided inside the semiconductor substrate for each of the pixels, and generates carriers corresponding to a received light amount by photoelectric conversion; a multiplier that includes a first conduction-type region and a second conduction-type region sequentially stacked on the side of the first surface, at least the second conduction-type region being provided in the semiconductor layer, and that performs avalanche multiplication on the carriers generated by the light receiver; a first electrode that is provided on the side of the first surface, and is electrically coupled to the light receiver; and a second electrode that is provided on the side of the first surface, and is electrically coupled to the multiplier.
A multiply-accumulate operation device according to an aspect of the present disclosure includes multiple cells each including a transistor and a ferroelectric capacitor that is coupled to a first source and drain terminal of the transistor. The multiple cells are arranged in rows and columns. This multiply-accumulate operation device further includes multiple input wiring lines and multiple output wiring lines. Each unit of one or more of the multiple input wiring lines is assigned to corresponding one of the rows of the multiple cells. The multiple input wiring lines are coupled to the ferroelectric capacitors. Each of the multiple output wiring lines is assigned to corresponding one of the columns of the multiple cells. The multiple output wiring lines are coupled to second source and drain terminals of the transistors. The multiple output wiring lines are each configured to store an amount of electric charge corresponding to a product of capacitance of the ferroelectric capacitor of each of the cells and an input voltage supplied to the input wiring line.
G06F 7/544 - Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using unspecified devices for evaluating functions by calculation
G06N 3/063 - Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
G11C 11/22 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
G11C 11/54 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
58.
IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND IMAGE PROCESSING PROGRAM
Detection of a spectral distribution of a light source is simplified. An image processing device according to the present disclosure includes a specific region detection unit, a chromaticity information detection unit, and a light source spectral information generation unit. The specific region detection unit detects a specific region that is a region of an image of a specific object from an image of a subject to which light from a light source is emitted. The chromaticity information detection unit detects light source color information on the basis of a plurality of image signals of the detected specific region. The light source spectral information generation unit generates light source spectral information, which is information of a spectrum of the light source, on the basis of the detected light source color information.
[Object] To provide a sensor module that makes it possible to suppress generation of resin burrs and improve workability.
[Object] To provide a sensor module that makes it possible to suppress generation of resin burrs and improve workability.
[Solving Means] A sensor module (100) according to an embodiment of the present technology includes a sensor element, a first case (11), a second case (12), and a groove (70). The first case (11) includes an opening end including a first welded region and accommodates therein the sensor element. The second case (12) includes a joining surface (123) including a second welded region (50), the second welded region (50) being welded to the first welded region to form a welded portion. The groove (70) is formed in at least one of the first welded region or the second welded region (50).
A control device (10) according to an embodiment includes an initial write instruction unit (30) and a data write instruction unit (40). The initial write instruction unit (30), before accepting an information write request to a storage device (20) including a plurality of resistance change storage elements each of which stores information by using a difference of the resistance state, outputs to the storage device (20) a write instruction to bring the storage element into a first resistance state. The data write instruction unit (40), upon accepting a write request, outputs to the storage device (20) a write instruction to bring the storage element into the first resistance state or a second resistance state according to the write request.
To control an excess bias to an appropriate value in a light detection device.
To control an excess bias to an appropriate value in a light detection device.
A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.
A delay adjustment circuit according to an embodiment includes: a plurality of delay adjustment units connected in series, each of the plurality of delay adjustment units including one or more first delay elements (102) connected in series that delay an input signal on the basis of a clock, and a first selector (120) that outputs one of the input signal and an output of the first delay element at a last stage among the one or more first delay elements; and an output unit (103, 104, 130a, 130b, 140) that outputs a clock according to an output of the first selector included in a delay adjustment unit at a last stage among the plurality of delay adjustment units, in which each of the plurality of delay adjustment units includes a different number of the first delay elements.
H03K 5/133 - Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active-delay devices
G01S 7/4915 - Time delay measurement, e.g. operational details for pixel components; Phase measurement
H03K 5/156 - Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
Provided is an optical detection device capable of suppressing a fluctuation of a drive starting voltage in a pixel.
Provided is an optical detection device capable of suppressing a fluctuation of a drive starting voltage in a pixel.
The optical detection device according to the present disclosure includes: a semiconductor substrate that has a first surface as a light incident surface and a second surface on an opposite side to the light incident surface; a first pixel that is in the semiconductor substrate and has an avalanche amplification region including a first conductive region and a second conductive region; a pixel isolation portion that isolates the first pixel from an adjacent pixel; a first insulation film that is provided on the second surface side and in contact with the pixel isolation portion; and a second insulation film that is provided between the first insulation film and the avalanche amplification region, in which a film thickness of the second insulation film is larger than the film thickness of the first insulation film.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
A solid-state imaging element (200) according to the present disclosure includes a light receiving substrate (201) and a circuit board (202). The light receiving substrate (201) includes a plurality of light receiving circuits (211) in which photoelectric conversion elements are provided. The circuit board (202) is bonded to the light receiving substrate (201) and includes a plurality of address event detection circuits (231) that respectively detects voltage changes output from the photoelectric conversion elements of the plurality of light receiving circuits (211). The circuit board (202) includes a first element region (501) and a second element region (502). In the first element region (501), a first transistor (T1) driven by a first voltage (VDD1) is arranged. In the second element region (502), a second transistor (T2) driven by a second voltage (VDD2) lower than the first voltage (VDD1) is arranged. A full trench isolation (FTI) structure (521) is arranged between the first element region (501) and the second element region (502) adjacent to each other.
Images of a chart installed on a road are captured from positions at a constant distance, the captured images are analyzed to calculate a camera resolution, and a warning output/automated-driving-level lowering process is executed depending on a result of the calculation. An image analyzing section selects, from camera-captured images and as an image for resolution analysis, an image captured at a timing of detection of a reference line. A resolution calculating section calculates the resolution of captured images by using a chart image for resolution analysis included in the image for resolution analysis selected by the image analyzing section. The reference line is recorded on a road where a moving apparatus is running, at positions at a constant distance from a chart for resolution analysis installed on the road, and a highly precise resolution of captured images based on images of the chart captured from the positions at the constant distance can be calculated.
Image quality enhancement in a solid-state imaging element with simultaneous pixel exposure is disclosed. In one example, a solid-state imaging element includes a first pixel with a first selection transistor that opens and closes a path between a first capacitive element holding a predetermined reset level and a predetermined node, and a second selection transistor that opens and closes a path between a second capacitive element holding a signal level corresponding to an exposure amount and the node. It also includes a second pixel with a third selection transistor that opens and closes a path between a third capacitive element holding a predetermined reset level and a predetermined node, and a fourth selection transistor that opens and closes a path between a fourth capacitive element holding a signal level corresponding to the exposure amount.
H04N 25/532 - Control of the integration time by controlling global shutters in CMOS SSIS
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
The present disclosure relates to a memory controller and a memory access method that make it possible to suppress occurrence of useless access.
The present disclosure relates to a memory controller and a memory access method that make it possible to suppress occurrence of useless access.
A readout controlling section starts, in response to a burst access request for a memory, reading out of data from the memory without depending on completion of the burst access request. A buffer stores multiple pieces of data read out from the memory, and an output controlling section outputs the multiple pieces of data stored in the buffer, according to a protocol of an outputting destination. The technology according to the present disclosure can be applied, for example, to LSI that is built in a TWS for which Bluetooth is used.
Provided is a distribution circuit which has good pass characteristic and isolation characteristic over a wide band. A distribution circuit, in which Wilkinson-type distribution circuits configured with a coil, a capacitor, and a resistor are cascaded in two stages between an input terminal and at least three terminals, and a capacitor is connected in parallel with the resistor inserted between the output terminals in the latter-stage Wilkinson-type distribution circuits.
The present disclosure relates to an information processing apparatus, an information processing method, and a program enabling to achieve more suitable vibration monitoring.
The present disclosure relates to an information processing apparatus, an information processing method, and a program enabling to achieve more suitable vibration monitoring.
A vibration detection unit generates vibration information representing a vibration state of a subject, on the basis of event data that is output from an EVS and includes a pixel position, a time, and a polarity at which an event that is a luminance change for each pixel has occurred. The technology according to the present disclosure can be applied to, for example, a vibration monitoring system.
H04N 25/47 - Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
G01H 9/00 - Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by using radiation-sensitive means, e.g. optical means
H04N 23/63 - Control of cameras or camera modules by using electronic viewfinders
H04N 25/40 - Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
70.
OBJECT RECOGNITION METHOD AND TIME-OF-FLIGHT OBJECT RECOGNITION CIRCUITRY
The present disclosure generally pertains to an object recognition method for time-of-flight camera data, including: recognizing a real object based on a pretrained algorithm, wherein the pretrained algorithm is trained based on time-of-flight training data, wherein the time-of-flight training data are generated based on a combination of real time-of-flight data being indicative of a background, and simulated time-of-flight data generated by applying a mask on synthetic overlay image data representing a simulated object, thereby generating a masked simulated object, the mask being generated based on the synthetic overlay image data.
The present technology provides a surface emitting laser capable of stabilizing emission characteristics against change in driving temperature.
The present technology provides a surface emitting laser capable of stabilizing emission characteristics against change in driving temperature.
The present technology provides a surface emitting laser including: first and second multilayer film reflectors; a plurality of active regions stacked between the first and second multilayer film reflectors; and a tunnel junction disposed between at least one set of two adjacent active regions, in which the plurality of active regions includes at least two of the active regions in which peak wavelengths of emission spectra are different from each other. According to the present technology, a surface emitting laser capable of stabilizing emission characteristics against change in driving temperature is provided.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/30 - Structure or shape of the active region; Materials used for the active region
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
In a display device, light emitting units each formed by stacking a first electrode, an organic layer, and a second electrode are formed and arranged in a two-dimensional matrix on a substrate, the first electrode is provided for each light emitting unit, partition walls are formed between adjacent ones of the first electrodes, the organic layer and the second electrode are stacked on the entire surface including a part over the first electrodes and a part over the partition walls, a filling layer filling recesses between the partition walls is formed on the second electrode, the partition walls include stacks each including at least two layers including a lower layer portion on the light emitting unit side and an upper layer portion located above the lower layer portion, and at least part of light entering from the light emitting units is totally reflected on surfaces of the upper layer portions of the partition walls.
Provided is a light emitting and receiving device capable of causing light to exit to outside and receiving light from outside.
Provided is a light emitting and receiving device capable of causing light to exit to outside and receiving light from outside.
The light emitting and receiving device includes a plurality of light emitting elements and a plurality of light receiving elements. The plurality of light emitting elements is two-dimensionally arranged separately. The plurality of light receiving elements is two-dimensionally arranged at a height different from a height of the plurality of light emitting elements, and each light receiving element faces an inter-element separation portion between adjacent light emitting elements.
A solid-state imaging device includes an imaging element array that includes M imaging elements arranged in a first direction and N imaging elements arranged in a second direction, that is, M×N imaging elements in total, each of the imaging elements including a photoelectric conversion unit that includes a photoelectric conversion layer 21, an insulation layer 32, a charge discharge electrode 22, an upper electrode 23, and a charge accumulation electrode 24. The photoelectric conversion layer is provided as a common layer at least for the N imaging elements. The photoelectric conversion unit of each of the imaging elements further includes a first charge transfer control electrode 25, a second charge transfer control electrode 26, and a light shielding layer 12. The photoelectric conversion layer 21 includes a photoelectric conversion layer-first region 21A, a photoelectric conversion layer-second region 21B, and a photoelectric conversion layer-third region 21C. The light shielding layer 12 covers at least the photoelectric conversion layer-second region 21B and the photoelectric conversion layer-third region 21C.
Provided is a solid-state imaging element provided with a sample-and-hold circuit, the solid-state imaging element improving the image quality of image data.
Provided is a solid-state imaging element provided with a sample-and-hold circuit, the solid-state imaging element improving the image quality of image data.
A first pixel generates a predetermined first reset level and a first signal level according to an exposure amount. A second pixel generates a predetermined second reset level and a second signal level according to an exposure amount. A sample-and-hold circuit performs reset level sampling processing of causing a first individual capacitor to hold the first reset level and causing a second individual capacitor to hold the second reset level, and correlated double sampling processing of causing a common capacitor and the first individual capacitor to hold a first output level according to a difference between the first reset level and the first signal level and causing the common capacitor and the second individual capacitor to hold a second output level according to a difference between the second reset level and the second signal level.
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/767 - Horizontal readout lines, multiplexers or registers
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
76.
SOLID-STATE IMAGING DEVICE, METHOD OF CONTROLLING SOLID-STATE IMAGING DEVICE, AND CONTROL PROGRAM FOR SOLID-STATE IMAGING DEVICE
A reduction in image quality is suppressed. A solid-state imaging device according to an embodiment includes: a pixel array unit (101) including a plurality of pixels; a control unit (105) that reads first image data from the pixel array unit in each of a plurality of cycles in one frame; and a processing unit (108) that generates second image data of the one frame on the basis of a plurality of the first image data read in the one frame.
The number of components of a semiconductor package is reduced. The semiconductor package includes a solid-state imaging element, a frame, and an adhesive. In the semiconductor package, the solid-state imaging element has a pixel region in which pixels are arrayed and a circuit region in which a predetermined circuit is arranged adjacent to the pixel region. In the semiconductor package, an inner wall of the frame surrounds an outer periphery of the solid-state imaging element, and a part of the inner wall is extended inward. In the semiconductor package, the adhesive bonds the extended portion of the frame and the circuit region.
The present disclosure provides an imaging device and an electronic apparatus that can be made smaller in size, are capable of high-speed reading, and do not cause degradation of a captured image.
The present disclosure provides an imaging device and an electronic apparatus that can be made smaller in size, are capable of high-speed reading, and do not cause degradation of a captured image.
The imaging device includes: a pixel that outputs a photoelectric conversion signal corresponding to an incident light quantity; and a comparator that compares the photoelectric conversion signal with a reference signal. The comparator includes: a differential circuit that outputs a signal corresponding to a signal difference between the photoelectric conversion signal and the reference signal; and a differential control circuit that sets an operating point of the differential circuit within a signal reset period before an operation of comparing the photoelectric conversion signal with the reference signal is started.
H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array
H04N 25/59 - Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
79.
DISTANCE IMAGE SENSOR DEVICE, DISTANCE IMAGE PROCESSING SYSTEM, AND TRANSMISSION METHOD OF DISTANCE DATA
Distance image sensing is disclosed. In one example, a sensing device includes distance measurement processing that calculates a distance to an object in the target area on the basis of the electric signal output from each of a plurality of light receiving pixels and outputs distance data based on the distance. The sensing device also performs gamma correction on the output distance data by applying a gamma curve profile indicated by operation conditions corresponding to a predetermined distance measurement range, and transmits the gamma-corrected distance data to a host device.
G06V 10/25 - Determination of region of interest [ROI] or a volume of interest [VOI]
G06V 10/56 - Extraction of image or video features relating to colour
G06V 10/74 - Image or video pattern matching; Proximity measures in feature spaces
G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects
80.
SOLID-STATE IMAGING DEVICE AND ELECTRONIC EQUIPMENT
PLS is further suppressed. A solid-state imaging device includes: a first semiconductor substrate including a first semiconductor layer provided with a plurality of photoelectric conversion units that performs photoelectric conversion, and a first wiring layer provided on a surface side opposite to a light incident surface of the first semiconductor layer; a second semiconductor substrate including a second semiconductor layer provided with a charge holding unit that holds signal charge generated in the photoelectric conversion unit and a second wiring layer provided on one surface side of the second semiconductor layer, and overlapped with and bonded to the first semiconductor substrate such that the second wiring layer is positioned between the first wiring layer and the second semiconductor layer; and a light shielding layer provided in at least one of the first wiring layer or the second wiring layer at a position facing the charge holding unit in a thickness direction.
An electronic device comprising circuitry configured to apply a reflectance sharpening filter to a reflectance image obtained according to an indirect Time-of-Flight, iToF, principle to obtain a filtered reflectance value for a pixel of the reflectance image.
The present disclosure generally pertains to time-of-flight demodulation circuitry configured to: determine a light event pattern with an event-based light detection element of a plurality of event-based light detection elements; and determine, for a demodulation element of a plurality of demodulation elements, a timing for a demodulation signal to be applied to the demodulation element based on the light event pattern, wherein the demodulation element is associated with the event-based light detection element.
There is provided a light receiving element capable of obtaining a signal with high autofocus performance while suppressing image quality degradation, an imaging device, and a correction processing method. The light receiving element includes: a first pixel that includes a plurality of photoelectric conversion units configured to share a first on-chip lens, receive incident light from a pupil region of an optical system via the first on-chip lens, and perform photoelectric conversion; and a second pixel that includes a plurality of photoelectric conversion units configured to share a second on-chip lens, receive the incident light from the pupil region of the optical system via the second on-chip lens, and perform the photoelectric conversion. The second pixel has lower transmittance on an outer side of the pupil region in which the first pixel is capable of receiving light as compared with the transmittance of the pupil region.
An image processing apparatus according to the present technology includes: a distortion addition processing unit that inputs object unit images that are images for a plurality of objects constituting one frame image, and performs addition processing of rolling shutter distortion for each of the object unit images on the basis of information on a rolling shutter time difference; and a composite image generation unit that generates a composite image obtained by combining the object unit images subjected to the addition processing by the distortion addition processing unit into one frame image.
An information processing method includes position information detection processing, effect processing, and display processing. The position information detection processing performs detection of distance information of a real object based on depth data acquired by a ToF sensor (30). The effect processing performs occlusion processing of a real object and an AR object generated by the CG based on the detected distance information of the real object. The display processing displays a result of the occlusion processing on a display (50).
The present technology relates to an imaging element and an imaging device that facilitate miniaturization of pixels.
The present technology relates to an imaging element and an imaging device that facilitate miniaturization of pixels.
The first substrate including a plurality of detection pixels that generates a voltage signal corresponding to a logarithmic value of a photocurrent, and the second substrate including a detection circuit that detects whether the change amount of the voltage signal of a detection pixel indicated by an inputted selection signal among the plurality of detection pixels exceeds a predetermined threshold or not are stacked, and an element constituting the detection circuit is disposed in each of a first region on a back surface side and a second region on a front surface side of the second substrate. The present technology can be applied to, for example, an imaging element that detects an address event for each pixel.
A signal for two wavelengths of infrared light and visible light is obtained. This solid-state imaging device includes a pixel region in which a plurality of pixels is arranged in a matrix, in which the plurality of pixels includes a first pixel and a second pixel, the first pixel includes a first light transmitting part that is provided on a light incident surface side of a first compound semiconductor layer and transmits infrared light and visible light, and a first photoelectric conversion element that is provided in the first compound semiconductor layer and photoelectrically converts the infrared light and the visible light that have passed through the first light transmitting part, and the second pixel includes a second light transmitting part including a second compound semiconductor layer, the second light transmitting part being provided on the light incident surface side of the first compound semiconductor layer and transmitting the infrared light and blocking the transmission of the visible light, and a second photoelectric conversion element that photoelectrically converts the infrared light that has passed through the second light transmitting part.
Embodiments of the present disclosure provide a dynamic vision sensor, a method, and a noise filtering circuit for a dynamic vision sensor (DVS). The noise filtering circuit is configured to receive a first request signal in response to a first event detected by one of a group of pixels of the DVS. Also, the noise filtering circuit is configured to trigger a timeframe in response to receiving the first request signal. Further, the noise filtering circuit is configured to receive a second request signal in response to a subsequent second event detected by one of the group of pixels. Also, the noise filtering circuit is configured to forward the second request signal to an arbitration logic if the second event is detected within the timeframe, and to block the second request signal from being forwarded to the arbitration logic if the second event is detected outside the timeframe.
H04N 25/60 - Noise processing, e.g. detecting, correcting, reducing or removing noise
H04N 25/47 - Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
H04N 25/40 - Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.
H04N 25/616 - Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
Each of a plurality of pixels includes a light receiving element that generates an electric charge in response to received light, a pixel circuit that outputs an analog signal in accordance with the electric charge, and a conversion circuit that converts the analog signal into a digital signal based on a reference signal whose voltage changes stepwise. A generation unit that generates, as reference signals, a first reference signal to be supplied to a first pixel of the plurality of pixels and a second reference signal to be supplied to a second pixel of the plurality of pixels different from the first pixel. The first reference signal is supplied to the first pixel of the plurality of pixels via a first wiring, and the second reference signal is supplied to the second pixel of the plurality of pixels different from the first pixel via a second wiring.
Light state image sensors and systems are provided. The light state image sensor includes a plurality of pixels, each of which includes a plurality of sub-pixels. A diffraction layer is disposed adjacent a light incident surface side of the array includes a set of electrically conductive or semiconductive diffraction features for each pixel. Each set of diffraction features includes linear elements disposed along different radii extending from a centerline of the respective pixel. Non-linear scattering elements can also be included in each set of diffraction features. Light state information, such as color and polarization state, of light incident on a pixel is determined by comparing ratios of signals between pairs of sub-pixels to values stored in a calibration table.
An imaging element according to an embodiment of the present disclosure includes a photoelectric conversion layer including an organic photoelectric conversion material, a hole transporting material, and an electron transporting material, in which the electron transporting material includes a fullerene compound monomer and a fullerene compound dimer.
To downsize an imaging element formed by stacking a plurality of semiconductor substrates. The imaging element includes pixels, a pixel circuit, an isolating section, a buried electrode, and a connecting location. Each of the pixels includes: a photoelectric conversion section on the first semiconductor substrate; a charge holding section that holds a charge generated by the photoelectric conversion section; and a charge transfer section. The pixel circuit generates an image signal on the basis of charges disposed and held on a second semiconductor substrate stacked on the front surface side of the first semiconductor substrate. The isolating section is disposed at a boundary of the pixels. The buried electrode is disposed at the boundary of the pixel overlapping the isolating section, so as to be connected to the first semiconductor substrate. The connecting location is connected to the buried electrode.
A solid-state imaging device according to an embodiment of the present disclosure includes a first semiconductor layer and a second semiconductor layer that are stacked. The first semiconductor layer includes a photoelectric conversion section and an electric charge accumulation section for each of pixels. The electric charge accumulation section accumulates signal charge generated in the photoelectric conversion section. The second semiconductor layer includes a pixel transistor that reads out the signal charge of the electric charge accumulation section. This solid-state imaging device includes a pixel separation section and a shared coupling section. The pixel separation section is provided in the first semiconductor layer. The pixel separation section partitions a plurality of the pixels from each other. The shared coupling section is provided between the second semiconductor layer and the first semiconductor layer. The shared coupling section is provided across the pixel separation section. In addition, the shared coupling section is in contact with a plurality of the electric charge accumulation sections. Coupling between each of the electric charge accumulation sections and the shared coupling section includes three-dimensional coupling.
[Object] To detect an installation error of an imaging device by simple processing.
[Object] To detect an installation error of an imaging device by simple processing.
[Solving Means] A signal processing device of the present disclosure includes an optical flow detecting unit configured to detect an optical flow on the basis of an image captured by an imaging device installed on a vehicle, and an installation error calculating unit configured to calculate an amount of error in attitude of the imaging device on the basis of information on the optical flow.
A solid-state imaging element according to the present technology includes a pixel array unit in which a plurality of pixels each having a photoelectric conversion portion is arranged, the pixel array unit includes, as the pixels, a first pixel for obtaining a gradation signal indicating an intensity of received light and a second pixel for detecting that a change in an amount of received light exceeds a predetermined threshold value, and a volume of a photoelectric conversion portion included in the second pixel is larger than a volume of a photoelectric conversion portion included in the first pixel.
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/702 - SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
A photodetection device according to the present disclosure includes: a light-receiving section that includes a light-receiving element, and generates a pulse signal including a pulse corresponding to a result of light reception by the light-receiving element; a plurality of switches that is each turned on or off on the basis of a corresponding control signal of a plurality of control signals, and each transmits the pulse signal by being turned on in a pulse period of the corresponding control signal of the plurality of control signals; a plurality of counters that is provided corresponding to the plurality of switches, and each performs counting processing on the basis of the pulse signal supplied through a corresponding switch of the plurality of switches to generate a first count value; and a signal generator that generates the plurality of control signals in a detection period to sequentially shift the respective pulse periods of the plurality of control signals by a unit period having a shorter time length than the pulse period.
A photodetection device is provided which includes a pixel array unit including a plurality of pixels arranged in a matrix on a semiconductor substrate to detect light, in which each of the pixels includes a pixel separation wall that surrounds the pixels and separates the pixels from one another, a photoelectric conversion unit inside the semiconductor substrate to generate an electric charge by light, a multiplication region inside the semiconductor substrate to multiply the electric charge from the photoelectric conversion unit, and first and second reflective portions that reflect light traveling toward outside the semiconductor substrate into the semiconductor substrate, the first reflective portion is provided, on a first surface that receives light of the semiconductor substrate, to protrude from the pixel separation wall toward a pixel center, and the second reflective portion is provided on a second surface of the semiconductor substrate facing the first surface.
An imaging device according to an embodiment includes: a pixel array section (101) that includes a plurality of pixels that are arranged in a matrix array and each generate a pixel signal corresponding to light received by exposure, and outputs image data of each of the pixel signals generated by the plurality of pixels at a frame cycle; a signature generating section (1021) that generates signature data on the basis of the image data; and an output control section (104) that controls output of the image data and the signature data, and the signature generating section generates the signature data by thinning the image data output at the frame cycle in a unit of thinning that is based on the frame cycle.
H04L 9/32 - Arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system
IMAGING APPARATUS AND IMAGING METHOD, CAMERA MODULE, AND ELECTRONIC APPARATUS CAPABLE OF DETECTING A FAILURE IN A STRUCTURE IN WHICH SUBSTRATES ARE STACKED
The present disclosure relates to an imaging apparatus and an imaging method, a camera module, and an electronic apparatus that are capable of detecting a failure in an imaging device having a structure in which a plurality of substrates are stacked.
The present disclosure relates to an imaging apparatus and an imaging method, a camera module, and an electronic apparatus that are capable of detecting a failure in an imaging device having a structure in which a plurality of substrates are stacked.
The timing at which a row drive unit provided in a second substrate outputs a control signal for controlling accumulation and reading of pixel signals in a pixel array provided in a first substrate is compared with the timing at which the control signal output from the row drive unit is detected after passing through the pixel array. Depending on whether or not the timings coincides with each other, a failure is detected. The present disclosure can be applied to an imaging apparatus mounted on a vehicle.
H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
H04N 25/683 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects by defect estimation performed on the scene signal, e.g. real time or on the fly detection
H04N 25/766 - Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power