A method of regenerating an acid gas adsorption device includes the steps of: causing an acid gas to be adsorbed to an acid gas adsorption material by supplying a gas including the acid gas to an acid gas adsorption device so that the gas is brought into contact with an acid gas adsorption layer; causing the acid gas to be desorbed from the acid gas adsorption material; removing the acid gas adsorption layer of the acid gas adsorption device, which has been subjected to the step of causing the acid gas to be adsorbed and the step of causing the acid gas to be desorbed, from a surface of a base material; and forming an acid gas adsorption layer including a porous carrier and an acid gas adsorption material on the surface of the base material from which the acid gas adsorption layer has been removed.
B01J 20/30 - Processes for preparing, regenerating or reactivating
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
2.
METHOD OF ADJUSTING HEAT UNIFORMITY ON WAFER MOUNT AND METHOD OF MANUFACTURING WAFER MOUNT
A method of adjusting heat uniformity on a wafer mounting surface of a wafer mount having a ceramic base including the wafer mounting surface which can heat a wafer through energization and a cooling plate includes: a) preparing the wafer mount including the cooling plate including: a base including a flow path of a coolant; and a lid detachable from the base; b) measuring a temperature distribution with the lid being attached on the base while heating through the energization and cooling; c) detaching the lid and locally adjusting a shape of the flow path when the temperature distribution does not satisfy a predetermined criterion; and d) remeasuring the temperature distribution after adjusting the shape of the flow path, with the lid being attached on the base while heating through the energization and cooling, wherein the steps c) and d) are repeated until the remeasured temperature distribution satisfies the criterion.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A porous composite includes a porous base material and a porous collection layer provided on a collection surface of the base material. The collection layer includes particles deposited in pores of the collection surface. In a plan view of the collection surface, the proportion of the area of a covered region that is covered with the collection layer out of the collection surface is less than or equal to 70%, and the proportion of the area of a pore region out of a non-covered region that is not covered with the collection layer is less than or equal to 15%.
Trial manufacturing condition proposing system includes a characteristic evaluation data preprocessing unit, a feature value selection processing unit, a regression model creation processing unit, and a trial manufacturing condition proposing processing unit. The characteristic evaluation data preprocessing unit applies preprocessing to the characteristic evaluation data indicating an evaluation result of characteristics of the material. The feature value selection processing unit executes feature value selection processing on the characteristic evaluation data to which the preprocessing has been applied. The regression model creation processing unit executes regression model creation processing on the characteristic evaluation data, to which the preprocessing has been applied, based on the result of the feature value selection processing. The trial manufacturing condition proposing processing unit executes trial manufacturing condition proposing processing based on a regression model created by the regression model creation processing unit with respect to the characteristic evaluation data to which the preprocessing has been applied.
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
G06F 30/17 - Mechanical parametric or variational design
There is provided an electrostatic chuck assembly including: an electrode-embedded ceramic plate; a cooling plate that supports a bottom surface of the ceramic plate and has an internal space of an annular or arcuate shape; an internal fixation member of an annular or arcuate shape accommodated in the internal space so as to be rotatable about a central axis of the cooling plate; female threads in a multiple of n, which is an integer of 2 or more, spaced apart from each other in the internal fixation member; and n insertion holes for insertion of bolts for being fixed to a chamber, the insertion holes each being provided at the bottom of the cooling plate such that one set of n female threads is exposed. Each of the female threads is disposed such that another set of n female threads is exposed in the insertion holes when rotated.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A heat treatment system may include a heat treatment furnace; a supply device; a stack device configured to stack saggars in an up-down direction; a first conveyor configured to convey the saggars to the heat treatment furnace; an unstack device configured to unstack the stacked saggars; a recovery device; and a second conveyor configured to convey the saggars from the heat treatment furnace to the unstack device. At least one of the recovery device and the supply device may include at least a first conveyor mechanism and a second conveyor mechanism. The recovery device may further include a first recovery unit disposed on the first conveying path and a second recovery unit disposed on the second conveying path, or the supply device may further include a first supply unit disposed on the first conveying path and a second supply unit disposed on the second conveying path.
F27B 9/02 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-chamber type; Combinations of furnaces
B65G 61/00 - Use of pick-up or transfer devices or of manipulators for stacking or de-stacking articles not otherwise provided for
F27D 5/00 - Supports, screens, or the like for the charge within the furnace
A heat treatment system may include a heat treatment furnace configured to heat treat a material in a saggar; a conveyor configured to convey the saggar from an exit to an entrance of the heat treatment furnace; a recovery device configured to recover the material heat-treated; a supply device configured to supply a non-heat-treated material to the saggar; and a hood covering the conveying path. The conveying path may include a first conveying path disposed on at least a part of the conveying path between the recovery device and the supply device; and a second conveying path disposed on other part of the conveying path than the part where the first conveying path is disposed. The hood may be disposed over the second conveying path and may not be disposed over the first conveying path.
F27B 9/24 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path being carried by a conveyor
F27B 9/40 - Arrangements of controlling or monitoring devices
8.
METHOD OF MANUFACTURING BONDED SUBSTRATE, METHOD OF MANUFACTURING CIRCUIT SUBSTRATE, AND CIRCUIT SUBSTRATE
A method of manufacturing a bonded substrate includes: preparing one or plurality of products to be bonded, each including a brazing material layer and a copper plate laminated on both main surfaces of a ceramic substrate, laminating, one or a plurality of products bonded and a pair of clamping members that clamp them while providing a mold releasing layer between each thereof, heating the one or the plurality of products while pressing the one or the plurality of products in the pair of clamping members to obtain the one or the plurality of bonded substrates in which the ceramic substrate and the copper plate are bonded with a bonding layer, and removing the mold releasing layer from the bonded substrate by dissolving a portion in contact with the mold releasing layer of the copper plate included in the bonded substrate by wet etching.
A wafer placement table includes a ceramic plate having a wafer placement surface and an electrode, a cooling plate made of a metal-ceramic composite and having a cooling medium passage, and a joining layer configured to join the plates. A distance from the wafer placement surface to at least one of upper base or lower base of the cooling medium passage is not constant. The cooling plate has a plurality of plate portions including a first plate portion and a second plate portion, and has a structure in which the plurality of plate portions metal-joined to each other. The first plate portion has a first passage portion which is a through groove having the same shape as the cooling medium passage. The second plate portion has a second passage portion which is a bottomed groove disposed in at least part of a region facing the first passage portion.
A mixed gas separation method includes a step of supplying a mixed gas to the separation membrane and causing a gas with high permeability in the mixed gas to permeate through the separation membrane. In the step, when ΔP is a difference between a gas pressure on the primary side of the separation membrane, i.e., a feed pressure, and a gas pressure on the secondary side of the separation membrane, i.e., a permeate pressure, and A is a Joule-Thomson coefficient, a difference ΔT between a gas temperature on the primary side of the separation membrane, i.e., a feed temperature, and a gas temperature on the secondary side of the separation membrane, i.e., a permeate temperature, is made less than 90% of A·ΔP by setting the Nu number in the mixed gas to be greater than or equal to 2 and less than or equal to 10.
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A heater element includes: a honeycomb structure including an outer peripheral wall and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face to form a flow path; a pair of electrode layers provided on the outer peripheral wall and the partition walls on the first end face and the second end face; and terminals capable of electrically connecting the electrode layers to a conducting wire. At least a part of each of the electrode layers has an extending portion extending outwardly from an outer edge of each of the first end face and the second end face. Each of the terminals is connected to the extending portion and disposed to face a side surface of the honeycomb structure.
H05B 3/26 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
12.
LAYERED DOUBLE HYDROXIDE, METHOD FOR PRODUCING LAYERED DOUBLE HYDROXIDE, AIR ELECTRODE, AND METAL-AIR SECONDARY BATTERY
There is provided an EUV transmissive membrane including: a main layer composed of metallic beryllium that has a first surface and a second surface; and a pair of surface layers provided on the first surface and the second surface of the main layer, each containing at least one fluoride selected from beryllium fluoride, beryllium fluoride nitride, beryllium fluoride oxide, and beryllium fluoride nitride oxide.
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
14.
EUV TRANSMISSIVE MEMBRANE, METHOD OF USE THEREOF, AND EXPOSURE METHOD
Provided is an EUV transmissive membrane including a main layer having an EUV transmittance of 85% or more at a wavelength of 13.5 nm, wherein the main layer is composed of a monolayer or a composite layer of two or more layers, and a protective layer that covers at least one side of the main layer, wherein the protective layer includes at least one selected from the group consisting of amorphous carbon, Cu, Al, and an organic resist as a main component.
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
There is provided a nickel-zinc secondary battery including, in a sealed container, a positive electrode, a negative electrode, a separator provided between the positive electrode and the negative electrode, and an electrolytic solution. An oxygen absorber is provided in a position where oxygen generated in the positive electrode in the sealed container is absorbable.
H01M 10/52 - Removing gases inside the secondary cell, e.g. by absorption
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01J 20/28 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
A heat treatment system may include a heat treatment furnace configured to heat treat a material in a saggar; a conveyor configured to convey the saggar from an exit to an entrance of the heat treatment furnace; a recovery apparatus configured to recover the material heat-treated from the saggar; and a supply device configured to supply a non-heat treated material to the saggar. The conveyor may include a conveyor mechanism and a drive unit configured to drive the conveyor mechanism. The recovery apparatus may comprise a recovery unit disposed at a position where the conveyor mechanism is not disposed and configured to recover the material in the saggar; a transport device configured to transport the saggar between a placement position on the conveyor mechanism and a recovery position above the recovery unit; and an inversion mechanism configured to invert the saggar at the recovery position.
F27B 9/24 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path being carried by a conveyor
F27B 9/39 - Arrangement of devices for discharging
A heat treatment system may include a heat treatment furnace configured to heat treat a material in a saggar, the saggar including a saggar body and a lid; a lid removing device configured to remove the lid from the saggar; a body conveyor configured to convey the saggar body; a lid conveyor configured to convey the lid; a recovery device configured to recover the material from the saggar body; a supply device configured to supply a non-heat-treated material to the saggar body; and a lid attaching device configured to attach the lid to the saggar body. A conveying time for the lid to be conveyed from an entrance to an exit of a conveying path of the lid conveyor may be shorter than a conveying time for the saggar body to be conveyed from an entrance to an exit of a conveying path of the body conveyor.
F27B 9/02 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-chamber type; Combinations of furnaces
F27D 5/00 - Supports, screens, or the like for the charge within the furnace
The uniformity of the temperatures in a module battery for a high-temperature operating secondary battery is ensured. A battery cell that is a high-temperature operating secondary battery includes: a cylindrical main body including a positive part and a negative part; a sheath annularly sheathing the main body, the sheath including at least a cylindrical metal part and an insulating part annularly sheathing an external side surface of the metal part; and a coil of a conductive wire rod wound around an external side surface of the insulating part.
H01M 10/617 - Types of temperature control for achieving uniformity or desired distribution of temperature
H01M 10/6563 - Gases with forced flow, e.g. by blowers
H01M 10/657 - Means for temperature control structurally associated with the cells by electric or electromagnetic means
H01M 50/213 - Racks, modules or packs for multiple batteries or multiple cells characterised by their shape adapted for cells having curved cross-section, e.g. round or elliptic
19.
DIELECTRIC DRYING METHOD AND DIELECTRIC DRYING DEVICE FOR CERAMIC FORMED BODIES, AND METHOD FOR PRODUCING CERAMIC STRUCTURES
A dielectric drying method for ceramic formed bodies includes drying a plurality of ceramic formed bodies placed side by side in an arrangement direction Y perpendicular to a conveying direction X on an upper surface of a drying table by conveying the ceramic formed bodies between electrodes of an upper electrode and a lower electrode, and applying a high frequency between the electrodes. The drying table is conveyed by a conveyor having at least one conveyor belt for supporting a portion of the drying table in the arrangement direction Y. At least one electric field adjusting member is arranged below the drying table that is not supported by the conveyor belt.
F26B 3/347 - Electromagnetic heating, e.g. induction heating or heating using microwave energy
F26B 15/18 - Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form with movement in a path composed of one or more straight lines, e.g. compound the lines being all horizontal or slightly inclined the objects or batches of materials being carried by endless belts
Provided is a storage battery set and a storage battery system that are highly redundant against failures in battery cells. A module battery including at least one string in which multiple battery cells are connected in series, the multiple battery cells being high-temperature operating secondary batteries, the multiple battery cells included in the at least one string being divided into a plurality of cell groups, the module battery includes: a main path through which the plurality of cell groups are connected in series; and a bypass path allowing each of the plurality of cell groups to be individually bypassed in the at least one string, wherein when at least one of the multiple battery cells fails, an energizing path is diverted from the main path to the bypass path at a corresponding one of the plurality of cell groups to which the failed battery cell belongs.
A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole; and a thermally conductive paste interposed, for example, between side surfaces of the projections and an inner peripheral surface of the projection insertion hole of the heat dissipation sheet.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
23.
ASSEMBLY OF PIEZOELECTRIC MATERIAL SUBSTRATE AND SUPPORTING SUBSTRATE
A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×1015 Ω/□ or higher.
H10N 30/072 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
H10N 30/086 - Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
A wafer placement table includes a ceramic base having a wafer placement surface; resistance heating elements buried in the ceramic base; jumper layers having a planar shape and provided in a different layer from the resistance heating elements; an inner via connecting the jumper layer and an end of the resistance heating element; and a feed via connected to the jumper layer, wherein each of the resistance heating elements is provided for each of zones of a surface parallel to the wafer placement surface, each of the jumper layers is provided for each of the resistance heating elements, and a center-to-center distance between the inner via and the feed via in each of the jumper layers is greater than or equal to 50 mm.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
A member for semiconductor manufacturing apparatus includes a ceramic plate incorporating an electrode; a ceramic plate through hole extending through the ceramic plate in an up-and-down direction; a base plate having electrical conductivity and located adjacent to a lower surface of the ceramic plate; a base plate through hole extending through the base plate in the up-and-down direction; an insulating sleeve inserted into the base plate through hole and having an outer circumferential surface adhered to an inner circumferential surface of the base plate through hole with an adhesive layer therebetween; and a sleeve through hole extending through the insulating sleeve in the up-and-down direction and communicating with the ceramic plate through hole, wherein the insulating sleeve has at least one ring-shaped or spiral outer circumferential groove on the outer circumferential surface of the insulating sleeve except for an upper end portion of the insulating sleeve.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
26.
GAS SENSOR AND METHOD OF IDENTIFYING DEVIATION OF REFERENCE POTENTIAL OF THE SAME
A gas sensor includes a sensor element and a control device, and detects a specific gas concentration that is a concentration of a specific gas in a measurement-object gas. The sensor element includes an element body including an oxygen-ion-conductive solid electrolyte layer and provided with a measurement-object gas flow portion therein, the measurement-object gas flow portion introducing the measurement-object gas and causing the measurement-object gas to flow therethrough; a measurement electrode disposed in a measurement chamber of the measurement-object gas flow portion; and a reference electrode disposed inside the element body to come into contact with a reference gas that serves as a reference for detection of the specific gas concentration. The control device measures a voltage across the ground and the reference electrode, and identifies a deviation of the reference potential that is the electrical potential of the reference electrode based on the measured voltage.
A member for a semiconductor manufacturing apparatus, includes: a ceramic plate that has a ceramic plate through hole; an electroconductive base plate that has a base plate through hole and that is disposed on a lower surface side of the ceramic plate; an insulating sleeve which is inserted into the base plate through hole and of which an outer peripheral surface is adhered to an inner peripheral surface of the base plate through hole via an adhesion layer; and a sleeve through hole that passes through the insulating sleeve in the up-down direction and that communicates with the ceramic plate through hole. The insulating sleeve has a tool engaging portion that is engageable with an external tool, and upon being engaged with the external tool, the tool engaging portion transmits rotation torque of the external tool to the insulating sleeve.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
28.
SUPPORT, ZEOLITE MEMBRANE COMPLEX, METHOD OF PRODUCING ZEOLITE MEMBRANE COMPLEX, AND SEPARATION METHOD
A porous cylindrical support for use in supporting a zeolite membrane has a generally cylindrical inside surface having a central axis extending in the longitudinal direction and a generally cylindrical outside surface that surrounds the inside surface. A zeolite membrane is formed on the outside surface. A maximum value A and a minimum value B of a support thickness in a circumferential direction satisfy (A−B)/(A+B)≤0.3 in at least part of the support in the longitudinal direction, the support thickness being a radial distance between the inside surface and the outside surface. By reducing a variation in support thickness, it is possible to improve uniformity in the thickness of the zeolite membrane formed on the support.
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
C01B 39/48 - Other types characterised by their X-ray diffraction pattern and their defined composition using at least one organic template directing agent
C07C 7/144 - Purification, separation or stabilisation of hydrocarbons; Use of additives using membranes, e.g. selective permeation
Provided is a gas sensor element or the like in which a diffusion mode of NOx reaching a measurement electrode is changed from molecular diffusion to a mode of diffusing while repeatedly colliding with a wall face of a sufficiently narrow flow path. In a gas sensor element according to one aspect of the present invention, a porous diffusion layer covering a measurement electrode has a porosity that is lower than the porosity of a leading end protection layer covering at least a face of an element substrate in which a gas inlet is open, and that is 5% or more and 25% or less.
Provided is a gas sensor element or the like in which the diffusion mode of NOx that reaches a measurement electrode is changed from molecular diffusion to a mode of diffusing while repeatedly colliding with a wall face of a sufficiently narrow flow path. In a gas sensor element according to one aspect of the invention, a porous diffusion layer, which accounts for 70% or more of a cross-section of a flow path of a measurement target gas that is orthogonal to a flow direction of the measurement target gas, has a porosity of 5% or more and 25% or less, and is located at a position that is upstream of the measurement electrode and where the distance to the measurement electrode is 0.15 mm or less.
A methane production system includes a co-electrolysis device and a reforming device connected to the co-electrolysis device. The co-electrolysis device has a co-electrolysis cell including a first electrode at which H2, CO, and O2− are produced from CO2 and H2O, an electrolyte capable of transferring O2−, and a second electrode at which O2 is produced from the O2− transferred from the first electrode through the electrolyte. The reforming device has a reforming cell that produces CH4 from the H2 and CO produced at the first electrode.
A reactor includes a second flow path on a permeation side of a separate membrane. The second flow path includes an inflow port open to a first space between a first seal portion and a flow stop unit, and an outflow port open to a second space between a second seal portion and a flow stop unit. A housing includes a sweep gas supply port for supplying a sweep gas to the first space and a sweep gas exhaust port for discharging the sweep gas from the second space. In a side view of the reactor, a direction in which the sweep gas flows through the second space is opposite to a direction in which the sweep gas flows through the second flow path.
Provided is a coin-shaped lithium ion secondary battery including a positive electrode layer, a negative electrode layer, a separator interposed between, an electrolytic solution, and an exterior body having a coin shape with a bulge on at least one surface and comprising a closed space accommodating the positive electrode layer, the negative electrode layer, the separator, and the electrolytic solution. The lithium ion secondary battery has a main region where all of the positive electrode layer, the negative electrode layer, and the separator overlap and a peripheral region which is devoid of at least one of the positive electrode layer, the negative electrode layer, and the separator, wherein a battery bulge ratio that is the ratio of the maximum thickness of the lithium ion secondary battery in the main region to the minimum thickness of the lithium ion secondary battery in the main region is 1.01 to 1.25.
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
H01M 50/109 - Primary casings, jackets or wrappings of a single cell or a single battery characterised by their shape or physical structure of button or coin shape
H01M 50/186 - Sealing members characterised by the disposition of the sealing members
H01M 50/181 - Arrangements of electric connectors penetrating the casing adapted for the shape of the cells for button or coin cells
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
H01M 10/0569 - Liquid materials characterised by the solvents
H01M 10/0568 - Liquid materials characterised by the solutes
A reactor includes a second flow path on a permeation side of a separation membrane. The second flow path includes an inflow port open to a first space between a first seal portion and a flow rate adjustment unit, and an outflow port open to a second space between a second seal portion and a flow rate adjustment unit. A housing includes a sweep gas supply port for supplying a sweep gas to the first space and a sweep gas exhaust port for discharging the sweep gas from the second space. In a side view of the reactor, a direction in which the sweep gas flows from the first space to the second space via the flow rate adjustment unit is the same as a direction in which the sweep gas flows through the second flow path.
An inspection system for carrying out an inspection method for a pillar-shaped honeycomb structure, the inspection system including: a robot arm with a robot hand at a tip of the robot arm, the robot hand comprising a pair of gripping surfaces capable of gripping the pillar-shaped honeycomb structure from the first end surface and the second end surface, the pair of gripping surfaces being configured to be able to rotate the pillar-shaped honeycomb structure at a predetermined rotational speed while gripping the pillar-shaped honeycomb structure from the first end surface and the second end surface; the area camera for the side surface; a screen that can display the strip-shaped images; and a controller that can at least set a rotation speed of the pair of gripping surfaces and the shutter speed of the area camera for the side surface.
G01B 21/02 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
A sensor element for detecting a specific gas concentration in a measurement-object gas, the sensor element includes: an element body internally provided with a measurement-object gas flow portion that introduces a measurement-object gas and causes the measurement-object gas to flow therethrough; a reference-gas introduction portion disposed inside the element body, the reference-gas introduction portion being configured to introduce a reference gas; a reference-gas adjustment pump cell having a pump reference electrode disposed inside the element body, the reference-gas adjustment pump cell being configured to pump oxygen into a periphery of the pump reference electrode; and a sensor cell having a voltage reference electrode disposed inside the element body, and a measurement-object gas-side electrode disposed inside or outside the element body, the sensor cell being configured to generate a voltage based on an oxygen concentration in a periphery of the measurement-object gas-side electrode.
A reactor includes a separation membrane permeable to a product of a conversion reaction of a raw material gas containing at least hydrogen and carbon oxide to a liquid fuel, a non-permeation side flow path extending in an approximately vertical direction on a non-permeation side of the separation membrane, the raw material gas flowing through the non-permeation side flow path, and a catalyst configured to fill the non-permeation side flow path and promote the conversion reaction. The catalyst includes a first layer and a second layer disposed upward of the first layer, and a mean equivalent circle diameter of catalyst particles included in the first layer is larger than a mean equivalent circle diameter of catalyst particles included in the second layer.
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
An electronic component includes a first surface with a first electrode and a second surface with a second electrode. A measuring instrument includes a first terminal and a second terminal. Only the second surface out of the first surface and the second surface is adhered to a conductive adhesive sheet. The first terminal of a measuring instrument is electrically connected to the first electrode at the first surface, the second terminal of the measuring instrument is electrically connected to the second electrode through the conductive adhesive sheet at the second surface, and the electronic component is measured using the measuring instrument.
There is provided a zinc secondary battery including a unit cell including: a positive electrode plate; a negative electrode plate; a nonwoven fabric covering or wrapping up each of the positive electrode plate and the negative electrode plate; a hydroxide ion conductive separator; and an electrolytic solution; and a battery container housing the unit cell. Each element is vertically arranged, and an excessive portion of the electrolytic solution is always retained on a bottom of the battery container in an amount corresponding to a liquid level lower than lower ends of the positive electrode plate and the negative electrode plate. The nonwoven fabric covering or wrapping up the positive electrode plate has a lower extension portion contactable with the excessive portion of the electrolytic solution, and a lower end of the lower extension portion is always positioned below the liquid level of the excessive portion of the electrolytic solution.
A sensor element is for detecting a specific gas concentration in a measurement-object gas, and includes: an element body including an oxygen-ion-conductive solid electrolyte layer and internally provided with a measurement-object gas flow portion that introduces the measurement-object gas and causes the measurement-object gas to flow therethrough; a flow portion pump cell having a pump inner electrode disposed in an internal cavity of the measurement-object gas flow portion, the flow portion pump cell being configured to pump out oxygen from the internal cavity or pump oxygen into the internal cavity; and a flow portion sensor cell having a voltage inner electrode disposed in the internal cavity, the flow portion sensor cell being configured to generate a voltage based on an oxygen concentration in the internal cavity.
A sensor element is for detecting a specific gas concentration in a measurement-object gas, and includes: an element body internally provided with a measurement-object gas flow portion; an adjustment chamber pump cell having an adjustment electrode disposed in an oxygen concentration adjustment chamber of the measurement-object gas flow portion, and a pump outer electrode disposed outside the element body, the adjustment chamber pump cell being configured to pump out oxygen from the oxygen concentration adjustment chamber or pump oxygen into the oxygen concentration adjustment chamber; a reference-gas introduction portion disposed inside the element body; and an outer sensor cell having a voltage outer electrode disposed outside the element body, and a reference electrode disposed inside the element body, the outer sensor cell being configured to generate a voltage based on an oxygen concentration in the measurement-object gas outside the element body.
A member for a semiconductor manufacturing apparatus, the member has a wafer placement surface and includes: a plurality of gas outflow passages each having an opening on the wafer placement surface; a common gas passage that is in communication with the plurality of gas outflow passages; and at least one gas inflow passage that is in communication with the common gas passage from a surface of the member for a semiconductor manufacturing apparatus that is on an opposite side from the wafer placement surface, the number of the at least one gas inflow passage being smaller than the number of the gas outflow passages in communication with the common gas passage. Among the plurality of gas outflow passages, a gas outflow passage closer to the gas inflow passage has a larger gas passage resistance than a gas outflow passage farther from the gas inflow passage.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A circuit board assembly includes a wiring board, the lithium secondary battery electrically connected to the wiring board, and a wireless communication device electrically connected to the wiring board. The lithium secondary battery includes a positive electrode, a negative electrode arranged to face the positive electrode, and an electrolyte. In the lithium secondary battery, an electrode area (S) and a battery resistance (R) satisfy a relationship of 0.08≤R/S≤1.80 (Ω/cm2), where the electrode area is an area where the positive electrode and the negative electrode face each other.
A member for semiconductor manufacturing apparatus of the present invention includes an AlN ceramic substrate with a surface provided with projections for wafer placement. At least part of an area, provided with no projection, of the AlN ceramic substrate has a surface layer region from the surface to a predetermined depth, and a base material region below the surface layer region. The predetermined depth is 5 μm or less. The oxygen content rate of the surface layer region is higher than the oxygen content rate of the base material region.
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
C04B 35/581 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
C04B 41/00 - After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
C04B 41/53 - After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of part of the materials of the treated article
B23K 26/352 - Working by laser beam, e.g. welding, cutting or boring for surface treatment
45.
COMPOSITE SUBSTRATE, METHOD FOR PRODUCING COMPOSITE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM OXIDE CRYSTAL FILM
A composite substrate includes: a base substrate and an α-Ga2O3 crystal film that is provided on the base substrate, has a thickness of 10 μm or more, and has at least one alkali metal element content of 1.2×1015 atoms/cm3 or more and 1.0×1018 atoms/cm3 or less.
C30B 7/14 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface; a conductive base plate; a gas common passage provided inside the base plate; gas outlet passages provided to reach the wafer placement surface from the gas common passage; at least one gas inlet passage provided to communicate with the gas common passage from a lower surface of the base plate; and an insulating sleeve disposed in a base plate through-hole. The insulating sleeve has a first communication hole that constitutes part of the gas common passage, and a second communication hole that is provided to reach an upper surface of the insulating sleeve from the first communication hole, and constitute part of the gas outlet passages.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A heating furnace includes a plurality of heat storage coolers capable of introducing a cooling gas into an inside of the furnace and sucking an in-furnace gas; wherein each of the plurality of heat storage coolers includes a gas nozzle in communication with the inside of the furnace; a gas port in communication with an outside of the furnace and connected to a gas piping system that is capable of switching between supplying gas to the heat storage cooler and exhausting gas from the heat storage cooler; a gas passage communicating the gas nozzle with the gas port and having a space for filling a heat storage element; and a heat storage element filled in the space for filling the heat storage element.
F27B 9/12 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity with special arrangements for preheating or cooling the charge
F27D 9/00 - Cooling of furnaces or of charges therein
F28C 3/00 - Other direct-contact heat-exchange apparatus
A sputtering target includes a gallium nitride-based crystalline body composed of a plurality of gallium nitride-based monocrystalline grains whose c-axes are orientated in a direction normal to a predetermined surface. The gallium nitride-based crystalline body has a total oxygen concentration of 150 mass ppm or lower, and the gallium nitride-based monocrystalline grains have oxygen concentrations of 2×1017 cm−3 or higher measured by dynamic SIMS method.
A sensor element includes: an element body including an oxygen-ion-conductive solid electrolyte layer; and a protective layer that covers at least part of the element body and is a porous body having a plurality of pores thereinside. The standard deviation of the porosity of the protective layer is 2.3% or less.
A wafer placement table includes an upper substrate including a ceramic substrate and having a wafer placement surface, a lower substrate disposed on a lower surface of the upper substrate including a refrigerant flow path or a refrigerant flow-path groove, a through hole extending through the lower substrate in an up-down direction to intersect with the refrigerant flow path or the refrigerant flow-path groove, a screw hole provided in the lower surface of the upper substrate, at a position facing the through hole, a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole, and a refrigerant-leakage prevention member that prevents the refrigerant from leaking out to the lower surface of the lower substrate through the through hole into which the screw member is inserted.
A wafer placement table includes a ceramic substrate that has a wafer placement surface on an upper surface, a first cooling substrate formed of a composite material of metal and ceramic or a low thermal expansion metal material, a metal joining layer that joins ceramic substrate and the first cooling substrate to each other, a second cooling substrate in which a refrigerant flow path is formed, a heat dissipation sheet disposed between the first cooling substrate and the second cooling substrate, a screw hole that opens in the lower surface of the first cooling substrate, a through hole that is provided at a position facing the screw hole and that extends through the second cooling substrate in an up-down direction, and a screw member that is inserted into the through hole from a lower surface of the second cooling substrate and that is screwed into the screw hole.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A method of evaluating a separation membrane module includes a step of supplying a performance degradation gas having a property of reducing permeance of a separation membrane to a primary side of the separation membrane, and a step of, after the previous step, supplying an evaluation fluid to the primary side of the separation membrane to measure a flow rate of the evaluation fluid to a secondary side of the separation membrane.
A solid electrolyte is composed primarily of a component expressed by a composition formula of Lia+dMbXcAeOf by using values a to f that are greater than 0, where M is an element serving as a trivalent cation, X is a halogen element, and A is a sulfur element or a phosphorus element, wherein 0.8c≤(a+3b)≤1.2c and 1.6f≤(d+n×e)≤2.4f are satisfied, where when A is a sulfur element, n is 4 or 6, and when A is a phosphorus element, n is 5.
A separation membrane complex includes a porous support, an intermediate membrane which is a polycrystalline membrane formed on a surface of the support and has pores that are originated from a framework structure and have an average pore diameter smaller than that of pores in the vicinity of the surface of the support, and a separation membrane which is formed on the intermediate membrane and is an inorganic membrane having a regular pore structure. In the separation membrane, a functional group is introduced into pores of a surface layer thereof which is away from the intermediate membrane.
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
A gas sensor includes a sensor element and a control unit thereof. The sensor element includes: a base part; a measurement-object gas flow cavity formed from one end part in a longitudinal direction of the base part; a pump cell including an intracavity electrode disposed in the measurement-object gas flow cavity; and a reference electrode disposed in a reference gas chamber formed inside the base part. The control unit includes: a driving control part; a storing part storing in advance, a standard correspondence relationship at a standard time at which a reference potential of the reference electrode is at a predetermined value; and a diagnosing part obtaining a diagnostic correspondence relationship, and comparing the obtained diagnostic correspondence relationship with the standard correspondence relationship to diagnose a deviation of a reference potential of the reference electrode at the diagnostic time from the predetermined value at the standard time.
A lithium secondary battery includes a positive electrode composed of a sintered body containing lithium cobaltate, a negative electrode, and a separator composed of a sintered body containing magnesia interposed between the positive electrode and the negative electrode. The lithium secondary battery further includes an intermediate layer between the positive electrode and the separator, the intermediate layer containing an oxide containing Co and Mg.
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
The waveguide element includes: a dielectric portion having holes periodically formed in a substrate made of a ceramics material; a low-dielectric constant portion having a dielectric constant smaller than a dielectric constant of the dielectric portion; and a support substrate arranged below the dielectric portion, the support substrate being configured to support the dielectric portion. The waveguide element is configured to guide an electromagnetic wave having a frequency of 30 GHz or more and 20 THz or less, and a frequency range of the electromagnetic wave in which an absolute value of a propagation loss becomes 1 dB/cm or less is 50 GHz or more.
A honeycomb filter comprising a pillar-shaped honeycomb structure having a porous partition wall disposed so as to surround a plurality of cells which serve as a fluid through channel extending from an inflow end face to an outflow end face and a porous plugging portion provided at either an end on the inflow end face side or an end on the outflow end face side of the cell, wherein in a processed image obtained by binarizing an electron microscope image of a visual field area of 480 μm×640 μm of the plugging portion, the plugging portion is composed of a plurality of particles, and the number of the particles having an area of 0.25 μm2 or more is 1000 or more and 3500 or less.
A wafer placement table includes: a ceramic substrate having a wafer placement surface and incorporating an electrode; a conductive embedded member electrically connected to the electrode; a conductive terminal with a female thread, the conductive terminal being electrically connected to the conductive embedded member, having a projection projecting from a surface, on an opposite side to the wafer placement surface, of the ceramic substrate, having the female thread at an end face of the projection; a conductive adapter that is mounted on the end face of the projection of the conductive terminal with the female thread, has a communication hole that communicates with the female thread, and is non-rotatable relative to the conductive terminal with the female thread; and a conductive connection member with a male thread, the conductive connection member having the male thread screwed into the female thread through the communication hole, and being integrated with the adapter.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
60.
AIR ELECTRODE/SEPARATOR ASSEMBLY AND METAL-AIR SECONDARY BATTERY
Provided is an air electrode/separator assembly including a hydroxide ion conductive separator including an inner space, a pair of catalyst layers covering both surfaces of the hydroxide ion conductive separator and containing a catalyst for an air electrode, a hydroxide ion conductive material, and an electron conductive material, a pair of gas diffusion electrodes provided on the pair of catalyst layers on a side opposite to the hydroxide ion conductive separator, and a water absorption/desorption layer provided so as to contact both of the pair of catalyst layers, having water absorbability and desorbability. One of the pair of catalyst layers is a catalyst layer for discharge and the other of the pair of catalyst layers is a catalyst layer for charge; and the hydroxide ion conductive separator, the catalyst layer, and the gas diffusion electrode are arranged vertically, and the water absorption/desorption layer is positioned below the catalyst layer.
H01M 12/08 - Hybrid cells; Manufacture thereof composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type
H01M 50/451 - Separators, membranes or diaphragms characterised by the material having a layered structure comprising layers of only organic material and layers containing inorganic material
61.
AIR ELECTRODE/SEPARATOR ASSEMBLY AND METAL-AIR SECONDARY BATTERY
Provided is an air electrode/separator assembly including: a hydroxide ion conductive separator, an interface layer containing a hydroxide ion conductive material and an electron conductive material and covering one side of the hydroxide ion conductive separator; an air electrode layer provided on the interface layer and including a catalyst layer composed of a porous current collector and a layered double hydroxide (LDH) covering a surface thereof, and a water repellent porous layer covering a surface of the air electrode opposite to the hydroxide ion conductive separator.
H01M 12/08 - Hybrid cells; Manufacture thereof composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type
H01M 50/451 - Separators, membranes or diaphragms characterised by the material having a layered structure comprising layers of only organic material and layers containing inorganic material
Provided is an AlN single crystal substrate having a three-layer structure composed of one AlN single crystal as a whole and is classifiable into the first layer, the second layer, and the third layer in this order in the thickness direction in terms of defect density, wherein the second layer has a defect density of 10 times or more the defect density of each of the first layer and the third layer.
A honeycomb structure includes a pillar-shaped honeycomb structure body having a porous partition wall and a circumferential wall, wherein in a section orthogonal to the extending direction of the cells of the honeycomb structure body, the shape of the cell is a polygonal shape with a corner having an arc shape, a thickness T1[mm] of the partition wall is 0.0500 to 0.1400 mm, a radius of curvature R1[mm] of the corner having the arc shape of the cell and the thickness T1[mm] of the partition wall satisfy the relationship of Equation (1), in the section orthogonal to the extending direction of the cells of the honeycomb structure body, the outer diameter of the honeycomb structure body is 190.5 to 355.6 mm, and a porosity of the partition wall is 20 to 40%.
A honeycomb structure includes a pillar-shaped honeycomb structure body having a porous partition wall and a circumferential wall, wherein in a section orthogonal to the extending direction of the cells of the honeycomb structure body, the shape of the cell is a polygonal shape with a corner having an arc shape, a thickness T1[mm] of the partition wall is 0.0500 to 0.1400 mm, a radius of curvature R1[mm] of the corner having the arc shape of the cell and the thickness T1[mm] of the partition wall satisfy the relationship of Equation (1), in the section orthogonal to the extending direction of the cells of the honeycomb structure body, the outer diameter of the honeycomb structure body is 190.5 to 355.6 mm, and a porosity of the partition wall is 20 to 40%.
0.0050≤R1×T1≤0.0150 Equation (1):
A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface, wherein warping of a crystal plane of the first surface has a plurality of extremes.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/18 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
A monolith-type reactor includes a separation membrane, a first flow path, a second flow path, and a catalyst. The separation membrane is permeable to a product of conversion reaction of a raw material gas containing at least hydrogen and carbon dioxide to a liquid fuel. The raw material gas flows through the first flow path. A sweep gas for sweeping the product that has permeated through the separation membrane flows through the second flow path. The catalyst is disposed in the first flow path and configured to promote the conversion reaction of the raw material gas to the liquid fuel. In a side view of the separation membrane, a direction in which the sweep gas flows through the second flow path is opposite to the direction in which the raw material gas flows through the first flow path.
C07C 29/152 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the reactor used
C07C 29/151 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases
B01J 19/24 - Stationary reactors without moving elements inside
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A cooling plate according to the present invention contains 42% to 65% by mass of TiSi2, 4% to 16% by mass of TiC, and a smaller amount of SiC than the mass percentage of TiSi2.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a negative electrode for use in a zinc secondary battery, including a negative electrode active material layer having a first surface and a second surface, and a negative electrode current collector plate embedded in the negative electrode active material layer parallel to the negative electrode active material layer. The first surface of the negative electrode active material layer is more remote from the negative electrode current collector plate than the second surface, whereby the center of the negative electrode active material layer in a thickness direction is deviated from a reference plane passing through the center of the negative electrode current collector plate in a thickness direction. A ratio of a thickness defined as a distance between the second surface and the reference plane to a thickness defined as a distance between the first surface and the reference plane is greater than 0 and 0.5 or less.
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
68.
HEATER ELEMENT FOR HEATING VEHICLE INTERIOR, HEATER UNIT FOR HEATING VEHICLE INTERIOR, AND HEATER SYSTEM FOR HEATING VEHICLE INTERIOR
A heater element for heating a vehicle interior includes: a honeycomb structure comprising: an outer peripheral wall; and a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells each forming a flow path from a first end face to a second end face, the outer peripheral wall and the partition wall comprising a material having a PTC property; and a pair of electrodes provided on the first end face and the second end face. Each of the first end face and the second end face of the honeycomb structure is rectangular. The heater element for heating the vehicle interior further includes a pair of connectors, each of the connectors being connected to the electrode from one short side of each of the first end face and the second end face.
An analysis apparatus includes: an acceptance unit adapted to accept parameters that affect precipitation of a crystal of an analyte; a prediction unit adapted to predict a type of crystal form to be precipitated, based on the accepted parameters; an evaluation unit adapted to evaluate a relationship between the type of crystal form to be precipitated and the parameters, based on a degree of influence that represents an extent to which each of the parameters affects the precipitation of the crystal of the analyte; and a providing unit that provides the type of crystal form to be precipitated and a precipitation condition to a user as information about a crystal form of a crystal to be precipitated. Thus, the type of crystal form to be precipitated and precipitation conditions of each crystal form can be predicted, with regard to an analyte that exhibits crystal polymorphism.
G16C 20/70 - Machine learning, data mining or chemometrics
G16C 20/30 - Prediction of properties of chemical compounds, compositions or mixtures
G01N 21/35 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
A sensor element includes an element body, a detection unit, a connector electrode, a porous layer that covers at least the front end-side part of a side surface on which the connector electrode is disposed and that has a porosity of 10% or more, and a dense layer. The dense layer is disposed on the side surface so as to divide the porous layer in the longitudinal direction of the element body or to be located closer to the rear end than the porous layer. The dense layer is located closer to the front end of the sensor element than the connector electrode. The dense layer covers the side surface and has a porosity of less than 10%. The dense layer includes an overlap portion that is a front end portion of the dense layer and covers the outer surface of a part of the porous layer.
Provided is an air electrode/separator assembly including a hydroxide ion conductive separator, a catalyst layer including a catalyst for an air electrode, a hydroxide ion conductive material, an electron conductive material, a binder, and a humidity conditioning material and covering one side of the hydroxide ion conductive separator, and a gas diffusion electrode provided on the catalyst layer on a side opposite to the hydroxide ion conductive separator.
H01M 50/451 - Separators, membranes or diaphragms characterised by the material having a layered structure comprising layers of only organic material and layers containing inorganic material
H01M 12/08 - Hybrid cells; Manufacture thereof composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type
A composite substrate includes: a piezoelectric layer; and a reflective layer arranged on a back surface side of the piezoelectric layer, the reflective layer including a low-impedance layer containing silicon oxide and a high-impedance layer, wherein the piezoelectric layer has a modified layer formed in an end portion on the back surface side thereof, and wherein the low-impedance layer has a density of 2.15 g/cm3 or more.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
73.
ZEOLITE MEMBRANE COMPLEX, SEPARATION APPARATUS, MEMBRANE REACTOR, AND METHOD OF PRODUCING ZEOLITE MEMBRANE COMPLEX
A zeolite membrane complex includes a porous support and a zeolite membrane formed on the support and composed of ETL-type zeolite. In an X-ray diffraction pattern obtained by X-ray irradiation onto a surface of the zeolite membrane, an intensity of a peak existing in the vicinity of 2θ=9.9° and an intensity of a peak existing in the vicinity of 2θ=19.8° are each not lower than 0.8 times an intensity of a peak existing in the vicinity of 2θ=7.9°.
A liquid fuel synthesis system includes a liquid fuel synthesis unit and a sweep gas supply unit. The liquid fuel synthesis unit is permeable to a product of a conversion reaction of a raw material gas containing at least hydrogen and carbon dioxide to a liquid fuel. The sweep gas supply unit for supplying a sweep gas for sweeping the product has permeating through the separation membrane to the liquid fuel synthesis unit. The sweep gas contains hydrogen or carbon dioxide as a main component.
B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
C07C 29/152 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the reactor used
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A honeycomb filter comprising a pillar-shaped honeycomb structure body having a porous partition wall and a plugging portion, wherein a thickness of the partition wall is 0.257 mm or less, a porosity of the partition wall is 52 to 57%, an average pore diameter of the partition wall is 6 to 13 µm, a number per unit area of pores which exist at a surface of the partition wall and which have equivalent circle opening diameters exceeding 3 µm is 800 to 1500 /mm2, an average equivalent circle opening diameter of pores which exist at a surface of the partition wall and which have equivalent circle opening diameters exceeding 3 µm is 8.0 to 12.0 µm, and in a pore diameter distribution of the partition wall,
D10 is 2.0 to 5.5 µm,
D90 is 13.0 to 25.5 µm, and
(Log(D90)-Log(D10))/Log(D50) is 0.84 or less.
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION (Japan)
NGK INSULATORS, LTD. (Japan)
Inventor
Takakuwa, Osamu
Matsunaga, Hisao
Ishikawa, Takahiro
Uchiyama, Hiromitsu
Sakakibara, Masato
Akaiwa, Masaaki
Abstract
There is provided a copper alloy bonded body composed of a plurality of members made of an age-hardenable copper alloy, the members diffusion-bonded to one another. The copper alloy bonded body has undergone solution annealing and an aging treatment, the content of beryllium in the age-hardenable copper alloy is 0.7% by weight or less, and (i) a bonding interface between the members has disappeared and/or (ii) a bonding interface between the members remains, and an oxide film at the bonding interface has a thickness of 0 nm or more and 5.0 nm or less.
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
C22F 1/02 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
B23K 20/02 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
A membrane heat treatment method includes a process of raising the temperature of a membrane to an intermediate heating temperature (step S21), a process of heating and keeping the membrane at the intermediate heating temperature (step S22), a process of raising the temperature of the membrane to a main heating temperature higher than the intermediate heating temperature (step S23), and the process of heating and keeping the membrane at the main heating temperature (step S24). A first recovery amount R1 that is a difference in permeability of the membrane between after step S22 and before step S21 is 50% or more and 95% or less of a second recovery amount R2 that is a difference in permeability of the membrane between after step S24 and before step S21.
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
79.
METHANE PRODUCTION SYSTEM AND METHANE PRODUCTION METHOD
A methane production system includes a co-electrolysis/reforming cell and a control unit that controls operating temperatures of the co-electrolysis/reforming cell. The co-electrolysis/reforming cell includes a first electrode, a second electrode, and an electrolyte disposed between the first electrode and the second electrode. The co-electrolysis/reforming cell operates in either a co-electrolysis mode in which H2 and CO are produced at the first electrode from CO2 and H2O, or a reforming mode in which CH4 is produced at the first electrode from the H2 and CO produced in the co-electrolysis mode. The control unit makes an operating temperature of the co-electrolysis/reforming cell in the reforming mode lower than an operating temperature of the co-electrolysis/reforming cell in the co-electrolysis mode.
A honeycomb filter includes: a honeycomb substrate having porous partition walls disposed so as to surround cells extending from an inflow end face to an outflow end face, an outer peripheral coating layer disposed so as to surround an outer periphery of the honeycomb substrate, and plugging portions that are disposed at any one of ends on the inflow end face and ends on the outflow end face, of the cells, wherein, the outer peripheral coating layer has an inflection point at which thermal expansion in thermal expansion behavior of the outer peripheral coating layer turns to contraction and a temperature T1 of which is 1000 to 1500° C., and the outer peripheral coating layer has a porosity P1 of 36 to 48%, and a thermal expansion coefficient C1 between 40 to 800° C. of 2.5 to 3.5×10-6 /°C.
A honeycomb filter comprising a pillar-shaped honeycomb structure body having a porous partition wall and a plugging portion, wherein, in a pore diameter distribution of the partition wall, in the case where the pore diameter (µm) whose cumulative pore volume is 10% of the total pore volume is denoted by D10, the pore diameter (µm) whose cumulative pore volume is 50% of the total pore volume is denoted by D50, and the pore diameter (µm) whose cumulative pore volume is 90% of the total pore volume is denoted by D90, all of the following equations (1) to (6) are satisfied.
A honeycomb filter comprising a pillar-shaped honeycomb structure body having a porous partition wall and a plugging portion, wherein, in a pore diameter distribution of the partition wall, in the case where the pore diameter (µm) whose cumulative pore volume is 10% of the total pore volume is denoted by D10, the pore diameter (µm) whose cumulative pore volume is 50% of the total pore volume is denoted by D50, and the pore diameter (µm) whose cumulative pore volume is 90% of the total pore volume is denoted by D90, all of the following equations (1) to (6) are satisfied.
8
.4
μ
m
A heater element includes: a honeycomb structure having an outer peripheral wall and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells each forming a flow path from a first end face to a second end face, the outer peripheral wall and the partition walls made of a material having a PTC property; and a pair of electrode layers provided on a surface of the outer peripheral wall. The honeycomb structure has a shape having a long axis and a short axis in a cross section orthogonal to a central axis.
B60H 1/22 - Heating, cooling or ventilating devices the heat being derived otherwise than from the propulsion plant
H05B 3/50 - Heating elements having the shape of rods or tubes non-flexible heating conductor embedded in insulating material heating conductor arranged in metal tubes, the radiating surface having heat-conducting fins
83.
METHOD FOR RECYCLING LITHIUM-ION SECONDARY BATTERY
Provided is a method for recycling a lithium-ion secondary battery, which includes: providing a used lithium-ion secondary battery that includes: a battery element including a ceramic positive electrode layer, a ceramic separator, and a ceramic negative electrode layer; an electrolytic solution; and a battery container accommodating the battery element and the electrolytic solution, taking out the battery element from the lithium-ion secondary battery, replacing the electrolytic solution in the lithium-ion secondary battery with a fresh electrolytic solution, subjecting the battery element to an electrode restoration treatment including cleaning and/or heat treatment, and putting the battery element subjected to the electrode restoration treatment back into the battery container to assemble a lithium-ion secondary battery.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
84.
CO2 MASS ESTIMATION SYSTEM, EXHAUST GAS COMPOSITION RATIO ESTIMATION METHOD, AND CO2 MASS ESTIMATION METHOD
A CO2 mass estimation system includes: an acquisition element acquiring detected values in accordance with concentrations of oxygen, H2O, and CO2 contained in an engine exhaust gas output from a gas sensor; a setting element setting an air-fuel ratio of a mixture; and a calculation element calculating the mass of CO2 contained in the exhaust gas, wherein the calculation element calculates the concentrations of oxygen, H2O, and CO2 contained in the exhaust gas based on the sensor detected values, acquires concentrations of oxygen and H2O in air and the air-fuel ratio, calculates a composition ratio of at least C atoms contained in fuel based on the concentrations in the exhaust gas, the concentrations in the air, and the air-fuel ratio, and estimates the mass of CO2 contained in the exhaust gas based on the composition ratio and the amount of injection of the fuel into the engine.
A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface. The Group-III element nitride semiconductor substrate has a c-plane tilted with respect to a direction of the first surface, and a direction of the tilt falls between a <1-100> direction and a <11-20> direction.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/34 - Semiconductor bodies having polished or roughened surface the imperfections being on the surface
A wafer placement table includes: a ceramic substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a cooling substrate which is bonded to a lower surface of the ceramic substrate, and in which a refrigerant flow path is formed; a power supply terminal connected to the electrode; and a power supply terminal hole vertically penetrating the cooling substrate and storing the power supply terminal. The power supply terminal hole intersects with the refrigerant flow path.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer placement includes an alumina substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a brittle cooling substrate which is bonded to a lower surface of the alumina substrate, and in which a refrigerant flow path is formed; and a ductile connection member stored in a storage hole opened in a lower surface of the cooling substrate in a state of restricted axial rotation and in a state of being engaged with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section, wherein the storage hole is provided in the refrigerant flow path.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A core substrate is a core substrate with a built-in inductor for constructing an interposer to which a semiconductor element is mounted. The core substrate includes: a ceramic substrate; a conductor portion; and a magnetic material portion. The ceramic substrate has a first surface, a second surface opposite the first surface in a thickness direction, and a through hole between the first surface and the second surface. The conductor portion extends through the through hole. The magnetic material portion surrounds the conductor portion within the through hole, and is made of ceramics. The conductor portion is made of sintered metal.
A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein; a conductive substrate disposed adjacent to a lower surface of the ceramic substrate, serving also as a plasma generating electrode, and having the same diameter as the ceramic substrate; a support substrate disposed adjacent to a lower surface of the conductive substrate, having a greater diameter than the conductive substrate, and electrically insulated from the conductive substrate; and a mounting flange constituting a part of the support substrate and radially extending out of the conductive substrate.
A honeycomb filter comprising a pillar-shaped honeycomb structure body having a porous partition wall and a plugging portion, wherein, in a pore diameter distribution of the partition wall, in the case where the pore diameter (µm) whose cumulative pore volume is 10% of the total pore volume is denoted by D10, the pore diameter (µm) whose cumulative pore volume is 50% of the total pore volume is denoted by D50, and the pore diameter (µm) whose cumulative pore volume is 90% of the total pore volume is denoted by D90, all of the following equations (1) to (6) are satisfied.
A honeycomb filter comprising a pillar-shaped honeycomb structure body having a porous partition wall and a plugging portion, wherein, in a pore diameter distribution of the partition wall, in the case where the pore diameter (µm) whose cumulative pore volume is 10% of the total pore volume is denoted by D10, the pore diameter (µm) whose cumulative pore volume is 50% of the total pore volume is denoted by D50, and the pore diameter (µm) whose cumulative pore volume is 90% of the total pore volume is denoted by D90, all of the following equations (1) to (6) are satisfied.
3.9
μ
m
In an RHO-type zeolite, in a case where a peak at a lattice spacing of 9.96 to 11.25 Å in a measurement using a powder X-ray diffraction method is assumed as a reference peak and an intensity of the reference peak is assumed as 100, a relative intensity of a peak at a lattice spacing of 4.59 to 4.85 Å is 150 to 300, a relative intensity of a peak at a lattice spacing of 3.55 to 3.64 Λ is 200 to 500, and a relative intensity of a peak at a lattice spacing of 2.98 to 3.06 Å is 100 to 200.
A zeolite membrane complex includes a porous support and a zeolite membrane provided on the support and composed of RHO-type zeolite. In a case where a surface of the zeolite membrane is measured by an X-ray diffraction method, a peak intensity derived from a (310) plane of RHO-type zeolite is not higher than 0.4 times a peak intensity derived from a (110) plane thereof and a peak intensity derived from a (211) plane thereof is not higher than 0.3 times the peak intensity derived from the (110) plane.
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
B01J 20/28 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
A package includes a mounting surface on which an electronic component is to be mounted, a cavity, and an attachment surface to which a lid is to be attached through an adhesive layer. The package includes: a bottom containing ceramics and having the mounting surface; and a frame containing ceramics and having the attachment surface. The attachment surface of the frame includes an inner end adjacent to the cavity and an outer end opposite to the inner end in at least one cross-sectional view spanning an inside and an outside of the cavity, the attachment surface having a protruding shape protruding in a thickness direction. At least one of the inner end or the outer end is made lower than a most protruding portion of the protruding shape by 10 μm or more.
A mixed gas separation method includes supplying a mixed gas containing at least N2, H2, and CO2 and having a CO2 concentration of 30% or less by volume to a first separation membrane that selectively allows passage of H2, supplying the first non-permeated gas to a second separation membrane that selectively allows passage of CO2, and supplying the second non-permeated gas to a CO2 collector that separates and collects CO2 by a separation method other than membrane separation to collect CO2 contained in the second non-permeated gas. The first non-permeated gas has a CO2 concentration that is 5% or more by volume higher than or equal to the CO2 concentration in the mixed gas. The second non-permeated gas has an N2 concentration of 50% or more by volume and an H2 concentration of 30% or less by volume.
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A separation membrane complex includes a porous support, a dense part covering one surface of the support from a boundary position toward one side in a predetermined direction on the surface, and a separation membrane covering the surface from the boundary position toward the other side and covering the dense part in the vicinity of the boundary position. In a case where, in a cross section, within a specified range from the boundary position toward the one side in the predetermined direction up to 30 μm, a maximum angle among angles formed of the surface and lines connecting respective positions on a surface of the dense part on a side of the separation membrane and the boundary position is acquired as an evaluation angle, a maximum value of four evaluation angles at four measurement positions is not smaller than 5 degrees and not larger than 45 degrees.
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01J 20/28 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
B01J 20/30 - Processes for preparing, regenerating or reactivating
B01J 20/10 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising silica or silicate
B01J 20/08 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising oxides or hydroxides of metals not provided for in group comprising bauxite
96.
GAS SENSOR AND CONCENTRATION CORRECTION METHOD FOR USE IN GAS SENSOR
A controller of a gas sensor includes: a concentration identification part identifying a concentration of a predetermined gas component based on a measurement pump current flowing between a measurement electrode and an out-of-space pump electrode in accordance with the concentration of the predetermined gas component due to application of a predetermined pump voltage; and a correction processing part correcting the concentration of the predetermined gas component identified by the concentration identification part, the correction processing part corrects the concentration of the predetermined gas component based on a correlation identified in advance between an offset current value as a magnitude of the measurement pump current when a measurement gas not containing the predetermined gas component flows or a normalized value of the offset current value and output fluctuations of the measurement pump current at startup of the gas sensor.
Excessive detections of a defect(s) of a specified defect type is reduced. A test apparatus: inputs each of a plurality of fragment images, which are extracted from a test image of a work, into a learning model which receives an image(s) as input and outputs a type(s), and thereby judges the type with respect to each of the plurality of fragment images. The test apparatus judges whether or not a defect of a specified defect type is captured in the test image, on the basis of whether the judged type with respect to each of the plurality of fragment images is the specified defect type or not.
A method for producing a shrink-fitted member by arranging a pillar shaped ceramic body inside a deep-drawn stainless steel pipe and shrink-fitting them. The method includes: a preparing step of preparing the deep-drawn stainless steel pipe produced by deep-drawing and the pillar shaped ceramic body; a heating step of heating the deep-drawn stainless steel pipe to 900° C. or more; and a shrink-fitting step of inserting the pillar shaped ceramic body into the heated deep-drawn stainless steel pipe and shrink-fitting them.
A casing of a gas sensor having a reference gas space therein includes: an outer tube into which an end portion of a sensor element protrudes; and a seal member fit into an end portion of the outer tube to seal the reference gas space, the sensor element includes: a first electrode lead portion including a first electrode lead to electrically connect an outside and at least one inner electrode and a first lead insulating layer covering the first electrode lead; and a second electrode lead portion including a second electrode lead that can electrically connect the outside and a measurement electrode and a second lead insulating layer covering the second electrode lead, and A/B < 1.00, where A (cm-1) is diffusion resistance of the first electrode lead portion, B (cm-1) is diffusion resistance of the second electrode lead portion.
A honeycomb structure including: an outer peripheral wall; a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells, each of the cells extending from one end face to other end face to form a flow path; and magnetic particles, wherein the magnetic particles contain secondary particles with primary particles combined, wherein in a cross-sectional image of the honeycomb structure, a ratio of a number of the primary particles forming the secondary particles to a total number of the primary particles of the magnetic particles is 40 to 100%, and wherein a particle size D50 corresponding to a cumulative frequency of 50% by number for the primary particles is 5 to 100 μm.
F01N 3/20 - Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous by thermal or catalytic conversion of noxious components of exhaust characterised by methods of operation; Control specially adapted for catalytic conversion
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