Implementations of semiconductor packages may include: a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include two or more spacers coupled to the first side of the first substrate and a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the two or more spacers.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/367 - Cooling facilitated by shape of device
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
2.
SEMICONDUCTOR DEVICE WITH STACKED CONDUCTIVE LAYERS AND RELATED METHODS
A device may include an insulating layer disposed on a frontside of a semiconductor layer, and may include a first conductive contact disposed in a first opening in the insulating layer. The device may include a second conductive contact disposed in a second opening in the insulating layer, and may include a stacked conductive layer disposed on the first conductive contact and excluded from the second conductive contact.
Hearing instruments, such as hearing aids, may improve a quality of presented audio through the use of a binaural application, such as beamforming. The binaural application may require communication between the hearing instruments so that audio from a left hearing instrument may be combined with audio from a right hearing instrument. The combining at a hearing instrument can require synchronizing audio sampled locally with sampled audio received from wireless communication. This synchronization may cause a noticeable delay of an output of the binaural application if the latency of the wireless communication is not low (e.g., a few samples of delay). Presented herein is a low-latency communication protocol that communicates packets on a sample-by-sample basis and that compensates for delays caused by overhead protocol data transmitted with the audio data.
In a general aspect, an assembly includes a panel of organic substrate core material having a cavity defined therein, a module substrate disposed in the cavity, and a semiconductor die disposed on the module substrate. The assembly also includes a layer of prepreg organic substrate material, and a metal layer. The module substrate and the semiconductor die are embedded in the cavity by the layer of prepreg organic substrate material and the metal layer. The metal layer is electrically coupled with at least one of the semiconductor die or the module substrate.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
In one general aspect, an apparatus can include a semiconductor die, a molding material disposed around at least a portion of the semiconductor die, and a pair of leads electrically coupled to the semiconductor die and aligned along a first direction from the molding material. The molding material can define an elongated protrusion aligned along a second direction orthogonal to the first direction, and a notch disposed between the pair of leads.
An integrated substrate may include a conductor layer; a heat sink including a plurality of fins extending therefrom; and a dielectric layer including boron nitride chemically bonded to the conductor layer and to the heat sink with an epoxy.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/367 - Cooling facilitated by shape of device
Implementations of a cover for an image sensor may include an optically transmissive portion and a black mask layer applied as a strip adjacent a perimeter of a largest planar surface of the optically transmissive portion. The first edge of the strip closest to the perimeter may be separated from the perimeter by a predetermined distance.
An image sensor may include an image sensor pixel array. The image sensor pixel array may include active image sensor pixels that generate image data based on incident light and reference pixels that are optically black for generating reference data for noise compensation. Sets of reference pixels in the same row may be coupled to respective shared readout paths in a source follower binning configuration. The shared readout path may be could to downstream readout circuits. The use of shared readout paths for the reference pixels can reduce the number of reference pixel readout paths. If desired, pixel circuitry may be implemented on a first die, while readout circuitry and at least a portion of the reference pixel readout paths may be implemented on a second die mounted to the first die.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
9.
NEGATIVE CHARGE EXTRACTION STRUCTURE FOR EDGE TERMINATION
A gallium nitride (GaN) power device includes a GaN substrate structure having a first surface and a second surface, a metallic layer coupled to the second surface of the GaN substrate structure, and an active region including an array of vertical fin-based field effect transistors (FinFETs) coupled to the GaN substrate structure. The GaN power device also includes an edge termination structure circumscribing the active region and a seal ring structure circumscribing the edge termination structure and comprising a seal ring metal pad operable to conduct charge from the edge termination structure to the metallic layer.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
Implementations disclosed herein may include receiving from a user a selection of at least one die, a package type, and at least one test condition; generating, using a processor, a product die configuration and a product package configuration using a predictive modeling module and the at least one die and the package type; generating a graphic design system file; generating a package bonding diagram; generating a product spice model of the discrete device product using a technology computer aided design module; generating, using a processor, one or more datasheet characteristics of the discrete device product with the product SPICE model; generating a product datasheet for the discrete device product using the graphic design system file; and using a second interface generated by a computing device to provide access to the graphic design system file, the package bonding diagram, the product datasheet, and the product SPICE model.
G06F 30/31 - Design entry, e.g. editors specifically adapted for circuit design
G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
G06F 30/392 - Floor-planning or layout, e.g. partitioning or placement
G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
G06N 3/04 - Architecture, e.g. interconnection topology
According to an aspect, a power module package includes a plurality of power modules including a first power module and a second power module, a plurality of heat sinks including a first heat sink coupled to the first power module and a second heat sink coupled to the second power module, and a module carrier coupled to the plurality of power modules, where the module carrier includes a first region defining a first heat-sink slot and a second region defining a second heat-sink slot. The first heat sink extends at least partially through the first heat-sink slot and the second heat sink extends at least partially through the second heat-sink slot. The power module package includes a housing coupled to the module carrier and a ring member located between the module carrier and the housing.
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 23/367 - Cooling facilitated by shape of device
H01L 23/467 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing gases, e.g. air
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
12.
POWER SYSTEM HAVING MULTI-TRIGGER ALL-PHASE ACTIVATION
A multi-phase power system configured to add and remove phases according to a plurality of states can increase the efficiency of the power system, which can increase a battery life in mobile applications. After phases are shed, a load may quickly change requiring all phases to be activated before an over current protection triggers a shutdown. The response of the power system to these load transients may be improved through the use of multiple triggers, which can provide an early warning of the changing load requirements more accurately and consistently than a single trigger.
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 1/36 - Means for starting or stopping converters
Systems for power conversion, and controllers and methods for operating a multiage power converter. The method includes determining a target body brake time period for setting a load current of the multistage power converter below a predetermined threshold. The method also includes activating a body brake condition for the multistage power converter. The method further includes turning off each stage in the multistage power converter when the body brake condition is active. The method also includes deactivating the body brake condition after the target body brake time period following an activation of the body brake condition.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
An integrated substrate (88) may include a conductor layer (92); a heat sink (94) including a plurality of fins extending therefrom; and a dielectric layer (90) including boron nitride chemically bonded to the conductor layer (92) and to the heat sink (94) with an epoxy.
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 23/373 - Cooling facilitated by selection of materials for the device
A sensor (200, 500, 700) includes an array of optically active pixels disposed on a semiconductor die (210, 510, 710). The array of optically active pixels includes at least one pixel (P1) configured to detect short wavelength infrared radiation (SWIR), and at least one pixel (P2) configured to detect visible light incident on the sensor.
H04N 23/13 - Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with multiple sensors
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
16.
SILICON PHOTOMULTIPLIER (SiPM) HAVING AN IMPROVED SIGNAL-TO-NOISE RATIO
A method includes identifying a region of interest (110) on an array of single-photon avalanche photodiodes (300, 310, 320) disposed on a surface (S) of a semiconductor device (100), enabling the single-photon avalanche photodiodes in the region of interest, and disabling the single-photon avalanche photodiodes that are outside the region of interest. The method further includes, in response to illumination incident on the surface of the semiconductor device, combining photocurrent outputs of the single-photon avalanche photodiodes in the region of interest in an analog photocurrent output channel (CH A, CH, B, CH C, CH S) of the semiconductor device.
17.
SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND LIGHT SPREADING LENSES
An imaging device may include single-photon avalanche diodes (SPADs). The single-photon avalanche diodes may be arranged in a one-dimensional or two-dimensional array in a SPAD-based semiconductor device. The SPAD-based semiconductor device may also include a transparent cover glass that is formed over the array of SPADs. Each line of SPADs within the SPAD-based semiconductor device may be covered by a respective light spreading lens. The light spreading lens may be formed as a groove in an upper surface of the transparent cover glass. The light spreading lens may have a uniform cross-section along its length. The light spreading lens may be formed as a convex lens on an upper or lower surface of the transparent cover glass.
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
18.
SEMICONDUCTOR PACKAGES WITH AN ARRAY OF SINGLE-PHOTON AVALANCHE DIODES SPLIT BETWEEN MULTIPLE SEMICONDUCTOR DICE
A semiconductor package may include a line array of single-photon avalanche diodes (SPADs). The line array of single-photon avalanche diodes may be split between multiple silicon dice. Each silicon die may be overlapped by at least one lens to focus light away from gaps between the dice and towards the single-photon avalanche diodes. There may be one single-photon avalanche diode for each silicon die or multiple single-photon avalanche diodes for each silicon die. When there are multiple single-photon avalanche diodes for each silicon die, lenses may be formed over only the edge single-photon avalanche diodes.
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An image sensor may include an array of image sensor pixels. Pixel control circuitry may provide control signals to the array of image sensor pixels. The pixel control circuitry may include a plurality of driver units that each generate a control signal for a different set of image sensor pixels. The control signal generated by each of the driver units may be delayed relative to each other. A voltage-controlled delay line may provide delayed outputs to each of the driver units. Delay lock circuitry coupled to the voltage-controlled delay line may fix the delay exhibited across the delay line using corresponding global and local bias voltages provided to each of the inverters in the delay line.
H04N 25/779 - Circuitry for scanning or addressing the pixel array
H03K 3/86 - Generating pulses by means of delay lines and not covered by the preceding subgroups
H04N 25/704 - Pixels specially adapted for focusing, e.g. phase difference pixel sets
H04N 25/709 - Circuitry for control of the power supply
H04N 25/711 - Time delay and integration [TDI] registers; TDI shift registers
H04N 25/766 - Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
A driver is suitable for use with a gallium nitride (GaN) power stage, and includes a voltage regulator and a high side driver. The voltage regulator provides a boot voltage between first and second terminals thereof that varies within a range between a turn-on voltage of a GaN transistor, and a safe voltage limit between a gate and a source thereof throughout an active time of said GaN transistor. The high side driver has an input for receiving a high side drive signal, an output for coupling to said gate of said GaN transistor, a power supply terminal coupled to said first terminal of said voltage regulator, and a ground terminal for coupled to said second terminal of said voltage regulator.
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
21.
PRECISION OPERATIONAL AMPLIFIER WITH A FLOATING INPUT STAGE
The operational amplifier disclosed includes an input stage configured to receive power from a floating supply in a low voltage range that can float according to the common mode voltage at the input. The floating supply facilitates the use of low voltage components that can improve the precision of the operational amplifier by lowering the offset voltage. The input stage includes a first gain stage including field effect transistors and a second gain stage using bipolar transistors. The gain stages can be implemented differently to accommodate different applications and fabrication capabilities.
Illustrative GFCI devices and methods maintain safety while reducing the risk of unnecessary interruptions. One illustrative GFCI circuit includes: a first operational amplifier configured to couple to a first current transformer that senses a net current through multiple power conductors, the first operational amplifier configured to convert a signal current from a signal terminal of the first current transformer to a signal voltage, the signal voltage having an inverse dependence on frequency; an analog to digital converter configured to provide samples of the signal voltage; and a controller configured to interrupt at least one of the multiple power conductors when an magnitude measurement derived from the samples exceeds a frequency-independent and/or phase-independent threshold a predetermined number of times or for a predetermined time period.
H02H 3/16 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to fault current to earth, frame or mass
A semiconductor device module may include a leadframe spacer that provides the functions of both a leadframe and a spacer, while enabling a double-sided cooling configuration. Such a leadframe spacer may include a leadframe surface that provides a die attach pad (DAP) that is shared by at least two semiconductor devices. The leadframe spacer may include at least one downset, where the semiconductor devices may be attached within a recess defined by the at least one downset. A first substrate may be connected to a first side of the leadframe. A second substrate may be connected to downset surfaces of the at least one downset, and positioned for further connection to the semiconductor devices in a double-sided assembly.
An illustrative controller includes: a transmitter to drive the acoustic transducer to generate a series of acoustic bursts; a receiver coupled to the acoustic transducer to sense a response for each acoustic burst in the series; and a processing circuit to derive output data from said responses in part by determining a difference between one of the responses and at least a portion of another one of the responses. Another illustrative controller includes: a transmitter to drive the acoustic transducer to generate a series of acoustic bursts with signature sequence of frequency displacements; a receiver coupled to the acoustic transducer to sense a response for each acoustic burst in the series; and a processing circuit to derive output data from said responses in part by suppressing any peaks not conforming to the signature sequence.
A package includes a first direct bonded metal (DBM) substrate, a first semiconductor die disposed on a top surface of the first DBM substrate, a second DBM substrate disposed at a height above the first DBM substrate, and a second semiconductor die disposed on a top surface of the second DBM substrate. A wire bond is made between the first semiconductor die disposed on the top surface of the first DBM substrate and the second semiconductor die disposed on the top surface of the second DBM substrate.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
The techniques described herein relate to a circuit including an operational amplifier that includes a differential amplifier, a capacitor, and an output stage. The differential amplifier includes a first input and a second input. The output stage is configured to generate an output voltage. The circuit includes a slew-rate boost circuitry connected to the operational amplifier. The slew-rate boost circuitry is configured to detect a voltage differential between the first input and the second input and apply, at an output of the differential amplifier, a boost current to charge the capacitor during a period of time in which the output voltage increases or decreases to a target voltage level.
In an example, a semiconductor device includes an active trench region and an intersecting trench. The active region includes an active shield electrode and the intersecting trench includes an intersecting shield electrode. A coupling trench region connects the active trench region to the intersecting trench region. The coupling trench region includes a coupling shield electrode. The coupling shield electrode and the intersecting shield electrode are provided proximate to a termination mesa region. One or more of the coupling shield electrode or the intersecting shield electrode is thinner than the active shield electrode. The thinner shield electrode reduces depletion in the termination mesa region to improve, among other things, breakdown voltage performance.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
In an example, a semiconductor device (10) includes an active trench region (22A) and an intersecting trench region (22C, 22CA, 22CB). The active trench region (22A) includes an active shield electrode (21A) and the intersecting trench region (22C, 22CA, 22CB) includes an intersecting shield electrode (21C, 21C'). A coupling trench region (22B, 22B', 22BA) connects the active trench region (21A) to the intersecting trench region (22C, 22CA, 22CB). The coupling trench region (22B, 22B', 22BA) includes a coupling shield electrode (21B, 21B'). The coupling shield electrode (21B, 21B') and the intersecting shield electrode (21C, 21C') are provided proximate to a termination mesa region (16B, 16B', 16B''). One or more of the coupling shield electrode (21B, 21B') or the intersecting shield electrode (21C, 21C') is thinner than the active shield electrode (21A). The thinner shield electrode reduces depletion in the termination mesa region to improve, among other things, breakdown voltage performance.
Shielded gate semiconductor devices are disclosed for use in high power applications such as electric vehicles and industrial applications. The devices are formed as mesa (106)/trench (400) structures in which shielded gate electrodes are formed in the trenches. Various trench structures (400, 500, 600, 700) are presented that include tapered portions (401) and end tabs (502, 602, 702, 802) that can be beneficial in managing the distribution of electric charge and associated electric fields. The tapered trenches(400) can be used to increase and stabilize breakdown voltages in a termination region (104) of a semiconductor die (100).
H01L 29/86 - Types of semiconductor device controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
30.
LEADFRAME MOUNTING WITH LEAD INSERTION FOR LEAD WALL BONDING
A semiconductor device package may include a substrate having an insulating layer with a patterned conductive layer formed thereon, the patterned conductive layer including at least a first pattern portion and a second pattern portion. The semiconductor device package may include a leadframe having a lead that is soldered to the substrate with solder provided in an opening between the first pattern portion and the second pattern portion and with the lead inserted into the opening.
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
32.
SUPPORTS FOR THINNED SEMICONDUCTOR SUBSTRATES AND RELATED METHODS
Implementations of a semiconductor substrate may include a wafer including a first side and a second side; and a support structure coupled to the wafer at a desired location on the first side, the second side, or both the first side and the second side. The support structure may include an organic compound.
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 23/32 - Holders for supporting the complete device in operation, i.e. detachable fixtures
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
33.
MOTION-COMPENSATED DISTANCE SENSING WITH CONCURRENT UP-CHIRP DOWN-CHIRP WAVEFORMS
Various sensors, sensor controllers, and sensing methods are suitable for use in a multi-channel ultrasonic sensor array such as those used in systems for parking assistance, blind spot monitoring, and driver assistance. One illustrative acoustic sensing method includes: driving an acoustic transducer to send acoustic bursts each including an up-chirp in a first frequency band and a down-chirp in a second frequency band; receiving echo signals responsive to the acoustic bursts from the transducer; and using the echo signals to determine a distance or time of flight from the transducer. Another acoustic sensing method includes: driving an acoustic transducer to send acoustic bursts each including a concurrent up-chirp and down-chirp; receiving echo signals responsive to the acoustic bursts from the transducer; and using the echo signals to determine a distance or time of flight from the transducer.
A system such as an imaging system may include Cyclic Redundancy Check (CRC) value generation circuitry. The CRC value generation circuitry may include a data splitter that splits an input data bit stream instead multiple split data bit streams each inserted with a number of bits having a value of 0. A plurality of CRC value generators may each have a corresponding input path to receive a respective one of the split data bit streams and generate corresponding partial CRC values. A data combiner coupled to the plurality of Cyclic Redundancy Check value generators may combine the partial CRC values to generate a final CRC value. A normalizer may be coupled between each of the plurality of CRC generators and the data combiner. Two CRC value data storage structures may help the plurality of Cyclic Redundancy Check value generators and the data combiner perform the desired CRC computations.
A receiver coil of an inductive angular position sensor can have circuit features that become smaller than reasonable for high resolution measurement designs. This is especially true when multiple receiver coils are used, such as in a three-phase configuration, and when each of the multiple receiver coils is in a twisted loop configuration. The disclosed inductive angular position sensor utilizes different spatial frequencies for a rotor coil and the receiver coils. For example, the spatial frequency of the receiver coils may be kept smaller than the rotor coil. In this condition, the fundamental frequency of the angular position sensor is shifted to the least common multiple of the spatial frequencies, making the angular resolution of the inductive angular position sensor high, while the circuit features of the receiver coils are maintained at a reasonable size.
G01D 5/20 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying inductance, e.g. by a movable armature
36.
SHORT-CIRCUIT DETECTOR FOR ELECTRONIC FUSE CIRCUIT
An electronic fuse that includes a clamp circuit to enhance the protection provided by the electronic fuse. The clamp circuit can detect a short circuit condition quickly and transmit a trigger signal to a controller so that a power transistor of the electronic fuse can be turned-OFF before the current through the power transistor causes overheating or damage. The clamp circuit is a dedicated circuit for short-circuit detection that can work with other current control circuits of the electronic fuse. The clamp circuit does not increase the power consumed by the electronic fuse while not in the short circuit condition. The clamp circuit is small and fast because it can use low-voltage devices, even as high voltages are present at the input and output of the electronic fuse.
H02H 3/087 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess current for dc applications
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
Implementations of semiconductor packages may include one or more die coupled over a substrate, an electrically conductive spacer coupled over the substrate, and a clip coupled over and to the one or more die and the electrically conductive spacer. The clip may electrically couple the one or more die and the electrically conductive spacer.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
In a general aspect, a package includes a semiconductor die disposed between a first high voltage isolation carrier and a second high voltage isolation carrier. The semiconductor die is thermally coupled to the first high voltage isolation carrier. The package also includes a molding material disposed in a space between the semiconductor die and the first high voltage isolation carrier, and a conductive spacer disposed between the semiconductor die and the second high voltage isolation carrier. The conductive spacer is thermally coupled to semiconductor die and to the second high voltage isolation carrier. A longitudinal dimension of the conductive spacer is greater than a longitudinal dimension of the semiconductor die. The molding material encapsulates the semiconductor die and the conductive spacer.
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A method, system, and integrated circuit are provided for testing a battery within a host device for abnormal conditions. The method includes charging the battery to a fully charged state, then, applying a known load to the battery and discharging the battery to a designated depth of voltage. The known load is removed from the battery, and the open circuit voltage (OCV) of the battery is monitored over time to determine an elapsed time over which the OCV recovers to a designated recovery voltage value. Based on the determined elapsed time, the method determines if the battery has a dangerous condition.
G01R 31/382 - Arrangements for monitoring battery or accumulator variables, e.g. SoC
G01R 31/367 - Software therefor, e.g. for battery testing using modelling or look-up tables
G01R 31/374 - Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC] with means for correcting the measurement for temperature or ageing
G01R 31/396 - Acquisition or processing of data for testing or for monitoring individual cells or groups of cells within a battery
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
40.
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES
In an example, a method of manufacturing a semiconductor device includes providing a semiconductor substrate comprising an unpolished CZ silicon substrate, a substrate upper side, and a substrate lower side opposite to the substrate upper side. The method includes first annealing the semiconductor substrate at a first temperature in an inert environment for a first time. The method includes second annealing the semiconductor substrate at a second temperature in a wet oxidation environment for a second time. The first annealing dissolves inner wall oxide in bulk region voids and the second annealing fills the voids with semiconductor interstitials. In some examples, the CZ silicon substrate is provided from a CZ ingot grown in the presence of a magnetic field and using continuous counter-doping. The method provides, among other things, a CZ silicon substrate with reduced crystal originated particle (COP) defects, reduced oxygen concentration, and reduced radial resistivity variation.
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
C30B 15/18 - Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
41.
SEMICONDUCTOR DEVICE AND METHOD OF INTEGRATING POWER MODULE WITH INTERPOSER AND OPPOSING SUBSTRATES
A semiconductor device has an interposer including a plurality of conductive vias formed through the interposer. A first semiconductor die is disposed over the interposer. A second semiconductor die is disposed over a first substrate. The first semiconductor die and second semiconductor die are power semiconductor devices. The interposer is disposed over the second semiconductor die opposite the first substrate. A second substrate is disposed over the first semiconductor die opposite the interposer. The first substrate and second substrate provide heat dissipation from the first semiconductor die and second semiconductor die from opposite sides of the semiconductor device. A plurality of first and second interconnect pads is formed in a pattern over the first semiconductor die and second semiconductor die. The second interconnect pads have a different area than the first interconnect pads to aid with alignment when stacking the assembly.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H10N 30/50 - Piezoelectric or electrostrictive devices having a stacked or multilayer structure
Accordingly, there is disclosed herein host device and bus communication method that enables fast sensor device reinitialization that minimizes outage time associated with an unexpected device reset. One illustrative bus communication method includes: providing each of one or more slave devices with a dynamically-determined bus address; querying each of the dynamically-determined bus addresses to obtain a unique device identifier associated with that dynamically-determined bus address; receiving a sequence of data frames each having time-division multiplexed data from the one or more slave devices; and between data frames in the sequence, checking to determine whether any of the one or more slave devices has been reset.
A package includes a power electronics module disposed between a first bracket and a second bracket with the power electronics module covering openings in the first bracket and the second bracket. Leak-proof joints are formed between surfaces of the power electronics module and the first bracket and the second bracket. A first cover beam is disposed on, and joined to, the first bracket to enclose a first cooling fluid channel for cooling fluid flow over the power electronics module. A second cover beam is disposed on, and joined to, the second bracket to enclose a second cooling fluid channel for cooling fluid flow over the power electronics module. The package includes end connectors that have input and output ports for cooling fluid flow through the first cooling fluid channel and the second cooling fluid channel.
Described implementations include a contaminant-free plasma singulation process, in which residues of materials used during plasma singulation are fully removed from sidewalls of a resulting semiconductor die, without damaging the semiconductor die. From such a contaminant-free plasma singulation process, a semiconductor die may be manufactured. The semiconductor die may include a first plurality of sidewall recesses formed in a sidewall of a substrate of the semiconductor die between a first surface and a second surface of the substrate, each having at most a first depth, as well as a second plurality of sidewall recesses formed in the sidewall of the substrate and disposed between the first plurality of sidewall recesses and the second surface, each having at least a second depth that is greater than the first depth.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In an example, a semiconductor device includes a region of semiconductor material, a first dielectric over the region of semiconductor material, a first gate conductor over a first portion of the first dielectric, and a second gate conductor over a second portion of the first dielectric and laterally spaced apart from the first gate conductor. A first conductor is coupled to the first gate conductor and a second conductor coupled to the second gate conductor and laterally separated from the first conductor by a first spacing. A second dielectric is within the first spacing. The first conductor and the second conductor are laterally capacitively coupled, the first gate conductor is vertically capacitively coupled to the region of semiconductor material, and the second gate conductor is vertically capacitively coupled to the region of semiconductor material.
Implementations of a clamp finger may include a first portion including at least one tip configured to clamp a substrate against an anvil during a bonding operation; and a second portion including a first opening therethrough configured to permit coupling of the second portion with a clamping bridge. The first portion may be slidably coupled with the second portion through a rail and the first portion may include an opening therethrough configured to receive a screw that fixedly couples the at least one tip of the first portion at a desired position relative to the second portion.
The operational amplifier disclosed includes an input stage configured to receive power from a floating supply circuit in in a low voltage range that can float according to the common mode voltage at the input. The low voltage supply facilitates the use of low voltage components that can improve the precision of the operational amplifier by lowering the offset voltage. The input stage utilizes a first gain block and a second gain block. The first gain block is configured to have a low offset voltage while the second gain h block is configured to have a high gain. Dividing these aspects over separate gain blocks improves the precision and noise performance of the operational amplifier. The operational amplifier has high gain at low frequencies and at high frequencies due to a topology that combines a low gain, high bandwidth path with a high gain, low bandwidth path at the output.
In a general aspect, an electronic device assembly includes a circuit including at least one semiconductor die, and a signal lead electrically coupled with the circuit. The signal lead has a hole defined therethrough. The assembly further includes an electrically conductive signal pin holder disposed in the hole of the signal lead. The electrically conductive signal pin holder is electrically coupled with the signal lead. The assembly also includes a molding compound encapsulating, at least, the circuit; a portion of the signal lead including the hole; and a portion of the electrically conductive signal pin holder. An open end of the electrically conductive signal pin holder is accessible outside the molding compound.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
49.
Semiconductor Devices with Single-Photon Avalanche Diodes, Light Scattering Structures, and Multiple Isolation Structures
An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.
H01L 31/055 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/0232 - Optical elements or arrangements associated with the device
G02B 3/06 - Simple or compound lenses with non-spherical faces with cylindrical or toric faces
50.
Dual-channel acoustic distance measurement circuit and method
An acoustic distance measurement circuit includes a transmitter, a receiver, and a controller. The transmitter has an output adapted to be coupled to an acoustic transducer for providing a selected one of an amplitude-modulation (AM) signal in an AM mode and a chirp signal in a chirp mode. The receiver has an input adapted to be coupled to the acoustic transducer, and an output for providing a digital received signal. The controller is operative during a first measurement period to: place the transmitter into one of the AM mode and the chirp mode using a first channel, selectively detect a direct echo in the first channel of the digital received signal of the one of the AM signal and the chirp signal, and selectively detect an indirect echo in a second channel of the digital received signal of another one of the AM signal and the chirp signal.
A jet impingement cooling assembly for semiconductor devices includes an inlet chamber configured to receive an inlet fluid flow, and a jet plate having a plurality of jet nozzles formed therein and coupled to the inlet chamber, and positioned to direct a jet fluid portion of the inlet fluid flow from the inlet chamber through the jet nozzles. The jet impingement cooling assembly may further include an outlet chamber positioned to receive the jet fluid portion once the jet fluid portion has passed through the jet nozzles, and at least one bypass nozzle in fluid connection with the inlet chamber and configured to direct a bypass fluid portion of the inlet fluid flow into the outlet chamber with the jet fluid portion to thereby define an outlet fluid flow.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
It may be desirable to limit the switching frequency of a pulse frequency modulated (PFM) resonant converter, however certain load conditions and/or startup condition require high switching frequencies to regulate an output voltage. The disclosed resonant converter can limit a maximum switching frequency while regulating an output voltage by shifting from PFM to phase-difference modulation based on a load condition. The appropriate modulation can be applied based on a comparison between a charge-control signal and a load-control signal.
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
In one embodiment, a transistor has a drift region that is formed to have a plurality of zones having different vertical doping profiles across the zones. At least one of the zones has a vertical doping profile that has a first peak near a top surface of the zone and a second peak near a bottom surface. An embodiment may have a lower doping in a region that is between the two peaks.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Implementations of semiconductor packages may include: a semiconductor die having a first side and a second side and an active area on the second side of the die. The semiconductor packages may also include two or more bumps coupled to two or more die pads on a second side of the die. The semiconductor packages may include an optically transmissive lid coupled to the semiconductor die through an adhesive, two or more bumps, and a first redistribution layer (RDL). The semiconductor package may include a second redistribution layer (RDL) coupled with the first RDL on the second side of the semiconductor die. The second RDL may extend to the first side of the semiconductor die. The first RDL may extend to an edge of the semiconductor die.
In an example, a semiconductor structure includes a region of semiconductor material of a first conductivity type and a first side. A doped region of a second conductivity type is within the region of semiconductor material at a first depth. A semiconductor device in a first portion of the region of semiconductor material and includes a first current carrying region of the second conductivity type and a second current carrying region. A PN diode is in a second portion of the region of semiconductor material and includes a cathode region and anode region. The cathode region is coupled to the first current carrying region, the anode region is coupled to the doped region, and the doped region is configured to electrically isolate the semiconductor device from region of semiconductor material below the doped region in response to a forward bias applied to the semiconductor.
A method includes disposing at least one power device between a first direct bonded metal (DBM) substrate and a second DMB substrate and thermally coupling a plurality of pipes to a top side of the first DBM substrate opposite a side of the first DBM substrate with the at least one power device. The plurality of pipes is configured to carry cooling fluids in thermal contact with the first DBM substrate.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
57.
MONITORING TEMPERATURE PER PHASE IN A MULTIPHASE POWER STAGE
A multiphase power stage that includes addressing and communication techniques to read temperatures of the phases for thermal load balancing is disclosed. The disclosure describes driver modules that can be assigned addresses for serial communication on a common communication bus by temporarily communicating the addresses over dedicated pulse width modulation connections between the driver modules and the controller. After assignment, a temperature request message, addressed to a driver module, can trigger the driver module to transmit an analog temperature signal to a common temperature bus coupled between the driver modules and the controller. The temperatures of the driver modules may be collected in order to activate and deactivate driver modules based on their temperatures, which can balance a thermal load on the multiphase power stage.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/32 - Means for protecting converters other than by automatic disconnection
58.
ADDRESSING MULTIPHASE POWER STAGE MODULES FOR POWER STATE AND THERMAL MANAGEMENT
A power stage configured for assigning each phase a unique address is disclosed. In particular, the disclosed power stage includes temporarily using a dedicated pulse width modulation (PWM) connection between a controller and a phase to assign a unique address to the phase. Then, after the assignment, the PWM connection may be returned to use for regulation, while the phases can communicate over a common communication bus using their assigned addresses. This addressed communication can be used to control a power state of all phases, all phases of a particular rail, or a particular phase. Controlling the power state with addressed commands communicated over a communication bus can help reduce the current consumed by the power stage during light load conditions or sleep states.
G06F 13/42 - Bus transfer protocol, e.g. handshake; Synchronisation
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
An image sensor may include a sensor chip that is bonded to an application-specific integrated circuit (ASIC) chip. A bond pad for the image sensor may be formed in the ASIC chip and exposed through a trench in the sensor chip. The image sensor may include a conductive light shield at a periphery of the image sensor to shield optically black pixels. An opaque layer may be formed over the conductive light shield to mitigate reflections off the conductive light shield. An anti-reflective layer may be formed over the pixel array. The anti-reflective layer may have a different thickness over the pixel array than in the trench for the bond pad.
A method of setting a synchronous rectifier on-time value includes determining that a time interval has occurred, receiving a number of triangular current mode (TCM) pulses measured during the time interval, and determining a pulse comparison value equal to a number of switching period pulses during the time interval minus the number of TCM pulses during the time interval. The method also includes increasing the synchronous rectifier on-time if the pulse comparison value is greater than or equal to a threshold and decreasing the synchronous rectifier on-time if the pulse comparison value is less than the threshold.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 7/219 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
61.
METHOD FOR DEFINING A GAP HEIGHT WITHIN AN IMAGE SENSOR PACKAGE
According to an aspect, an image sensor package includes a substrate, an image sensor die coupled to the substrate, a light transmitting member, and a plurality of pillar members disposed between and contacting the image sensor die and the light transmitting member. A height of the plurality of pillar members defines a gap height between an active region of the image sensor die and the light transmitting member. The image sensor package including a bonding material that couples the light transmitting member to the image sensor. The bonding material contacts a side of a pillar member, of the plurality of pillar members, that extends between a first end contacting the light transmitting member and a second end contacting the image sensor die.
In one form, a switching controller includes a buck controller and a bypass circuit. The buck controller has an input for receiving a variable voltage, an output for providing a buck voltage by switching the variable voltage into an inductive output filter according to a switching signal having a variable duty cycle to regulate a current into a load. The bypass circuit is coupled to the buck controller for comparing the variable duty cycle of the switching signal to a threshold, for activating a bypass signal in response to the variable duty cycle exceeding the threshold, and for subsequently de-activating the bypass signal according to a predetermined algorithm.
Implementations of a method of designing a module semiconductor product may include receiving a selection of a module type, one or more die, a placement of one or more wires, clips, or pins; and generating, using a processor, a module configuration file. The method may include generating a module bonding diagram using a build diagram system module; selecting one or more SPICE models corresponding with the die; and generating a product SPICE model and a three dimensional model for the module semiconductor product. The method may include generating one or more datasheet characteristics of the module semiconductor product with at least the product SPICE model and the product simulation module, generating a product datasheet for the module semiconductor product using the datasheet formation module, and providing access to at least the module bonding diagram, the product SPICE model, the three dimensional model, and the product datasheet to the user.
G06F 30/31 - Design entry, e.g. editors specifically adapted for circuit design
G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
G06F 30/392 - Floor-planning or layout, e.g. partitioning or placement
G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
G06N 3/04 - Architecture, e.g. interconnection topology
In one general aspect, a method can include forming a recess and a mesa in a metal layer associated with a substrate, and disposing a first portion of a conductive-bonding component on the mesa and a second portion of the conductive-bonding component in the recess. The method can include disposing a semiconductor component on the conductive-bonding component such that the second portion of the conductive-bonding component is disposed between an edge of the semiconductor component and a bottom surface of the recess.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
65.
DUAL SIDE COOLED POWER MODULE WITH THREE-DIMENSIONAL DIRECT BONDED METAL SUBSTRATES
A substrate includes a ceramic tile and a three-dimensional (3D) conductive structure. The 3D conductive structure includes a planar base layer having a bottom surface bonded to a top surface of the ceramic tile, and a block disposed above the planar base layer. The block is monolithically integrated with the planar base layer. A top surface of the block is configured as a die attach pad. The planar base layer has a base vertical thickness from the top surface of the ceramic tile to a top surface of the planar base layer. The block and the planar base layer have a combined vertical thickness from the top surface of the ceramic tile to a top surface of the block that is greater than the base vertical thickness.
In a general aspect, a package includes an optical sensor die fabricated in a semiconductor wafer. The optical sensor die has an optically active area on a front side of the semiconductor wafer generating a raw image signal. A transparent cover attached to the front side of the semiconductor wafer above the optically active area of the optical sensor die. An image signal processor (ISP) die processing the raw image signal is embedded in a layer of molding material attached to a back side the semiconductor wafer opposite the front side of the semiconductor wafer.
A package includes a dielectric fill material layer embedding a first semiconductor die, a connector clip, and a second semiconductor die. The connector clip has a segment disposed above the dielectric fill material layer embedding the first semiconductor die. This segment of the connector clip is aligned along a same direction as a top surface of the first semiconductor die. The second semiconductor die is disposed on the segment of the connector clip disposed above the dielectric fill material layer.
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
68.
TRANSFER MOLDED POWER MODULES AND METHODS OF MANUFACTURE
In a general aspect, an electronic device assembly includes a circuit including at least one semiconductor die, and a molded body encapsulating the circuit. The molded body has a primary surface arranged in a plane and a side surface that is non-parallel with the plane. The assembly also includes a slot defined in the primary surface of the molded body, and a signal lead extending out of the side surface of the molded body. The signal lead is electrically coupled with the circuit and has a plurality of bends that include a bend of that is at least partially disposed in the slot.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01R 12/58 - Fixed connections for rigid printed circuits or like structures characterised by the terminals terminals for insertion into holes
69.
SEMICONDUCTOR DEVICES WITH DISSIMLAR MATERIALS AND METHODS
A method of manufacturing an electronic device includes providing a work piece comprising a first material, a first side, a second side opposite to the first side, and a first CTE. The method includes providing recesses extending into the work piece from the first side and comprising a pattern. The method includes providing a second material comprising a second CTE within the recesses and over the first material between the recesses. The method includes providing a third material comprising a third CTE over one of the second side or the second material. The third CTE and the second CTE are different than the first CTE.
H01L 29/165 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
A package includes an optical sensor die. The optical sensor die has an optically active surface area (OASA) disposed on a front side of a substrate. A glass cover is disposed above the OASA and attached to the front side the substrate by a dam material. A through-substrate via (TSV) extends from an opening at a back side of the substrate toward a front side of the substrate. The TSV has a stepped bottom surface at the front side of the substrate. The TSV provides access for electrical connections between the back side of the substrate and the front side of the substrate.
A package includes a semiconductor die attached to a substrate and a molded body encapsulating the semiconductor die. The molded body is a six-sided rectangular box-like structure and at least a corner portion of the molded body formed by two adjacent sides is devoid of molding material reducing a size and a weight of the molded body.
A semiconductor die includes a semiconductor device fabricated in a substrate. The substrate has a front side, a back side, and an inclined sidewall extending from the back side to the front side. A contact pad is connected to the semiconductor device. The contact pad is embedded in an inter dielectric layer (IDL) disposed in the front side. The contact pad has a contact pad edge with a surface aligned along the inclined sidewall. A redistribution layer (RDL) is disposed on the inclined sidewall. The RDL is physically and electrically connected to the contact pad directly through the surface of the contact pad edge aligned along the inclined sidewall.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
73.
DIODES WITH SCHOTTKY CONTACT INCLUDING LOCALIZED SURFACE REGIONS
In a general aspect, a diode (100) includes a substrate (102) of a first conductivity type, a semiconductor layer (104) of the first conductivity type disposed on the substrate and including a drift region (120), a shield region (110a) of a second conductivity type disposed in the semiconductor layer adjacent to the drift region, and a surface region (132a) of the first conductivity type disposed in a first portion of the drift region adjacent to the shield region. The surface region has a doping concentration greater than a doping concentration of a second portion of the drift region adjacent to the surface region. The second portion excludes the surface region. The diode includes a Schottky material (130) disposed on at least a portion of the shield region, the surface region in the first portion of the drift region; and the second portion of the drift region.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
74.
DIGITAL COMMUNICATIONS BUS SUITABLE FOR AUTOMOTIVE APPLICATIONS
Provided herein is a digital communications bus suitable for automotive applications, along with bus controllers and sensors that use the bus and its associated communication methods. One illustrative sensor includes: a clock signal generator; a bus interface coupled to differential signal conductors to detect periodic synchronization pulses from a bus controller; and a controller that aligns a clock signal from the clock signal generator with the periodic synchronization pulses. The bus interface sends digital data between the periodic synchronization pulses to the bus controller using the clock signal to control symbol transitions.
An imaging system may include a plurality of SPAD pixels. Each SPAD pixel may have a SPAD on a first die and reset, quench, and readout circuitry on a second die. The circuitry for a SPAD pixel on the second die may include stacked-transistor structures configured to operate in a high voltage domain and may include readout circuitry configured to operate in a low voltage domain. The stacked-transistor structures may include p-type transistors formed at a same n-type substrate well and sharing a same bulk connection. The stacked-transistor structures may also include n-type transistors formed at a same p-type substrate well and sharing a same bulk connection.
In some aspects, the techniques described herein relate to a diode including: a substrate of a first conductivity type; a semiconductor layer of the first conductivity type disposed on the substrate, the semiconductor layer including a drift region; a shield region of a second conductivity type disposed in the semiconductor layer adjacent to the drift region; a surface region of the first conductivity type disposed in a first portion of the drift region adjacent to the shield region, the surface region having a doping concentration that is greater than a doping concentration of a second portion of the drift region adjacent to the surface region, the second portion of the drift region excluding the surface region; and a Schottky material disposed on: at least a portion of the shield region; the surface region in the first portion of the drift region; and the second portion of the drift region.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
77.
REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES
In a general aspect, a method can include forming well region of one conductivity type in a semiconductor region of another conductivity type An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The method can further include forming at least one dielectric region in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Implementations of semiconductor packages may include: a semiconductor die having a first side and a second side; one or more bumps included on the first side of the wafer, the bumps comprising a first layer having a first metal and a second layer including a second metal. The first layer may have a first thickness and the second layer may have a second thickness. The semiconductor package may also have a mold compound encapsulating all the semiconductor die except for a face of the one or more bumps.
A method includes applying a sintering precursor material layer to each of a first surface and a second surface of a ceramic tile, and assembling a precursor assembly of a direct bonded copper (DBC) substrate by coupling a first leadframe on the sinter precursor material layer on the first surface of the ceramic tile and a second leadframe on the second surface of the sinter precursor material layer on a second surface of the ceramic tile such that the ceramic tile is disposed between the first leadframe and the second leadframe. The method further includes sinter bonding the first leadframe and the second leadframe to the ceramic tile to form a sinter bonded DBC substrate.
H01L 23/373 - Cooling facilitated by selection of materials for the device
B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
Various embodiments of the present technology may provide methods and systems for position stabilization. The methods and systems for position stabilization may be integrated within an electronic device. An exemplary system may include a driver circuit responsive to a gyro sensor and a feedback signal from an actuator. The driver circuit may be configured to calibrate a gain applied to a drive signal based on the posture of the electronic device.
G02B 27/64 - Imaging systems using optical elements for stabilisation of the lateral and angular position of the image
G01P 15/18 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
H02P 7/025 - Arrangements for regulating or controlling the speed or torque of electric DC motors the DC motors being of the linear type the DC motors being of the moving coil type, e.g. voice coil motors
G02B 7/09 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification adapted for automatic focusing or varying magnification
81.
VERTICAL GALLIUM NITRIDE BASED FETS WITH REGROWN SOURCE CONTACTS
A transistor includes a III-nitride substrate, a first III-nitride layer on the III-nitride substrate, wherein the first III-nitride layer is characterized by a first conductivity type, and a plurality of III-nitride fins on the first III-nitride layer, wherein each of the plurality of III-nitride fins is separated by one of a plurality of first recess regions and characterized by a fin surface, wherein the plurality of III-nitride fins are characterized by the first conductivity type. The transistor also includes a III-nitride gate layer having a second conductivity type opposite to the first conductivity type in the plurality of first recess regions, wherein a surface of the III-nitride gate layer is substantially coplanar with the fin surface, and a regrown III-nitride source contact portion coupled to each of the plurality of III-nitride fins, wherein the regrown III-nitride source contact portion is characterized by the first conductivity type.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
A SiC Schottky rectifier with surge current ruggedness is described. The Schottky rectifier includes one or more multi-layer bodies that provide multiple types of surge current protection.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
A method of fabricating a vertical fin-based field effect transistor (FET) includes providing a semiconductor substrate having a first surface and a second surface, the semiconductor substrate having a first conductivity type, epitaxially growing a first semiconductor layer on the first surface of the semiconductor substrate, the first semiconductor layer having the first conductivity type and including a drift layer and a graded doping layer on the drift layer, and epitaxially growing a second semiconductor layer having the first conductivity type on the graded doping layer. The method also includes forming a metal compound layer on the second semiconductor layer, forming a patterned hard mask layer on the metal compound layer, and etching the metal compound layer and the second semiconductor layer using the patterned hard mask layer as a mask exposing a surface of the graded doping layer to form a plurality of fins surrounded by a trench.
Implementations of a method singulating a plurality of semiconductor die. Implementations may include: forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate where the semiconductor substrate includes a plurality of semiconductor die. The method may include etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer and jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Embodiments include a primary short circuit coupled to a primary side of a transformer and a dampening element, coupled to a transducer coupled to a secondary side of the transformer, configured to dampen a received signal during a portion of a reverberation period.
A circuit includes a metal-oxide semiconductor field-effect transistor (MOSFET) and a snubber circuit coupled between a drain and a source of the MOSFET. The snubber circuit includes a transistor disposed in parallel to the MOSFET. The transistor has a floating gate. The circuit further includes a capacitor in series with the transistor, and a resistor disposed parallel to the capacitor.
H03K 17/16 - Modifications for eliminating interference voltages or currents
H03K 17/0412 - Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
87.
METHOD OF REDUCING RESIDUAL CONTAMINATION IN SINGULATED SEMICONDUCTOR DIE
A method for processing electronic die includes providing a substrate having a plurality of electronic die formed as part of the substrate and separated from each other by spaces. The method includes placing the substrate onto a first carrier substrate. The method includes plasma etching the substrate through the spaces to form singulation lines adjacent the plurality of electronic die. The method includes exposing the plurality of electronic die to solvent vapors, such as heated solvent vapors, under reduced pressure to reduce the presence of residual contaminants resulting from the plasma etching step.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In a general aspect, a diode (100, 200) includes a substrate (102, 202) and a semiconductor layer (104, 204) of a first conductivity type disposed on the substrate and including a drift region (120, 220); a shield region (110a, 110b, 210a, 210b) of a second conductivity type disposed in the semiconductor layer adjacent to the drift region; a first Schottky material (132a, 132b, 236a, 236b) disposed on a portion of the shield region and a first portion of the drift region, and defining a first Schottky contact (142a, 142b, 246a, 246b) with the drift region; and a second Schottky material (130, 232a, 232b) disposed on a second portion of the drift region adjacent to the first Schottky material, and defining a second Schottky contact (240, 242a, 242b) with the drift region. A barrier height of the first Schottky contact is less than a barrier height of the second Schottky contact.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
89.
CONCEALED GATE TERMINAL SEMICONDUCTOR PACKAGES AND RELATED METHODS
Semiconductor packages may include a lead frame, one or more semiconductor die coupled with the lead frame, and an interposer coupled with the lead frame and with at least one of the one or more semiconductor die. The interposer in implementations includes an electrically conductive material coupled with an electrically insulative material. The interposer may be coupled with the lead frame through the electrically insulative material such that the electrically conductive material is electrically isolated from the lead frame. The interposer may facilitate a gate node of the package being fully encapsulated within the package without being exposed through an encapsulant of the package. Fully encapsulating the gate node within the package may allow a contact pad of another node to have a larger area exposed through the encapsulant to provide greater heat transfer to a printed circuit board (PCB).
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
90.
IMAGE SENSOR PACKAGING STRUCTURES AND RELATED METHODS
An image sensor package may include an image sensor die including a bond pad and an optically transmissive lid coupled over the bond pad at an adhesive dam, the adhesive dam including a first layer directly coupled to a largest planar surface of the optically transmissive lid and a second optically opaque layer coupled over the bond pad.
In some aspects, a diode can include: a substrate and semiconductor layer of a first conductivity type, the semiconductor layer being disposed on the substrate and including a drift region; a shield region of a second conductivity type disposed in the semiconductor layer adjacent to the drift region; a first Schottky material disposed on at least a portion of the shield region and on a first portion of the drift region, the first Schottky material defining a first Schottky contact with an upper portion of the drift region; and a second Schottky material disposed on a second portion of the drift region, the second Schottky material being adjacent to the first Schottky material, the second Schottky material defining a second Schottky contact with the upper portion of the drift region, the first Schottky contact having a barrier height that is less than a barrier height of the second Schottky contact.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
Diode drivers, LIDAR systems, and methods for driving arrays of diodes. The diode driver includes a plurality of driver terminals, a plurality of row switches, a high-side switch, a low-side switch, a shorting switch, and a controller. Each of the plurality of row switches is coupled to an inductor and one of the plurality of driver terminals. The controller is configured to close the high-side switch, close the shorting switch, and open the low-side switch to increase an inductor current through the inductor. The controller is also configured to close a first row switch of the plurality of row switches. The controller is further configured to open the high-side switch, close the low-side switch, and open the shorting switch to drive the inductor current to a first driver terminal of the plurality of driver terminals. The controller is also configured to close the shorting switch to recirculate the inductor current.
H05B 41/282 - Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices
93.
SCATTERING STRUCTURES FOR SINGLE-PHOTON AVALANCHE DIODES
An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. The light scattering structures may have different sizes and/or a layout with a non-uniform number of structures per unit area. SPAD devices may also include isolation structures in a ring around the SPADs to prevent crosstalk. The isolation structures may include metal-filled deep trench isolation structures. The metal filler may include tungsten.
H01L 31/055 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/0232 - Optical elements or arrangements associated with the device
G02B 3/06 - Simple or compound lenses with non-spherical faces with cylindrical or toric faces
Driver circuits, systems for driving actuators, and imaging systems with actuators. The driver circuit includes a current comparator circuit, a driver, and a replica circuit. The current comparator circuit includes a first node having a first voltage. The current comparator circuit also includes a second node having a second voltage. The driver includes a first terminal responsive to the second voltage. The driver also includes a second terminal connected to a reference voltage. The replica circuit includes a third terminal connected to the first node. The replica circuit also includes a fourth terminal connected to the second terminal of the driver. The replica circuit also includes a fifth terminal connected to the first terminal of the driver.
G05F 3/24 - Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode-transistor combinations wherein the transistors are of the field-effect type only
An imaging device may include an image sensor that generates frames of image data in response to incident light with an array of image pixels, and processing circuitry that processes the image data. The processing circuitry may include a transformation circuit that applies transforms to subsampled frames of image data that are generated using a subset of the image pixels to produce transform values, and a comparator circuit that compares the transform values. The processing circuitry may determine that motion has occurred between sequential frames if a difference between a first transform value corresponding to a first image frame and a second transform value corresponding to a second image frame exceeds a threshold value. In response to determining that motion has occurred, the image sensor may generate full-frame image data using all of the pixels of the array of image pixels.
Implementations of an image sensor package may include an image sensor die including at least one bond pad thereon; a bond wire wirebonded to the at least one bond pad; and an optically transmissive lid coupled to the image sensor die with an optically opaque film adhesive over the at least one bond pad. The bond wire may extend through the optically opaque film adhesive to the at least one bond pad.
A segmented optoelectronic semiconductor package may help to alleviate stresses resulting from bending that can cause a mechanical defect (e.g., crack) in a detector circuit. The bending can result from thermal growth/shrinkage of parts used in the optical electronic package and may be more pronounced for high aspect ratio detector circuits. The segmentation of the disclosed semiconductor package can create seams that allow the parts to flex without breaking. As a result, the disclosed semiconductor package may facilitate high aspect ratio optical detection over a wide temperature range.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
A power semiconductor device includes a substrate having a body region and a drift layer; a trench formed in the substrate; a gate dielectric structure including a first gate insulation layer having a first dielectric constant and a second gate insulation layer having a second dielectric constant different from the first dielectric constant; and a conductive material provided within the trench over the gate dielectric structure.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
Implementations of semiconductor packages may include: a semiconductor die having a first side and a second side. A first side of an optically transmissive lid may be coupled to the second side of the semiconductor die through one or more dams. The packages may also include a light block material around the semiconductor package extending from the first side of the semiconductor die to a second side of the optically transmissive lid. The package may include an opening in the light block material on the second side of the optically transmissive lid that substantially corresponds with an active area of the semiconductor die.
Implementations of semiconductor packages may include: a semiconductor die having a first side and a second side. A first side of an optically transmissive lid may be coupled to the second side of the semiconductor die through one or more dams. The packages may also include a light block material around the semiconductor package extending from the first side of the semiconductor die to a second side of the optically transmissive lid. The package may include an opening in the light block material on the second side of the optically transmissive lid that substantially corresponds with an active area of the semiconductor die.
